Search

Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe1-xGax alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe1-xGax alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe1-xGax - [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10-5 s m-1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.

We investigate localized in-plane strains on the microscale, induced by arrays of biased surface electrodes patterned on piezoelectrics. Particular focus is given to the influence that adjacent electrode pairs have on one another to study the impact of densely packed electrode arrays. We present a series of X-ray microdiffraction studies to reveal the spatially resolved micrometer-scale strain distribution. The strain maps with micrometer-scale resolution highlight how the local strain profile in square regions up to 250 x 250 lm2 in size is affected by the surface electrodes that are patterned on ferroelectric single-crystal [Pb(Mg1/3Nb2/3)O3]x-[PbTiO3]1−x. The experimental measurements and simulation results show the influence of electrode pair distance, positioning of the electrode pair, including the angle of placement, and neighboring electrode pair arrangements on the strength and direction of the regional strain. Our findings are relevant to the development of microarchitected strain-mediated multiferroic devices. The electrode arrays could provide array-addressable localized strain control for applications including straintronic memory, probabilistic computing platforms, microwave devices, and magnetic-activated cell sorting platforms.

Many questions are still open regarding the physical mechanisms behind the magnetic switching in Gd-Fe-Co alloys by single optical pulses. Phenomenological models suggest a femtosecond scale exchange relaxation between sublattice magnetization as the driving mechanism for switching. The recent observation of thermally induced switching in Gd-Fe-Co by using both several picosecond optical laser pulse as well as electric current pulses has questioned this previous understanding. This has raised the question of whether or not the same switching mechanics are acting at the femtosecond and picosecond scales. In this work, we aim at filling this gap in the understanding of the switching mechanisms behind thermal single-pulse switching. To that end, we have studied experimentally thermal single-pulse switching in Gd-Fe-Co alloys, for a wide range of system parameters, such as composition, laser power, and pulse duration. We provide a quantitative description of the switching dynamics using atomistic spin dynamics methods with excellent agreement between the model and our experiments across a wide range of parameters and timescales, ranging from femtoseconds to picoseconds. Furthermore, we find distinct element-specific damping parameters as a key ingredient for switching with long picosecond pulses and argue that switching with pulse durations as long as 15 ps is possible due to a low damping constant of Gd. Our findings can be easily extended to speed up dynamics in other contexts where ferrimagnetic Gd-Fe-Co alloys have been already demonstrated to show fast and energy-efficient processes, e.g., domain-wall motion in a track and spin-orbit torque switching in spintronics devices.

Topological solitons such as magnetic skyrmions have drawn attention as stable quasi-particle-like objects. The recent discovery of polar vortices and skyrmions in ferroelectric oxide superlattices has opened up new vistas to explore topology, emergent phenomena and approaches for manipulating such features with electric fields. Using macroscopic dielectric measurements, coupled with direct scanning convergent beam electron diffraction imaging on the atomic scale, theoretical phase-field simulations and second-principles calculations, we demonstrate that polar skyrmions in (PbTiO3)n/(SrTiO3)n superlattices are distinguished by a sheath of negative permittivity at the periphery of each skyrmion. This enhances the effective dielectric permittivity compared with the individual SrTiO3 and PbTiO3 layers. Moreover, the response of these topologically protected structures to electric field and temperature shows a reversible phase transition from the skyrmion state to a trivial uniform ferroelectric state, accompanied by large tunability of the dielectric permittivity. Pulsed switching measurements show a time-dependent evolution and recovery of the skyrmion state (and macroscopic dielectric response). The interrelationship between topological and dielectric properties presents an opportunity to simultaneously manipulate both by a single, and easily controlled, stimulus, the applied electric field.

We investigate the influence of dislocations and twin walls in BaTiO3 on its ferroelectric response and the resulting effect on the perpendicular magnetic anisotropy (PMA) of a strain-coupled [Co Ni]n film. A dense twinned structure in conjunction with a high dislocation density significantly reduces the converse piezoelectric effect of BaTiO3 by hindering the propagation of newly nucleated domains with an applied electric field. This, in turn, results in a modest reduction of the PMA of the ferromagnetic layer. On the other hand, the ferroelectric polarization reorients from [100] to [001] direction in a dislocation-free BaTiO3, inducing the maximum achievable in-plane compressive strain of 1.1%. A large fraction of this uniaxial strain is transferred to the magnetoelastically coupled ferromagnetic layers whose magnetization switches to in plane via the inverse magnetostriction effect. This work reveals the critical role of the interplay between twin walls and dislocations within a ferroelectric substrate in the performance of multiferroic heterostructures and provides insight into the development of highly energy-efficient magnetoelectric devices.

