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The bismuth-halide Bi$_4$I$_4$ undergoes a structural transition around $T_P\sim 300$K, which separates a high-temperature $\beta$ phase ($T>T_P$) from a low-temperature $\alpha$ phase ($T

Superconductivity (SC) is absent in Cr-substituted BaFe$_{2}$As$_{2}$ (CrBFA), a well-established but poorly understood topic. Additionally, the suppression of the spin density wave transition temperature ($T_{\text{SDW}}$) in CrBFA and Mn-substituted BaFe$_{2}$As$_{2}$ (MnBFA) coincides as a function of Cr/Mn content, despite the distinct electronic effects of these substitutions. In this work, we employ angle-resolved photoemission spectroscopy (ARPES) and combined density functional theory plus dynamical mean field theory calculations (DFT+DMFT) to address the evolution of the Fermi surface (FS) and electronic correlations in CrBFA. Our findings reveal that incorporating Cr leads to an effective hole doping of the states near the FS, which is well described within the virtual crystal approximation (VCA). We analyzed the electronic band spectra with main $d_{yz}$-orbital character and found a fractional scaling of the imaginary part of self-energy as a function of the binding energy, a signature property of Hund's correlations. We conclude that CrBFA is a correlated electron system and the changes in the FS as a function of Cr are unrelated to the suppression of $T_{\text{SDW}}$. We suggest that the absence of SC is primarily due to the competition between Cr local moments and the Fe-derived itinerant spin fluctuations., Comment: 18 pages, 5 figures Submission to SciPost Physics

Chemical substitution is commonly used to explore new ground states in materials, yet the role of disorder is often overlooked. In Mn-substituted BaFe$_{2}$As$_{2}$ (MnBFA), superconductivity (SC) is absent, despite being observed for nominal hole-doped phases. Instead, a glassy magnetic phase emerges, associated with the $S=5/2$ Mn local spins. In this work, we present a comprehensive investigation of the electronic structure of MnBFA using angle-resolved photoemission spectroscopy (ARPES). We find that Mn causes a small and orbital-specific reduction of the electron pockets, only partially disrupting nesting conditions. Based upon the analysis of the spectral properties, we observe, for all bands, an increase in the electronic scattering rate as a function of Mn content. This is interpreted as increasing band incoherence, which we propose as the primary contributor to the suppression of the magnetic order in MnBFA. This finding connects the MnBFA electronic band structure properties to the glassy magnetic behavior observed in these materials and suggests that SC is absent because of the collective magnetic impurity behavior that scatters the Fe-derived excitations. Additionally, our analysis shows that the binding energy ($E_{B}$) dependence of the imaginary part of the self-energy [$\text{Im}\Sigma(E_{B})$] is best described by a fractional scaling ($\text{Im}\Sigma(E_{B})\propto\sqrt{-E_{B}}$). These results indicate that Mn tunes MnBFA into an electronic disordered phase between the correlated Hund's metal in BaFe$_{2}$As$_{2}$ and the Hund's insulator in BaMn$_{2}$As$_{2}$., Comment: main 8 pages, 5 figures + supp 5 pages, 4 figures

We investigate the formation of charge and spin ordering by starting from a non-interacting state and studying how it evolves in time under a Hamiltonian with finite electronic interactions. We consider the one-dimensional, half-filled extended Hubbard model, which we solve within time-dependent density matrix renormalization group. By employing linear finite-time quenches in the onsite and nearest-neighbor interactions, we find the existence of impulse, intermediate, and adiabatic regimes of time evolution. For the quenches we analyze, we observe that the adiabatic regime is reached with distinct ramping time scales depending on whether the charge density wave (CDW) or the spin density wave (SDW) is formed. The former needs to be slower than the latter to prevent entangled excited states from being accessed during the quench. More interestingly, in the intermediate regime, we observe an enhancement of the entanglement entropy with respect to its initial value, which precedes the formation of the CDW ordering; a similar enhancement is not seen in the quench towards SDW. Our findings also show that the breaking of the system integrability, by turning on the nearest-neighbor interactions, does not give rise to significant changes in the non-equilibrium behavior within the adiabatic approximation.

Developing reliable methods for modulating the electronic structure of the two-dimensional electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Here, we show that relatively simple surface preparation reconstructs the 2DEG of SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy (XPS) with ab initio calculations, we find that the modulation of the surface band structures is primarily attributed to the reorganization of the chemical composition. In addition, ARPES experiments demonstrate that vacuum ultraviolet (VUV) light can be efficiently employed to alter the band renormalization of the 2DEG system and control the electron-phonon interaction (EPI). Our study provides a robust and straightforward route to stabilize and tune the low-dimensional electronic structure via the chemical degeneracy of the STO surface.

The two-dimensional electron gas found at the surface of SrTiO$_3$ and related interfaces has attracted significant attention as a promising basis for oxide electronics. In order to utilize its full potential, the response of this 2DEG to structural changes and surface modification must be understood in detail. Here, we present a study of the detailed electronic structure evolution of the 2DEG as a function of sample temperature and surface step density. By comparing our experimental results with \textit{ab initio} calculations, we found that a SrO-rich surface layer is a prerequisite for electronic confinement. We also show that local structure relaxations cause a metal-insulator transition of the system around 135~K. Our study presents a new and simple way of tuning the 2DEG via surface vicinality and identifies how the operation of prospective devices will respond to changes in temperature.