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3. Vacuum-Healing of Grain Boundaries in Sodium-Doped CuInSe2 Solar Cell Absorbers

Author

Babbe, F, Babbe, F, Nicoara, N, Guthrey, H, Valle, N, Ramirez Sanchez, O, Aureau, D, Elanzeery, H, Sharma, D, Virtuoso, JL, Audinot, JN, Zelenina, A, Gharabeiki, S, Wirtz, T, Siebentritt, S, Dale, PJ, Sadewasser, S, Colombara, D, Babbe, F, Babbe, F, Nicoara, N, Guthrey, H, Valle, N, Ramirez Sanchez, O, Aureau, D, Elanzeery, H, Sharma, D, Virtuoso, JL, Audinot, JN, Zelenina, A, Gharabeiki, S, Wirtz, T, Siebentritt, S, Dale, PJ, Sadewasser, S, and Colombara, D

Abstract

Alkali metal doping and grain boundaries (GB) have been at the center of attention within the Cu(In,Ga)(S,Se)2 photovoltaics community for years. This study provides the first experimental evidence that the GB of sodium-doped CuInSe2 thin films may undertake reversible oxidation even at room temperature, whereas undoped films may not. The findings are corroborated by cathodoluminescence imaging, secondary ion mass spectrometry, and Kelvin probe force microscopy on air-exposed films subsequently subject to vacuum. A thermochemical assessment identifies the likely solid–gas equilibria involved. These reactions open new research questions with respect to the beneficial role played by alkali metal dopants in chalcopyrite solar cells and may steer the community toward new breakthroughs.

Published
2023

14. Surface reactivity of CIGS absorber on soda-lime and flexible substrates studied by XPS: a global approach of deoxidation, ageing and alkali elements distribution

Author

Bechu, S., primary, Loubat, A., additional, Bouttemy, M., additional, Balestrieri, M., additional, Gaiaschi, S., additional, Hildebrandt, T., additional, Achard, V., additional, Fregnaux, M., additional, Aureau, D., additional, Vigneron, J., additional, Donsanti, F., additional, Jubault, M., additional, Chapon, P., additional, Lincot, D., additional, Guillemoles, J.F., additional, and Etcheberry, A., additional

Published
2018
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16. Comparative time-resolved study of the XeF2 etching of Mo and Si.

Author

Veyan, J.-F., Aureau, D., Gogte, Y., Campbell, P., Yan, X.-M., and Chabal, Y. J.

Subjects
*MOLYBDENUM, *SILICON, *SEMICONDUCTOR doping, *SEPARATION (Technology), *CHEMICAL kinetics
Abstract

In situ and time-resolved infrared absorption spectroscopic measurements reveal that, under typical processing conditions (∼300 K, approximately Torr pressures), XeF2 reacts efficiently but very differently with Mo and Si substrates. This kinetic study of the surface etching processes, based on the time evolution of both reactants and products, demonstrates that the mechanisms for Mo and Si etching are different. While XeF2 produces substantial roughening and a thick fluorosilyl layer on the crystalline Si surface (>200 nm), it only reacts with the surface atoms of amorphous Mo with substantially slower kinetics. The measured kinetics are quantified by simulation and the final profile experimentally obtained on etched Si surface is shown to be consistent with a recent theoretical study of the characteristic diffusion-controlled etching of silicon. [ABSTRACT FROM AUTHOR]

Published
2010
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17. XeF2-induced removal of SiO2 near Si surfaces at 300 K: An unexpected proximity effect.

Author

Veyan, J.-F., Halls, M. D., Rangan, S., Aureau, D., Yan, X.-M., and Chabal, Y. J.