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (a-) rare earth-transition metal (a-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic a-Gd22-xTbxCo78 thin films, from x=0 to 18, and elucidate the role of Gd in HI-AOS in a-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with L=0) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing a-Gd10Tb12Co78 leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that accounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element-specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

The magnetoelectric properties of exchange-coupled Ni/CoFeB-based composite multiferroic microstructures are investigated. The strength and sign of the magnetoelastic effect are found to be strongly correlated with the ratio between the thicknesses of two magnetostrictive materials. In cases where the thickness ratio deviates significantly from one, the magnetoelastic behavior of the multiferroic microstructures is dominated by the thicker layer, which contributes more strongly to the observed magnetoelastic effect. More symmetric structures with a thickness ratio equal to one show an emergent interfacial behavior which cannot be accounted for simply by summing up the magnetoelastic effects occurring in the two constituent layers. This aspect is clearly visible in the case of ultrathin bilayers, where the exchange coupling drastically affects the magnetic behavior of the Ni layer, making the Ni/CoFeB bilayer a promising next-generation synthetic magnetic system entirely. This study demonstrates the richness and high tunability of composite multiferroic systems based on coupled magnetic bilayers compared to their single magnetic layer counterparts. Furthermore, because of the compatibility of CoFeB with present magnetic tunnel junction-based spintronic technologies, the reported findings are expected to be of great interest for the development of ultralow-power magnetoelectric memory devices.

Enhancing the magnetoelectric coupling in a strain-mediated multiferroic composite structure plays a vital role in controlling magnetism by electric fields. An enhancement of magnetoelastic coupling between ferroelectric single crystal (011)-cut [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈ 0.30) and ferromagnetic polycrystalline Ni thin film through an interposed benzocyclobutene polymer thin film is reported. A nearly twofold increase in sensitivity of remanent magnetization in the Ni thin film to an applied electric field is observed. This observation suggests a viable method of improving the magnetoelectric response in these composite multiferroic systems.

Spin-transfer torque magnetic tunneling junction devices capable of a multilevel three-dimensional (3D) information processing are studied in the sub-20-nm size range. The devices are built using He+ and Ne+ focused ion beam etching. It has been demonstrated that due to their extreme scalability and energy efficiency, these devices can significantly reduce the device footprint compared to the modern CMOS approaches and add advanced features in a 3D stack with a sub-20-nm size using a spin polarized current.

We show that recently fabricated Chevron-type graphene nanoribbons act as a monolithic superlattice structure. This is enabled by the large periodic unit cells with regions of different effective bandgaps in these nanoribbons, resulting in minibands and gaps in the density of states above the conduction band edge. Quantum transport calculations based on non-equilibrium Green's function formalism reveal that a negative differential resistance (NDR) is expected to manifest in these nanoribbons. Due to the relatively low density of states, such NDR behavior can also be modulated with a gate electric field. We show that a sub-thermal subthreshold swing (< kT/q) can potentially be obtained in a three-terminal configuration, even in the presence of optical phonon scattering.

We demonstrate deterministic multi-step rotation of a magnetic single-domain (SD) state in Nickel nanodisks using the multiferroic magnetoelastic effect. Ferromagnetic Nickel nanodisks are fabricated on a piezoelectric Lead Zirconate Titanate (PZT) substrate, surrounded by patterned electrodes. With the application of a voltage between opposing electrode pairs, we generate anisotropic in-plane strains that reshape the magnetic energy landscape of the Nickel disks, reorienting magnetization toward a new easy axis. By applying a series of voltages sequentially to adjacent electrode pairs, circulating in-plane anisotropic strains are applied to the Nickel disks, deterministically rotating a SD state in the Nickel disks by increments of 45°. The rotation of the SD state is numerically predicted by a fully-coupled micromagnetic/elastodynamic finite element analysis (FEA) model, and the predictions are experimentally verified with magnetic force microscopy (MFM). This experimental result will provide a new pathway to develop energy efficient magnetic manipulation techniques at the nanoscale.

A single femto-second optical pulse can fully reverse the magnetization of a film within picoseconds. Such fast operation hugely increases the range of application of magnetic devices. However, so far, this type of ultrafast switching has been restricted to ferri-magnetic GdFeCo films. In contrast, all optical switching of ferro-magnetic films require multiple pulses, thereby being slower and less energy efficient. Here, we demonstrate magnetization switching induced by a single laser pulse in various ferromagnetic Co/Pt multilayers grown on GdFeCo, by exploiting the exchange coupling between the two magnetic films. Table-top depth-sensitive time-resolved magneto-optical experiments show that the Co/Pt magnetization switches within 7 ps. This coupling approach will allow ultrafast control of a variety of magnetic films, which is critical for applications.

We report the magnetic response of Co/Pt multilayers to picosecond electrical heating. Using photoconductive Auston switches, we generate electrical pulses with 5.5 ps duration and hundreds of pico-Joules to pass through Co/Pt multilayers. The electrical pulse heats the electrons in the Co/Pt multilayers and causes an ultrafast reduction in the magnetic moment. A comparison between optical and electrically induced demagnetization of the Co/Pt multilayers reveals significantly different dynamics for optical vs electrical heating. We attribute the disparate dynamics to the dependence of the electron-phonon interaction on the average energy and the total number of initially excited electrons.

