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In the past decade, chiral materials have drawn significant attention because it is widely claimed that they can act as spin injectors/detectors due to the chirality-induced spin selectivity (CISS) effect. Nevertheless, the microscopic origin of this effect is not understood, and there is an intensive discussion about the manifestation of the magnetoresistance that is generated between a chiral system and a ferromagnet. Hanle spin precession measurements can unambiguously prove the injection and detection of a spin accumulation in a non-magnetic material, as was shown with traditional ferromagnetic injectors/detectors. Here, we analyze in detail the Hanle spin precession induced magnetoresistance and find that it is inverted as compared to the ferromagnetic case. We explicitly model the spin injection and detection by both a chiral system and a ferromagnetic system, as well as the spin transport in a semiconductor, for a general set of (spin) transport parameters that cover the relevant experimental regime. For all sets of parameters, we find that the Hanle signals for a chiral system and ferromagnet are each others opposites.

Magnon based spintronic devices require the modulation of magnon spin transport for their operations. We provide a proof-of-principle of two unconventional non-local magnon transport devices in which we modulate the diffusive magnon transport of incoherent magnons in the van der Waals antiferromagnet Chromium thiophosphate, CrPS4. The non-local signals generated electrically by spin injection via the spin Hall effect (SHE) and thermally via the spin Seebeck effect (SSE) are altered by a modulator electrode. The current through the modulator increases or decreases the magnon chemical potential via the SHE and changes the magnon temperature through Joule heating. We achieve up to 25%/mA and 16%/mA modulation efficiencies for the electrically and thermally generated magnon spin transport, respectively, for CrPS4 in the collinear state at in plane fields >7T at a temperature of 25K.

We investigate the injection, transport and detection of magnon spins in the van der Waals antiferromagnet chromium thiophosphate (CrPS4). We electrically and thermally inject magnon spins by platinum contacts and examine the non-local resistance as a function of in-plane magnetic field up to 12 Tesla. We observe a large non-local resistance from both the electrically and thermally excited magnon modes above the spin-flip field where CrPS4 is in the collinear state. At 25 K for an in-plane field of ranging 5 - 12 T, we extract the magnon relaxation length ranging $200-800$ nm and a typical magnon conductivity of 1e4 Sm-1, which is one order of magnitude smaller than in yttrium iron garnet (YIG) films at room temperature. Moreover, we find that the magnon conductivity is almost zero for CrPS4 in the non-collinear state. Our results open up the way to understanding the role of the antiferromagnetic magnon modes on spin injection into antiferromagnets and implementation of two-dimensional magnets for scalable magnonic circuits., Comment: 7 pages, 5 figures

The switching and optical properties of phase-change thin films are actively investigated for future smart optical devices. The possibility of having more than one stable state, the large optical contrast between phases, and the fast and reversible switching are some attractive properties driving the research interest. Optical devices based on phase change alloys are considered the frontier contenders for tunable photonics. The combination of vivid structural color formation, with partial amorphization/crystallization of phase change alloys, and the associated optical tunability could be integrated into an energy-efficient reflective display device with high pixel density. This work demonstrates a contrast formation due to relative height differences from isolated pixelated structures. A reflective heterostructure device consisting of a low-loss Sb2Se3 alloy on a gold substrate was produced. With a focused ion beam, a pixelated metasurface structure was produced. Moreover, the ability to create local height differences using an ion beam was employed to create a structural color combination mimicking traditional LED like RGB pixels. We believe our approach in creating metapixels on phase change thin film surfaces could open up research interest in phase change alloys and moving away from semi/static plasmonic systems into truly dynamic display devices.