Subjects
SILICON, SILICA, TOXICOLOGICAL interactions, PROXIMITY spaces, OXIDES, DENSITY functionals
Abstract

XeF2 interaction with SiO2/Si stacks has been investigated to understand the role of Si in proximity of SiO2 during XeF2 exposures of Si/SiO2 stacks. In situ Fourier transform infrared absorption spectroscopy, using a custom-made reaction cell compatible with high XeF2 pressures, reveals that, while pure SiO2 is not etched by XeF2, the oxide in SiO2/Si stacks is effectively removed when XeF2 has access to the silicon, i.e., when the Si in close proximity to the oxide is etched. Thick oxides (∼1-2 μm) are removed if sample edges are accessible, while thinner oxides (50-100 nm) are removed without requiring edge access. This unexpected SiO2 removal is found to be due to the formation of reactive fluorine species (XeF and F) evolved by the reaction of XeF2 with Si, which can, subsequently, etch SiO2. Calculations based on density functional theory provide critical insight into the underlying energetics and reaction pathways controlling XeF2 etching of both Si and SiO2. [ABSTRACT FROM AUTHOR]

Published
2010
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18. Comparative time-resolved study of the Xe[F.sub.2] etching of Mo and Si

Author

Veyan, J.-F., Aureau, D., Gogte, Y., Campbell, P., Yan, X.-M., and Chabal, Y.J.

Subjects
Infrared spectroscopy -- Usage, Molybdenum -- Mechanical properties, Molybdenum -- Optical properties, Plasma etching -- Usage, Silicon -- Mechanical properties, Silicon -- Optical properties, Surface roughness -- Analysis, Xenon -- Optical properties, Xenon -- Electric properties, Physics
Abstract

In situ and time-resolved infrared absorption spectroscopic measurements have shown that Xe[F.sub.2] has reacted efficiently by very differently with Mo and Si substrates. The studies have shown that Xe[F.sub.2] has produced substantial roughening and a thick fluorosilyl layer on the crystalline Si surface, whereas it has only reacted with the surface atoms of amorphous Mo with substantially slower kinetics.

Published
2010

19. Xe[F.sub.2]-induced removal of Si[O.sub.2] near Si surfaces at 300 K: an unexpected proximity effect

Author

Veyan, J.-F., Halls, M.D., Rangan, S., Aureau, D., Yan, X.-M., and Chabal, Y.J.

Subjects
Fluorine -- Electric properties, Plasma etching -- Usage, Silicon -- Mechanical properties, Silicon -- Thermal properties, Silicon -- Electric properties, Xenon -- Electric properties, Physics
Abstract

Xe[F.sub.2] interaction with Si[O.sub.2]/Si stacks is examined to understand the role of Si in proximity of Si[O.sub.2] during Xe[Fe.sub.2] exposures of Si/Si[O.sub.2] stacks. The unexpected Si[O.sub.2] removal is shown to be due to the formation of reactive fluorine species (XeF and F) evolved by the reaction of Xe[F.sub.2] with Si, which has etched Si[O.sub.2].

Published
2010

20. Strontium titanate (100) surfaces monitoring by high temperature in situ ellipsometry

Author

Allain, Mickaël, Janolin, Pierre-Eymeric, Guiblin, Nicolas, Chikoidze, Ekaterina, Scola, Joseph, Popova, Elena, Deb, Marwan, Bocher, Laura, Gloter, Alexandre, Stephan, Odile, Warot-Fonrose, Bénédicte, Hrabovsky, David, Berini, Bruno, Fouchet, Arnaud, Aureau, D., Keller, Niels, Etcheberry, A., Dumont, Yves, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Analytical chemistry, General Physics and Astronomy, 02 engineering and technology, Epitaxy, 01 natural sciences, Overlayer, Atomic layer deposition, chemistry.chemical_compound, X-ray photoelectron spectroscopy, Ellipsometry, 0103 physical sciences, Thin film, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Surfaces and Interfaces, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, chemistry, 13. Climate action, Strontium titanate, 0210 nano-technology, Layer (electronics)
Abstract

We report monitoring and analysis of the contamination overlayer on the surface of different SrTiO3 (STO) substrates by in situ spectroscopic ellipsometry (SE) and ex situ X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Substrates of STO with different terminations, random and TiO2 terminated, were heated from room temperature up to 720 °C under oxygen pressure in UHV chamber similar to conditions commonly used for epitaxial growth of perovskite oxides. Contamination layer on the substrate was modeled as an equivalent dielectric overlayer with a thickness of 2 nm at room temperature which decreases progressively during the heating up to reach its minimum (around 1 unit cell) at the temperature around 550 °C. After exposition to air, surface recovers a contamination layer on both types of substrates (with random termination and TiO2 termination). XPS analysis confirmed that water and carbon dioxide as adventitious carbon species present in air are chemically adsorbed on the STO surface, providing evidence of desorption process which persists until 550 °C. This condition is an important issue in order to obtain clean controlled interface between STO and deposited film for low temperature growth as for instance atomic layer deposition and integration of STO buffer layer on silicon. In situ SE commonly present in thin layer deposition systems is a powerful tool to monitor in situ surface contamination and decontamination temperature as it can be performed in situ even in operando.

