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418 results on '"Bai, Na"'

1. AMSNet: Netlist Dataset for AMS Circuits

Author

Tao, Zhuofu, Shi, Yichen, Huo, Yiru, Ye, Rui, Li, Zonghang, Huang, Li, Wu, Chen, Bai, Na, Yu, Zhiping, Lin, Ting-Jung, and He, Lei

Subjects
Computer Science - Computer Vision and Pattern Recognition
Abstract

Today's analog/mixed-signal (AMS) integrated circuit (IC) designs demand substantial manual intervention. The advent of multimodal large language models (MLLMs) has unveiled significant potential across various fields, suggesting their applicability in streamlining large-scale AMS IC design as well. A bottleneck in employing MLLMs for automatic AMS circuit generation is the absence of a comprehensive dataset delineating the schematic-netlist relationship. We therefore design an automatic technique for converting schematics into netlists, and create dataset AMSNet, encompassing transistor-level schematics and corresponding SPICE format netlists. With a growing size, AMSNet can significantly facilitate exploration of MLLM applications in AMS circuit design. We have made an initial set of netlists public, and will make both our netlist generation tool and the full dataset available upon publishing of this paper.

Published
2024

2. Designing wake-up free ferroelectric capacitors based on the $\mathrm{HfO_2/ZrO_2}$ superlattice structure

Author

Bai, Na, Xue, Kan-Hao, Huang, Jinhai, Yuan, Jun-Hui, Wang, Wenlin, Mao, Ge-Qi, Zou, Lanqing, Yang, Shengxin, Lu, Hong, Sun, Huajun, and Miao, Xiangshui

Subjects
Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been reported to be effective in eliminating wake-up, but high temperature may yield the monoclinic phase or generate high concentration oxygen vacancies. In this work, a unidirectional annealing method is proposed for the crystallization of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) superlattice ferroelectrics, which involves heating from the $\mathrm{Pt/ZrO_2}$ interface side. Nanoscale $\mathrm{ZrO_2}$ is selected to resist the formation of monoclinic phase, and the chemically inert Pt electrode can avoid the continuous generation of oxygen vacancies during annealing. It is demonstrated that $\mathrm{600^oC}$ annealing only leads to a moderate content of monoclinic phase in HZO, and the TiN/HZO/Pt capacitor exhibits wake-up free nature and a $2P_\mathrm{r}$ value of 27.4 $\mu\mathrm{C/cm^2}$. On the other hand, heating from the $\mathrm{TiN/HfO_2}$ side, or using $\mathrm{500^oC}$ annealing temperature, both yield ferroelectric devices that require a wake-up process. The special configuration of $\mathrm{Pt/ZrO_2}$ is verified by comparative studies with several other superlattice structures and HZO solid-state solutions. It is discovered that heating from the $\mathrm{Pt/HfO_2}$ side at $\mathrm{600^oC}$ leads to high leakage current and a memristor behavior. The mechanisms of ferroelectric phase stabilization and memristor formation have been discussed. The unidirectional heating method can also be useful for other hafnia-based ferroelectric devices., Comment: 16 pages, 7 figures

Published
2022

3. Ferroelectricity in $\mathrm{HfO_2}$ from a chemical perspective

Author

Yuan, Jun-Hui, Mao, Ge-Qi, Xue, Kan-Hao, Bai, Na, Wang, Chengxu, Cheng, Yan, Lyu, Hangbing, Sun, Huajun, Wang, Xingsheng, and Miao, Xiangshui

Subjects
Condensed Matter - Materials Science
Abstract

Ferroelectricity observed in thin film $\mathrm{HfO_2}$, either doped with Si, Al, etc. or in the $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining the origin of such ferroelectricity. In this work, we propose that the 7 cation coordination number of $\mathrm{HfO_2/ZrO_2}$ lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with non-centrosymmetric nature, e.g., $mm2$ point group, $\mathrm{HfO_2}$ and $\mathrm{ZrO_2}$ are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including $\mathrm{SrI_2}$, TaON, YSBr and YOF are also studied in comparison to $\mathrm{HfO_2}$/$\mathrm{ZrO_2}$, and six switching paths are analyzed in detail for the $Pca2_1$ phase. A rule of preferred switching path in terms of ionic radii ratio and coordination number has been established. We also show the possible route from ferroelectric $Pca2_1$ phase to monoclinic $P2_1/c$ phase in $\mathrm{HfO_2}$, which is relevant to the fatigue phenomenon., Comment: 14 pages, 4 figures