The non-linear and tunable optical constants of phase-change materials associated with their phase-switching have been utilized in reconfigurable optical devices. For example, one possible application of phase-change thin films is for tunable perfect absorption designs, where p- polarized light reflectance vanishes at a specific incidence angle known as the Brewster angle. This work demonstrates a generalized Brewster effect (s- and p- polarized light absorption) for a multilayered heterostructure design based on the strong interference effect. The proposed design comprises a low-loss phase-change material, Sb2Se3, coated on a gold substrate. We experimentally and theoretically show the coexistence of vanishing reflectance values for both s- and p- polarized lights in the visible and near IR wavelength range at a single Brewster angle. Such vanishing reflectance values (points of darkness) are associated with phase singularities with abrupt changes. Moreover, we show that additional phase singularities can be realized by switching the active Sb2Se3 layer between amorphous and crystalline structures, extending the functionality of our design. The realized phase singularities are susceptible to small optical constant changes and can be utilized for ultra-sensing applications. As a proof of concept, we demonstrate our design's CO2 gas sensing capabilities, showing a linearly dependent optical response with gas flow rate. We believe our lithography-free design with multiple phase singularities, from the coexisting generalized Brewster effect and from the additional structural switching, is highly promising for tunable optical sensing applications.

Significant attention has been drawn to electronic transport in chiral materials coupled to ferromagnets in the chirality induced spin selectivity (CISS) effect. A large magnetoresistance (MR) is usually observed which is widely interpreted to originate from spin (dependent) transport. However, there are severe discrepancies between the experimental results and theoretical interpretations, most notably the apparent failure of the Onsager reciprocity relation in the linear response regime. We provide an alternative explanation for the mechanism of the two terminal MR in chiral systems coupled to a ferromagnet. For this we point out that it was observed that the electrostatic contact potential of chiral materials on a ferromagnet depends on the magnetization direction and chirality. In our explanation this causes the transport barrier to be modified by the magnetization direction, already in equilibrium, in the absence of a bias current. This strongly alters the charge transport through/over the barrier, not requiring spin transport. This provides a mechanism that allows the linear response resistance to be sensitive to the magnetization direction and also explains the failure of the Onsager reciprocity relations. We propose experimental configurations to confirm our alternative mechanism for MR.

The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 to 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from -50 % to +69 % in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.

Quality of the electrical contacts and interfaces in various metal/semiconductor/insulator heterostructures is one of the pivotal aspects in both applied and fundamental research areas. For instance, non-optimal contact resistance can limit the overall efficiency of a certain developed technology and thus considerably narrow the range or fully block its practical application. On the other hand in fundamental research it is often the case that the manifestation of targeted phenomenon crucially depends on the level of contamination in the fabricated experimental samples. Here we offer a set of recipes that are aimed at contamination-free and damage-free fabrication of the devices, mostly developed for the two dimensional materials, but nevertheless applicable for a wider range of the systems, where the quality of the interfaces and/or non-invasiveness of the fabrication recipes are important. Our recipes are based on the preparation of the flexible PMMA membranes, with the help of which we can prepare residue-free or damage-free electrical connections to the studied material.

The recently reported Bilinear Magnetoeletric Resistance (BMR) in novel materials with rich spin textures, such as bismuth selenide (Bi$_2$Se$_3$) and tungsten ditelluride (WTe$_2$), opens new possibilities for probing the spin textures via magneto-transport measurements. By its nature, the BMR effect is directly linked to the crystal symmetry of the materials and its spin texture. Therefore, understanding the crystallographic dependency of the effect is crucial. Here we report the observation of crystallographic-dependent BMR in thin WTe$_2$ layers and explore how it is linked to its spin textures. The linear response measured in first harmonic signals and the BMR measured in second harmonic signals are both studied under a wide range of magnitudes and directions of magnetic field, applied current and at different temperatures. We discover a three-fold symmetry contribution of the BMR when current is applied along the a-axis of the WTe$_2$ thin layer at 10 K, which is absent for when current is applied along the b-axis.

Previous studies have used prescriptive process monitoring to find actionable policies in business processes and conducted case studies in similar domains, such as the loan application process and the traffic fine process. However, care processes tend to be more dynamic and complex. For example, at any stage of a care process, a multitude of actions is possible. In this paper, we follow the reinforcement approach and train a Markov decision process using event data from a care process. The goal was to find optimal policies for staff members when clients are displaying any type of aggressive behavior. We used the reinforcement learning algorithms Q-learning and SARSA to find optimal policies. Results showed that the policies derived from these algorithms are similar to the most frequent actions currently used but provide the staff members with a few more options in certain situations.

Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real space atomic structure analysis in which also the oxygen atomic columns are resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of the strain-stabilized intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) utilizing atomic-resolution electron microscopy. Our approach sets a direct pathway to unravel the structural transitions in wide range of correlated oxides, offering substantial implications for e.g. optoelectronics and ferroelectrics., Comment: 17 pages, 4 figures

Hydrogen is a promising energy carrier that can push forward the energy transition because of its high energy density (142 MJ kg-1), variety of potential sources, low weight and low environmental impact, but its storage for automotive applications remains a formidable challenge. MgH2, with its high gravimetric and volumetric density, presents a compelling platform for hydrogen storage; however, its utilization is hindered by the sluggish kinetics of hydrogen uptake/release and high temperature operation. Herein we show that a novel layered heterostructure of reduced graphene oxide and organosilica with high specific surface area and narrow pore size distribution can serve as a scaffold to host MgH2 nanoparticles with a narrow diameter distribution around ~2.5 nm and superior hydrogen storage properties to bulk MgH2. Desorption studies showed that hydrogen release starts at 50 {\deg}C, with a maximum at 348 {\deg}C and kinetics dependent on particle size. Reversibility tests demonstrated that the dehydrogenation kinetics and re-hydrogenation capacity of the system remains stable at 1.62 wt.% over four cycles at 200 {\deg}C. Our results prove that MgH2 confinement in a nanoporous scaffold is an efficient way to constrain the size of the hydride particles, avoid aggregation and improve kinetics for hydrogen release and recharging.

Due to their high energy density (2600 Wh/kg), low cost, and low environmental impact, lithium-sulfur batteries are considered a promising alternative to lithium-ion batteries. However, their commercial viability remains a formidable scientific challenge mainly because of the sluggish reaction kinetics at the cathode and the so-called "shuttling effect" of soluble polysulfides, which results in capacity decay and a shortened lifespan. Herein, molecular imprinting with Li$_2$S$_8$ as a target molecule in combination with a two-dimensional material, MXene, is proposed to overcome these issues. Molecularly imprinted polymer-coated nitrogen-doped Ti-based MXene was successfully synthesized and demonstrated to exhibit an appealing electrochemical performance, namely a high specific capacity of 1095 mAh/g at 0.1 C and an extended cycling stability (300 mAh/g at 1.0 C after 300 cycles). X-ray photoelectron spectroscopy was applied to elucidate the underlying mechanisms and proved that Li$_2$S$_8$-imprinted polymer polyacrylamide serves as a polysulfide trap through strong chemical affinity towards the long-chain lithium polysulfides, while N-doped Ti-based MXene promotes the redox kinetics by accelerating the conversion of lithium polysulfides. This distinct interfacial strategy is expected to result in more effective and stable Li-S batteries.

Confining magnons in cavities can introduce new functionalities to magnonic devices, enabling future magnonic structures to emulate established photonic and electronic components. As a proof-of-concept, we report magnon confinement in a lithographically defined all-on-chip YIG cavity created between two YIG/Permalloy bilayers. We take advantage of the modified magnetic properties of covered/uncovered YIG film to define on-chip distinct regions with boundaries capable of confining magnons. We confirm this by measuring multiple spin pumping voltage peaks in a 400 nm wide platinum strip placed along the center of the cavity. These peaks coincide with multiple spin-wave resonance modes calculated for a YIG slab with the corresponding geometry. The fabrication of micrometer-sized YIG cavities following this technique represents a new approach to control coherent magnons, while the spin pumping voltage in a nanometer-sized Pt strip demonstrates to be a non-invasive local detector of the magnon resonance intensity., Comment: 30 pages, 12 figures

The metal-insulator transition (MIT) observed in vanadium dioxide (VO2) has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behaviour is of vital importance from the perspective of both underlying fundamental science as well as potential applications. In this work, we use scanning transmission electron microscopy (STEM) to investigate cross-section lamella of the VO2 films deposited using pulsed laser deposition (PLD) on three substrates: c-cut sapphire, TiO2(101) and TiO2(001). Advanced STEM imaging is performed in which also the oxygen atom columns are resolved. We link the overall film quality and structures on atomic and nanoscale to the electrical transition characteristics. We observe poor MIT characteristics on c-sapphire due to the presence of very small domains with six orientation variants, and on TiO2 (001) due to the presence of cracks induced by stress relaxation. However, the MIT on TiO2 (101) behaves favourably, despite similar stress relaxation which, however, only lead to domain boundaries but no cracks.

