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7. Qorvo's Emerging GaN Technologies for mmWave Applications

Author

Cao, Y., primary, Kumar, V., additional, Chen, S., additional, Cui, Y., additional, Yoon, S., additional, Beam, E., additional, Xie, A., additional, Jimenez, J., additional, Ketterson, A., additional, Lee, C., additional, Linkhart, Douglas, additional, and Geiler, Anton, additional

Published
2020
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12. The 2018 GaN power electronics roadmap

Author

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Zhang, Yuhao, Hu, Jie, Palacios, Tomas, Piedra, Daniel, Sun, Min, Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E. M. S., Oliver, Stephen, Plissonnier, M, Reddy, R, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Zhang, Yuhao, Hu, Jie, Palacios, Tomas, Piedra, Daniel, Sun, Min, Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E. M. S., Oliver, Stephen, Plissonnier, M, Reddy, R, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, and Zeltner, Stefan

Abstract

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

Published
2018

13. InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

Author

Broekaert, T. P. E, Tang, S, Wallace, R. M, Beam, E. A., III, Duncan, W. M, Kao, Y. -C, and Liu, H. -Y

Subjects
Solid-State Physics
Abstract

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Published
1995

16. The 2018 GaN power electronics roadmap

Author

Amano, H, primary, Baines, Y, additional, Beam, E, additional, Borga, Matteo, additional, Bouchet, T, additional, Chalker, Paul R, additional, Charles, M, additional, Chen, Kevin J, additional, Chowdhury, Nadim, additional, Chu, Rongming, additional, De Santi, Carlo, additional, De Souza, Maria Merlyne, additional, Decoutere, Stefaan, additional, Di Cioccio, L, additional, Eckardt, Bernd, additional, Egawa, Takashi, additional, Fay, P, additional, Freedsman, Joseph J, additional, Guido, L, additional, Häberlen, Oliver, additional, Haynes, Geoff, additional, Heckel, Thomas, additional, Hemakumara, Dilini, additional, Houston, Peter, additional, Hu, Jie, additional, Hua, Mengyuan, additional, Huang, Qingyun, additional, Huang, Alex, additional, Jiang, Sheng, additional, Kawai, H, additional, Kinzer, Dan, additional, Kuball, Martin, additional, Kumar, Ashwani, additional, Lee, Kean Boon, additional, Li, Xu, additional, Marcon, Denis, additional, März, Martin, additional, McCarthy, R, additional, Meneghesso, Gaudenzio, additional, Meneghini, Matteo, additional, Morvan, E, additional, Nakajima, A, additional, Narayanan, E M S, additional, Oliver, Stephen, additional, Palacios, Tomás, additional, Piedra, Daniel, additional, Plissonnier, M, additional, Reddy, R, additional, Sun, Min, additional, Thayne, Iain, additional, Torres, A, additional, Trivellin, Nicola, additional, Unni, V, additional, Uren, Michael J, additional, Van Hove, Marleen, additional, Wallis, David J, additional, Wang, J, additional, Xie, J, additional, Yagi, S, additional, Yang, Shu, additional, Youtsey, C, additional, Yu, Ruiyang, additional, Zanoni, Enrico, additional, Zeltner, Stefan, additional, and Zhang, Yuhao, additional

Published
2018
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19. Commonality analysis for the NASA Space Station Common Module

Author

Powell, L. E and Beam, E. E

Subjects
Spacecraft Design, Testing And Performance
Abstract

The concept of commonality to enhance cost savings, as applied to NASA's Space Station Common Module (CM), is explored. The equipment to be included in the CM is organized by subsystems of structure, power, thermal, command and data handling, environmental control and life support, and crew station. The weight, volume, and quantity of each instrument item will be subsequently added to support a cost model. The CM concept, its reference configuration, power distribution and management, and cost sensitivity options are discussed in detail. Some computer programs are outlined, stressing the importance of the existing capabilities of the STS and the optimum commonality case.

Published
1985

44. Systematic optical and x-ray study of InGaAs on InP.

Author

Estrera, J., Duncan, W., Kao, Y., Liu, H., and Beam, E.

Abstract

We present a systematic study of InGaAs on InP grown by molecular beam epitaxy using the characterization techniques of Fourier transform photoluminescence, x-ray diffraction, micro-Raman spectroscopy, and photoreflectance spectroscopy. The four techniques were used to determine and correlate the fundamental parameters of band-gap energy, phonon frequency and composition. Comparing room temperature (293 K) PL and low temperature PL indicate the presence of a partially ionized acceptor with binding energy of about 13 meV in the unintentionally doped material. Double crystal x-ray diffraction (XRD) using a symmetric <400> and asymmetric <224> reflections was also employed. The use of two reflections gives precise lattice constants, composition, and extent of film relaxation. Micro-Raman spectroscopy was used to measure phonon frequencies in the InGaAs films and correlated to XRD composition. Room temperature photoreflectance (PR) was used to determine band-gap energy for both the low and intermediate field cases. Band gap energies determined at room temperature by PL and PR were in agreement within experimental error. [ABSTRACT FROM AUTHOR]

Published
1991
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48. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz.

Author

Schuette, M. L., Ketterson, A., Bo Song, Beam, E., Tso-Min Chou, Pilla, M., Hua-Quen Tserng, Xiang Gao, Shiping Guo, Fay, P. J., Xing, H. G., and Saunier, P.

Subjects
MODULATION-doped field-effect transistors, BREAKDOWN voltage, ALUMINUM nitride, GALLIUM nitride, OHMIC contacts
Abstract

We report 1000-transistor-level monolithic circuit integration of sub-30-nm gate-recessed E/D GaN high-electron-mobility transistors with fT and fmax above 300 GHz. Simultaneous fT/fmax of 348/340 and 302/301 GHz for E- and D-mode devices, respectively, was measured, representing a 58% increase in fT compared with our previous report, due to improved management of RC parasitic delay. Three-terminal E- and D-mode breakdown voltage of 10.7 and 11.8 V, respectively, is limited by gate-drain breakdown. [ABSTRACT FROM AUTHOR]

Published
2013
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