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22 results on '"Baristiran Kaynak, Canan"'

1. Immature cancer cell discrimination using combined high frequency Electromagnetic Fields and dielectrophoresis forces

Author

Dalmay, Claire, Manczak, Rémi, Saada, Sofiane, Provent, Thomas, Bessette, Barbara, Lalloué, Fabrice, Casciati, Arianna, Tanori, Mirella, Merla, Caterina, Mancuso, Mariateresa, Porcù, Elena, Rampazzo, Elena, Persano, Luca, Viola, Giampetro, Baristiran Kaynak, Canan, Kaynak, Mehmet, Palego, Cristiano, Pothier, Arnaud, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Contrôle de l’Activation Cellulaire, Progression Tumorale et Résistance thérapeutique (CAPTuR), Institut Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST), Université de Limoges (UNILIM)-Université de Limoges (UNILIM), Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Agenzia Nazionale per le nuove Tecnologie, l’energia e lo sviluppo economico sostenibile (ENEA), Universita degli Studi di Padova, Innovations for High Performance Microelectronics (IHP), and Bangor University

Subjects
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

2. SUMCASTEC_191001_NA_2019_EUMC_Conference _Paper_pdf_Limoges_A.Pothier_Public_NA

Author

Babay Meissa, Dalmay Claire, Barelaud Bruno, Durmaz Emre Can, Baristiran Kaynak Canan, Kaynak Mehmet, Cordeau David, and Pothier Arnaud

Subjects
RF Biosensor, BiCMOS Chip, Biological Cell Dielectric Characterization, Injection Locked Oscillators
Abstract

Paper entitled "Design and Implementation of Injection Locked Oscillator Biosensors" for the 49nd European Microwave Conference (EuMC),Paris, 1-3 October 2019 , Paris, France.

Published
2019

6. UHF-Dielectrophoresis Crossover Frequency as a New Marker for Discrimination of Glioblastoma Undifferentiated Cells

Author

Manczak, Remi, primary, Baristiran Kaynak, Canan, additional, Kaynak, Mehmet, additional, Palego, Cristiano, additional, Lalloue, Fabrice, additional, Pothier, Arnaud, additional, Saada, Sofiane, additional, Provent, Thomas, additional, Dalmay, Claire, additional, Bessette, Barbara, additional, Begaud, Gaelle, additional, Battu, Serge, additional, Blondy, Pierre, additional, and Jauberteau, Marie-Odile, additional

Published
2019
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7. Lab-On-A -Chip For Cellular Analysis By Dielectric Spectroscopy Based On Injection Locked Oscillators

Author

Babay, Meissa, Dalmay, Claire, Barelaud, Bruno, Dumaz, Emre Can, Baristiran Kaynak, Canan, Kaynak, Mehmet, Cordeau, David, Pothier, Arnaud, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Systèmes RF (XLIM-SRF), Innovations for High Performance Microelectronics (IHP), Université de Poitiers, and pothier, arnaud

Subjects
[SPI]Engineering Sciences [physics], [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SDV.CAN] Life Sciences [q-bio]/Cancer, [SPI] Engineering Sciences [physics], [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, [SDV.CAN]Life Sciences [q-bio]/Cancer, [SDV.BC]Life Sciences [q-bio]/Cellular Biology, [SDV.BC] Life Sciences [q-bio]/Cellular Biology, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

8. Potentialités d’architectures de biocapteurs basées sur des oscillateurs hyperfréquences verrouillés par injection

Author

Babay, Meissa, Dalmay, Claire, Dumaz, Emre Can, Baristiran Kaynak, Canan, Kaynak, Mehmet, Cordeau, David, Pothier, Arnaud, pothier, arnaud, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Innovations for High Performance Microelectronics (IHP), Université de Poitiers, and Systèmes RF (XLIM-SRF)

Subjects
[SPI]Engineering Sciences [physics], [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SDV.CAN] Life Sciences [q-bio]/Cancer, [SPI] Engineering Sciences [physics], [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, [SDV.CAN]Life Sciences [q-bio]/Cancer, [SDV.BC]Life Sciences [q-bio]/Cellular Biology, [SDV.BC] Life Sciences [q-bio]/Cellular Biology, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

9. SUMCASTEC_181003_NA_EMF-Med 2018 Pres_Conference presentation_.pdf_Limoges_A.Pothier_Public_NA

Author

Manczak, Rémi, Saada, Sofiane, Tanori, Mirella, Casciati, Arianna, Dalmay, Claire, Bessette, Barbara, Begaud, Gaelle, Battu, Serge, Blondy, Pierre, Jauberteau, Marie Odile, Baristiran Kaynak, Canan, Kaynak, Mehmet, Palego, Cristiano, Merla, Caterina, Tanno, Barbara, Mancuso, Mariateresa, Lalloue, Fabrice, and Pothier, Arnaud

Subjects
DEP discrimination, differentiated vs undifferentiated, medulloblastoma cells
Abstract

Presentation of conference paper entitled "High-Frequency Dielectrophoresis Characterizationof Differentiated vs UndifferentiatedMedulloblastoma Cells" at the 1st EMF-Med World Conference on Biomedical Applications of Electromagnetic Fields. Split, Croatia. Presented by Dr A. Pothier on10thSeptember 2018.

