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In the race towards "beyond 6G" telecommunication platforms, magnonics emerges as a promising solution due to its wide tunability within the FR3 band (7-24 GHz). So far, however, the need for an external magnetic bias field to allow the coherent excitation of spin waves has been a major bottleneck. Conventional bulky electromagnets are power-intensive and challenging to integrate on-chip, restricting magnonic applications largely to academic research. Here, we present the first demonstration of a standalone, tunable magnonic device featuring all-electric input and output, fully integrated on a silicon substrate with a compact footprint of 100 x 150 $\mu$m. The device consists of a CoFeB waveguide equipped with two radio frequency antennas, flanked by a symmetric configuration of T-shaped magnetic flux concentrators and rectangular SmCo permanent micromagnets. By varying the distance D between the flux concentrators and the permanent magnets from 0 to 12 $\mu$m, the transverse bias field can be tuned from 20.5 mT to 11 mT, respectively. This variation directly modulates the dispersion relation of Damon-Eshbach spin wave modes in the CoFeB waveguide. In these proof-of-concept devices, the spin wave frequency band ranges from 3 to 8 GHz, with precise phase shift tuning of up to 120 degrees at 6 GHz achieved by varying D within the 0-8 $\mu$m range. The operational frequency band could even be pushed to higher frequencies through optimized micromagnet engineering.

The exceptional magnetic, optical and phononic properties of Yttrium Iron Garnet (YIG) make it unique for spin-wave based and photonic applications. Yet, nanostructuring crystalline YIG and manipulating its magnetism in a non-destructive way is an outstanding challenge, and so far mostly limited to two-dimensional capabilities. Here, we show that irradiation of single-crystal YIG films with a focused UV laser drives a stable, giant enhancement of the perpendicular magnetic anisotropy, preserving the crystalline quality. This modulation is highly confined at the nanoscale in both the lateral and vertical directions, and its extension within the volume can be finely tuned with a continuous depth-control. By harnessing these three-dimensional anisotropy profiles, we demonstrate a large tuning of the spin-wave band structure, volume spatial localization, and non-reciprocity, realizing proof-of-principle 3D magnonic crystals. This straightforward, single-step, laser nanofabrication of three-dimensional magnetic systems based on crystalline YIG thin films opens the way to design novel functions in magnonic and magneto-optic devices., Comment: 17 pages, 5 figures

One of the most appealing features of magnonics is the easy tunability of spin-waves propagation via external magnetic fields. Usually this requires bulky and power-hungry electromagnets which are not compatible with device miniaturization. Here we propose a different approach, exploiting the stray field from permanent micromagnets integrated on the same chip of a magnonic wave-guide. In our monolithic device, we employ two SmCo square micromagnets (10x10 $\mu$m$^2$) flanking a CoFeB conduit at different distances from its axis, to produce a tunable transverse bias field between 7.5 and 3.0 mT in the conduit region between the magnets. Spin waves excited by an antenna just outside the region between the magnets enter a region with a variable higher (lower) effective field when an external bias field is applied parallel (antiparallel) to that from the micromagnets. Consequently, the attenuation length and phase shift of Damon-Eshbach spin waves can be tuned in a wide range by playing with the parallel-antiparallel configuration of the external bias and the distance between SmCo micromagnets and the CoFeB conduit. This work demonstrates the potential of permanent micro-magnets for the realization of low-power, integrated magnonic devices with tunable functionalities.

The fabrication and integration of high-quality structures of Yttrium Iron Garnet (YIG) is critical for magnonics.Films with excellent properties are obtained only on single crystal Gadolinium Gallium Garnet (GGG) substrates using high-temperature processes. The subsequent realization of magnonic structures via lithography and etching is not straightforward as it requires a tight control of the edge roughness, to avoid magnon scattering, and planarization in case of multilayer devices. In this work we describe a different approach based on local laser annealing of amorphous YIG films, avoiding the need for subjecting the entire sample to high thermal budgets and for physical etching. Starting from amorphous and paramagnetic YIG films grown by pulsed laser deposition at room temperature on GGG, a 405 nm laser is used for patterning arbitrary shaped ferrimagnetic structures by local crystallization. In thick films (160 nm) the laser induced surface corrugation prevents the propagation of spin-wave modes in patterned conduits. For thinner films (80 nm) coherent propagation is observed in 1.2 micron wide conduits displaying an attenuation length of 5 micron which is compatible with a damping coefficient of about 5e-3. Possible routes to achieve damping coefficients compatible with state-of-the art epitaxial YIG films are discussed., Comment: 29 pages, 6 figures, This is the pre-peer reviewed version of the following article: "Patterning magnonic structures via laser induced crystallization of Yittrium Iron Garnet", by A. Del Giacco et al. https://doi.org/10.1002/adfm.202401129, which has been accepted for publication in Advanced Functional Materials

Inspired by recent graded metamaterials designs, we create phononic arrays of micro-resonators for frequency signal amplification and wave filtering. Leveraging suspended waveguides on a thick silicon substrate, we hybridize surface Rayleigh and Lamb flexural waves to effectively achieve phononic signal control along predefined channels. The guided waves are then spatially controlled using a suitable grading of the micro-resonators, which provide high signal-to-noise ratio and simultaneously create phononic delay-lines. The proposed device can be used for sensing, wave filtering or energy harvesting.

