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40. Preparation and characterization of Cd.sub.x Zn.sub.1- .sub.x S thin films by spray pyrolysis technique for photovoltaic applications

Author

Raviprakash, Y., Bangera, Kasturi V., and Shivakumar, G.K.

Subjects
Pyrolysis -- Methods, Pyrolysis -- Chemical properties, Solar energy industry -- Methods, Solar energy industry -- Chemical properties, Dielectric films -- Methods, Dielectric films -- Chemical properties, Thin films -- Methods, Thin films -- Chemical properties, Earth sciences, Petroleum, energy and mining industries
Abstract

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.solener.2009.06.004 Byline: Y. Raviprakash, Kasturi V. Bangera, G.K. Shivakumar Keywords: Semiconductor thin films; Spray pyrolysis; XRD; SEM; EDAX; UV-VIS spectrophotometer Abstract: Cd.sub.x Zn.sub.(1- .sub.x .sub.)S (x =0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. In the entire compositions, the (002) diffraction peak is prominent which gives lattice matching to the chalcogenide semiconductor such as CuIn.sub.x Ga.sub.1- .sub.x Se.sub.2 and CuIn (s.sub.1- .sub.x Se.sub.x).sub.2, which are used in photovoltaic devices. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415nm and 0.625 to 0.675nm, respectively. The band gap of the thin films varied from 3.32 to 2.41eV as composition varied from x =0.0 to 1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. Author Affiliation: Thin Film Laboratory, Department of Physics, National Institute of Technology, Surathkal 575 025, Karnataka, India Article History: Received 19 February 2009; Revised 19 May 2009; Accepted 3 June 2009 Article Note: (miscellaneous) Communicated by: Associate Editor Takhir Razykov

Published
2009

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