Published
2018
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11. The Effect of Surface Optimization on Post-grinding Yield of 200 mm Wafer Level Packaging Applications

Author

Inac, Mesut, primary, Wietstruck, Matthias, additional, Goritz, Alexander, additional, Cetindogan, Barbaros, additional, Baristiran-Kaynak, Canan, additional, Lisker, Marco, additional, Kruger, Andreas, additional, Saarow, Ulrike, additional, Heinrich, Patric, additional, Voss, Thomas, additional, Altin, Kasim, additional, and Kaynak, Mehmet, additional

Published
2018
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12. (Invited) Si1-xGex/Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology

Author

Baristiran Kaynak, Canan, primary, Yamamoto, Yuji, additional, Göritz, Alexander, additional, Korndoerfer, Falk, additional, Zaumseil, Peter, additional, Kulse, Philipp, additional, Schulz, Katrin, additional, Fraschke, Mirko, additional, Marschmeyer, Steffen, additional, Wolansky, Dirk, additional, Wietstruck, Matthias, additional, Shafique, Atia, additional, Gurbuz, Yasar, additional, and Kaynak, Mehmet, additional

Published
2018
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13. Pixel resistance optimization of a Si0.5Ge0.5/Si MQWs thermistor based on in-situ B doping for microbolometer applications

Author

Yamamoto, Yuji, primary, Goritz, Alexander, primary, Korndoerfer, Falk, primary, Zaumseil, Peter, primary, Kulse, Philipp, primary, Schulz, Katrin, primary, Wietstruck, Matthias, primary, Shafique, Atia, primary, Gurbuz, Yasar, primary, Kaynak, Mehmet, primary, Baristiran Kaynak, Canan, primary, and Costina, Ioan, primary

Published
2018
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15. BiCMOS Integrated Microfluidic Packaging by Wafer Bonding for Lab-on-Chip Applications

Author

Inac, Mesut, primary, Wietstruck, Matthias, additional, Goritz, Alexander, additional, Cetindogan, Barbaros, additional, Baristiran-Kaynak, Canan, additional, Marschmeyer, Steffen, additional, Fraschke, Mirko, additional, Voss, Thomas, additional, Mai, Andreas, additional, Palego, Cristiano, additional, Pothier, Arnaud, additional, and Kaynak, Mehmet, additional

Published
2017
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16. Comprehensive Predictive Device Modeling and Analysis of a Si/Si1-xGex Multiquantum-Well Detector.

Author

Shafique, Atia, Abbasi, Shahbaz, Ceylan, Omer, Yamamoto, Yuji, Baristiran Kaynak, Canan, Kaynak, Mehmet, and Gurbuz, Yasar

Subjects
ELECTRICAL engineering, DOPING agents (Chemistry), THERMIONIC emission, TEMPERATURE coefficient of electric resistance, ELECTRONIC equipment
Abstract

This paper presents a predictive device model implemented by a self-consistent solution of Poisson–Schrödinger drift-diffusion formulation for a thermally sensitive detector based on a ${\mathrm {Si/Si}}_{{1}-{x}}{\mathrm {Ge}}_{{x}}$ multiquantum-well structure. The physical phenomena governing the carrier transport were modeled to investigate the effect of physical design aspects (Ge content, well periodicity, and well thickness). In particular, we have analyzed the effect of these physical design parameters on the carrier dynamics quantified by the dc performance in terms of net current density. A fully integrated simulation framework was developed and employed to optimize Ge content and device doping for a desired figure of merits specified by temperature coefficient of resistance (TCR) and dc resistance (${R}$). This methodology was successfully utilized to realize device profiles for various amounts of Ge content and optimization of (${R}$) geared for both high TCR and low noise. The dc performance metrics of the optimized profiles obtained by modeling presented here are compared and validated with the fabricated test devices. [ABSTRACT FROM AUTHOR]

Published
2018
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17. Charakterisierung von Perowskit-ähnlichen, high-k dielektrischen Materialien für Metall-Isolator-Metall Kondensatoren

Author

Baristiran Kaynak, Canan, Tillack, Bernd, and Technische Universität Berlin, Fakultät IV - Elektrotechnik und Informatik