We investigate the spin dynamics driven by terahertz magnetic fields in epitaxial thin films of cobalt in its three crystalline phases. The terahertz magnetic field generates a torque on the magnetization which causes it to precess for about 1 ps, with a sub-picosecond temporal lag from the driving force. Then, the magnetization undergoes natural damped THz oscillations at a frequency characteristic of the crystalline phase. We describe the experimental observations solving the inertial Landau-Lifshitz-Gilbert equation. Using the results from the relativistic theory of magnetic inertia, we find that the angular momentum relaxation time $\eta$ is the only material parameter needed to describe all the experimental evidence. Our experiments suggest a proportionality between $\eta$ and the strength of the magneto-crystalline anisotropy., Comment: 6 pages, 4 figures, Supplemental Material

A novel frequency modulated MEMS magnetometer is presented. The new device is inspired by the magnetic force microscopy technique, it combines standard MEMS technology with magnetic elements to obtain a magnetometer with potential for low power consumption and high performance. The analytical model and the characterization of the first proof-concept device are presented., Comment: Accepted version of the paper

The impact of magnetic domains in magnetic flux concentrators is studied using the simulation software MuMax3. First, the simulation parameters are validated using experimental results from magnetic force microscopy; second the simulation output is benchmarked with the one obtained using Comsol Multiphysics. Finally, the impact of magnetic domain is assessed, showing how micromagnetic effects can become relevant, if not dominant, when scaling the gap between the MFC and the sensor., Comment: this is the accepted manuscript

Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material., Comment: 21 pages, 4 figures

Integrated optically-inspired wave-based processing is envisioned to outperform digital architectures in specific tasks, such as image processing and speech recognition. In this view, spin-waves represent a promising route due to their nanoscale wavelength in the GHz frequency range and rich phenomenology. Here, we realize a versatile optically-inspired platform using spin-waves, demonstrating the wavefront engineering, focusing, and robust interference of spin-waves with nanoscale wavelength. In particular, we use magnonic nanoantennas based on tailored spin-textures for launching spatially shaped coherent wavefronts, diffraction-limited spin-wave beams, and generating robust multi-beam interference patterns, which spatially extend for several times the spin-wave wavelength. Furthermore, we show that intriguing features, such as resilience to back-reflection, naturally arise from the spin-wave nonreciprocity in synthetic antiferromagnets, preserving the high quality of the interference patterns from spurious counterpropagating modes. This work represents a fundamental step towards the realization of nanoscale optically-inspired devices based on spin-waves.

By performing density functional theory (DFT) and Green's functions calculations, complemented by X-ray Photoemission Spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such system exhibits several intriguing properties resulting from the complex interplay of exchange interaction, electric polarization and spin-orbit coupling. Despite a rather strong interfacial hybridization between Fe and GeTe bands, resulting in a complete suppression of the surface states of the latter, the bulk Rashba bands are hardly altered by the ferromagnetic overlayer. This could have a deep impact on spin dependent phenomena observed at this interface, such as spin-to-charge interconversion, which are likely to involve bulk rather than surface Rashba states., Comment: 8 pages, 4 figures

Magnonics is gaining momentum as an emerging technology for information processing. The wave character and Joule heating-free propagation of spin-waves hold promises for highly efficient analog computing platforms, based on integrated magnonic circuits. Miniaturization is a key issue but, so far, only few examples of manipulation of spin-waves in nanostructures have been demonstrated, due to the difficulty of tailoring the nanoscopic magnetic properties with conventional fabrication techniques. In this Letter, we demonstrate an unprecedented degree of control in the manipulation of spin-waves at the nanoscale by using patterned reconfigurable spin-textures. By space and time-resolved scanning transmission X-ray microscopy imaging, we provide direct evidence for the channeling and steering of propagating spin-waves in arbitrarily shaped nanomagnonic waveguides based on patterned domain walls, with no need for external magnetic fields or currents. Furthermore, we demonstrate a prototypic nanomagnonic circuit based on two converging waveguides, allowing for the tunable spatial superposition and interaction of confined spin-waves modes., Comment: 16 pages, 5 figures

Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness., Comment: 20 pages

The ferroelectric polarization and short-circuit photocurrent in BaTiO3 thin films have been studied for different contact configurations that allow to measure the photoresponse and polarization under the presence of large or negligible imprint field. It is found that in all cases, the direction of the photocurrent is dictated by the depolarizing field and ultimately by the film polarization, with a negligible contribution of the imprint electric field. However, dramatic differences are found in their time-dependent photoresponse. Whereas in presence of imprint, steady photocurrents are observed under suitable illumination, transient photocurrents are generated in absence of imprint. It is argued that this distinct behavior is determined by the different Schottky barrier height at electrodes which thus offers a simple way to tune the film photoresponse. These findings could be exploited for electro-optic read-out and writing of ferroelectric memories.

Bulk NiFe2O4 is an insulating ferrimagnet. Here, we report on the epitaxial growth of spinel NiFe2O4 ultrathin films onto SrTiO3 single-crystals. We will show that - under appropriate growth conditions - epitaxial stabilization leads to the formation of a spinel phase with magnetic and electrical properties that radically differ from those of the bulk material : an enhanced magnetic moment (Ms) - about 250% larger - and a metallic character. A systematic study of the thickness dependence of Ms allows to conclude that its enhanced value is due to an anomalous distribution of the Fe and Ni cations among the A and B sites of the spinel structure resulting from the off-equilibrium growth conditions and to interface effects. The relevance of these findings for spinel- and, more generally, oxide-based heterostructures is discussed. We will argue that this novel material could be an alternative ferromagetic-metallic electrode in magnetic tunnel junctions., Comment: accepted for publication in Phys. Rev. B