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Here, we describe a fully in situ method of fabricating light-scattering structures on III-V materials that generates a rough morphology via vapor phase etching and redeposition. Fully in situ methods support higher industrial throughput by utilizing the growth reactor to generate the light-trapping structures after device growth without removal from the reactor. We use HCl and PH3 to etch and redeposit scattering morphologies on Ga0.5In0.5P in a dynamic hydride vapor phase epitaxy (D-HVPE) reactor. We show that the addition of PH3 leads to redeposition during the vapor phase HCl etching of Ga0.5In0.5P and that HCl flow rate and time exposed to HCl-PH3 each independently cause a linear increase in the redeposited feature size, indicating that redeposition proceeds by island growth in a III-Cl-limited, hydride-enhanced HVPE regime. Auger electron spectroscopy and scanning transmission electron microscopy with energy dispersive spectroscopy (STEM-EDS) reveal redeposition to be highly Ga-rich GaInP, i.e., Ga(In)P. The Ga-rich nature of the redeposition results from the higher thermodynamic driving force for Ga incorporation than for In during HVPE growth and the difference in the volatility of the III-Cl etch products. The resulting morphologies have high broadband scattering, as determined by normal specular reflectance and integrating sphere measurements, indicating effectiveness as light-scattering structures. In a 270-nm-thick GaAs photovoltaic device with a textured back surface, we achieve a 4.9% increase in short circuit current density (JSC) without any loss in open-circuit voltage (VOC) relative to a planar control using only a 60 s in situ texturing treatment. [ABSTRACT FROM AUTHOR]

Short-lived core-ionized neon atoms were investigated by measuring under resonant Raman conditions the Auger decay following the excitation of a second core electron into a Rydberg state. Making use of intense and narrow bandwidth x-ray free-electron laser pulses, the photoexcitation spectrum of the femtosecond-lived Ne + 1 s 0 2 s 2 2 p 6 n p series was characterized. Energy position and lifetimes of the lower-lying Rydberg states were determined and the final state configurations following the decay of the Ne + 1 s 0 2 s 2 2 p 6 3 p double-core hole resonance were partially resolved. [ABSTRACT FROM AUTHOR]

Layered transition metal dichalcogenide (TMD) materials have attracted great interest for applications in electronics. Here, we report a method to synthesize TMD materials at controlled locations with the desired layer number. Metal oxide precursors are patterned on the growth substrate by photolithography, and then a mixture of sodium chloride and sodium cholate growth promoters is applied to enable the growth of monolayer and bilayer TMDs with large flake sizes. The quality of the bilayer flakes is examined by atomic force microscopy, Auger electron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and transmission electron microscopy. Electrical performance is evaluated by fabricating three-terminal field-effect transistors that demonstrate high carrier mobilities and on/off ratios larger than 105. This approach provides insights into future device applications and integration strategies based on layered TMD materials. [ABSTRACT FROM AUTHOR]

In this work, SnO2 thin films are deposited by drop–dry deposition (DDD), which is a simple, low-cost chemical technique for thin film deposition. The deposition solution contains Na2SnO3 as the Sn source, and is highly stable without spontaneous reactions in the solution. The solution is dropped on a substrate heated to 60°C on a heater plate. According to Auger electron spectroscopy, the deposit will be stoichiometric SnO2. The film is n-type and transparent in the visible range. The pn heterostructure is fabricated by depositing SnO2 on p-type NiO. The NiO film is also fabricated by DDD. Ni(OH)2 is deposited using a solution containing Ni(NO3)2 and NaOH, and then is converted to NiO by annealing at 400°C. The SnO2/NiO structure is transparent in the visible range and shows clear rectification properties and photovoltaic effects. Thus, a transparent solar cell is successfully fabricated by DDD. [ABSTRACT FROM AUTHOR]

InGaN, a group‐III nitride semiconductor, is expected to be widely used in the field of optoelectronics, owing to its excellent physical properties. However, InGaN has various limitations. This study reports face‐to‐face annealing (FFA) using vapor‐phase and in‐plane mass transport to improve the surface flatness of an InGaN template. InGaN layers are grown on a GaN template that is grown on a c‐plane sapphire substrate using metal–organic vapor‐phase epitaxy. NH3‐assisted FFA is performed at 1050 °C for 20 min, causing V‐pits to vanish from the InGaN template despite their initial density of 3.3 × 108 cm−2. The surface condition of the lower InGaN layer is worse than that of the upper InGaN layer due to the FFA‐induced upward mass transport from the lower layer, thereby eliminating the V‐pits. Compositional analysis of the upper layer through Auger electron spectroscopy and energy‐dispersive X‐ray spectroscopy reveals In peaks despite high‐temperature annealing, thus confirming the presence of InGaN. The results of this study offer possibilities for future InGaN crystal growth and InGaN‐based device fabrication. [ABSTRACT FROM AUTHOR]

The work performed studies of Al–Ti–Si and Al–Ti–TiOx–Si structures with an n-TiOx/p–Si heterojunction. The TiOx layer was formed using the atomic layer deposition method; its thickness was 5 nm. To study the layers and composition of the structures, methods of electron microscopy, Auger spectroscopy, and Raman scattering were used. Much attention is paid to the study of electrical characteristics. It was found that the Al–Ti–Si structure is a Schottky diode, there is no minority carrier current in it, and the current–voltage characteristics are described by classical models. In the Al–Ti–TiOx–Si heterostructure, titanium oxide has n-type conductivity and is an injector of electrons into p-Si, which leads to the appearance of recombination currents in the space charge region, which lies entirely in silicon. When reverse biased, the titanium oxide layer acts as a conductor of electrons and contributes to the development of tunnel generation currents. [ABSTRACT FROM AUTHOR]

4-probe measurements of surface resistivity, measurements of dark and light current-voltage characteristics, the possibilities of using a thin PdSi film to obtain perfect nano-sized ohmic contacts on the Si(111) surface have been investigated using Auger electron spectroscopy methods in combination with ion etching of the surface. It has been shown that the depth of Ni diffusion in the Ni-Si (111) system is 400 - 500 Å at indoor temperature, and 70 – 80 Å in the Ni-PdSi-Si (111) system. The quality of the ohmic contact in the latter case does not change up to T = 800 K and withstands luminous flux illumination up to F = 1100 lux. It is shown that the resistivity of the PdSi film passes through a minimum at T = 900 – 1000 K. An analysis of the results obtained will be given in the article. [ABSTRACT FROM AUTHOR]

