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While mutually interacting spin Hall nano-oscillators (SHNOs) hold great promise for wireless communication, neural networks, neuromorphic computing, and Ising machines, the highest number of synchronized SHNOs remains limited to $N$ = 64. Using ultra-narrow 10 and 20-nm nano-constrictions in W-Ta/CoFeB/MgO trilayers, we demonstrate mutually synchronized SHNO networks of up to $N$ = 105,000. The microwave power and quality factor scale as $N$ with new record values of 9 nW and $1.04 \times 10^6$, respectively. An unexpectedly strong array size dependence of the frequency-current tunability is explained by magnon exchange between nano-constrictions and magnon losses at the array edges, further corroborated by micromagnetic simulations and Brillouin light scattering microscopy. Our results represent a significant step towards viable SHNO network applications in wireless communication and unconventional computing., Comment: 15 pages

This chapter reviews the state of the art in mutually synchronized spin-torque and spin Hall nano-oscillator (STNO and SHNO) arrays. After briefly introducing the underlying physics, we discuss different nano-oscillator implementations and their functional properties with respect to frequency range, output power, phase noise, and modulation rates. We then introduce the concepts and the theory of mutual synchronization and discuss the possible coupling mechanisms in spintronic nano-oscillators, such as dipolar, electrical, and spin-wave coupling. We review the experimental literature on mutually synchronized STNOs and SHNOs in one- and two-dimensional arrays and discuss ways to increase the number of mutually synchronized nano-oscillators. Finally, the potential for applications ranging from microwave signal sources/detectors and ultrafast spectrum analyzers to neuromorphic computing elements and Ising machines is discussed together with the specific electronic circuitry that has been designed so far to harness this potential., Comment: Chapter 5 of Book Nanomagnets as Dynamical Systems

Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall conductivity, $\sigma_{\rm xy}=1.35\times10^{5}$ $\Omega^{-1} m^{-1}$ and the anomalous Hall angle, $\theta_{\rm H}=15.8\%$, both comparable to bulk values. We observe a dramatic crystalline orientation dependence of the Gilbert damping constant of a factor of two and a giant intrinsic spin Hall conductivity, $\mathit{\sigma_{\rm SHC}}=(6.08\pm 0.02)\times 10^{5}$ ($\hbar/2e$) $\Omega^{-1} m^{-1}$, an order of magnitude higher than literature values of multilayer Co$_{\rm 2}$MnGa stacks [1-3] and single-layer Ni, Co, Fe [4], and Ni$_{\rm 80}$Fe$_{\rm 20}$~[4,5]. As a consequence, spin-orbit-torque driven auto-oscillations of a 30 nm thick magnetic film are observed for the first time, at an ultralow threshold current density of $J_{th}=6.2\times10^{11}$ $Am^{-2}$. Theoretical calculations of the intrinsic spin Hall conductivity, originating from a strong Berry curvature, corroborate the results and yield values comparable to the experiment. Our results open up for the design of spintronic devices based on single layers of magnetic topological quantum materials., Comment: 19 pages

Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque materials, such as heavy metals and topological insulators, provide only an in-plane spin polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin polarized current components, which is not suitable for energy-efficient spin-orbit torque (SOT) applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using a topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-orbit torque ferromagnetic resonance (STFMR) experiments in a TaIrTe4/Ni80Fe20 heterostructure and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be an order of magnitude higher than the reported values in other materials. These findings of high spin Hall conductivity and large out-of-plane SOT efficiency are suitable for the development of energy efficient and external field-free spintronic devices.

Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, we show that current shunting through the Si substrate is the origin of this problem and study how different seed layers can mitigate it. We find that an ultra-thin Al$_{2}$O$_{3}$ seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 $\mu$A. In addition, the combination of electrical insulation and high thermal conductivity of the Al$_{2}$O$_{3}$ seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. Our state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or two-dimensional arrays., Comment: 10 pages, 6 figures

