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9. MATHEMATICAL MODEL OF A CASCADE SEPARATOR WITH TWO OR SEVERAL INITIAL MATERIAL INPUTS TO THE APPARATUS.

10. AlGaN/GaN HEMTs--operation in the K-band and above

12. MATHEMATICAL MODEL OF SYMMETRICAL DUPLEX CASCADE WITH INITIAL MATERIAL FEED TO AN ODD STAGE.

15. Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

19. 160-190 GHz Monolithic Low Noise Amplifiers

21. An InP HEMT MMIC LNA with 7.2 dB Gain at 190 GHz

22. InP HEMT MMICs for Radiometer Applications

23. 155 GHz MMIC LNAs with 12 dB gain fabricated using a high yield InP HEMT MMIC process

24. STATISTICAL IDENTITY FOR VERTICAL TWO-PHASE FLOWS.

27. Temperature-Dependent Small-Signal and Noise Parameter Measurements and Modeling on InP HEMTs

29. MASS TRANSFER IN THE PROCESSES OF CASCADE SEPARATION OF BULK MATERIALS.

34. Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

35. A1GaN/GaN HEMT High-Poeer and Low-Noise Performance at f>20 GHz

36. 0.1 µm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

37. Manufacturable tri-stack AlSb/INAS HEMT low-noise amplifiers using wafer-level-packaging technology for light-weight and ultralow-power applications

38. Transistor Level Integration of InP HBT and Si CMOS

40. The effect of gate metals on manufacturability of 0.1 μm metamorphic AlSb/InAs HEMTs for ultralow-power applications

41. InAs/InGaAs composite-channel HEMT on InP: Tailoring InGaAs thickness for performance

42. MMIC low-noise amplifiers and applications above 100 GHz

45. 0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications

47. 35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz

49. 35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications

50. High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

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