107 results on '"Babcock, S. E."'
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2. Thin Film Magnesium Boride Superconductor with Very High Critical Current Density and Enhanced Irreversibility Field
3. A psychometric evaluation of the interRAI Child and Youth Mental Health instruments (ChYMH) anxiety scale in children with and without developmental disabilities
4. New Experiments Elucidating the Current Limiting Mechanisms of Ag-Sheathed (Bi,Pb)2Sr2Ca2Cu3Ox Tapes
5. Growth and characterization of conductive SrRuO3 and LaNiO3 multilayers on textured Ni tapes for high-Jc Yba2Cu3O7–delta; coated conductors
6. Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy
7. The Effect of Growth Temperature on the Microstructure of MOVPE AIN/Si (111)
8. Block Copolymer Templating for Formation of Quantum Dots and Lattice-Mismatched Semiconductor Structures
9. High critical current density and enhanced irreversibility field in superconducting MgB2 thin films
10. Structure of AIN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy
11. High antimony content GaAs1-zNz–GaAs1-ySby type-II “W” structure for long wavelength emission.
12. Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1−xBixexplored by atom probe tomography and HAADF-STEM
13. Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration.
14. Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation.
15. Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging
16. Quantum-cascade-laser active regions on metamorphic buffer layers
17. Unexpected Bismuth Concentration Profiles in MOVPE GaAs1-xBix Films Revealed by HAADF STEM Imaging
18. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy
19. Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy
20. High antimony content GaAs1−zNz–GaAs1−ySby type-II “W” structure for long wavelength emission
21. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography
22. InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP Substrates for Mid-IR Diode Lasers
23. Design and characterization of strained InGaAs/GaAsSb type-II ‘W’ quantum wells on InP substrates for mid-IR emission
24. Characteristics of strained GaAs1−ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates
25. Annealing of dilute-nitride GaAsSbN∕InP strained multiple quantum wells
26. Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1-xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging.
27. Anisotropic grain morphology, crystallographic texture and their implications for flux pinning mechanisms in MgB2pellets, filaments and thin films
28. Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity inc-axis oriented MgB2thin films
29. Influence of nickel substrate grain structure on YBa2Cu3O7−x supercurrent connectivity in deformation-textured coated conductors
30. Studies of the improvement in microstructure of Y2O3buffer layers and its effect on YBa2Cu3O7-xfilm growth
31. Large enhancement of critical-current density due to vortex matching at the periodic facet structure inYBa2Cu3O7−δbicrystals
32. Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE
33. Evidence for channel conduction in low misorientation angle [001] tilt YBa2Cu3O7−x bicrystal films
34. Faceting, dislocation network structure, and various scales of heterogeneity in a YBa2Cu3O7−δ low-angle [001] tilt boundary
35. Electromagnetic and microstructural investigations of a naturally grown 8° [001] tilt bicrystal of Bi2Sr2CaCu208 + x
36. The Nature of Grain Boundaries in the High-Tc Superconductors
37. Quantum-cascade-laser active regions on metamorphic buffer layers
38. (001) faceting and Bi2Sr2CuO6+x(Tc=7–22 K) phase formation at the Ag/Bi‐Sr‐Ca‐Cu‐O interface in Ag‐clad Bi2Sr2CaCu2O8+x(Tc=75–95 K) superconducting tapes
39. CHARACTERISTICS OF GRAIN BOUNDARIES IN YBCO AND BSCC0-2212 LYING IN THE LOW ANGLE TO HIGH ANGLE CROSSOVER REGIME.
40. Correction: Weak-link-free behaviour of high-angle YBa2Cu3O7–δ grain boundaries in high magnetic fields
41. Weak-link-free behaviour of high-angle YBa2Cu3O7–δ grain boundaries in high magnetic fields
42. Observations and implications of grain boundary dislocation networks in high-angle YBa2Cu3O7−δ grain boundaries
43. Growth and characterization of conductive SrRuO3 and LaNiO3 multilayers on textured Ni tapes for high-Jc Yba2Cu3O7–delta; coated conductors.
44. The Nature of Grain Boundaries in the High-Tc Superconductors.
45. Structure and properties of an intragranular weak link in Bi2Sr2CaCu2O8+x single crystals
46. Microstructure of a high Jc, laser-ablated YBa2Cu3O7-d/sol-gel deposited NdGaO3 buffer layer/(001) SrTiO3 multi-layer structure
47. Development of a glass-bonded compliant substrate
48. Secondary grain boundary dislocation structures in gold and silver 〈001〉 twist boundaries revisited
49. Systematic copper concentration variations along grain boundaries in bulk-scale YBa~2Cu~3O~7~-~d bicrystals
50. Microstructure of electron-beam-evaporated epitaxial yttria-stabilized zirconia/CeO~2 bilayers on biaxially textured Ni tape
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