1. Stishovite single-crystal growth and application to silicon self-diffusion measurements
- Author
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Shatskiy, Anton, Yamazaki, Daisuke, Borzdov, Yuriy M., Matsuzaki, Takuya, Litasov, Konstantin D., Cooray, Titus, Ferot, Anais, Ito, Eiji, and Katsura, Tomoo
- Subjects
Materials at high pressures -- Evaluation ,Silicate minerals -- Properties ,Silicon -- Properties ,Solubility -- Measurement ,Crystals -- Growth ,Crystals -- Observations ,Earth sciences - Abstract
Large single crystals of stishovite were successfully synthesized at 11 GPa from a silica solution in water. The potential of both slow cooling and thermal gradient methods were examined. The thermal gradient method provided crystals of 0.8 x 0.8 x 1.3 mm in size grown at 1350 [degrees]C and a thermal gradient of 50 [degrees]C/mm using stishovite as a silica source. The use of quartz as a source resulted in the appearance of numerous stishovite crystals in the solution interior resulting in diminished space for the growth of large crystals. This can be explained by a significant difference in the solubility of metastable quartz and stishovite in water, estimated to be 85.3 and 5.6 wt% Si[O.sub.2] at 1000 [degrees]C and 11 GPa, respectively. Crystals up to 0.8 x 1.3 x 1.5 mm were grown by the slow cooling method in the system Si[O.sub.2] + 14.7 wt% [H.sub.2]O as temperature was decreased from 1600 to 1000 [degrees]C with a cooling rate of 2 [degrees]C/min. The size of single crystals obtained was large enough to carry out silicon self-diffusion experiments, which were performed at a pressure of 14 GPa and temperatures from 1400 to 1800 [degrees]C. The lattice diffusion coefficients along the [110] and [00l] directions can be expressed as [D.sub.[110]] ([m.sup.2]/s) 4.10 x [10.sup.-12] exp [-322 (kJ/mol)/RT] and [D.sub.[001]] ([m.sup.2]/s) = 5.62 x [10.sup.-12] exp [- 334 (kJ/mol)/RT], respectively, where R is the gas constant and T is the absolute temperature. Keywords: Stishovite, single-crystal growth, high pressure, aqueous fluid, silica solubility, diffusion DOI: 10.2138/am.2010.3255
- Published
- 2010
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