High-density nonvolatile memories can be realized by fabricating resistive random-access memories (RRAMs) as 4F2 (F: minimum feature size) cells in a crossbar array (CBA) configuration. However, the CBA configuration induces leakage currents in the nearby cells, which significantly reduces the read-out margin and limits the CBA size extension. One solution to this problem is to integrate an RRAM with a bidirectional selector. Research on the various type of selector devices has been extensively explored so far, however, a device that satisfies all requirements has not been developed. In this paper, we propose a novel bidirectional diode selector with a Pt/HfNx/Pt stack. We implement a one-selector–one-resistor configuration in a 10 × 10 CBA by integrating Pt/HfNx/Pt with a Ti/HfO2/Pt RRAM stack. We confirm the stable resistive switching operation and good thermal stability of the selector and its integrated device. Chemical analyses aided by Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal the gradient-oxidation of the HfNx film, which explains the nonlinear and asymmetric current–voltage characteristics. This novel nonlinear selector with simple structure and high thermal stability can be applied to build CBAs for high-density nonvolatile memories or neuromorphic computing elements, in the future. [ABSTRACT FROM AUTHOR]

Personalized laser powder bed fusion (PBF-LB/M) Ti-6Al-4V (TC4) has a broader application prospect than that of traditional casting. In this paper, the composition and corrosion resistance of the passive film formation mechanism of TC4 prepared by optimization of PBF-LB/M techniques and traditional casting were systematically studied in 0.9 wt.% NaCl at 37 °C by electrochemical technique and surface analysis. The rates of the passive film formation process, corrosion resistance and composition of TC4 show different characteristics for the different preparation processes. Although the rate of passive film formation of cast-TC4 was higher at the initial immersion, the open circuit potential was more positive, and the film thickness was larger after stabilization, those facts show no positive correlation with corrosion resistance. On the contrary, with no obvious defects on the optimized PBF-LB/M-TC4, the passive film resistance is 2.5 times more, the defect concentration is reduced by 30%, and the TiO2 content is higher than that of the cast-TC4, making the martensitic-based PBF-LB/M-TC4 exhibit excellent corrosion resistance. This also provides good technical support for the further clinical application of PBF-LB/M-TC4. [ABSTRACT FROM AUTHOR]

In the present work, the evolution of the microstructure in additively manufactured 17-4PH stainless steel, which was subjected to laser surface alloying with amorphous boron and nitrogen at the varying process parameters, was studied. The main aim was to improve surface hardness and hence potential wear resistance of the steel. Scanning electron microscopy, wavelength-dispersive X-ray spectroscopy (WDS), and Auger electron spectroscopy (AES) were used. It was shown that the final microstructure developed in the laser-melted zone (LMZ) is dependent on a variety of processing parameters (1 and 1.5 mm laser beam spot diameters; 200, 400, and 600 mm/min laser scan speeds), which primarily influence the morphology and orientation of the eutectic dendrites in the LMZ. It was metallographically proven that a fully eutectic microstructure, except for one sample containing 60 ± 4.2% of the eutectic, was revealed in the LMZ in the studied samples. The results of WDS and AES also confirmed alloying the LMZ with nitrogen. The formation of the boron eutectic and the supersaturation of the α-iron solid solution with boron and nitrogen (as a part of the eutectic mixture) led to enhanced microhardness, which was significantly higher compared with that of the heat-treated substrate (545.8 ± 12.59–804.7 ± 19.4 vs. 276.8 ± 10.1–312.7 ± 11.7 HV0.1). [ABSTRACT FROM AUTHOR]

Ti‐based bulk metallic glasses are envisioned for human implant applications. Yet, while their elevated Cu content is essential for a high glass‐forming ability, it poses biocompatibility issues, necessitating a reduction in near‐surface regions. To address this, surface treatments that simultaneously generate protective and bioactive states, based on nanostructured Ti and Zr‐oxide layers are proposed. An electrochemical pseudo‐dealloying process using the bulk glass‐forming Ti47Cu38Fe2.5Zr7.5Sn2Si1Ag2 alloy is defined. Melt‐spun ribbons are immersed in hot concentrated nitric acid solution, monitoring the anodic polarization behavior. From the current density transient measurements, together with surface studies (field‐emission scanning electron microscopy, transmission electron microscopy, and Auger electron spectroscopy), the surface reactions are described. This nanostructuring process is divided into three stages: passivation, Cu dissolution, and slow oxide growth, leading to homogenous nanoporous and ligament structures. By tuning the applied potential, the pore and ligament sizes, and thickness values are adjusted. According to X‐ray photoelectron spectroscopy, these nanoporous structures are Ti and Zr‐oxides rich in hydrous and nonhydrous states. In a simulated physiological solution, for those treated glassy alloy samples, complete suppression of chloride‐induced pitting corrosion in the anodic regime of water stability is achieved. This high corrosion resistance is similar to that of clinically used cp‐Ti. [ABSTRACT FROM AUTHOR]

We present an ab initio computational study of the Auger electron spectrum of benzene. Auger electron spectroscopy exploits the Auger–Meitner effect, and although it is established as an analytic technique, the theoretical modeling of molecular Auger spectra from first principles remains challenging. Here, we use coupled-cluster theory and equation-of-motion coupled-cluster theory combined with two approaches to describe the decaying nature of core-ionized states: (i) Feshbach–Fano resonance theory and (ii) the method of complex basis functions. The spectra computed with these two approaches are in excellent agreement with each other and also agree well with experimental Auger spectra of benzene. The Auger spectrum of benzene features two well-resolved peaks at Auger electron energies above 260 eV, which correspond to final states with two electrons removed from the 1e1g and 3e2g highest occupied molecular orbitals. At lower Auger electron energies, the spectrum is less well resolved, and the peaks comprise multiple final states of the benzene dication. In line with theoretical considerations, singlet decay channels contribute more to the total Auger intensity than the corresponding triplet decay channels. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) allotropes of tellurium (Te), recently coined as tellurene, are currently an emerging topic of materials research due to the theoretically predicted exotic properties of Te in its ultrathin form and at the single atomic layer limit. However, a prerequisite for the production of such new and single elemental 2D materials is the development of simple and robust fabrication methods. In the present work, we report three different 2D superstructures of Te on Au(111) surfaces by following an alternative experimental deposition approach. We have investigated the superstructures using low-temperature scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy (AES), and field emission AES. Three superstructures (13 × 13, 8 × 4, and √11 × √11) of 2D Te are observed in our experiments, and the formation of these superstructures is accompanied by the lifting of the characteristic 23 × √3 surface reconstruction of the Au(111) surface. Scanning tunneling spectroscopy reveals a strong dependence of the local electronic properties on the structural arrangement of the Te atoms on the Au(111) support, and we observe superstructure-dependent electronic resonances around the Fermi level and below the Au(111) conduction band. In addition to the appearance of the new electronic resonances, the emergence of band gaps with a p-type charge character has been evidenced for two out of three Te superstructures (13 × 13 and √11 × √11) on the Au(111) support. [ABSTRACT FROM AUTHOR]

