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The magnonic excitations of a dimerized, one-dimensional, antiferromagnetic chain can be trivial or topological depending on the signs and magnitudes of the alternating exchange couplings and the anisotropy. The topological phase that occurs when the signs of the two different exchange couplings alternate is qualitatively different from that of the Su-Schrieffer-Heeger model. A material that may exhibit these properties is the quasi-one-dimensional material MoI$_3$ that consists of dimerized chains weakly coupled to adjacent chains. The magnetic ground state and its excitations are analyzed both analytically and numerically using exchange and anisotropy parameters extracted from density functional theory calculations., Comment: 16 pages, 10 figures

We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin-film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ~300 m/s at the doping level of 3 x 10^19 1/cm3. Knowledge of the acoustic phonon velocities can be used to optimize ultra-wide bandgap semiconductor heterostructures and minimize the thermal boundary resistance of high-power devices., Comment: 16 pages; 4 figures

We report on the solution processing and testing of electronic ink comprised of quasi-one-dimensional NbS$_3$ charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS$_3$ crystals into high-aspect ratio quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene glycol solution. The results of the electrical measurements of two-terminal electronic test structures printed on silicon substrates reveal resistance anomalies in the temperature range of ~330 K to 370 K. It was found that the changes in the temperature-dependent resistive characteristics of the test structures originate from the charge-density-wave phase transition of individual NbS$_3$ fillers. The latter confirms that the exfoliated NbS$_3$ fillers preserve their intrinsic charge-density-wave quantum condensate states and can undergo phase transitions above room temperature even after chemical exfoliation processes and printing. These results are important for developing "quantum inks" with charge-density-wave fillers for the increased functionality of future solution-processed electronics., Comment: 25 pages; 5 figures

We report the results of the investigation of the acoustic and optical phonons in quasi-two-dimensional antiferromagnetic semiconductors of the transition metal phosphorus trisulfide family with Mn, Fe, Co, Ni, and Cd as metal atoms. The Brillouin-Mandelstam and Raman light scattering spectroscopies were conducted at room temperature to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The absorption and index of refraction were measured in the visible and infrared ranges using the reflectometry technique. We found an intriguing large variation, over ~28%, in the acoustic phonon group velocities in this group of materials with similar crystal structures. Our data indicate that the full-width-at-half-maximum of the acoustic phonon peaks is strongly affected by the optical properties and the electronic band gap. The acoustic phonon lifetime extracted for some of the materials was correlated with their thermal properties. The obtained results are important for understanding the layered van der Waals semiconductors and for assessing their potential for optoelectronic and spintronic device applications., Comment: 19 pages; 4 figures

Materials with high thermal conductivity are needed to conduct heat away from hot spots in power electronics and optoelectronic devices. Cubic boron arsenide (c-BAs) has a high thermal conductivity due to its special phonon dispersion relation. Previous experimental studies of c-BAs report a room-temperature thermal conductivity between 1000 and 1300 watts per meter-kelvin. We synthesized high purity c-BAs single crystals with room-temperature thermal conductivity of 1500 watts per meter-kelvin. We observed its thermal conductivity to be proportional to the inverse square of temperature between 300 and 600 kelvin, a stronger dependence than predicted by state-of-the-art theory., Comment: 14 pages, 3 figures

We investigated low-frequency current fluctuations, i.e. electronic noise, in FePS3 van der Waals, layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectroscopy for advanced materials characterization of the charge carrier dynamics affected by spin ordering and trapping states. Owing to the high resistivity of the material, we conducted measurements on vertical device configuration. The measured noise spectra reveal pronounced Lorentzian peaks of two different origins. One peak is observed only near the Neel temperature and it is attributed to the corresponding magnetic phase transition. The second Lorentzian peak, visible in the entire measured temperature range, has the characteristics of the trap-assisted generation-recombination processes similar to those in conventional semiconductors but shows a clear effect of the spin order reconfiguration near the Neel temperature. The obtained results contribute to understanding the electron and spin dynamics in this type of antiferromagnetic semiconductors and demonstrate the potential of electronic noise spectroscopy for advanced materials characterization., Comment: 24 pages; 4 figures

