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While the properties of β-Ga2O3 continue to be extensively studied for high-power applications, the effects of strong electric fields on the Ga2O3 microstructure and, in particular, the impact of electrically active native point defects have been relatively unexplored. We used cathodoluminescence point spectra and hyperspectral imaging to explore possible nanoscale movements of electrically charged defects in Ga2O3 vertical trench power diodes and observed the spatial rearrangement of optically active defects under strong reverse bias. These observations suggest an unequal migration of donor-related defects in β-Ga2O3 due to the applied electric field. The atomic rearrangement and possible local doping changes under extreme electric fields in β-Ga2O3 demonstrate the potential impact of nanoscale device geometry in other high-power semiconductor devices. [ABSTRACT FROM AUTHOR]

Ir is a common impurity in the edge-defined film-fed growth method used to produce high-power Ga2O3 device structures and growth substrates; yet, the effects of this deep level defect on carrier transport and recombination, particularly at high device processing and operating temperatures and at metal interfaces, have yet to be explored. The optical and electronic nature of Ir in Ga2O3 and at Ir/ Ga2O3 interfaces change on a near-nanometer to micrometer scale after nitrogen rapid thermal annealing; the understanding and control of which could lower defect-assisted tunneling, improve diode rectification, and preserve critical electric field strength. Depth-resolved cathodoluminescence spectroscopy, interface electronic current, and capacitance–voltage measurements reveal how this dominant impurity in bulk, edge-fed crystal growth diffuses, evolves with temperature, and impacts defect formation and Schottky barrier formation. [ABSTRACT FROM AUTHOR]

III-nitrides have revolutionized lighting technology and power electronics. Expanding the nitride semiconductor family to include heterovalent ternary nitrides opens up new and exciting opportunities for device design that may help overcome some of the limitations of the binary nitrides. However, the more complex cation sublattice also gives rise to new interactions with both native point defects and defect complexes that can introduce disorder on the cation sublattice. Here, depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy measurements of defect energy levels in ZnGeN2 combined with transmission electron microscopy and x-ray diffraction reveal optical signatures of mid-gap states that can be associated with cation sublattice disorder. The energies of these characteristic optical signatures in ZnGeN2 thin films grown by metal–organic chemical vapor deposition are in good agreement with multiple, closely spaced band-like defect levels predicted by density functional theory. We correlated spatially resolved optical and atomic composition measurements using spatially resolved x-ray photoelectron spectroscopy with systematically varied growth conditions on the same ZnGeN2 films. The resultant elemental maps vs defect spectral energies and intensities suggest that cation antisite complexes (ZnGe–GeZn) form preferentially vs isolated native point defects and introduce a mid-gap band of defect levels that dominate electron–hole pair recombination. Complexing of ZnGe and GeZn antisites manifests as disorder in the cation sub-lattice and leads to the formation of wurtzitic ZnGeN2 as indicated by transmission electron microscopy diffraction patterns and x-ray diffraction reciprocal space maps. These findings emphasize the importance of growth and processing conditions to control cation place exchange. [ABSTRACT FROM AUTHOR]

Laterally and depth-resolved cathodoluminescence spectroscopy (DRCLS) provided direct, nanoscale measurements of oxygen vacancy and oxygen vacancy complex distributions in undoped and Fe-doped SrTiO3 with high temperature electric field stress associated with dielectric resistance degradation. DRCLS provided direct and spatially resolved observation of oxygen vacancy migration driven by external electric fields from the anode to the cathode in undoped SrTiO3 between laterally separated electrodes, resulting in increased current leakage and lower thermal breakdown strength. DRCLS measurements through planar Pt electrodes after high temperature electric field cycling reveal pronounced oxygen vacancy depletion within the surface space region of the Pt/SrTiO3 Schottky barrier as predicted theoretically. These results provide a direct insight into the transient states impacting the conduction during the electromigration of the oxygen vacancies. The deconvolution of different peaks and their intensity variations relative to the direct bandgap provide methods to gauge the relative defect energetics of these gap states. These data are discussed in relation to providing a tool to further understand conduction in mixed ionic conductors. [ABSTRACT FROM AUTHOR]

