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Your search keyword '"Bergstrom, D.B."' showing total 8 results
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8 results on '"Bergstrom, D.B."'

1. Al/TixW1-x metal/diffusion-barrier bilayers: interfacial reaction pathways and kinetics during annealing

Author

Bergstrom, D.B., Petrov, I., and Greene, J.E.

Subjects
Aluminum alloys -- Heat treatment, Semiconductors -- Diffusion, Annealing -- Research, Physics
Abstract

Polycrystalline bcc TixW1-x layers with mixed 011 and 002 texture were grown on oxidized Si(001) substrates at 600 degrees C through ultrahigh-vacuum (UHV) magnetron sputter deposition from W and Ti0.33W0.67 targets using both pure Ar and Xe discharges. Ti concentrations in the 100-nm-thick layers were 0.6 and 33 at % depending on target composition and sputtering gas. Al overlayers, 190 nm, thick with strong 111 preferred orientation were deposited in Ar at 100 degrees C with and without breaking vacuum.

Published
1997

8. Origin of compositional variations in sputter-deposited Ti[sub x]W[sub 1-x] diffusion barrier....

Author

Bergstrom, D.B. and Tian, F.

Subjects
*THIN films, *SPUTTERING (Physics)
Abstract

Investigates the origin of compositional variations in sputter-deposited Ti[sub x]W[sub 1-x] diffusion barrier layers. Utilization of Rutherford backscattering in determining the films deposited in argon; Use of TRIM calculations and Monte Carlo gas-transport simulations in the study; Reduction of the sputtering gas resulting from the use of xenon.

Published
1995
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