Published
2016

21. Developpement de l'ablation laser en champ proche couplee a l'ICP-MS pour l'analyse sub-micrometrique des echantillons solides

Author

Etcheberry, A., Aureau, D., Jabbour, C., Lacour, J.-L., Tabarant, M., Semerok, A., Chartier, F., amplexor, amplexor, CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
[PHYS.NUCL] Physics [physics]/Nuclear Theory [nucl-th], [PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th], [PHYS.NEXP] Physics [physics]/Nuclear Experiment [nucl-ex], [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2016

22. Surface Chemical Structure of Isolated Aerosols by X-ray Photoelectron Spectroscopy

Author

Sublemontier, Olivier, Benkoula, S., Aureau, D., Nicolas, C., Patanen, M., Kintz, H., Liu, X., Gaveau, M, Le Garrec, Jean-Luc, Robert, E., Barreda, F, Etcheberry, A, Reynaud, C, Mitchell, James, Miron, C, Palacin, Serge, Nanosciences et nanotechnologies - Caractérisation de nano-objets isolés à l'aide de techniques spectroscopiques dans le domaine des rayons X-mous - - NANO-PLEIADES2007 - ANR-07-NANO-0031 - NANO - VALID, Laboratoire Edifices Nanométriques (LEDNA), Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M) (NIMBE UMR 3685), Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Interactions, Dynamiques et Lasers (ex SPAM) (LIDyl), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), ANR-07-NANO-0031,NANO-PLEIADES,Caractérisation de nano-objets isolés à l'aide de techniques spectroscopiques dans le domaine des rayons X-mous(2007), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, X-ray Photoelectron Spectroscopy, chemical structure, isolated nanoparticle, [CHIM.MATE]Chemical Sciences/Material chemistry, surface characterization
Abstract

The experiments were performed at the PLEIADES beamline at the SOLEIL Synchrotron (Proposals No. 20110423 and 20130466).; International audience

Published
2016

28. The critical role of wavelength in the UV-activated grafting of 1-alkene onto silicon and silicon nitride SixN4 surfaces.

Author

Brunet, M., Aureau, D., Guillemot, F., Etcheberry, A., Ozanam, F., and Gouget-Laemmel, A. C.

Subjects
*SILICON nitride, *PHOTOCHEMICAL kinetics, *ALKENES, *DIMERS, *MOLECULAR electronics
Abstract

The wavelength used during photochemical grafting of alkene onto silicon related surfaces influences molecular surface coverage. Ultraviolet light leads to apparent highly dense layers on UV absorbing materials due to the side reaction between alkenes resulting in strongly physisorbed dimers whereas higher wavelengths lead to dense and well-controlled layers. [ABSTRACT FROM AUTHOR]

Published
2018
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42. XPS chemical state mapping in opto- and microelectronics

Author

Frégnaux Mathieu, Bourlier Yoan, Berini Bruno, Dumont Yves, and Aureau Damien

Subjects
Physics, QC1-999
Abstract

The strength of XPS imaging lies in its ability to (i) locate small patterns on sample surface, and (ii) inform, with micrometric lateral resolution, about the chemical environment of the elements detected at the surface. In this context, strontium-based perovskites appear to be well-adapted for such photoemission experiments thanks to their tunability and variability. These functional oxides have great potential for emerging optoand microelectronic applications, especially for transparent conductive oxide. Patterned heterostructure SrTiO3/SrVO3 was grown by pulsed laser deposition using a shadow mask. This stack was then analysed by XPS mapping in serial acquisition mode. Ti2p and V2p core level imaging clearly highlights the SrTiO3 and SrVO3 domains. The XPS mapping of the Sr3d core level will be extensively discussed: strontium being a common element to both oxides with a very similar chemical environment. Despite a lower contrast in Sr3d images, the two materials are discernible thanks to the topography. In addtion, the use of Sr3d FWHM image is a real asset to evidence the two phases. Finally, data processing by principal component analysis allows us to extract significant spectral information on the strontium atoms.

