48 results on '"Boguth, S."'
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2. Integration of SiGe HBT with <tex>$\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$</tex> in 130nm and 90nm CMOS
3. Integration of SiGe HBT with $\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$ in 130nm and 90nm CMOS
4. SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project
5. A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology
6. Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric
7. A 77GHz 4-channel automotive radar transceiver in SiGe
8. Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors
9. Silicon-based RF ICs up to 100 GHz: research trends and applications
10. Integrated injection logic in a high-speed SiGe bipolar technology.
11. Static frequency dividers up to 133GHz in SiGe:C bipolar technology.
12. 168 GHz dynamic frequency divider in SiGe:C bipolar technology.
13. SiGe bipolar technology for automotive radar applications.
14. High-speed SiGe HBT technology and applications to mm-wave circuits.
15. 3.3 ps SiGe bipolar technology.
16. SiGe bipolar technology with 3.9 ps gate delay.
17. High-performance implanted base silicon bipolar technology for RF applications
18. Sub 5 ps SiGe bipolar technology.
19. 15 GHz wideband amplifier with 2.8 dB noise figure in SiGe bipolar technology.
20. High-frequency and noise characteristics of advanced Si and Si/SiGe bipolar transistors.
21. SiGe bipolar technology for mixed digital and analogue RF applications.
22. 12 ps implanted base silicon bipolar technology.
23. A 0.6 μm Si Bipolar Technology with 17 ps CML Gate Delay and 30 GHz Static Frequency Divider.
24. SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay.
25. 0.5 /spl mu/m/60 GHz f/sub max/ implanted base Si bipolar technology.
26. Benefits of SiGe over silicon bipolar technology for broadband mixers with bandwidth above 10 GHz
27. High-frequency and noise characteristics of advanced Si and Si/SiGe bipolar transistors
28. SiGe bipolar technology for automotive radar applications
29. Silicon technologies for RF integrated circuits
30. 53 GHz static frequency divider in a Si/SiGe bipolar technology
31. 86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology
32. 15 GHz wideband amplifier with 2.8 dB noise figure in SiGe bipolar technology
33. 3.3 ps SiGe bipolar technology
34. Sub 5 ps SiGe bipolar technology
35. SiGe bipolar technology for mixed digital and analogue RF applications
36. High-speed SiGe HBT technology and applications to mm-wave circuits
37. A low power 20 GHz SiGe dual-modulus prescaler
38. 15 GHz wideband amplifier with 2.8 dB noise figure in SiGe bipolar technology
39. High-speed SiGe:C bipolar technology
40. 0.5 μm/60 GHz f/sub max/ implanted base Si bipolar technology
41. SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay
42. Silicon technologies for RF integrated circuits.
43. 53 GHz static frequency divider in a Si/SiGe bipolar technology.
44. A 50 GHz implanted base silicon bipolar technology with 35 GHz static frequency divider.
45. 86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology.
46. Benefits of SiGe over silicon bipolar technology for broadband mixers with bandwidth above 10 GHz.
47. A low power 20 GHz SiGe dual-modulus prescaler.
48. Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric
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