Monatomic antimony thin films have recently attracted attention for applications in phase change memory, nanophotonics, and 2D materials. Although some promising results have been reported, the true potential of Sb thin films is still hindered by the scalability issue and the lack of reliable bottom-up production. Here we demonstrate the growth of Sb thin films on a lattice-matching and amorphous substrates using pulsed laser deposition (PLD). C-axis out-of-plane textured Sb thin films were successfully deposited on Sb$_2$Te$_3$ and SiO$_2$\Si$_3$N$_4$ substrates. In the case of growth on Sb$_2$Te$_3$, we show that an intermediate phase is formed at the Sb$_2$Te$_3$-Sb interface playing a crucial role in forming a solid coupling and thus maintaining epitaxy leading to the production of high-quality Sb thin films. A 3 - 4 nm amorphous Sb seed layer was used to induce texture and suitable surface termination for the growth of Sb thin films on amorphous substrates. The deposition parameters were fine-tuned, and the growth was monitored in situ by a Reflective High Energy Electron Diffraction (RHEED). Scanning/Transmission Electron Microscopy (S/TEM) unveiled the local structure of produced films showing the formation of $\beta$-phase Sb thin films. Our results demonstrate the feasibility to produce very smooth high-quality antimony thin films with uniform coverage, from few layers to large thicknesses, using pulsed laser deposition. We believe the results of our work on scalable and controllable Sb growth have the potential to open up research on phase-change materials and optoelectronics research., Comment: Van der Waals epitaxy, Monatomic antimony thin films, Antimonene, Phase change materials, Pulsed laser deposition, 2D materials, Transmission electron microscopy

In the past few years, phase-change materials have become increasingly important in nano-photonics and optoelectronics. The advantages of sizeable optical contrast between phases and the additional degree of freedom from phase switching have been the driving force. From multilevel reflectance to dynamic nanoprinting and structural colors, phase-change materials have achieved outstanding results with prospects for real-world applications. The local crystallization/amorphization of phase-change materials and the corresponding reflectance tunning by the crystallized/amorphized region size have potential applications for future dynamic display devices. Although the resolution is much higher than current display devices, the pixel sizes in those devices are limited by the locally switchable structure size. Here, we reduce the spot sizes further by using ion beams instead of laser beams and dramatically increase the pixel density, demonstrating the capability of having superior resolution. In addition, the power to sputter away materials can be utilized in creating nanostructures with relative height differences and local contrast. Our experiment focuses on one archetypal phase-change material, Sb$_2$Se$_3$, prepared by pulsed-laser deposition on a reflective gold substrate. We demonstrate that we can produce structural colors and achieve reflectance tunning by focused ion beam milling/sputtering of phase change materials at the nanoscale. Furthermore, we show that the local structuring of phase-change materials by focused ion beam can be used to produce high pixel density display devices with superior resolutions., Comment: nanophotonics, focused ion beam, nanoprinting, pulsed laser deposition, phase change materials

The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments, posing a challenge to their scalability in architecture implementation. Here we present a compelling alternative memristive device and demonstrate that areal downscaling leads to enhancement in memristive memory window, while maintaining analogue behavior, contrary to expectations. Our device designs directly integrated on semiconducting Nb-SrTiO$_3$ allows leveraging electric field effects at edges, increasing the dynamic range in smaller devices. Our findings are substantiated by studying the microscopic nature of switching using scanning transmission electron microscopy, in different resistive states, revealing an interfacial layer whose physical extent is influenced by applied electric fields. The ability of Nb-SrTiO$_3$ memristors to satisfy hardware and software requirements with downscaling, while significantly enhancing memristive functionalities, makes them strong contenders for non-von Neumann computing, beyond CMOS., Comment: main text: 11 pages, 5 figures