To address the spin pumping in the conventional ferromagnetic/"normal" metal systems, we fabricated 6 nm Fe/1–15 nm Rh epitaxial bilayers and determined the g-factor, magnetic anisotropy, and magnetization damping by combining both 0–40 GHz CPW-based frequency-dependent and cavity-based 9.56 GHz in-plane angular-dependent ferromagnetic resonance measurements at room temperature. Auger electron spectroscopy and low-energy electron diffraction show that Rh grows epitaxially on Fe. The epitaxial bilayers exhibit a high spin mixing conductance g mix ↑ ↓ = (2.9 ± 0.2) × 10 19 m−2 and a spin diffusion length in Rhodium λ s d = 9.0 ± 1.3 nm. This makes Rh comparable to Pt and Pd in terms of spin pumping and spin transport efficiency at room temperature. [ABSTRACT FROM AUTHOR]

Purpose: The purpose of variable loading conditions (392 N-785N-392N-785N) with break-in period were used to study interactions between zinc dialkyl dithiophosphate (ZDDP) 0.1 P% (phosphorus) and fine-grade molybdenum disulfide (MoS2) 3%, in different mixtures of NLGI 2 lithium stearate grease. Four-ball wear tests were used to evaluate the tribological properties of different grease mixtures such as coefficient of friction and wear. ASTM 2266 as reported by earlier studies is useful, but it is not representative of real-life applications where variable loads and speeds and different break-in periods play a role and could change the results and the nature of tribofilms. Design/methodology/approach: In this study, chemical and mechanical properties of tribofilms were examined. Moreover, design of experiment was used to examine the data and shorten experimentation time. Research described here is investigating variable loading conditions for real-life applications by using a break-in period of 2 min at the start to minimize asperities and establish a clean surface. Design expert (DOE) analyzes responses to reveal those variables that are single factor and those that are multifactor whether synergistically or antagonistically. Findings: The results indicated that spectrum loading with break-in period showed reduction in wear when tested in greases with ZDDP/MoS2 combinations. Ramping up or down the load every 7.5 min for a rotational speed of 1,200 rpm and a total of 36,000 revolutions or 30-min time slowed the wear properties of lithium-based grease under different MoS2 and ZDDP concentrations. Experiments indicated that wear was largely dependent on the loading condition and ZDDP additives during specific break-in period at 1,200 rotational speed. It is believed that MoS2 greases perform better under spectrum loading and under constant loading when mixed with ZDDP phosphorus. Originality/value: This research indicates that there is a synergistic interaction between ZDDP, MoS2 and variable loading especially when a break-in period is applied. The results indicated that wear was largely dependent on the specific speed used with spectrum loading as presented in the energy dispersive spectroscopy and the Auger electron spectroscopy analysis, and thus a 3% MoS2 grease with ZDDP (phosphorus: 0.1 Wt.%) are needed to improve the wear resistance and improve the friction characteristics. Peer review: The peer review history for this article is available at: https://publons.com/publon/10.1108/ILT-01-2024-0016/ [ABSTRACT FROM AUTHOR]

The paper breaks the general concepts and shows that pore formation is possible in anodic aluminum barrier oxide by anodizing of pure Al, and also presents the results of electrochemical anodizing in boric acid and citrate buffer aqueous solutions of homogeneous binary alloys AlCu (4 wt.%), AlZn (3 wt.%) and AlAg (5.2 wt.% and 16.2 wt.%). Barrier anodizing allowed obtaining Al2O3 thin films doped with copper, zinc and silver. The anodizing behavior and the effect of anodic current density on the charge were studied, and scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses were performed. The doped alumina thin films, which are a mixture of Al2O3, Cu2O, ZnO, Ag2O, AgO and promising double metal oxides CuAlO2, AgAlO2 and ZnAl2O4, are promising for use as resistive switching, photoelectron, mechanical, photo-thermoelectric and fluorescence materials; sensors; and transparent conductive and photocatalyst films. [ABSTRACT FROM AUTHOR]

Eu3+ ion doped CaF2 thin film was successfully prepared using the hydrothermal method and coated by a spin coating technique. A thin layer of ZnO was deposited on the Eu3+ doped CaF2 thin film by pulsed laser technique. Incorporation of the dopant into the CaF2 crystal was confirmed by x-ray powder diffraction and x-ray photoelectron spectroscopy (XPS). Excitation of the film at 227 nm produced the characteristic emissions of Eu3+ ions. The stability of the film under electron beam bombard was studied using Auger electron spectroscopy, cathodoluminescence (CL), and XPS. The CL and Auger peak-to-peak heights (APPHs) data were collected concurrently using the same electron beam. The APPH of Ca and O increased, while that of F decreased, which indicated the conversion of CaF2 to CaO. The CL emission decreased initially during degradation and stabilized beyond 48 C/cm2 for the film with the ZnO coating. XPS analysis also indicated the dissociation of the fluoride compounds and subsequent formation of oxide compounds such as CaO and EuO after electron beam degradation. [ABSTRACT FROM AUTHOR]

The growth, morphology, and structure of MnxAu1−x$\left(\text{Mn}\right)_{x} \left(\text{Au}\right)_{1 - x}$ films on Cu(001) and Ag(001) are studied by means of low‐energy electron diffraction (LEED), medium‐energy electron diffraction, Auger electron spectroscopy, and scanning tunnelling microscopy. Different concentrations x from about 0.5 to 1 and thicknesses from 0.2 to 12.9 ML of MnxAu1−x$\left(\text{Mn}\right)_{x} \left(\text{Au}\right)_{1 - x}$ are examined. For several values of x, MnxAu1−x$\left(\text{Mn}\right)_{x} \left(\text{Au}\right)_{1 - x}$ exhibits a c(2 ×$\times$ 2) superstructure pattern on Cu(001) when the total thickness is around or above 0.5 ML. Above 1 ML, LEED patterns of MnxAu1−x$\left(\text{Mn}\right)_{x} \left(\text{Au}\right)_{1 - x}$ can be only observed on Ag(001), but not on Cu(001). LEED‐I(V) is employed to deduce the vertical interlayer distance for as‐grown and post‐annealed films on Ag(001). Above 500 K, Ag from the substrate segregates into the films. [ABSTRACT FROM AUTHOR]

