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The effects of temperature on the electrical properties of double gate DG-MOSFETs transistors in 4H-SiC and 6H-SiC technologies have been investigated and compared with single gate SG-MOSFET transistor using 130nm technology and BSIM3v3 model. In which the equivalent electronic circuits have been used for the two models (Series and Parallel) of the DG-MOSFET transistor. The current-voltage-temperature (I-V-T), transconductance-temperature (gm-T) and On/Off current ratio-temperature (ION/IOFF-T) characteristics have shown that the DG-MOSFETs are strongly affected by the temperature variation, especially the SG-MOSFET and DG-MOSFETs in 6H-SiC, as well as the DG-MOSFET transistor (Parallel model) in different semiconductor technologies is very sensitive to temperature variation compared to other transistors. The results obtained allowed the ability to predict the thermal behaviour of these transistors, and how effective are these devices in the very high temperature applications in a range from -200°C to 650°C. In addition, these transistors operate under low voltage and low power. [ABSTRACT FROM AUTHOR]

Silicon carbide is a very interesting semiconductor for applications in high temperature, high frequency and high power. In this article, we have studied and compared MOS transistors with 130nm silicon carbide (3C-SiC, 4H-SiC and 6H-SiC) technologies using BSIM3v3 model. To perform this work we have used PSpice to study the characteristics I(V) and the transconductance gm as a function of temperature in the range -200° C to 750° C with a supply voltage VDS = 1.2V. We have also calculated the transition frequencies fT of the three types of transistors. Our results show that the (3C, 4H and 6H)-SiC transistors operate under a low voltage, low power, high temperature and high frequency in submicron dimension. [ABSTRACT FROM AUTHOR]

Examines the influence of processing parameters on electrical properties of polysilicon/monosilicon junctions. Deposition temperature; Thickness of the polycrystalline silicon layer; Value of threshold voltage.