Mutual synchronization of N serially connected spintronic nano-oscillators increases their coherence by a factor $N$ and their output power by $N^2$. Increasing the number of mutually synchronized nano-oscillators in chains is hence of great importance for better signal quality and also for emerging applications such as oscillator-based neuromorphic computing and Ising machines where larger N can tackle larger problems. Here we fabricate spin Hall nano-oscillator chains of up to 50 serially connected nano-constrictions in W/NiFe, W/CoFeB/MgO, and NiFe/Pt stacks and demonstrate robust and complete mutual synchronization of up to 21 nano-constrictions, reaching linewidths of below 200 kHz and quality factors beyond 79,000, while operating at 10 GHz. We also find a square increase in the peak power with the increasing number of mutually synchronized oscillators, resulting in a factor of 400 higher peak power in long chains compared to individual nano-constrictions. Although chains longer than 21 nano-constrictions also show complete mutual synchronization, it is not as robust and their signal quality does not improve as much as they prefer to break up into partially synchronized states. The low current and low field operation of these oscillators along with their wide frequency tunability (2-28 GHz) with both current and magnetic fields, make them ideal candidates for on-chip GHz-range applications and neuromorphic computing., Comment: 9 Pages, 7 figures

Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine the ultrafast magnetization dynamics of antiferromagnets with a ferromagnet-like spin-orbit-torque (SOT) behavior. However to use ferrimagnets in spintronic devices their advantageous properties must be retained also in ultrathin films (t < 10 nm). In this study, ferrimagnetic Gdx(Fe87.5Co12.5)1-x thin films in the thickness range t = 2-20 nm were grown on high resistance Si(100) substrates and studied using broadband ferromagnetic resonance measurements at room temperature. By tuning their stoichiometry, a nearly compensated behavior is observed in 2 nm Gdx(Fe87.5Co12.5)1-x ultrathin films for the first time, with an effective magnetization of Meff = 0.02 T and a low effective Gilbert damping constant of {\alpha} = 0.0078, comparable to the lowest values reported so far in 30 nm films. These results show great promise for the development of ultrafast and energy efficient ferrimagnetic spintronic devices., Comment: 7 Pages, 4 Figures

We investigate a W-Ta alloying route to reduce the auto-oscillation current densities and the power consumption of nano-constriction based spin Hall nano oscillators. Using spin-torque ferromagnetic resonance (ST-FMR) measurements on microbars of W$_{\text{100-x}}$Ta$_{\text{x}}$(5 nm)/CoFeB(t)/MgO stacks with t = 1.4, 1.8, and 2.0 nm, we measure a substantial improvement in both the spin-orbit torque efficiency and the spin Hall conductivity. We demonstrate a 34\% reduction in threshold auto-oscillation current density, which translates into a 64\% reduction in power consumption as compared to pure W-based SHNOs. Our work demonstrates the promising aspects of W-Ta alloying for the energy-efficient operation of emerging spintronic devices.

A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fields generated by anti-damping torques when an electric current is passed through the non-magnetic layer. We report a giant spin-orbit field of 48.96 (27.50) mT at an applied current density of 1 MAcm-2 in beta-W interfaced Co60Fe40 (Ni81Fe19)/TiN epitaxial structures due to an anti-damping like torque, which results in a magnetization auto-oscillation current density as low as 1.68(3.27) MAcm-2. The spin-orbit field value increases with decrease of beta-W layer thickness, which affirms that epitaxial surface states are responsible for the extraordinary large efficiency. SOT induced energy efficient in-plane magnetization switching in large 20x100 um2 structures has been demonstrated by Kerr microscopy and the findings are supported by results from micromagnetic simulations. The observed giant SOT efficiencies in the studied all-epitaxial heterostructures are comparable to values reported for topological insulators. These results confirm that by utilizing epitaxial material combinations an extraordinary large SOT efficiency can be achieved using semiconducting industry compatible 5d heavy metals, which provides immediate solutions for the realization of energy efficient spin-logic devices., Comment: 22 Pages, 5 Images

A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $\Omega^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of damping-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices., Comment: 11pages,6figures

Spin-orbit torques in ferromagnetic (FM)/non-magnetic (NM) heterostructures offer more energy-efficient means to realize spin-logic devices; however, their strengths are determined by the heterostructure interface. This work examines crystal orientation impact on the spin-orbit torque efficiency in different Fe/Pd bilayer systems. Spin torque ferromagnetic measurements evidence that the damping-like torque efficiency is higher in epitaxial than in polycrystalline bilayer structures while the field-like torque is negligible in all bilayer structures. The strength of the damping-like torque decreases with deterioration of the bilayer epitaxial quality. The present finding provides fresh insight for the enhancement of spin-orbit torques in magnetic heterostructures., Comment: 8 Pages, 4 figures, 1 Table, epitaxial heterostructures for spin-oscillators