The paper reports the results of study of composition, emission, and optical properties of polycrystalline W and Mo samples implanted with Ba+ ions and coated with submonolayer Ba atoms by applying Auger electron spectroscopy, secondary electron emission coefficient σ technique, as well as the photoelectron quantum yield Y. The experimental part was carried out by using the instrumentation and under vacuum Р ≈ 10-6 Pa. It is shown that during the implantation of Ba ions in the surface layers of refractory metals, a mechanical mixture of the W + Ba and Mo-Ba types is formed. It has been established that the values of the coefficient of secondary electron emission σ and the quantum yield of photoelectrons Y at the same value of the work function еφ in the case of implantation of Ba+ ions are much larger than in the case of deposition of atoms. The obtained experimental results are substantiated by theoretical calculations. [ABSTRACT FROM AUTHOR]

The results of studying SiO2 films implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide are studied using Rutherford backscattering and time-of-flight secondary-ion mass spectrometry. The chemical state of zinc and the phase composition of the film are determined by Auger electron spectroscopy and Raman scattering. It is found that after implantation, the zinc distribution has two maxima at depths of 20 and 85 nm, and after annealing at 700°C there is a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases is formed in the sample. After annealing at 700°C, only the ZnO phase is formed in the sample, the distribution profile of which has a broadened peak at 45 nm. [ABSTRACT FROM AUTHOR]

The effect of Mn on interfacial Sn segregation during the selective oxidation of Fe-(0–10)Mn-0.03Sn (at.%) alloys was determined for annealing conditions compatible with continuous galvanizing. Significant Sn enrichment was observed at the substrate free surface and metal/oxide interface for all annealing conditions and Mn levels. Sn enrichment at the free surface was insensitive to the Mn alloy concentration, which was partially attributed to the opposing effects of Mn on segregation thermodynamics and kinetics: Mn increases the driving force for Sn segregation via reducing Sn solubility in Fe but also reduces the effective Sn diffusivity by increasing the austenite volume fraction. This insensitivity was exacerbated by the depletion of solute Mn near the surface due to the selective oxidation of Mn. Thus, Sn segregation occurred in regions with a local Mn concentration lower than the nominal bulk composition of the alloys suggested. Sn enrichment at the metal/external oxide interface was reduced compared to the free surface and decreased with increasing bulk Mn content, which was attributed to changes in the external oxide morphology and metal/internal oxide interfaces acting as Sn sinks. [ABSTRACT FROM AUTHOR]

Understanding the physical–chemical processes ruling the interaction of particles (atoms, molecules, and ions) with surfaces is fundamental in several research fields, such as heterogeneous catalysis, astrochemistry, and nuclear fusion. In particular, the interaction of hydrogen isotopes with plasma facing materials represents a high-priority research task in the fusion community. Such studies are essential to ensure the successful operation of experimental fusion reactors, such as the tokamak ITER. In this work, we present a surface science apparatus developed to study ion-surface interaction in fusion relevant systems. It combines laser-based techniques with contaminant-free ion/molecular beams, mass spectrometry, and surface science tools such as low-energy electron diffraction and Auger electron spectroscopy. It allows to cover a wide range of sample temperatures, from 130 to 2300 K, by changing the heating rate of samples from 0.1 to 135 K/s and maintaining the linearity of the heating ramps, a powerful feature to gain insight on adsorption, absorption, and desorption mechanisms. Experimental calibration and performance are presented in detail. Moreover, to provide a factual overview of the experimental capabilities, we focus on two different applications: the protocol used to clean a W(110) single crystal sample and the development of laser temperature programmed desorption to study helium retention in tungsten. [ABSTRACT FROM AUTHOR]

This study investigated the application of colored coatings on synthetic moissanite, a process aimed at simulating the appearance of rare blue and pink diamonds. The analysis focused on characterizing colored coatings on commercial synthetic moissanite and uncovering the possible techniques used. By employing a range of nanoscale analytical methods (including Auger electron spectroscopy combined with argon ion beam sputtering, spherical aberration-corrected transmission electron microscopy with electron energy loss spectroscopy, and electron probe microanalysis), the compositions and thicknesses of the coatings were determined, revealing their nanoscale thin-film properties. These films varied in composition, leading to the distinct blue and pink hues observed for the synthetic moissanite samples. The suite of analytical techniques presented in this study offers a robust basis for characterizing colored coatings on a variety of polished gemstones, providing compelling evidence of the fabrication principles and mechanisms behind these coatings. [ABSTRACT FROM AUTHOR]

We attempted to grow a thin film of BiN by co-deposition of bismuth and nitrogen on rock-salt structure MgO (001) substrates. Furthermore, we studied the effect of variation of the growth temperature and the nitrogen to bismuth flux ratios on sample growth. For the samples grown and conditions used, we do not find strong evidence for the formation of a bulk Bi-N alloy. Even for very high nitrogen to bismuth flux ratio, we observed only bismuth and no nitrogen using bulk Rutherford back-scattering spectroscopy measurements, and only 1%–2% nitrogen was seen through surface Auger electron spectroscopy measurements. The in-plane lattice measurements show that the resulting Bi (110) samples are strained, which is presumably caused by lattice mismatch between the sample and the substrate when grown without any buffer layer. The use of a high-temperature buffer layer helps to release strain in the sample but only along one axis. Measurements of the atomic layer spacing using x-ray diffraction and also scanning tunneling microscopy confirm the Bi (110) thin film sample structure. [ABSTRACT FROM AUTHOR]

