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3. Ideal RESURF Geometries

Author

Ferrara, Alessandro, primary, Boksteen, Boni K., additional, Hueting, Raymond J. E., additional, Heringa, Anco, additional, Schmitz, Jurriaan, additional, and Steeneken, Peter G., additional

Published
2015
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6. Interface Trap Density Estimation in FinFETs Using the g\mathrm{ m}/ I\mathrm{ D} Method in the Subthreshold Regime.

Author

Boksteen, Boni K., Schmitz, Jurriaan, and Hueting, Raymond J. E.

Subjects
*FIELD-effect transistors, *CURRENT-voltage characteristics, *ION traps, *METAL oxide semiconductors, *COMPUTER-aided design
Abstract

In this paper, we show that the subthreshold current–voltage characteristic can be used for estimating the interface trap density as a function of the energy in fully depleted symmetric metal-oxide-semiconductor devices with a minimum amount of modeling. The method is analyzed using TCAD simulations, and illustrated with the measurements on n-type silicon-on-insulator FinFETs. The results indicate that the trap density can be extracted between $\sim 0.65$ and 0.90 eV. This range is limited by resolution issues at the lowest current levels, and by the transition from subthreshold to saturation behavior at the high current levels. [ABSTRACT FROM AUTHOR]

Published
2016
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