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Empirical A-site cation substitution has advanced the stability and efficiency of hybrid organic-inorganic lead halide perovskites solar cells and the functionality of X-ray detectors. Yet, the fundamental mechanisms underpinning their unique performance remain elusive. This multi-modal study unveils the link between nanoscale structural dynamics and macroscopic optoelectronic properties in these materials by utilising X-ray diffuse scattering, inelastic neutron spectroscopy and optical microscopy complemented by state-of-the-art machine learning-assisted molecular dynamics simulations. Our approach uncovers the presence of dynamic, lower-symmetry local nanodomains embedded within the higher-symmetry average phase in various perovskite compositions. The properties of these nanodomains are tunable via the A-site cation selection: methylammonium induces a high density of anisotropic, planar nanodomains of out-of-phase octahedral tilts, while formamidinium favours sparsely distributed isotropic, spherical nanodomains with in-phase tilting, even when crystallography reveals cubic symmetry on average. The observed variations in the properties of dynamic nanodomains are in agreement with our simulations and are directly linked to the differing macroscopic optoelectronic and ferroelastic behaviours of these compositions. By demonstrating the influence of A-site cation on local nanodomains and consequently, on macroscopic properties, we propose leveraging this relationship to engineer the optoelectronic response of these materials, propelling further advancements in perovskite-based photovoltaics, optoelectronics, and X-ray imaging., Comment: Main text and supplementary information. Main text 16 pages, 4 figures. Supplementary information 42 pages, 36 figures

We provide evidence of strongly confined coherent acoustic phonons inside high quality factor phononic cavities that exhibit tailoredphonon potentials. Using GaAs/AlAs quasiperiodic superlattices, these functional phonon potentials are realized by adiabatically changing the layer thicknesses along the growth direction. Room temperature ultrafast vibrational spectroscopy reveals discrete phonon levels in the range of $\approx 96-101$ GHz. Additionally, we confirm that phononic cavities significantly retard the energy loss rate of the photoexcited carriers as evidenced by time-resolved photoluminescence measurements. These results highlight the potential of opto-phononic devices that can bridge the divide between phononics and optoelectronics by concurrently engineering electronic and phononic properties., Comment: In this version, we have incorporated a new section addressing the temporal dynamics of cavity phonons. Additionally, the analysis and discussion of time-resolved photoluminescence (TRPL) results have been enhanced

In optoelectronic devices such as solar cells and photodetectors, a portion of electron-hole pairs are generated as so called hot carriers with an excess energy that is typically lost as heat. The long standing aim to harvest this excess energy to enhance device performance has proven to be very challenging, largely due to the extremely short-lived nature of hot carriers. Efforts thus focus on increasing the hot carrier relaxation time, and on tailoring heterostructures that allow for hot-carrier extraction on short time- and length-scales. Recently, semiconductor nanowires have emerged as a promising system to achieve these aims, because they offer unique opportunities for heterostructure engineering as well as for potentially modified phononic properties that can lead to increased relaxation times. In this review we assess the current state of theory and experiments relating to hot-carrier dynamics in nanowires, with a focus on hot-carrier photovoltaics. To provide a foundation, we begin with a brief overview of the fundamental processes involved in hot-carrier relaxation, and how these can be tailored and characterized in nanowires. We then analyze the advantages offered by nanowires as a system for hot-carrier devices and review the status of proof-of-principle experiments related to hot-carrier photovoltaics. To help interpret existing experiments on photocurrent extraction in nanowires we provide modelling based on non-equilibrium Green's functions. Finally, we identify open research questions that need to be answered in order to fully evaluate the potential nanowires offer towards achieving more efficient, hot-carrier based, optoelectronic devices., Comment: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 8, 021309 (2021), and may be found at https://doi.org/10.1063/5.0038263

Hot carrier solar cells promise theoretical power conversion efficiencies far beyond the single junction limit. However, practical implementations of hot carrier solar cells have lagged far behind those theoretical predictions. Reciprocity relations for electro-luminescence from conventional single junction solar cells have been extremely successful in driving their efficiency ever closer to the theoretical limits. In this work, we discuss how the signatures of a functioning hot carrier device should manifest experimentally in electro-luminescence and dark $I-V$ characteristics. Hot carrier properties lead to deviations from the Shockley diode equation that is typical for conventional single junction solar cells. These deviations are directly linked to an increase in temperature of the carriers and therefore the temperature measured from electro-luminescence spectra. We also elucidate how the behaviour of hot carrier solar cells in the dark depends on whether Auger processes play a significant role, revealing a stark contrast between the regime of negligible Auger recombination (carrier conservation model) and dominant Auger recombination (Impact Ionization model) for hot carrier solar cells., Comment: 11 pages, 8 figures

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

Extraction of charge carriers from a hot carrier solar cell using energy selective contacts, and the impact on limiting power conversion efficiency is analyzed. It is shown that assuming isentropic conversion of carrier heat into voltage implies zero power output at all operating points. Under conditions of power output, lower voltages than in the isentropic case are obtained due to the irreversible entropy increase associated with carrier flow. This lowers the limiting power conversion efficiency of a hot carrier solar cell., Comment: 9 pages, 2 figures

Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron-hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron-hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We thus focus our analysis on the internal operation of the hot-carrier solar cell itself, and in this work do not consider the photon-mediated coupling to the sun. After deriving an expression for the voltage of a hot-carrier solar cell valid under conditions of both reversible and irreversible electrical operation, we identify separate contributions to the voltage from the thermoelectric effect and the photovoltaic effect. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. Our results help explore the fundamental limitations of hot-carrier solar cells, and provide a first step towards providing experimentalists with a guide to the optimal configuration of devices., Comment: 31 pages, 5 figures