Currently, high-energy resolution Auger electron spectroscopy (AES) is utilized for chemical-state qualitative analysis, such as x-ray photoelectron spectroscopy. It is highly desirable to perform quantitative analysis using the high-energy resolution direct spectra used for qualitative analysis. However, AES analysis parameters, such as relative sensitivity factors (RSFs), derived from conventional-energy resolution differentiated spectra cannot be adopted for high-energy resolution direct spectra. Furthermore, for quantification by high-energy resolution direct spectra, there is no established method for determining peak intensity, and no database of RSFs is available in surface analysis communities. Therefore, we tasked ourselves with investigating the use of the analysis parameters obtained from conventional-energy resolution-differentiated spectra obtained with a cylindrical mirror analyzer (CMA)-type AES instrument for high-energy resolution direct spectra measured with a spherical capacitor analyzer (SCA)-type AES instrument. The convolution technique proposed here is achieved by using a conventional-energy resolution spectral dataset obtained with CMA-AES as a target. By applying the convolution with the window function of the convoluted function of the Gaussian function and rectangular function, high-energy resolution direct spectra containing the inherent nature of fine structures are converted to the similar shapes of conventional-energy resolution direct spectra after the Shirley type background subtraction [Watanabe et al., J. Vac. Sci. Technol. A 41, 043209 (2023)]. Results revealed that for all spectra of conventional-energy resolution spectra taken with CMA-AES, as well as high-energy resolution spectra taken with SCA-AES with various energy resolutions, the ratios of the background-subtracted direct peak areas and the differentiated peak-to-peak intensities were well-aligned along the identical parabolic curve as a function of the kinetic energy (KE). Experimental results also revealed that the generalized conversion function f (K E ; Δ E) = I a r e a c m a I a r e a c o n v. s c a (K E ; Δ E) , which is the ratio of the conventional-energy resolution spectral area (I a r e a c m a ) and the convoluted high-energy resolution spectral area (I a r e a c o n v. s c a ), which can transform differentiated intensities of convoluted high-energy resolution spectra, such that they are similar to those of conventional-energy resolution spectra obtained using the CMA-AES instrument, being a function of KE and the energy resolution Δ E. By applying the conversion function, the historically accumulated AES analysis parameters for conventional-energy resolution differentiated spectra can be adopted to differentiated high-energy resolution spectra. Finally, the results revealed the sufficiency of the conversion function obtained by the actual measurements of the four reference specimens for the practical quantification of high-energy resolution AES direct spectra. [ABSTRACT FROM AUTHOR]

The construction of a low power silicon evaporation source for thin film deposition applications is proposed in this article. A few differently shaped tungsten filaments were mounted inside a quartz glass crucible, which assured an effective heating of silicon wafer pieces. The sublimation process was monitored at filament powers in the range of 8–22 W, which corresponds to temperatures far below the melting point of Si. The operation of the evaporation source requires only the use of a low voltage power supply. All considered models of evaporation sources are characterized by an easy construction. The measurements carried out with the use of a quartz crystal microbalance sensor enabled to determine the deposition rate at different filament powers for all constructed Si sources and confirm the long-term stability of the silicon flux. The experimental data exhibit the Polany–Wigner dependence of the deposition rate as a function of inverse of power at higher filament powers. Auger electron spectroscopy was used to monitor the deposition of Si on Ag(100) under constant silicon flux. The Auger signal recorded from Si and Ag reflects the growth of subsequent silicon layers. This enabled the determination of the Frank–van der Merwe growth mode of Si on Ag(100) at early stages of growth, the formation time of one Si monolayer, and, thus, the deposition rate. The presented designs of the Si source exhibit long time stable evaporation fully controlled by the applied filament power, which is crucial in the precise adsorption of ultrathin Si layers. [ABSTRACT FROM AUTHOR]

The structural characteristics, chemical composition, and element spatial distribution in MgxZn1-xO ceramics were investigated using X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, energy-dispersive X-ray spectroscopy, and cathodoluminescence techniques. The study revealed that the morphology of the ceramic samples, as well as the mechanism of solid solution formation, depend on the relative contribution of both oxides in the charge. It was discovered that hexagonal and cubic phases of the solid solution were found to form simultaneously. An increase in the MgO content in the charge results in the magnesium content rise in the hexagonal grains continuously, reaching approximately 13 at.%. It was discovered an enrichment of grain boundaries with zinc and magnesium playing a significant role in doping ZnO and MgO grains. Obtained results allowed to propose two mechanisms involved in the formation of solid solution ceramics: i) diffusion of Mg and Zn along grain boundaries, followed by their incorporation into ZnO or MgO grains, respectively, and ii) interdiffusion of Mg into ZnO and Zn into MgO due to direct contact of ZnO and MgO grains. The second mechanism appears to dominate when both ZnO and MgO contribute comparably, increasing the probability of their direct contact. This study significantly advances the understanding of the process of the formation of MgxZn1-xO ceramics under thermodynamic conditions. These insights are crucial for optimizing the doping process and improving the material properties, thereby promoting innovations in the ceramics industry.

Engineering transition metal dichalcogenides-based semiconducting two-dimensional (2D) layered materials for photo(electro)chemical (PEC) hydrogen evolution reaction (HER) by water splitting is an enduring challenge. Here, alloy-assisted photoconductivity and photoresponse from CVD-grown MoS2(1-x)Se2x (MSSE) 2D ternary atomic layered alloy-based photodetector device is presented for the realization of PEC HER. The explicit role of ‘S–Se’ and ‘Se2’ atomic alloy sites including chalcogen-induced vacancy defects on the photoconductivity/photoresponse and PEC HER performance of MSSE 2D alloy is investigated. Alloy formation, atomic site-by-site ‘Se’ composition and atomic structure are characterized using Raman/Photoluminescence (PL) spectroscopy, high-angle annular dark field (HAADF)- scanning transmission electron microscopy (STEM) extensively and supported with Auger Electron Spectroscopy (AES) mapping. Further, the local density and concentration of S–Se, Se2 atomic sites and defects were quantitatively estimated using HAADF-STEM image analysis in correlation with AES and it is found between the range of ∼15–20 % in MSSE alloy. A 10-fold high photoresponsivity in the case of MSSE concerning as-grown MS having fast photocurrent growth time and the prolonged decay time originates from the ‘Se’ and this alloy assisted states to enhance the PEC performance of MSSE alloy. The enhanced PEC HER activity of MSSE alloy was identified in terms of overpotential and current density. In addition, increased density of states as a function of ‘Se’ alloying, shifts in a p-band centre and lowers ΔGH* according to density functional theory calculations, which makes MSSE alloy an efficient HER activity. Further, the PEC stability and presence of the ‘S–Se’ and ‘Se2’ alloying and their role towards HER have been correlated by the spectral line shape analysis of PL and Raman spectra from post-PEC HER catalysts. These experimental and theoretical findings establish the role of chalcogen, and transition metal-based 2D alloy, leading to the design of new PECs of engineered 2D atomic layer interfaces.