Published
2022

21. A 14T radiation hardened SRAM for space applications with high reliability.

Author

Bai, Na, Qin, Zhangyi, Li, Li, Xu, Yaohua, and Wang, Yi

Subjects
*STATIC random access memory, *SOFT errors, *RADIATION, *REDUNDANCY in engineering
Abstract

Summary: Static Random Access Memory (SRAM) is vital in aerospace applications, but it may experience soft errors in strong radiation environments. This paper proposes a reconfigurable radiation SRAM with two operating modes catering to different environmental requirements: (1) traditional triple modular redundancy mode used when the radiation environment is strong and (2) SRAM cell expansion mode used when the radiation is not very strong. For example, when the memory capacity of a single module is 8 k, the memory capacity is 8 k in traditional triple modular redundancy mode, but it can be tripled to 24 K in extended mode. As can be obviously seen, this design can adjust the size according to the needs. In SRAM cell expansion mode, the proposed 14T SRAM cell enables the memory to maintain radiation resistance. Compared with DICE, RHBD‐12T, and WHIT, the read speed is improved by 3.8%, 5.7%, and 11.5% respectively, but compared with WE‐QUATRO, the read speed is reduced by 1.9%. The hold static noise margin is 1.378 times than DICE, 1.201 times than WE‐QUATRO, 1.045 times than RHBD‐12T, and 1.14 times than WHIT, respectively. The proposed 14T cell in this paper exhibits the highest critical charge value compared with the other cells. Combined with the expansion mode of the reconfiguration design, it shows great stability. [ABSTRACT FROM AUTHOR]

Published
2024
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26. Unrevealing the therapeutic benefits of radiotherapy and consolidation immunotherapy using ctDNA-defined tumor clonality in unresectable locally advanced non-small cell lung cancer

Author

Yang, Yufan, primary, Wang, Jianyang, additional, Wang, Jingbo, additional, Zhao, Xiaotian, additional, Zhang, Tao, additional, Yang, Yin, additional, Pang, Jiaohui, additional, Ou, Qiuxiang, additional, Wu, Linfang, additional, Xu, Xin, additional, Xu, Kunpeng, additional, Zhao, Jingjing, additional, Bai, Na, additional, Yang, Peng, additional, Wang, Sha, additional, Wang, Luhua, additional, and Bi, Nan, additional

Published
2023
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37. Design of Novel and Low Cost Triple-node Upset Self-recoverable Latch.

Author

BAI Na, MING Tianbo, XU Yaohua, WANG Yi, LI Yunfei, and LI Li

Subjects
SOFT errors, SEMICONDUCTOR technology, TRANSISTORS, COST
Abstract

With the development of semiconductor technology, the size of transistors continues to shrink. In complex radiation environments in aerospace and other fields, small-sized circuits are more prone to soft error (SE). Currently, single-node upset (SNU), double-node upset (DNU) and triple-node upset (TNU) caused by SE are relatively common. TNU’s solution is not yet fully mature. A novel and low-cost TNU self-recoverable latch (named NLCTNURL) was designed which is resistant to harsh radiation effects. When analyzing circuit resiliency, a double-exponential current source is used to simulate the flipping behavior of a node’s stored value when an error occurs. Simulation results show that the latch has full TNU self-recovery. A comparative analysis was conducted on seven latches related to TNU. Besides, a comprehensive index combining delay, power, area and self-recovery—DPAN index was proposed, and all eight types of latches from the perspectives of delay, power, area, and DPAN index were analyzed and compared. The simulation results show that compared with the latches LCTNURL and TNURL which can also achieve TNU self-recoverable, NLCTNURL is reduced by 68.23% and 57.46% respectively from the perspective of delay. From the perspective of power, NLCTNURL is reduced by 72.84% and 74.19%, respectively. From the area perspective, NLCTNURL is reduced by about 28.57% and 53.13%, respectively. From the DPAN index perspective, NLCTNURL is reduced by about 93.12% and 97.31%. The simulation results show that the delay and power stability of the circuit are very high no matter in different temperatures or operating voltages. [ABSTRACT FROM AUTHOR]

Published
2023
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