Low-frequency electronic noise in charge-density-wave van der Waals materials has been an important characteristic, providing information about the material quality, phase transitions, and collective current transport. However, the noise sources and mechanisms have not been completely understood, particularly for the materials with a non-fully gapped Fermi surface where the electrical current includes components from individual electrons and the sliding charge-density wave. We investigated noise in nanowires of quasi-one-dimensional NbSe$_3$, focusing on a temperature range near the Pearls transition ~ 145 K. The data analysis allowed us to separate the noise produced by the individual conduction electrons and the quantum condensate of the charge density waves before and after the onset of sliding. The noise as a function of temperature and electric bias reveals several intriguing peaks. We explained the observed features by the depinning threshold field, the creep and sliding of the charge density waves, and the possible existence of the hidden phases. It was found that the charge density wave condensate is particularly noisy at the moment of depinning. The noise of the collective current reduces with the increasing bias voltage in contrast to the noise of the individual electrons. Our results shed light on the behavior of the charge density wave quantum condensate and demonstrate the potential of noise spectroscopy for investigating the properties of low-dimensional quantum materials., Comment: 27 pages; 7 figures

We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity of their Raman spectra. While TaTe4 exhibits well-defined peaks through the examined frequency and temperature ranges, NbTe4 reveals extremely weak Raman signatures. The measured spectral positions of the phonon peaks agree with the phonon band structure calculated using the density-functional theory. We offer possible reasons for the in-tensity differences between the two van der Waals materials. Our results provide insights into the phonon properties of NbTe$_4$ and TaTe$_4$ van der Waals materials and indicate the potential of Raman spectroscopy for studying charge-density-wave quantum condensate phases., Comment: 24 pages; 6 figures; 1 table

We report on the field-effect modulation of the charge-density-wave quantum condensate in the top-gated heterostructure devices implemented with quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN gate dielectric layers. The charge-density-wave phases and collective current in quasi-1D NbS$_3$ nanowires were verified via temperature dependence of the resistivity, non-linear current-voltage characteristics, and Shapiro steps that appeared in the device response under radio frequency excitation mixed with the DC bias. It was demonstrated that the electric field of the applied gate bias can reversibly modulate the collective current of the sliding charge-density-wave condensate. The collective current reduces with more positive bias suggesting a surface effect on the condensate mobility. The single particle current, at small source-drain biases, shows small amplitude fluctuation behavior, attributed to the variations in the background potential due to the pinned or creeping charge-density-wave condensate. The knowledge of the electric-field effect on the charge density waves in quasi-1D NbS$_3$ nanowires is useful for potential electronic applications of such quantum materials., Comment: 17 pages; 5 figures

We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). We observed an intriguing non-monotonic dependence of the noise on temperature near T = 380$^\circ$ K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-14}$ cm$^2$/Hz (f = 10 Hz) at 0.1 A/cm$^2$ current density. In terms of the noise level, NiO$_x$/Ga$_2$O$_3$ p-n diodes occupy an intermediate position among devices of various designs implemented with different ultra-wide-band-gap (UWBG) semiconductors. The obtained results are important for understanding the electronic properties of the UWBG heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies., Comment: 18 pages, 6 figures

We report an investigation of the bulk optical, bulk acoustic, and surface acoustic phonons in thin films of turbostratic boron nitride (t-BN) and cubic boron nitride (c-BN) grown on B-doped polycrystalline and single-crystalline diamond (001) and (111) substrates. The characteristics of different types of phonons were determined using Raman and Brillouin-Mandelstam light scattering spectroscopies. The atomic structure of the films was determined using high-resolution transmission electron microscopy (HRTEM) and correlated with the Raman and Brillouin-Mandelstam spectroscopy data. The HRTEM analysis revealed that the cubic boron nitride thin films consisted of a mixture of c-BN and t-BN phases, with c-BN being the dominant phase. It was found that while visible Raman spectroscopy provided information for characterizing the t-BN phase, it faced challenges in differentiating the c-BN phase either due to the presence of high-density defects or the overlapping of the Raman features with those from the B-doped diamond substrates. In contrast, Brillouin-Mandelstam spectroscopy clearly distinguishes the bulk longitudinal and surface acoustic phonons of the c-BN thin films grown on diamond substrates. Additionally, the angle-dependent surface Brillouin-Mandelstam scattering data show the peaks associated with the Rayleigh surface acoustic waves, which have higher phase velocities in c-BN films on diamond (111) substrates. These findings provide valuable insights into the phonon characteristics of the c-BN and diamond interfaces and have important implications for the thermal management of electronic devices based on ultra-wide-band-gap materials., Comment: 27 pages; 4 figures