Multiphase stainless steel is a kind of stainless steel that obtains good mechanical properties. Nevertheless, the passive and pitting behaviors of multiphase stainless steel remain inadequately elucidated. This study aims to investigate the passive and pitting behaviors of multiphase stainless steel by employing Auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and electrochemical techniques. The conclusions drawn from this research are as follows: The main constituents of the passive film on multiphase stainless steel comprise FeO, Fe2O3, Cr2O3, and Cr(OH)2. The passive film on the martensitic phase displays largest thicknesses. The Cr content in the passive film of the ferritic phase is highest. Particularly, the passive film on the (111) orientation of martensitic phase is thicker than that on the (001) and (101) orientations. Pitting corrosion in multiphase stainless steel primarily initiates at phase interfaces and subsequently extends into the ferritic phase.

Room temperature adsorption of molecular iodine on Ag(111) has been studied by scanning tunneling microscopy (STM), low energy electron diffraction, Auger electron spectroscopy with factor analysis, and density functional theory (DFT). At the chemisorption stage, iodine first forms a ( 3 × 3 ) R30° structure. Further iodine dosing leads to continuous commensurate–incommensurate phase transition, taking place via the formation of striped superheavy domain walls. As a result, the uniaxially compressed (13 × 3 -R30°) phase is formed at an iodine coverage (θ) of 0.38 ML. At θ > 0.38 ML, first-order phase transition begins, leading to the formation of hexagonal moiré-like phases, which exhibit an anomalously large corrugation in STM (0.8–2.3 Å). In the range of 0.40–0.43 ML, the compression of hexagonal phases occurs, which ends at the formation of the (7 × 7)R21.8° structure at saturation. The DFT calculations allow us to explain the anomalous atomic corrugation of the hexagonal phases by the strong violation of the atomic structure of the substrate including up to ten layers of silver. Iodine dosing above 0.43 ML leads to the growth of 2D islands of silver iodide. The STM images of the silver iodide surface demonstrate a clear visible hexagonal superstructure with a periodicity of 25 Å superimposed with a quasi-hexagonal atomic modulation. DFT calculations of the atomic structure of AgI islands point to the formation of a sandwich-like double layer honeycomb structure similar to the case of I/Ag(100). [ABSTRACT FROM AUTHOR]

Polycrystalline NiO thin films with controlled oxygen vacancy concentration were deposited on Pt/Ta/SiO2/Si substrates using RF sputtering. Auger electron spectroscopy experiments confirmed that the NiO thin films exhibit approximately stoichiometric compositions of NiO, NiO0.95, and NiO0.94. These compositions were achieved using sputtering targets with controlled oxygen vacancy concentrations. The NiO resistive random access memory (RRAM) capacitors exhibited reduced formation voltage, SET voltage, and RESET voltage with increasing oxygen vacancy concentration. The decrease in forming, SET, and RESET voltages is attributed to the reduced Schottky barrier caused by oxygen vacancies at the Pt electrodes-NiO thin films interface. In particular, the increase in the oxygen vacancy concentration has the effect of reducing the voltage distributions of the forming, SET, and RESET voltages. Therefore, the results of this study are expected to be utilized in RRAM technology by understanding the values and distributions of formation voltages, SET voltages, and RESET voltages according to changes in oxygen deficiency concentration in the NiO RRAM capacitors. [ABSTRACT FROM AUTHOR]

Ti-based bulk metallic glasses are promising materials for metallic bone implants, mainly due to their mechanical biofunctionality. A major drawback is their limited corrosion resistance, with high sensitivity to pitting. Thus, effective surface treatments for these alloys must be developed. This work investigates the electrochemical treatment feasibility of nitric acid (HNO3) solution for two bulk glass-forming alloys. The surface states obtained at different anodic potentials are characterized with electron microscopy and Auger electron spectroscopy. The corrosion behavior of the treated glassy alloys is analyzed via comparison to non-treated states in phosphate-buffered saline solution (PBS) at 37 °C. For the glassy Ti47Zr7.5Cu38Fe2.5Sn2Si1Ag2 alloy, the pre-treatment causes pseudo-dealloying, with a transformation from naturally passivated surfaces to Ti- and Zr-oxide nanoporous layers and Cu-species removal from the near-surface regions. This results in effective suppression of chloride-induced pitting in PBS. The glassy Ti40Zr10Cu34Pd14Sn2 alloy shows lower free corrosion activity in HNO3 and PBS due to Pd stabilizing its strong passivity. However, this alloy undergoes pitting under anodic conditions. Surface pre-treatment results in Cu depletion but causes enrichment of Pd species and non-homogeneous surface oxidation. Therefore, for this glassy alloy, pitting cannot be completely inhibited in PBS. Concluding, anodic treatments in HNO3 are more suitable for Pd-free glassy Ti-based alloys. [ABSTRACT FROM AUTHOR]

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Grain boundary wetting as a preliminary stage for zinc-induced grain boundary weakening and embrittlement in a Zn-coated press-hardened 20MnB8 steel was analyzed using electron backscatter diffraction, Auger electron spectroscopy, energy dispersive X-ray analysis, atom probe tomography and transmission electron microscopy. Microcracks at prior austenite grain boundaries were observed. Structures that developed after microcrack formation were identified: for example, Zn/Fe intermetallic phases with grain sizes smaller than 100 nm were present at the crack surfaces and the wedge-shaped crack tips. An electrolytically coated reference sample that underwent the same heat treatment as the press-hardened material but without the application of tensile stress was investigated in order to find the initial cause of the microcracks. On this sample, Zn, in the order of one atomic layer, was found along prior austenite grain boundaries several micrometers away from the actual Zn/Fe phases in the coating. The resulting grain boundary weakening with the Zn wetting of prior austenitic grain boundaries during austenitization and/or hot forming is a necessary precondition for microcrack formation. [ABSTRACT FROM AUTHOR]

This work focuses on the morphological and optical evolution of Al2O3 thick films grown by atomic layer deposition on Si-SiO2 substrates. Blister formation has been the subject of extensive research in the literature; our work fills a crucial gap in the optical characterization of areas inside and outside blisters. Morphological studies were carried out by scanning electron microscopy; we found a reciprocal relationship between the density of the blisters and their diameter. The thickness and refractive index were studied by ellipsometry, revealing a systematic increase in the refractive index with increasing annealing temperature. In addition, we observed the hydrophobic behavior in all films using the water contact angle technique, which suggests that even with blisters, this material can be used in waterproof coatings. Using Auger spectroscopy, we confirmed that delamination occurs completely once the blisters are broken. In this work, we perform cathodoluminescence measurements outside and inside the ampoules. In the area outside the blisters, we observe emissions attributed to the F centers, and the change from the main peaks of 2.8 and 3.4 eV for the as-deposited film to the dominance of emissions centered at 3.4 and 3.7 eV is clearly observed. Furthermore, we observed a strong increase in the cathodoluminescence signal at higher annealing temperatures. On the other hand, we also observed the evolution of the blisters through the cathodoluminescence spectra; in that area, we observed the radical change in the spectrum once the blister is broken, giving rise to the SiO2 signals. We also observed this rupture through a new absorption band in the attenuated total reflectance IR spectra. [ABSTRACT FROM AUTHOR]

