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Binary AsxSe100−x alloys from the border of a glass-forming region (65 < x < 70) subjected to nanomilling in dry and dry–wet modes are characterized by the XRPD, micro-Raman scattering (micro-RS) and revised positron annihilation lifetime (PAL) methods complemented by a disproportionality analysis using the quantum–chemical cluster modeling approach. These alloys are examined with respect to tetra-arsenic biselenide As4Se2 stoichiometry, realized in glassy g-As65Se35, glassy–crystalline g/c-As67Se33 and glassy–crystalline g/c-As70Se30. From the XRPD results, the number of rhombohedral As and cubic arsenolite As2O3 phases in As-Se alloys increases after nanomilling, especially in the wet mode realized in a PVP water solution. Nanomilling-driven amorphization and reamorphization transformations in these alloys are identified by an analysis of diffuse peak halos in their XRPD patterning, showing the interplay between the levels of a medium-range structure (disruption of the intermediate-range ordering at the cost of an extended-range one). From the micro-RS spectroscopy results, these alloys are stabilized by molecular thioarsenides As4Sen (n = 3, 4), regardless of their phase composition, remnants of thioarsenide molecules destructed under nanomilling being reincorporated into a glass network undergoing a polyamorphic transition. From the PAL spectroscopy results, volumetric changes in the wet-milled alloys with respect to the dry-milled ones are identified as resulting from a direct conversion of the bound positron–electron (Ps, positronium) states in the positron traps. Ps-hosting holes in the PVP medium appear instead of positron traps, with ~0.36–0.38 ns lifetimes ascribed to multivacancies in the As-Se matrix. The superposition of PAL spectrum peaks and tails for pelletized PVP, unmilled, dry-milled, and dry–wet-milled As-Se samples shows a spectacular smoothly decaying trend. The microstructure scenarios of the spontaneous (under quenching) and activated (under nanomilling) decomposition of principal network clusters in As4Se2-bearing arsenoselenides are recognized. Over-constrained As6·(2/3) ring-like network clusters acting as pre-cursors of the rhombohedral As phase are the main products of this decomposition. Two spontaneous processes for creating thioarsenides with crystalline counterparts explain the location of the glass-forming border in an As-Se system near the As4Se2 composition, while an activated decomposition process for creating layered As2Se3 structures is responsible for the nanomilling-driven molecular-to-network transition. [ABSTRACT FROM AUTHOR]

Polyamorphic transformations driven by high-energy mechanical ball milling (nanomilling) are recognized in a melt-quenched glassy alloy of tetra-arsenic triselenide (As4Se3). We employed XRPD analysis complemented by thermophysical heat-transfer and micro-Raman spectroscopy studies. A straightforward interpretation of the medium-range structural response to milling-driven reamorphization is developed within a modified microcrystalline model by treating diffuse peak-halos in the XRPD patterns of this alloy as a superposition of the Bragg-diffraction contribution from inter-planar correlations, which are supplemented by the Ehrenfest-diffraction contribution from inter-atomic and/or inter-molecular correlations related to derivatives of thioarsenide As4Sen molecules, mainly dimorphite-type As4Se3 ones. These cage molecules are merely destroyed under milling, facilitating the formation of a polymerized network with enhanced calorimetric heat-transfer responses. Disruption of intermediate-range ordering, due to weakening of the FSDP (the first sharp diffraction peak), accompanied by an enhancement of extended-range ordering, due to fragmentation of structural entities responsible for the SSDP (the second sharp diffraction peak), occurs as an interplay between medium-range structural levels in the reamorphized As4Se3 glass alloy. Nanomilling-driven destruction of thioarsenide As4Sen molecules followed by incorporation of their remnants into a glassy network is proved by micro-Raman spectroscopy. Microstructure scenarios of the molecular-to-network polyamorphic transformations caused by the decomposition of the As4Se3 molecules and their direct destruction under grinding are recognized by an ab initio quantum-chemical cluster-modeling algorithm. [ABSTRACT FROM AUTHOR]

Complete hierarchy of network amorphization scenarios initiated in AsxS100-x nanoarsenicals within As4S4-As4S3 cut-Sect. (50 ≤ x ≤ 57) is reconstructed employing materials-computational approach based on ab-initio quantum-chemical modeling code (CINCA). Under nanostructurization due to high-energy mechanical milling, the inter-crystalline transformations to nanoscopic β-As4S4 phase accompanied by appearance of covalent-network amorphous matrix are activated. General amorphization trend under nanomilling obeys tending from molecular cage-like structures to optimally-constrained covalent-bonded networks compositionally invariant with parent arsenical. The contribution of amorphization paths in nanoarsenicals is defined by their chemistry with higher molecular-to-network barriers proper to As4S3-rich alloys. The generated amorphous phase is intrinsically decomposed, possessing double-Tg relaxation due to stoichiometric (x = 40) and non-stoichiometric (x > 40) sub-networks, which are built of AsS3/2 pyramids and As-rich arrangement keeping (i) two separated As-As bonds derived from realgar-type molecules, (ii) two neighboring As-As bonds derived from pararealgar-type molecules or (iii) three neighboring As-As bonds in triangle-like geometry derived from dimorphite-type molecules. Compositional invariance of nanoamorphous phase is ensured by growing sequence of network-forming clusters with average coordination numbers Z in the row (As2S4/2,Z = 2.50) – (As3S5/2, Z = 2.55) – (As3S3/2, Z = 2.67). Diversity of main molecular-to-network amorphizing pathways in nanoarsenicals is reflected on the unified potential energy landscape specified for boundary As4S4 and As4S3 components. [ABSTRACT FROM AUTHOR]

The role of spatially-extended defect configurations in As-Se and Ge-Se glasses is identified using available theoretical predictions and positron annihilation lifetime spectroscopy as an experimental tool. It is shown that compositional trends in average positron lifetime do not coincide with molar volume evolution in the glasses of corresponding binary systems. The heteropolar As-Se covalent bonds are shown to affect the positron trapping modes more efficiently, than geometrical voids responsible for compositional deviation in molar volume. The same tendency is observed for Se-rich Ge-Se glasses. However, the Ge-rich glasses in so-called pseudo-self-organization domain, demonstrate an opposite trend in a favour of molecular clustering of edge- and corner-shared tetrahedral units. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]