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In this work, we report the heat conduction across interfaces using dual-lag phase model (DPL). We applied the DPL model related with the temperature boundary condition to treat the interfacial phonon transport. To prove our predictive method, we compare the DPL model with the Boltzmann transport equation (BTE). It is found that our suggested model describe carefully the non-continuous heat conduction especially in the boundary (interface) scattering. Further, we investigate the heat transfer across SiO 2 /Si and di/Si interfaces. We found that the interfacial heat conduction depend on the mechanism of phonon scattering.

The main idea in this work, is to evaluate the advantage of Graphene transistors. In addition, we investigate the thermal stability of nano devices. In the first step, we study the ability of our proposed model to predict the thermal conduction in nano MOSFET devices. On the other hand, we studied the nano-heat conduction process in Graphene transistors. The ballistic-diffusive equation (BDE), was numerically solved to assess the heat transport in the nano transistors. The proposed model is used to report the thermal conductivity through the nature of scattering mechanism. It is found that our predictive model is able to describe phonons scattering in MOS structures. Furthermore, the Graphene MOSFET is more thermally stable than the Si MOSFET devices.