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Integration of Samarium Cobalt hard magnets on silicon requires buffer/protective layers that can enhance the magnetic properties of the magnet while preserving its structure and chemical composition after post-annealing treatments needed for the formation of the magnetically hard phase. In this work, a comparison of Samarium-Cobalt films for five different buffer/protective layers, namely Ti, W, TiW, Ta, Cr and two different annealing temperatures, 650{\deg}C and 750{\deg}C, is presented. Depending on materials and annealing temperatures, magnetic properties such as saturation and coercivity of the SmCo film can be finely tuned. We show that coercivity up to 3.65 T or saturation magnetization up to 0.95 T can be reached by proper choice of the relevant process parameters: deposition temperature, material for the buffer/protective layer and annealing temperature. Such value of coercivity is among the highest found in literature for thin films of SmCo.

In-vivo, cells are frequently exposed to multiple mechanical stimuli arising from the extracellular microenvironment, with deep impact on many biological functions. On the other hand, current methods for mechanobiology do not allow to easily replicate in-vitro the complex spatio-temporal behavior of such mechanical signals. Here, we introduce a new platform for studying the mechanical coupling between the extracellular environment and the nucleus in living cells, based on active substrates for cell culture made of Fe-coated polymeric micropillars. Under the action of quasi-static external magnetic fields, each group of pillars produces synchronous nano-mechanical stimuli at different points of the cell membrane, thanks to the highly controllable pillars' deflection. This method enables to perform a new set of experiments for the investigation of cellular dynamics and mechanotransduction mechanisms in response to a periodic nano-pinching, with tunable strength and arbitrary temporal shape. We applied this methodology to NIH3T3 cells, demonstrating how the nano-mechanical stimulation affects the actin cytoskeleton, nuclear morphology, H2B core-histone dynamics and MKL transcription-cofactor nuclear to cytoplasmic translocation., Comment: Single .pdf file, 17 pages, 5 figures

The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted to have bulk bands with giant Rashba-like splitting, originated by the inversion symmetry breaking due to ferroelectric polarization. In this work, we show that GeTe(111) surfaces with inwards or outwards ferroelectric polarizations display opposite sense of circulation of spin in bulk Rashba bands, as seen by spin and angular resolved photoemission experiments. Our results represent the first experimental demonstration of ferroelectric control of the spin texture in a semiconductor, a fundamental milestone towards the exploitation of the non-volatile electrically switchable spin texture of GeTe in spintronic devices., Comment: 18 pages, 4 figures

GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angular resolved photoemission and piezo-force microscopy that GeTe displays surface and bulk Rashba bands arising from the intrinsic inversion symmetry breaking provided by the remanent ferroelectric polarization. This work points to the possibility to control the spin chirality of bands in GeTe by acting on its ferroelectric polarization., Comment: 10 pages, 4 figures

Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Ne\'el temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics., Comment: 16 pages, 5 figures, Published in Nature Communications (2013)

Optical spin orientation and depolarization phenomena in semiconductors are of overwhelming importance for the development of spin-optoelectronics. In this paper we employ Ge-based spin-photodiodes to investigate the room temperature spectral dependence of optical spin orientation in Germanium, in the range 400-1550 nm, and the photo-carrier spin relaxation phenomena. Apart from the maximum in the spin polarization of photo-carriers for photon energy resonant with the direct gap (1550 nm), we experimentally demonstrate the presence of a second sizable peak at 530 nm due to photo-generation far away from the center of the Brillouin zone, within the L valleys. Furthermore, our data indicate that the equivalent the spin lifetime of holes in Ge is in the order of 5-10 ps, meaning that the spin diffusion length for holes at room temperature is larger than expected, in the order of 150-220 nm., Comment: 12 pages, 5 figures

Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.

The design of large-scale electronic circuits that are entirely spintronics-driven requires a current source that is highly spin-polarised at and beyond room temperature, cheap to build, efficient at the nanoscale and straightforward to integrate with semiconductors. Yet despite research within several subfields spanning nearly two decades, this key building block is still lacking. We experimentally and theoretically show how the interface between Co and phthalocyanine molecules constitutes a promising candidate. Spin-polarised direct and inverse photoemission experiments reveal a high degree of spin polarisation at room temperature at this interface. We measured a magnetic moment on the molecules's nitrogen pi orbitals, which substantiates an ab-initio theoretical description of highly spin-polarised charge conduction across the interface due to differing spinterface formation mechanims in each spin channel. We propose, through this example, a recipe to engineer simple organic-inorganic interfaces with remarkable spintronic properties that can endure well above room temperature.

Here we show the room temperature integrated detection of the helicity of photons with 1300 nm wavelength, via spin- photodiodes based on fully epitaxial Fe/MgO/Ge(001) heterostructures. These devices convert the photon helicity in a variation of the photocurrent ({\Delta}I) for opposite orientations of the Fe magnetization. We found {\Delta}I on the order of 5.9% for 100% circularly polarized light, both in the forward and the reverse bias, with a contribution of 0.8% from the Fe dichroic light absorption and of 5.1% from the spin filtering of photo-generated carriers crossing the Fe/MgO/Ge tunneling barrier., Comment: This paper has been withdrawn by the author due to some imperfections in the figures

The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule labels in several applications - including single molecule manipulation, separation, cells manipulation and biomagnetic sensing, the accurate control over the handling of the single magnetic nanoparticles becomes crucial as it may reflect the handling of the single molecules. The approach described here opens the path to the implementation and design of nano-transport lines, with application to single molecule study and lab-on-chip devices. In perspective, the easy integration on chip with sensors of domain walls and particles will allow for the realization of programmable circuits for molecular manipulation with continuous control of the desired process.

The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule carriers or labels, the accurate control over the handling of the single magnetic nanoparticle is crucial for several applications including single molecule manipulation, separation, cells manipulation and biomagnetic sensing.

A new approach based on the domain wall displacement in confined ferromagnetic nanostructures for attracting and sensing a single nanometric magnetic particles is presented. We modeled and experimentally demonstrated the viability of the approach using an anisotropic magnetoresistance device made by a micron-size square ring of Permalloy designed for application in magnetic storage. This detection concept can be suitable to biomolecular recognition, and in particular to single molecule detection., Comment: 8pages, 3figures

The effect of gold capping on magnetic and transport properties of optimally doped manganite thin films is studied. An extraordinary suppression of conductivity and magnetic properties occurs in epitaxial (001) La_0.67Sr_0.33MnO_3 (LSMO) films grown on SrTiO_3 upon deposition of 2 nm of Au: in the case of ultrathin films of LSMO (4 nm thick) the resistivity increases by four orders of magnitude while the Curie temperature decreases by 180 K. Zero-field 55Mn nuclear magnetic resonance reveals a significant reduction of ferromagnetic double-exchange mechanism in manganite films upon the gold capping. We find evidence for the formation of a 1.9-nm thick magnetic "dead-layer" at the Au/LSMO interface, associated with the creation of interfacial non double-exchange insulating phases., Comment: 4 figures

We report about La0.67Sr0.33MnO3 single crystal manganite thin films in interaction with a gold capping layer. With respect to uncoated manganite layers of the same thickness, Au-capped 4 nm-thick manganite films reveal a dramatic reduction (about 185 K) of the Curie temperature TC and a lower saturation low-temperature magnetization M0. A sizeable TC reduction (about 60 K) is observed even when an inert SrTiO3 layer is inserted between the gold film and the 4 nm-thick manganite layer, suggesting that this effect might have an electrostatic origin.

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies., Comment: To appear in Physical Review Letters