Published
2022
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43. Functionalization of Azide-Terminated Silicon Surfaces with Glycans Using Click Chemistry: XPS and FTIR Study

Author

Gouget-Laemmel, A. C., Yang, J., Lodhi, M. A., Siriwardena, A., Aureau, D., Boukherroub, R., Chazalviel, J.-N., Ozanam, F., and Szunerits, S.

Abstract

Efficient functionalization of silicon substrates is important for the development of silicon-based sensors. Organic monolayers directly bonded to hydrogen-terminated silicon substrates via Si–C bonds display enhanced stability toward hydrolytic cleavage. Here, we show that monolayers presenting a high density of terminal azide groups are amenable to bioconjugation with alkynyl-derivatized glycans via a copper-catalyzed azide–alkyne 1,3-dipolar cycloaddition. The prerequisite azide-functionalized silicon surface is fabricated via hydrosilylation of undecylenic acid with hydrogen-terminated silicon substrate followed by reaction of the thus formed monolayer of acid groups with short, bifunctional oligoethylene oxide chains carrying an amine function at one terminus and an azido group at the other. The possibility to functionalize these azido-surfaces with alkynyl-derivatized glycans such as propargyl mannose through a click protocol is demonstrated and evidenced using X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. In addition, the interaction of these mannose-adorned silicon substrates with glycan binding proteins such as Lens culinarislectin is investigated. The data establishes clearly the specificity of the interaction of this newly fabricated silicon surface for mannose-selective proteins as well as its reusability, thereby demonstrating its potential as a sensor.

Published
2013
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44. Isolated Nanoparticles' Surfaces and Interfaces Probed by Soft X-ray Photoelectron Spectroscopy

Author

Patanen, M., Sublemontier, Olivier, Papagiannouli, I, Gaudin, J., Blanchet, V., Lévy, Anna, Bassani, D, Benkoula, S., Liu, X.-J, Nicolas, C., Robert, E., Reynaud, C., Barreda, F.-A, Kintz, H, Gaveau, M.-A, Le Garrec, Jean-Luc, Aureau, D, Etcheberry, A, Huttula, M, Mitchell, James, Miron, C, University of Oulu, Laboratoire Edifices Nanométriques (LEDNA), Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M) (NIMBE UMR 3685), Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre d'Etudes Lasers Intenses et Applications (CELIA), Université de Bordeaux (UB)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Moléculaires (ISM), Université Montesquieu - Bordeaux 4-Université Sciences et Technologies - Bordeaux 1 (UB)-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Beihang University (BUAA), Laboratoire Interactions, Dynamiques et Lasers (ex SPAM) (LIDyl), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Horia Hulubei National Institute of Physics and Nuclear Engineering (NIPNE), IFIN-HH, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Bordeaux (UB), Université Montesquieu - Bordeaux 4-Université Sciences et Technologies - Bordeaux 1-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure de Chimie et de Physique de Bordeaux (ENSCPB)-Université Sciences et Technologies - Bordeaux 1-Université Montesquieu - Bordeaux 4-Institut de Chimie du CNRS (INC)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

45. Chemical engineering of Cu(In,Ga)Se2 surfaces: An absolute deoxidation studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy signatures.

Author

Loubat, A., Bouttemy, M., Gaiaschi, S., Aureau, D., Frégnaux, M., Mercier, D., Vigneron, J., Chapon, P., and Etcheberry, A.

