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BACKGROUND: Dissolved oxygen (DO) in semen dilutor may lead to the production of reactive oxygen species (ROS) and buffalo sperm may become more prone to deleterious effects of ROS due to the presence of high amounts of polyunsaturated fatty acids (PUFAs) in their membranes. OBJECTIVE: To study the correlation between dissolved oxygen level, antioxidants and oxidants in semen diluted with partially deoxygenated extender at various stages of cryopreservation. MATERIALS AND METHODS: Each semen sample was split into two aliquots viz., Aliquot I [diluted with Extender I (control: without deoxygenation)] and Aliquot II [diluted with Extender II: partially deoxygenated by liquid nitrogen (LN) flushing], which were diluted, filled in straws, cryopreserved and evaluated post-thaw. RESULTS: The DO levels ( P < 0.05) decreased significantly after LN flushing of the extender and they increased significantly ( P < 0.05) in post-thaw semen. The progressive motility, viability, hypo-osmotic swelling response, acrosomal integrity, glutathione peroxidase (GPx), total antioxidant capacity (TAC) and superoxide dismutase (SOD) decreased significantly ( P < 0.05) in both control and treated semen after thawing. SOD and TAC were positively correlated in semen treated with normal extender at the pre-freeze stage; however, in semen treated with partially deoxygenated extender, no correlation was found between SOD and TAC at the pre-freeze stage. ROS and total TAC were negatively correlated in semen treated with partially deoxygenated extender at the pre-freeze stage; however, no correlation was found between ROS and TAC in control semen. CONCLUSION: The partial deoxygenation of extender affects the correlation between sperm quality parameters, antioxidants, and oxidants during different stages of semen cryopreservation.

Covid-19 pandemic is an unprecedented crisis and has changed dynamics of health care by severely straining the resources for patients coming for both elective and emergency surgeries. Ultrasound guided nerve block has been a life saver in most covid-19 positive patients coming for emergency surgical procedures as they reduce the risk of general anaesthesia in a patient with already compromised lung physiology and also minimizes risk of aerosol contamination of the operation theatre and health care personnel. We describe the anaesthetic management of a 67year old male patient with uncontrolled diabetes mellitus and sepsis for diabetic foot wound fasciotomy and wound debridement. The patient was operated under ultrasound guided popliteal sciatic and Saphenous nerve block of the right lower limb with all precautions taken to prevent covid spread as the patient had a high index of suspicion for covid-19. The patient was reported positive for RT-PCR in the postoperative period.

Uterine didelphys results from impaired fusion of the paired Müllerian ducts. The incidence of uterine anomalies is believed to be 0.5–2.0% of reproductive-age women, with didelphic uterus renal agenesis accounting for approximately 10%. Uterine didelphys is associated with in approximately 25% of cases1. Pre eclampsia is defined as SBP more than 160 mmhg, DBP more than 90 mmhg, associated with proteinuria and urine protein excretion >300mg in a 24 hour period or a protein creatinine ratio of atleast 0.32. Neuraxialblockade stands an effective mode of anaesthesia for these patients. Management of pre eclampticpatient with solitary kidney can be a challenge to anaesthesiologist due tovarious metabolic derangements including hyperkalemia, hypocalcemia, hyperphosphatemia and metabolic acidosis.Multidisciplinary approach is required to have good pregnancy outcome in these patients.

A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Junctionless Tunnel Field Effect Transistor (TFET). The purpose of this theoretical analysis is to break down two 1D equations of the 2D Poisson Equations. In this model, Triple Material Gates are decomposed into three different individual gates with different work functions. The Finite Differentiation Method is being enforced for this reason. By applying sufficient boundary constraints, the decomposed individual 1D Poisson equations are combined. In essence, this decreases the difficulty of solving Poisson equations in 2D. The analytical model proposed makes expressions of surface potential and drain current simpler. The reduction in the subthreshold swing which makes the device useful for low power applications. Finally, the outcomes of the study are correlated with the TCAD simulation. The proposed model is therefore validated to explain the nature of the Triple Material Surrounding Gate Junctionless TFETs.

In this paper, the analytical modeling of Trigate Junctionless FinFETs has been explored. The analytical model expresses the potential distribution, minimum center potential and threshold voltage. The variable separation method has been used to develop the potential distribution and threshold voltage. Further, the analytical model analyzed for different device parameters of Fin width, Fin height, Gate oxide thickness and gate work function. The analytical model results are compared with Synopsys TCAD results which proves the validation of proposed analytical model.

In nanoregime, heterojunction diodes have efficient applications in design and fabrication of sensors. Heterojunction diodes are formed by fusing two dissimilar semiconductors. Based on the combination of the materials used, these heterostructures find applications in bioelectronics and miniaturized sensors. In the literature, many different combinations are prevailing –GaN/AlGaN, Au/ZnO, NiO/ZnO. In this paper, a heterojunction diode is designed using Si/ ZnO combination and for the first time,the device is discovered to be used as pressure sensors.. The IV characteristics, energy band profile and CV curves of Si/ZnO is studied, analyzed and validated using TCAD-ATLAS software. This paper also proves that the performance of the device fits well for pressure sensing applications using COMSOL software.

The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET (TMSG – JL – TFET)based 6T SRAM structure is demonstrated by employing Germanium (Ge)and High-K gate dielectric material. The high – K insulation guarantees the proposed device to be used in low leakage memory systems. The corresponding analytical model is developed to extract various device parameters such as surface potential, electric field and threshold voltage. The results yield minimization of hot carrier effects at the drain end, when compared to conventional Silicon (Si) based tunnel FETs (TFETs). Further, the ambipolar characteristics of the proposed device is explored and 6T Ge – TMS – SG – JL – TFET based SRAM design is proposed. The results are compared with CMOS based SRAM and the analytical model presented is validated using 3D-TCAD ATLAS simulation, which ensures the accuracy and exactness of the developed model.

Aims: The paper has introduced an algorithmic modification of M.L.Das's previous work done of " IoT Mutual Authentication". Background: IoT has proven that if there exists a thing on the earth then it is bound to be connected to the internet to tell its feature on its own. IoT plays a remarkable role in all aspects of our daily lives it covers entertainment, sports, healthcare, education, security, automobiles, industrial as well as home appliances and many more real time applications. To ease our everyday activities, it reinforcing the way people interact with their surroundings. This holistic view brings some major concerns in terms of security and privacy. Objective: The objective of the work is to increase security and protect the algorithm from various attackers so to use with real time application. Methods: In this we have used XoR (Exclusive OR) operation and because of this we can protect the algorithm from DoS attacks, bypass attack, intruder attack and allow user to change password. Conclusion: The proposed work has secured all the connected IoT devices to work inde-pendently and secured because every device has to verify at each step in the IoT system before initiating its operation.