Nanomagnetic devices in -The sub-5-nm size range still do not exist, not only because of many fabrication and characterization challenges but also because of -The poorly understood physics in this size range. Previous experimental studies from various groups have shown that -The spin relaxation time can be increased by orders of magnitude with this size reduction. The increased spin lifetime leads to a combination of effects such as spin accumulation and tunneling magnetoresistance enhancement which in turn can significantly and favorably affect -The device performance [1]. The goal of this study is to exploit this new physics through fabrication and testing of magnetic tunneling junction (MTJ) devices with a characteristic size of below 5 nm. To achieve this goal, we integrate magnetic nanoparticles into MTJ structures and measure -Their key properties such as I-V curves and magnetoresistance dependencies. The nanoparticles, with sizes ranging from below 2 to over 10 nm, are made of -The ferrimagnetic spinel ferrite CoFe2O4 using co-precipitation chemistry. It has been -Theoretically predicted that -These nanoparticles become half-metallic in this size range and thus can lead to unprecedented high magnetoresistance values. Indeed, -The nanodevices under study display spin-filtering properties, as confirmed through measurements of magnetoresistance and I-V dependences [2]. This paper summarizes -The measured room-temperature anomalous magnetoresistance and I-V curves with a Coulomb-staircase-like dependence characteristic of a single-electron transport.

Up until now, magnetic nanodots used for magnetic random access memory have required spin-polarized currents to transfer the angular momentum needed to switch the magnetization and thereby switch the magnetic memory bit. This particular switching process, however, is limited to nanosecond or greater timescales-too slow for use as low-level cache in energy efficient electronics systems. On the other hand, this work aims to achieve ultrafast femtosecond switching of nanomagnetic dots without the use of spin-polarized currents. Using just linearly polarized light, several research groups have demonstrated all-optical magnetization switching in large GdFeCo magnetic dots, ranging from several microns [1-4] down to 400 nm [5]; this work characterizes the switching behavior as these dots are scaled down further in size, with the aim of minimizing the energy required for switching the magnetic memory bit. The fabrication process, magnetization behavior and optical switching behavior are additionally characterized to better understand how size affects the functionality of these optically-switchable ferrimagnets. Knowledge of this behavior will allow future developments of simultaneously ultrasmall and ultrafast magnetic memory systems, thereby enabling increased data storage in future electronics.

We report the magnetic response of Pt/Au/GdFeCo trilayers to optical irradiation of the Pt surface. For trilayers with Au thickness greater than 50 nm, the great majority of energy is absorbed by the Pt layer, creating an initial temperature differential of thousands of kelvin between the Pt/Au layers and the GdFeCo layer. The resulting electronic heat current across the metal multilayer lasts for several picoseconds with energy flux in excess of 2TWm-2 and provides sufficient heating to the GdFeCo electrons to induce deterministic reversal of the magnetic moment.

Ultrafast optical heating of the electrons in ferrimagnetic metals can result in all-optical switching (AOS) of the magnetization. Here we report quantitative measurements of the temperature rise of GdFeCo thin films during helicity-independent AOS. Critical switching fluences are obtained as a function of the initial temperature of the sample and for laser pulse durations from 55 fs to 15 ps. We conclude that nonequilibrium phenomena are necessary for helicity-independent AOS, although the peak electron temperature does not play a critical role. Pump-probe time-resolved experiments show that the switching time increases as the pulse duration increases, with 10 ps pulses resulting in switching times of ∼13 ps. These results raise new questions about the fundamental mechanism of helicity-independent AOS.

All-optical magnetic switching (AOS) is a recently observed rich and puzzling phenomenon that offers promising technological applications. However, a fundamental understanding of the underlying mechanisms remains elusive. Here we present a model for multishot helicity-dependent AOS in ferromagnetic materials based on a purely heat-driven mechanism in the presence of magnetic circular dichroism (MCD). We predict that AOS should be possible with as little as 0.5% of MCD, after a minimum number of laser shots heat the sample close to the Curie temperature. Finally, we qualitatively reproduce the all-optically switched domain patterns observed experimentally by numerically simulating the result of multiple laser shots on an FePtC granular ferromagnetic film.

The spin-transfer torque magnetic tunneling junction (MTJ) technology may pave a way to a universal memory paradigm. MTJ devices with perpendicular magnetic anisotropy have the potential to have high thermal stability, high tunneling magnetoresistance, and low critical current for energy-efficient current-induced magnetization switching. Using devices fabricated through focused ion beam etching with Ga-and Ne-ion beams, this paper aimed to understand the size dependence of the current/voltage characteristics in the sub-10 nm range. The switching current density drastically dropped around 1 MA/cm2 as the device size was reduced below 10 nm. A stability of over 22 kT measured for a 5 nm device indicated a significantly reduced spin relaxation time.

We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide- semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator. © 2014 AIP Publishing LLC.

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs. © 2013 AIP Publishing LLC.

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. The authors describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. They discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond. © 2008 American Vacuum Society.

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects.