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The Musharraf formula refers to the resolution formula of the Kashmir conflict which was reportedly agreed upon during the one-to-one backchannel dialogue between Mr. Tariq Aziz, the former civil servant and close aide of the then President of Pakistan, General Pervez Musharraf and Mr.Satinder Lambah, a special envoy of the Prime Minister of India. We now know some of the details of this formula from the article of the American journalist, Steve Coll which he had published in New Yorker inMarch 2009 and the book of Mr.Khursheed Mahmud Kasuri, ‘Neither a Hawk nor a Dove’which was published in 2015. Prior to this Mr.Musharraf and Mr.Kasuri had already claimed in their TV interviews and press talks that by March 2007 India and Pakistan were very close to resolving the Kashmir conflict. This paper takes the details of that non-paper agreement and tries to study what exactly that agreement holds for the future resolution of the Kashmir conflict. The basic understanding is whenever the Pakistani and the Indian governments will take up the negotiations on the Kashmir conflict in future, this agreement is bound to come up in the talks as a starting reference point. Therefore, it is necessary to carefully look at this agreement and discuss what it entails for the resolution of the Kashmir conflict.

Metal oxide semiconductors have gained much interest in the field of next generation consumer electronics due to the worldwide development of flexible electronic devices and strong demand for high-resolution, high-frame-rate displays. For the practical application of metal oxide thin-film transistors on the industrial level, it is crucial to secure device stability. This highlight article provides an overview on the enhanced stability of metal oxide thin-film transistors via the employment of organic materials as passivation layers. Discussions on the organic materials which are categorized into four groups include the most recent accomplishments in organic passivation for metal oxide semiconductors. The most up-to-date modification of the metal oxide semiconductor back channel, rationales for the employment of organic materials as a passivation layer, and discussions on the mechanism of device stability enhancement are presented. Thus, this review is expected to inspire new research for future developments and applications of organic passivation layers for metal oxide semiconductors.

What role does professional diplomacy play in shaping outcomes that matter to the United States in the world? One would think the answer is obvious – quite a lot. Effective statecraft is critical t...

This chapter focuses on the use of the back-channel between the British government and the IRA from 1991 through 1993 and on the distinctive role of secrecy in the development of a sense of common purpose between the parties. It highlights the contribution of key British officials who advocated the reopening of the channel and an inclusive peace settlement. It also examines the importance of back-channel links between the Irish government and the SDLP on one hand, and Sinn Féin on the other, in creating pressure for progress. From 1989 onwards, the British government and the IRA made conciliatory public statements and gestures. Then, in April 1991, the British government reopened the back-channel to the IRA, sending an emissary to ask Brendan Duddy to act once again as intermediary. The particular back-channel involving Duddy established a joint project of secrecy, creating a shared task that built trust and mutual understanding. Close interpersonal relationships, continuity of personnel with previous phases of conflict, and the exclusion of internal opponents contributed to distinctively strong cooperative dynamics that helped to sustain cooperation and generate substantial progress.

Nixon alla Casa Bianca. Il Back Channel Kissinger/Dobrynin. Gli accordi SALT nelle conversazioni tra Kissinger e Dobrynin. Kissinger e il Medio Oriente. Vietnam, una pesante eredit�.

FDSOI devices are prominently used in low power circuits and high frequency domains due to their superior RF and analog performance, thanks to back-bias capability and relatively ease of transistor design over FinFETs and planar bulk transistors. BSIM-IMG is the industry standard compact model for simulating FDSOI devices. In this work, we will discuss recent enhancements made in the BSIM-IMG model for accurate modeling of the FDSOI transistors. The back gate inversion is more physically modeled in the latest BSIM-IMG model. We will present a new 1/f noise model, which is validated with the experimental data. Improved output conductance, mobility and gate current models are also discussed. All the enhancements are done in such a way that benchmark RF figure of merit are met.

The thin-film transistors (TFTs) with back-channel etched (BCE) type enable channel length to be narrow and reduce parasitic capacitances owing to its shorter overlaps between the gate and source/drain (S/D) electrodes. In this study, a high-performance BCE-type oxide thin-film transistor was proposed for investigation. A novel stacked double layer In-W-O (IWO) / In-W-Zn-O (IWZO) channel structure was fabricated and developed. Respectively, IWZO exhibits a high resistance to back-channel etching damage and IWO channel achieve a high mobility. The double layer IWO/IWZO TFTs are promising candidates for driving active matrix organic light-emitting diode (AMOLED) and high resolution display applications in the future. The double layer IWO/IWZO TFTs with S/D pattern by H2O2 + KOH can exhibit the high-performance electrical characteristic. The field-effect mobility (µFE) ~ 21.1cm2/V-s, subthreshold swing (S.S.) ~ 0.15 V/dec., threshold voltage (VTH) ~ -0.092 V, and on/off ratio ~ 4.88×108 can be achieved.

The electrical instability of a-IGZO TFTs limits its application in future display. Here, we investigate the effects of nitrogen doping on the electrical properties and bias stability of a-IGZO TFTs, and the IGZO films were obtained by magnetron sputtering using ceramic targets (In:Ga:Zn = 4:2:2). The performance and bias stability of a-IGZO TFTs are improved synergistically. The optimized device has a high mobility of 38.36 cm2/vs, threshold voltage of 1.11 V, subthreshold swing of 101.2 mV/dec, and the performance and stability are effectively improved, which may be mainly due to the back channel gradient nitrogen doping avoiding the formation of heterojunction interface and reducing the defect of bulk channel layer.

This essay reviews the following works: Rivalry and Alliance Politics in Cold War Latin America. By Christopher Darnton. Baltimore, MD: Johns Hopkins University Press, 2014. Pp. ix + 285. $44.95 paper. ISBN: 9781421413617. Neither Peace nor Freedom: The Cultural Cold War in Latin America. By Patrick Iber. Cambridge, MA: Harvard University Press, 2015. Pp. 1 + 327. $39.95 cloth. ISBN: 9780674286047. Mexico’s Cold War: Cuba, the United States, and the Legacy of the Mexican Revolution. By Renata Keller. New York: Cambridge University Press, 2015. Pp. xix + 274. $103.00 cloth. ISBN: 9781107079588. Back Channel to Cuba: The Hidden History of Negotiations between Washington and Havana. By William M. LeoGrande and Peter Kornbluh. Chapel Hill: University of North Carolina Press, 2014. Pp. xiv + 524. $25.00 paper. ISBN: 9781469617633. Reagan and Pinochet: The Struggle over U.S. Policy toward Chile. By Morris Morley and Chris McGillion. New York: Cambridge University Press, 2015. Pp. xiii + 338. $35.99 paper. ISBN: 9781107458093.

This work investigates the source-drain (S-D) parasitic resistance (RSD) characteristics of the back-channel-etched (BCE) a-IGZO TFTs with ultra-thin Nb doped TiO2 (TNO) protective layer. It is shown that RSD is strongly related to the thickness of the TNO protective layer although the electrical performances of the BCE a-IGZO TFTs with different TNO thickness are similar to each other. The BCE TFT with 3 nm TNO shows an unusually large RSD value (300 Ω cm). It is suggested that a ~3 nm TNO depletion layer should be formed at the TNO/a-IGZO interface in the S-D region in this case. In addition, RSD of the BCE TFTs with 1 and 5 nm TNO is 11 and 26 Ω cm, respectively. The low RSD of these two devices is caused by much thinner TNO depletion layers in the S-D region. Besides, a moderate RSD of 53 Ω cm for the S-D lift-off device can be ascribed to a lower a-IGZO band bending at the Mo/a-IGZO interface than that of the BCE devices at the TNO/a-IGZO interface.

We investigated the effect of back channel material which plays as a channel defining layer in vertical TFT for the application to the TFT of ultra-high resolution display. Although the IGZO vertical TFT with polyimide back channel has low mobility, it shows good on/off ratio higher than 107 , low gate leakage current, and hard saturation behavior with channel length of 1 um.

Coplanar bottom-gate aluminum-zinc-oxide (AZO) thin film transistors (TFTs) with aluminum (Al) capping layers were fabricated in this work. The influences of the Al capping layer thickness and the post-annealing condition on the performance of the AZO-TFTswere investigated. Results show that the performance of the AZO-TFTs are enhanced significantly by introducing the Al capping layer on back channel, with saturation mobility increasing dramatically from 0.128 to 12.6 cm2/ $\text {V}\cdot \text {s}$ . The enhancement is ascribed to the diffusion of Al atoms into the AZO thin film and thus induced crystallization improvement.

We have studied changes of sub-gap defect states in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) by means of photoinduced transient spectroscopy (PITS). It is found that the sub-gap states in the channel region of a-IGZO TFTs were drastically modified as back-channel etch process proceeded. The change was due to in-and out-diffusion of hydrogen atoms in the channel region of a-IGZO TFTs, which affects the performance of the a-IGZO TFTs.

Back-channel-etch amorphous zinc tin oxide thin film transistors (a-ZTO TFTs) are fabricated with various thicknesses and deposition rates of gate insulator (GI). The devices exhibit a higher field-effect mobility and better electrical stress stability with GI thickness decreasing. Furthermore, field-effect mobility and electrical stress stability can be improved by slow GI deposition rate, caused by smoother GI surface. Moreover, combining with percolation theory, we propose a ZTO carrier transport model to explain the experimental phenomenon. The optimized device exhibits good electrical performances: modest saturation mobility of 10 cm2/Vs, on/off ratio > 108 and subthreshold swing of 0.60V/dec. Besides, V th shift under negative and positive V gs is −0.28V and +0.17V, respectively.

A back-channel-etched process with Ti protective layer was used to fabricate the amorphous a-IGZO TFTs. To oxidize the Ti to $TiO_{2}$ on the back channel, kinds of plasma treatments were imposed to the Ti protective layer. The device with $N_{2}O$ plasma at 300°C in PECVD exhibits superior oxidizing effect, which is well compatible with large area production.