In this study, we explore the properties of p – Sn1-xEuxTe with a focus on band dispersion and effective mass, utilizing a framework involving the k →. π → model. We calculate these characteristics at a temperature of T=300K, using a simulated energy band gap that depends on the concentration of Europium impurity x. The energy dispersion is found to exhibit a non-parabolic behaviour, following a 4th order polynomial in k. To incorporate various interactions and effects, we derive an equation of motion under the representation of effective mass, considering the presence of spin-orbit interaction, an external magnetic field, and a magnetic impurity. The perturbation approach with k →. π → is used to account for the hybridized exchange interaction between the magnetic impurity and the carrier, as well as that between the external magnetic field and the carrier. Before and after the band inversion points at x=0.020, we extensively study the effective mass and its anisotropy, considering the experimentally simulated band gap. Furthermore, we analyze the behaviour of the effective mass of p – Sn1-xEuxTe concerning carrier concentration and the concentration of Eu impurity at T=300K. Our findings reveal remarkably low values for the effective mass, specifically m=0.006m0, where m0 represents the free electron mass, for p – Sn1-xEuxTe. This value is nearly 1/100th of the reported effective mass in a similar system, pb1-xEuxTe. This observation holds significant potential for spin-based devices like spin-Field Effect Transistors, as the much lower effective mass results in higher carrier mobility, which is highly desirable for such applications. [ABSTRACT FROM AUTHOR]