Subjects
*SOLAR cells, *POLYCRYSTALS, *ELECTRON spectroscopy, *X-ray photoelectron spectroscopy, *CHALCOPYRITE, *COPPER
Abstract

CIGS (Cu(In,Ga)Se 2 ) absorbers are among the most efficient for photo-conversion. As part of their manufacturing cycle, absorber surface preparation is crucial for both the success of processes and the outcome of characterizations actions. This work tackles the question of an efficient deoxidation of CIGS surfaces. Chemical composition of surface is investigated thanks to XPS (X-ray Photoelectron Spectroscopy) characterizations. Present study focuses on the possible control of the CIGS absorber surface associated with simple HCl treatment and subsequent atmosphere ageing up to 20 days. Using 1.0 M HCl concentration solution, remarkable oxide elimination is achieved. Starting from an air aged as-grown surface (Cu and Se-poor), this treatment enables the generation of a deoxidized chalcopyrite reference sample. Furthermore, the reoxidation process of the treated surface at ambient atmosphere is studied considering the global evolution of the XPS signals as the best probe of the ageing process. The surface composition evolution represents a key parameter for the achievement of the following interfaces engineering. The main result is that the reoxidation process is not instantaneous (no significant oxide content before 2 days) and involves In, Ga and Se elements while the Cu seems less affected, leading again to a Cu-poor surface different from the initial one. [ABSTRACT FROM AUTHOR]

Published
2017
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46. In situ methods: discoveries and challenges: general discussion.

Author

Arrigo R, Aureau D, Bhatt P, Buckingham MA, Counter JJC, D'Acunto G, Davies PR, Evans DA, Flavell WR, Gibson JS, Guan S, Held G, Isaacs M, Kahk JM, Kastorp CFP, Kersell H, Krizan A, Large AI, Lindsay R, Lischner J, Lömker P, Morgan D, Nemšák S, Nilsson A, Payne D, Reed BP, Renault O, Rupprechter G, Shard AG, Shozi M, Silly MG, Skinner WSJ, Solal F, Stoerzinger KA, Suzer S, Velasco Vélez JJ, Walker M, and Weatherup RS

Published
2022
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48. Buried interfaces: general discussion.

Author

Aureau D, Bartels-Rausch T, Buckingham MA, Conard T, Dell'Angela M, Flavell W, Gibson JS, Held G, Isaacs M, Kastorp CFP, Krizan A, Lindsay R, Lömker P, Morgan D, Osundare A, Palgrave R, Pei Y, Renault O, Roberts A, Rupprechter G, Shard A, Solal F, Spencer B, and Weatherup R

Subjects
Protein Binding, Protein Conformation
Published
2022
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49. Ultra-clean high-mobility graphene on technologically relevant substrates.

Author

Tyagi A, Mišeikis V, Martini L, Forti S, Mishra N, Gebeyehu ZM, Giambra MA, Zribi J, Frégnaux M, Aureau D, Romagnoli M, Beltram F, and Coletti C

Abstract

Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene ( i.e. , approaching 10 000 cm 2 V -1 s -1 at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO 2 /Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene doping and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility μ h up to ∼9000 cm 2 V -1 s -1 and electron mobility μ e up to ∼8000 cm 2 V -1 s -1 , with average values μ h ∼ 7500 cm 2 V -1 s -1 and μ e ∼ 6300 cm 2 V -1 s -1 . The carrier mobility of ultraclean graphene reaches values nearly double than those measured in graphene processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics.

Published
2022
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50. Formation of a Single-Crystal Aluminum-Based MOF Nanowire with Graphene Oxide Nanoscrolls as Structure-Directing Agents.

Author

Muschi M, Lalitha A, Sene S, Aureau D, Fregnaux M, Esteve I, Rivier L, Ramsahye N, Devautour-Vinot S, Sicard C, Menguy N, Serre C, Maurin G, and Steunou N

Abstract

An innovative strategy is proposed to synthesize single-crystal nanowires (NWs) of the Al 3+ dicarboxylate MIL-69(Al) MOF by using graphene oxide nanoscrolls as structure-directing agents. MIL-69(Al) NWs with an average diameter of 70±20 nm and lengths up to 2 μm were found to preferentially grow along the [001] crystallographic direction. Advanced characterization methods (electron diffraction, TEM, STEM-HAADF, SEM, XPS) and molecular modeling revealed the mechanism of formation of MIL-69(Al) NWs involving size-confinement and templating effects. The formation of MIL-69(Al) seeds and the self-scroll of GO sheets followed by the anisotropic growth of MIL-69(Al) crystals are mediated by specific GO sheets/MOF interactions. This study delivers an unprecedented approach to control the design of 1D MOF nanostructures and superstructures., (© 2020 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Published
2020
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