Subjects
ddc:620
Abstract

MIM-Kondensatoren sind eine wichtige Schlüsselkomponente in integrierten Analog/ Mixed-Signal Hochfrequenz-Schaltkreisen. Entsprechend der International Technology Roadmap for Semiconductors sollen MIM-Kondensatoren für zukünftige Hochfrequenzanwendungen hohe Kapazitätsdichten bei geringen Leckstromdichten, geringe Spannungsabhängigkeiten sowie hohe Gütefaktoren aufweisen. Aufgrund der begrenzten Kapazitätsdichte und Zuverlässigkeit von SiO2 and Si3N4 erscheint es nicht möglich diesen Anforderungen mit konventionellen Dielektrika gerecht zu werden. Deshalb besteht die zwingende Notwendigkeit konventionelle Dielektrika durch high k Dielektrika zu ersetzen. In dieser Dissertation liegt der Fokus auf der Untersuchung von verschiedenen alternativen Dielektrika unter Verwendung ein- und mehrlagiger Dielektrikumsstrukturen für zukünftige MIM-Kondensator Applikationen. Es werden Einflüsse von nachfolgenden Ausheilungsprozessen und verschiedenen Elektrodenmaterialien auf die Eigenschaften der MIM- Kondensatoren untersucht. Dabei soll speziell die Charakterisierung von MIM-Kondensatoren in Bezug auf physikalischen und elektrischen Eigenschaften Beachtung geschenkt werden. Metal-Insulator-Metal (MIM) capacitors are one of the key building blocks in radio frequency analog/mixed signal integrated circuits. According to International Technology Roadmap for Semiconductors requirements, MIM capacitors should exhibit high capacitance densities accompanied with low leakage current density, small voltage dependency and high quality factor for future applications. However, based on conventional dielectric materials, like SiO2 and Si3N4, it is not possible to meet these requirements mainly due to limited capacitance density values and reliability issues. Therefore, there is urgent need to replace the conventional dielectric material with high dielectric constant materials as this is the most promising solution. In this thesis, the focus is on screening of different alternative dielectric materials using single or multilayer dielectric structures for future MIM capacitor applications. Moreover, influences of post-deposition annealing and electrode materials on MIM capacitor properties are investigated. Special attention is given on the characterization of MIM capacitors in terms of physical and main electrical properties.

Published
2013

18. Dielectric Material Options for Integrated Capacitors

Author

Ruhl, Guenther, primary, Lehnert, Wolfgang, additional, Lukosius, Mindaugas, additional, Wenger, Christian, additional, Baristiran Kaynak, Canan, additional, Blomberg, Tom, additional, Haukka, Suvi, additional, Baumann, Peter K., additional, Besling, Wim, additional, Roest, Aarnoud, additional, Riou, Benoit, additional, Lhostis, Sandrine, additional, Halimaou, Aomar, additional, Roozeboom, Fred, additional, Langereis, Erik, additional, Kessels, W. M. M., additional, Zauner, Andy, additional, and Rushworth, Simon, additional

Published
2014
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21. Atomic Layer Deposition of HfO2Thin Films Employing a Heteroleptic Hafnium Precursor

Author

Xu, Ke, Milanov, Andrian P., Parala, Harish, Wenger, Christian, Baristiran‐Kaynak, Canan, Lakribssi, Kaoutar, Toader, Teodor, Bock, Claudia, Rogalla, Detlef, Becker, Hans‐Werner, Kunze, Ulrich, and Devi, Anjana

Abstract

The application of a heteroleptic hafnium amide‐guanidinate precursor for the deposition of HfO2thin films via a water‐assisted atomic layer deposition (ALD) process is demonstrated for the first time. HfO2films are grown in the temperature range 100–300 °C using the compound [Hf(NMe2)2(NMe2‐Guan)2] (1). This compound shows self‐limiting ALD‐type growth characteristics with growth rates of the order of 1.0–1.2 Å per cycle in the temperature range 100–225 °C. The saturation behavior and a linear dependence on film thickness as a function of number of cycles are verified at various temperatures within the ALD window. The as‐deposited HfO2films are characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), Rutherford backscattering spectroscopy (RBS), X‐ray photoelectron spectroscopy (XPS), and electrical measurements. For a direct comparison of the precursor performance with that of the parent alkyl amide [Hf(NMe2)4] (2), ALD experiments are also performed employing compound 2under similar process conditions, and in this case no typical ALD characteristics are observed.

Published
2012
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22. Alternative High-k Dielectrics for Metal-Insulator-Metal Applications

Author

Lukosius, Mindaugas, Baristiran Kaynak, Canan, Wenger, Christian, and Rushworth, Simon

Abstract

Atomic Vapor Deposition (AVD) technique was successfully applied for the depositions of amorphous HfO2, Sr-Ta-O and Ti-Ta-O thin films, which were investigated as alternative dielectrics to replace the standard SiO2 or Si3N4 dielectrics used in Metal-Insulator-Insulator (MIM) capacitors. Metal oxides were grown on 200 mm TiN/Si (100) substrates within the thermal budget of back-end-of-line (BEOL) process. Electrical properties, investigated after sputtering Au top electrodes, revealed that the main characteristics are different for each dielectric. On one hand, Ti-Ta-O based MIM capacitors possessed a dielectric constant of 50, which is more than a factor of 2 higher compared to the ones of Sr-Ta-O (20) and HfO2 (18). On the other hand, Sr-Ta-O based MIM capacitors showed the lowest leakage current densities as well as the smallest capacitance-voltage linearity coefficients.

Published
2010
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