This paper examines the features of the metallization unit of a power transistor with a vertical channel. It consists of alternating layers based on depth and includes titanium, titanium nitride and tungsten. Thick-film aluminum wiring is placed on the surface of the silicon substrate. Based on Auger spectroscopy and analysis of transmission electron diffraction patterns, it was revealed that a titanium dislicide film in the C54 phase is formed using low-temperature heat treatment and subsequent high-temperature annealing. It is shown that the introduction of special cyclic plasma treatment after deposition of a layer of titanium nitride using the metal-organic chemical vapor deposition method (MOCVD) made it possible to reduce the resistance of the films and reduce the level of mechanical stress. It has been shown that the addition of rhenium, titanium and nitrogen in the range of 5–10 at % allows you to reduce the mechanical stress of the tungsten layer by 3–5 times. Depending on the method of deposition of tungsten (magnetron or chemical), we have proposed two design options for this unit. A method for forming aluminum wiring based on thick-film aluminum using a sacrificial layer of titanium nitride is proposed. The proposed solutions provide the opportunity to improve the electrical and mechanical properties of the metallization unit of MIS transistor structures with a vertical channel. [ABSTRACT FROM AUTHOR]

Auger electron spectroscopy was used to determine the phase composition of Cr2GeC MAX phase thin films. A distinctive feature of the formation of carbon-containing MAX phases is the shape of carbon Auger peaks, which is characteristic of metal carbides spectra. Features of the Auger spectra in the presence of secondary phases of chromium germanides are found. Their presence can manifest itself in an increase in the energy of the germanium peaks, which is caused by a chemical shift during the formation of the Cr–Ge bond. Moreover, we have detected the accumulation of electronic charge, which can be explained by the features of the surface morphology. [ABSTRACT FROM AUTHOR]

Be adsorption at T = 900–1100 K results in formation of a stable adsorption state; it drops the activation energy of atomic Be dissolution in the substrate bulk, and all newly deposited Be dissolves in the substrate. The absolute concentration of atomic Be in this state has been measured by Auger electron spectroscopy using specially designed ultra high vacuum getter Be source. The concentration is (1.0 ± 0.1) × 1015 sm–2 and corresponds to WBe stoichiometry relative to W surface concentration. The layer is destroyed at T > 1100 K, the atomic Be dissolves in the bulk with the activation energy ∼3.5 eV. [ABSTRACT FROM AUTHOR]

Cu–Ni/SiO2 catalysts were prepared by coprecipitation method and used in the dehydrogenation reaction of secondary butyl alcohol to methyl ethyl ketone (MEK). The crystal structure, reduction characteristics, element valence state and dispersibility of the catalysts were investigated using X-ray diffraction (XRD), hydrogen temperature-programmed reduction (H2-TPR), inductively coupled plasma optical emission spectrometry (ICP-OES), X-ray photoelectron spectroscopy (XPS), X-ray Auger electron spectroscopy (XAES) and high resolution transmission electron microscopy (HRTEM). The role of Ni component in the dehydrogenation reaction of secondary butyl alcohol was analyzed. The results showed that the conversion of secondary butyl alcohol increased to over 99% when using the Cu–Ni/SiO2 catalyst. The addition of nickel component to Cu/SiO2 inhibited the agglomeration of copper nanoparticles. The interaction between copper and nickel was strengthened due to the formation of the Cu–Ni compound. This resulted in change to the valence state and improved the dispersion of copper species on the catalyst surface. The Cu+/(Cu+ + Cu0) ratio increased with the addition of nickel component to Cu/SiO2, which may be responsible for the enhancement of the secondary butyl alcohol conversion. However, the addition of the nickel component increased the reduction temperature of the catalysts and deteriorated their reduction characteristics, which leads to insufficient reduction, resulting in a high content of Cu+ species remaining in the catalyst. Therefore, side reactions can occur, which are detrimental to the selectivity and yield of MEK. The selectivity to MEK can reach 98% with the Cu/SiO2 catalyst, whereas that for the Cu–Ni/SiO2 catalyst was 97%. [ABSTRACT FROM AUTHOR]

Auger electron spectroscopy and thermoresistive methods are used to study the physical processes leading to gas cooling of heated molybdenum filaments in a wide temperature range of 350–1300 K and pressures of 760–10–3 Torr, corresponding to the operating range of a Pirani-type vacuum sensor. Nitrogen was used as the gas. It is shown that nitrogen atoms chemisorbed on the surface do not contribute to gas cooling, which occurs only due to physisorbed N2 molecules. In the intermediate vacuum region of 10–3–1 Torr, the heater is cooled due to the equilibrium between the flux of incident and thermally desorbed molecules, which is well described by the Hertz–Knudsen formula and first-order desorption with an activation energy of ~0.55 eV On the contrary, at high pressures close to atmospheric, this cooling occurs due to the thermal desorption of gas molecules from an almost filled monolayer, which reduces its relative efficiency by many orders of magnitude. [ABSTRACT FROM AUTHOR]

Commercially available zinc sulfide (ZnS) ceramics, synthesized using chemical vapor deposition and subsequently hot isostatically pressed, are optically transparent as compared to other zinc sulfide chemical vapor deposited films and ceramics. The unique optical transparency along with the hardness and chemical resistance of ZnS makes it an important material for infrared transmission applications. X-ray photoelectron spectroscopy and x-ray induced Auger electron spectroscopy were performed on an optically transparent ZnS ceramic. This report includes charge corrected scans for the survey along with S 2s, S 2p, S LMM, Zn 2p, Zn 2s, Zn 3d, Zn 3p, Zn 3s, Zn LMM, O 1s, and C 1s surface photoelectron signals. The scans provide photoelectron spectroscopy investigation data to help with the identification of metal sulfide compounds. [ABSTRACT FROM AUTHOR]

The effect of ultrasonic treatment of the surface of membrane foil produced from a solid solution of the Pd–In–Ru system on hydrogen sorption by the foil and its hydrogen permeability has been studied using cyclic voltammetry, Auger electron spectroscopy, and atomic force microscopy. The results demonstrate that such treatment leads to an increase in hydrogen sorption by the surface layer of the foil, without changes in its hydrogen permeability. Ultrasonic treatment has been shown to influence neither the morphology, nor the composition, nor the structure of the foil. [ABSTRACT FROM AUTHOR]