SrTiO3 has many applications involving interfaces with other materials, but defects that affect the properties of SrTiO3 films can also play a significant role at its heterointerfaces and even at junctions with nonstoichiometric SrTiO3. Depth-resolved cathodoluminescence spectroscopy (DRCLS) combined with systematic cation Sr content reduction in SrxTiO3 ultrathin films grown on SrTiO3 showed an interplay of native point defects and electronic structure within the Sr-deficient film and how interplay extends tens of nanometers into the substrate below. Understanding how defects form and affect interface electronic structure during epitaxial growth is central to improving complex oxide devices. Controlling the balance of oxygen vacancy defects with strontium vacancies and other acceptor-like defects can improve control over free carrier densities. Likewise, control over nanoscale defect charge distributions can advance new device features such as two-dimensional hole gases and the performance of existing devices such as ferroelectric tunnel junctions. This study shows how DRCLS directly measures the relative densities and spatial distributions of multiple native defects within and extending away from nanoscale SrxTiO3/SrTiO3 junctions and how their interplay varies with controlled epitaxial growth. In turn, these growth-dependent defect variations can help guide SrTiO3 epitaxial growth with other complex oxides. [ABSTRACT FROM AUTHOR]

Proton irradiation decreases the doping concentration and increases the ideality factor and series resistance, but has very little effect on the Schottky barrier height in n-Gallium nitride Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher nonionizing energy loss. The displacement damage recovers during annealing. Comparison between Schottky diodes and high electron-mobility transistors suggests that the degradation in both types of devices is predominantly due to carrier removal and mobility degradation caused by radiation-induced defect centers in the crystal lattice, with interface disorder playing a relatively insignificant part in overall device degradation. Index Terms--Gallium (Ga) alloys, Schottky diodes, proton radiation effects.

1.8 MeV proton radiation-induced degradation in high electron mobility transistors with Si-doped [Al.sub.x][Ga.sub.1] - x N and thick GaN cap layers is studied up to a fluence of 1 x [10.sup.15] protons/[cm.sup.2]. The thick GaN cap layer reduces sheet charge modulation induced by the surface states, as it electrostatically separates the active device layers from the surface, thereby enhancing the device performance. The devices exhibit good tolerance up to [10.sup.14] protons/[cm.sup.2], with displacement damage being the primary degradation mechanism. Charged defect centers introduced by proton radiation in the active device layers degrade carrier mobility and sheet carrier density. Proton radiation alters the barrier height at the Schottky gate and increases the resistance of the thin film structure. Index Terms--Gallium alloys, modulation-doped field effect transistors (MODFETs), proton radiation effects.

The degradation of AlGaN/AlN/GaN high electron mobility transistors due to 1.8-MeV proton irradiation was measured at fluences up to 3 x [10.sup.15] [cm.sup.-2]. The devices have much higher mobility than AlGaN/GaN devices, but they possess similarly high radiation tolerance, exhibiting little degradation at fluences up to 1 x [10.sup.14] [cm.sup.-2]. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal are the primary damage mechanisms. The device degradation is observed as a decrease in the maximum transconductance, an increase in the threshold voltage, and a decrease in the drain saturation current. Index Terms--Gallium alloys, MODFETs, proton radiation effects.

A new study uses low energy electron-excited nanoscale luminescence spectroscopy to identify the AlGaN deep level defects in AlGaN/GaN high electron mobility transistor device structures.

The gallium vacancy is one of the dominant native point defects in β-Ga2O3, one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga2O3 surface. These techniques can help guide the understanding and control of dominant native point defects in Ga2O3. [ABSTRACT FROM AUTHOR]

A predicted type-II staggered band alignment with an approximately 1.4 eV valence band offset at the ZnGeN2/GaN heterointerface has inspired novel band-engineered III-N/ZnGeN2 heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown (ZnGe)1−xGa2xN2, for x = 0 and 0.06, and GaN using x-ray photoemission spectroscopy. The valence band of ZnGeN2 was found to lie 1.45–1.65 eV above that of GaN. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For (ZnGe)0.94Ga0.12N2 the value was determined to be 1.29 eV, ∼10%–20% lower than that of ZnGeN2. The experimental determination of the large band offset between ZnGeN2 and GaN provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices. [ABSTRACT FROM AUTHOR]

We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current-voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 1015 n/cm2 neutron threshold for Schottky barrier ideality factor increases, a 1015 n/cm2 fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 1016 n/cm2 neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation. [ABSTRACT FROM AUTHOR]