We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS$_2$ van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS$_2$ devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, $E_D$, monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The $E_D$ value increases with the decreasing 1T-TaS$_2$ film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that depinning is absent in the commensurate phase. It is induced by the electric field but facilitated by local heating. The measured trends for $E_D$ of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials., Comment: 25 pages; 7 figures

We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-12}$ cm$^2$/Hz (f=10 Hz) at 1 A/cm$^2$ current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier, and correspondingly, impact the electric current. The obtained results help to understand noise in Schottky barrier diodes made of ultra-wide-band-gap semiconductors and can be used for the material and device quality assessment., Comment: 16 pages, 6 figures

We demonstrate a unique class of advanced materials - quantum composites based on polymers with fillers comprised of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to collapses of the quantum states. We succeeded in preserving the macroscopic charge-density-wave phases of filler particles after multiple composite processing steps. The prepared composites manifest strong charge-density-wave phenomena even above room temperature. The dielectric constant experiences more than two orders of magnitude enhancement while the material maintains its electrically insulating properties, opening a venue for advanced applications in energy storage and electronics. The results present a conceptually different approach for engineering the properties of materials, extending the application domain for van der Waals materials., Comment: 23 pages, 5 figures

The development of cryogenic semiconductor electronics and superconducting quantum computing requires composite materials that can provide both thermal conduction and thermal insulation. We demonstrated that at cryogenic temperatures, the thermal conductivity of graphene composites can be both higher and lower than that of the reference pristine epoxy, depending on the graphene filler loading and temperature. There exists a well-defined cross-over temperature - above it, the thermal conductivity of composites increases with the addition of graphene; below it, the thermal conductivity decreases with the addition of graphene. The counter-intuitive trend was explained by the specificity of heat conduction at low temperatures: graphene fillers can serve as, both, the scattering centers for phonons in the matrix material and as the conduits of heat. We offer a physical model that explains the experimental trends by the increasing effect of the thermal boundary resistance at cryogenic temperatures and the anomalous thermal percolation threshold, which becomes temperature dependent. The obtained results suggest the possibility of using graphene composites for, both, removing the heat and thermally insulating components at cryogenic temperatures - a capability important for quantum computing and cryogenically cooled conventional electronics., Comment: 27 pages, 4 figures

We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate that MoI$_3$ is an easy-plane antiferromagnet with alternating spins along the dimerized chains and with inter-chain helical spin ordering. The calculated frequencies of the phonons and magnons are consistent with the interpretation of the experimental Raman data. The obtained results shed light on the specifics of the phononic and magnonic states in MoI$_3$ and provide a strong motivation for future study of this unique material with potential for spintronic device applications., Comment: 28 pages

We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the current, S~I^2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T~225 K. These spectral changes were attributed to the charge-density-wave phase transition even though the temperature of the noise maximum deviates from the reported Peierls transition temperature in bulk (TaSe$_4$)$_2$I crystals. The noise level, normalized by the channel area, in these Weyl semimetal nanoribbons was surprisingly low, $\sim 10^{-9}$ um$^2$Hz$^{-1}$ at f=10 Hz, when measured below and above the Peierls transition temperature. Obtained results shed light on the specifics of electron transport in quasi-1D topological Weyl semimetals and can be important for their proposed applications as downscaled interconnects., Comment: 20 pages, 5 figures

We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses., Comment: 26 pages, 5 figures