The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular momentum transfer across the FM/NM interface; hence, requiring low spin memory loss and high spin-mixing conductance. To highlight this issue, spin pumping and spin-transfer torque ferromagnetic resonance measurements have been performed on Co_2FeAl/\beta-Ta heterostructures tailored with Cu interfacial layers. The interface tailored structure yields an enhancement of the effective spin-mixing conductance. The interface transparency and spin memory loss corrected values of the spin-mixing conductance, spin Hall angle and spin diffusion length are found to be 3.40 \pm 0.01 \times 10^{19} m^{-2}, 0.029 \pm 0.003, and 2.3 \pm 0.5 nm, respectively. Furthermore, a high current modulation of the effective damping of around 2.1 % has been achieved at an applied current density of 1 \times 10^9 A/m^2 , which clearly indicates the potential of using this heterostructure for energy efficient control in spin devices, Comment: 12 Pages, 8 figures, 1 table, Magnetic heterostructures for spin-torque oscillators

We have deposited polycrystalline Re doped $(Fe_{65}Co_{35})_{100-x}Re_{x}$ (0 $\leq$ x $\leq$ 12.6 at\%) thin films grown under identical conditions and sandwiched between thin layers of Ru in order to study the phenomenon of spin pumping as a function of Re concentration. In-plane and out-of-plane ferromagnetic resonance spectroscopy results show an enhancement of the Gilbert damping with an increase in Re doping. We found evidence of an increase in the real part of effective spin mixing conductance [Re($g^{\uparrow\downarrow}_{eff}$)] with the increase in Re doping of 6.6 at\%, while a decrease is evident at higher Re doping. The increase in Re($g^{\uparrow\downarrow}_{eff}$) can be linked to the Re doping induced change of the interface electronic structure in the non-magnetic Ru layer and the effect interfacial spin-orbit coupling has on the effective spin-mixing conductance. The lowest and highest values of Re($g^{\uparrow\downarrow}_{eff}$) are found to be 9.883(02) $nm^{-2}$ and 19.697(02) $nm^{-2}$ for 0 at\% and 6.6 at\% Re doping, respectively. The saturation magnetization decreases with increasing Re doping, from 2.362(13) T for the undoped film to 1.740(03) T for 12.6 at\% Re doping. This study opens a new direction of tuning the spin-mixing conductance in magnetic heterostructures by doping of the ferromagnetic layerr, which is essential for the realization of energy efficient operation of spintronic devices.

The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraordinary values of SHA and therefore ultra-low J_Crit in semiconducting industry compatible epitaxial materials combinations open up a new direction for the realization of energy efficient spin logic devices by utilizing epitaxial interfaces., Comment: 9 Pages, 3 Figures, 1 Table, Thin films heterostructures and devices for spintronic applications

The effects of rhenium doping in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focusing on the change of the saturation magnetization and the Gilbert damping parameter. Both experimental and theoretical results show that the saturation magnetization decreases with increasing Re doping level, while at the same time Gilbert damping parameter increases. The experimental low temperature saturation magnetic induction exhibits a 29 percent decrease, from 2.31 T to 1.64 T, in the investigated doping concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the damping parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the damping, is for the undoped sample 0.0027, which is close to the theoretically calculated Gilbert damping parameter. With 10 atomic percent Re doping, the damping parameter increases to 0.0090, which is in good agreement with the theoretical value of 0.0073. The increase in damping parameter with Re doping is explained by the increase in density of states at Fermi level, mostly contributed by the spin-up channel of Re. Moreover, both experimental and theoretical values for the damping parameter are observed to be weakly decreasing with decreasing temperature., Comment: 13 pages, 8 figures, 5 tables, Materials for spin-logic circuits

The spin pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered Co2FeAl (CFA) /Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data has been analyzed using spin pumping theory in terms of spin current pumped through the ferromagnet /nonmagnetic metal interface to deduce the effective spin mixing conductance and the spin-diffusion length, which are estimated to be 1.16(0.19)x10^19 m^-2 and 3.50(0.35)nm, respectively. The damping constant is found to be 8.4(0.3)x10^-3 in the Mo(3.5nm) capped CFA(8nm) sample corresponding to a ~42% enhancement of the original Gilbert damping (6.0(0.3)x10^-3) in the uncapped CFA layer. This is further confirmed by inserting a Cu dusting layer which reduces the spin transport across the CFA /Mo interface. The Mo layer thickness dependent net spin current density is found to lie in the range of 1-3 MAm^-2, which also provides additional quantitative evidence of spin pumping in this bilayer thin film system., Comment: 26 pages, 6 figures