Influence of adsorbed carbon monoxide molecules on the thermal properties of rare-earth metal ytterbium films of nanoscale thickness has been studied. The films are produced at room temperature by metal deposition on single-crystal silicon substrates with the Si(111) surface orientation or textured tungsten ribbons with the predominant (100) face. It is shown that the adsorbed molecules hinder evaporation of ytterbium. The strength of such hindering is dependent on the chemical nature of substrate material. It is established that the substrates affect the state of adsorbed molecules through the nanofilms. This in turn influences on the evaporation rate of nanolayer material. [ABSTRACT FROM AUTHOR]

Transition‐metal dichalcogenide (TMDC) islands and thin films are grown on TiO2(110) via physical vapor deposition of Mo and Se and are analyzed with electron diffraction, Auger spectroscopy, and scanning tunneling microscopy (STM). Surprisingly, large, crystalline TiSe2 patches develop on the TiO2 surface instead of the expected MoSe2 islands. They are identified by a hexagonal lattice with 3.4 Å periodicity, a unique (2 × 2) superstructure related to charge‐density waves, and an empty conductance doublet in STM spectroscopy. Density‐function‐theory calculations assign the imaging contrast and the conductance doublet to tunneling into the 3p orbitals of the topmost Se layer and Ti 3d‐related electronic states, respectively. Control experiments without Mo deposition confirm that the observed TMDC growth indeed results from a surface reaction between gas‐phase Se and Ti3+ atoms, segregating out of the reduced TiO2 crystal. From the unique shape and orientation of the TiSe2 islands in the low‐coverage regime, a distinct nucleation scheme is proposed, in which the Se(3 × 1) superstructure on TiO2 provides pinning centers for the TMDC. This article aims at increasing the awareness that Mo and Se co‐deposition does not automatically result in MoSe2 formation, but parasitic processes may trigger the growth of other TMDCs. [ABSTRACT FROM AUTHOR]

Transition‐metal dichalcogenide (TMDC) islands and thin films are grown on TiO2(110) via physical vapor deposition of Mo and Se and are analyzed with electron diffraction, Auger spectroscopy, and scanning tunneling microscopy (STM). Surprisingly, large, crystalline TiSe2 patches develop on the TiO2 surface instead of the expected MoSe2 islands. They are identified by a hexagonal lattice with 3.4 Å periodicity, a unique (2 × 2) superstructure related to charge‐density waves, and an empty conductance doublet in STM spectroscopy. Density‐function‐theory calculations assign the imaging contrast and the conductance doublet to tunneling into the 3p orbitals of the topmost Se layer and Ti 3d‐related electronic states, respectively. Control experiments without Mo deposition confirm that the observed TMDC growth indeed results from a surface reaction between gas‐phase Se and Ti3+ atoms, segregating out of the reduced TiO2 crystal. From the unique shape and orientation of the TiSe2 islands in the low‐coverage regime, a distinct nucleation scheme is proposed, in which the Se(3 × 1) superstructure on TiO2 provides pinning centers for the TMDC. This article aims at increasing the awareness that Mo and Se co‐deposition does not automatically result in MoSe2 formation, but parasitic processes may trigger the growth of other TMDCs. [ABSTRACT FROM AUTHOR]

Multilayer films can achieve advanced properties and a wide range of applications. The heterogeneous interface plays an important role in the performances of multilayer films. In this paper, the effects of the interface of Ba(Mg1/3Ta2/3)O3/PbZr0.52Ti0.48O3 (BMT/PZT) thin films on dielectric behavior and temperature stability are investigated. The heterogeneous interface structures are characterized by Auger electron spectroscopy (AES). The PZT-BMT interface is different from the BMT-PZT interface in thickness. For the PZT-BMT interface, the PZT thin films are diffused to the whole BMT layers, and the interface thickness is about 90 nm, while the BMT-PZT interface's thickness is only about 8.6 nm. The presence of heterogeneous interfaces can improve the performances of BMT/PZT thin films and expand their applications. The dielectric constant of BBPP thin films is significantly lower than BPBP thin films, while the dielectric loss is exactly the opposite. The more interfaces there are, the greater the dielectric constant. The relationship between the electric-field-dependent dielectric constant curve and the P-E curve is established. The equivalent interface barrier of the diode is used to show that the dielectric peaks under the positive and negative voltage are different. Similarly, heterogeneous interfaces show a certain improvement in dielectric tunability and temperature stability. [ABSTRACT FROM AUTHOR]

The high-entropy PVD coating (AlCrZrTiTa)N, characterized by its high hardness (50–60 GPa), elastic modulus above 300 MPa, and high heat resistance up to 1300 °C, is used for coating cutting tools operating under extreme metalworking conditions. The nanostructured monolayer 3 μm PVD coating was deposited on cutting plates in the hybrid arc deposition PVD coater. The coating had an amorphous nanocrystalline microstructure with a grain size of about 10–50 nm. The samples of SS 304 steel were investigated during dry high-speed (600 m/min) cutting. Raman spectroscopy was used to study the formation of tribooxides on the tool surface at the running-in stage of the cutting. After 130 m of cutting, Cr2O3 oxide appears on the wear surface while other elements are bound with N atoms. When the cutting length is increased to up to 260 m, oxide Al2O3 · ZrO2 (mullite) and amorphous oxides TaO2 and CrO2 are formed. The method EELFS made it possible to determine the amorphous nanocrystalline structure of triboceramics based on CrO2 and Al2O3 · ZrO2. The nearest atomic surrounding of Cr-Cr, O-O, and Cr-O and their subsequent comparison with the available literature data allow us to calculate the equilibrium lattice constants of the CrO2 unit cell, which are equal to (a, b) = 4.3754 Å and c = 0.5927. The triboceramic films on the base of non-equilibrium mullite Al2O3·ZrO2 have an amorphous structure. In the first coordination sphere, the interatomic distances of Zr-O and Al-O were 1.79 and 1.89 Å. An accelerated adaptive reaction to extreme external stimuli, at the very beginning of the running-in stage, is established. The tribological adaptability of the high-entropy ultra-fine amorphous nanocrystalline coating under extremely loaded dry high-speed cutting is based on non-equilibrium phenomena: the partial oxidation of fragments of the nitride and dynamic formation of protective tribooxides, which have a good thermal barrier and frictional properties. These factors interact synergistically and determine the life of the cutting tool. [ABSTRACT FROM AUTHOR]