We report the results of the investigation of bulk and surface acoustic phonons in the undoped and boron-doped single-crystal diamond films using the Brillouin-Mandelstam light scattering spectroscopy. The evolution of the optical phonons in the same set of samples was monitored with Raman spectroscopy. It was found that the frequency and the group velocity of acoustic phonons decrease non-monotonically with the increasing boron doping concentration, revealing pronounced phonon softening. The change in the velocity of the shear horizontal and the high-frequency pseudo-longitudinal acoustic phonons in the degenerately doped diamond, as compared to the undoped diamond, was as large as ~15% and ~12%, respectively. As a result of boron doping, the velocity of the bulk longitudinal and transverse acoustic phonons decreased correspondingly. The frequency of the optical phonons was unaffected at low boron concentration but experienced a strong decrease at the high doping level. The density-functional-theory calculations of the phonon band structure for the pristine and highly-doped sample confirm the phonon softening as a result of boron doping in diamond. The obtained results have important implications for thermal transport in heavily doped diamond, which is a promising material for ultra-wide-band-gap electronics., Comment: 27 pages; 5 figures

The advent of graphene and other two-dimensional van der Waals materials, with their unique electrical, optical, and thermal properties, has resulted in tremendous progress for fundamental science. Recent developments suggest that taking one more step down in dimensionality - from monolayer, atomic sheets to individual atomic chains - can bring exciting prospects as the ultimate limit in material downscaling is reached while establishing an entirely new field of one-dimensional quantum materials. Here we review this emerging area of one-dimensional van der Waals quantum materials and anticipate its future directions. We focus on quantum effects associated with the charge-density-wave condensate, strongly-correlated phenomena, topological phases, and other unique physical characteristics, which are attainable specifically in van der Waals materials of lower dimensionality. Possibilities for engineering the properties of quasi-one-dimensional materials via compositional changes, vacancies, and defects, as well as the prospects of their applications in composites are also discussed., Comment: 52 pages; 10 figures

We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS$_2$ crystals to produce fillers with nm-scale thickness and um-scale lateral dimensions. Exfoliated 1T-TaS$_2$ was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of their thermo-physical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS$_2$ are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly-commensurate to commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS$_2$ fillers rather than by electron-hopping transport between them. These results provide pathways for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials., Comment: 25 pages; 5 figures

We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices - it scales as I^2 at the low (I<10 uA) and high (I>10 mA) currents, and, rather unusually, remain nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, reveal a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with increasing temperature. The obtained results are important for development of noise spectroscopy-based approaches for device reliability assessment for the high-power diamond electronics., Comment: 17 pages; 4 figures

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S, dependence on the current was S ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10^-18 cm2/Hz -- 10^-16 cm2/Hz (f=10 Hz) at the current density J=1 A/cm2 at room temperature. The noise temperature dependences at different currents revealed peaks at T=375 K -- 400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. We argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes., Comment: 12 pages; 4 figures

We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3 nanoribbons exfoliated onto gold substrates. At a selenium deficiency of ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit a strong, broad PL peak centered around ~920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785-nm laser excitation, allowing for their nanoscale spectroscopic imaging. Nanoribbons with a smaller selenium deficiency of ~0.15 (Se/Ta=2.85) did not show any PL or TERS response. The confocal Raman spectra of these samples agree with the previously-reported spectra of metallic TaSe3. The differences in the optical response of the nanoribbons examined in this study suggest that even small variations in Se content can induce changes in electronic structure, causing samples to exhibit either metallic or semiconducting character. The temperature-dependent electrical measurements of devices fabricated with both types of materials corroborate these observations. The density-functional-theory calculations revealed that incorporation of an oxygen atom in a Se vacancy can result in band gap opening and thus enable the transition from a metal to a semiconductor. However, the predicted bandgap is substantially smaller than that derived from PL data. These results indicate that the properties of van der Waals materials can vary significantly depending on stoichiometry, defect types and concentration, and possibly environmental and substrate effects. In view of this finding, local probing of nanoribbon properties with TERS becomes essential to understanding such low-dimensional systems., Comment: 24 pages, 8 figures

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we measured noise in h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field (B) with a minimum at approximately uB=1 (u is the electron mobility). This observation proves unambiguously that the mobility fluctuations are the dominant mechanism of the electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/f noise origin in any electronic device., Comment: 23 pages, 3 figures, Noise measurements of h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations