Author: "Bruno Masenelli" - Searchworks@Jio Institute Digital Library Search Results

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107 results on '"Bruno Masenelli"'

1. Growth of Low-Temperature Epitaxial Lithium Niobate Thin Films and Guided-Wave Optical Properties

Author: Thanh Ngoc Kim Bui, Estelle Wagner, Rahma Moalla, William Maudez, Karim Dogheche, Romain Bachelet, Bruno Masenelli, Giacomo Benvenuti, Denis Rémiens, and El Hadj Dogheche
Subjects: LiNbO3, CBE, thin film, photonics, guided wave, Applied optics. Photonics, TA1501-1820
Abstract: LiNbO3 thin films are grown on a c-plane (0001) sapphire wafer at a relatively low substrate temperature by chemical beam vapor deposition (CBVD) in Sybilla equipment. Raman measurements only evidence the LiNbO3 phase, while HR-XRD diffractograms demonstrate a c-axis-oriented growth with only (006) and (0012) planes measured. The rocking curve is symmetric, with a full width at half maximum (FWHM) of 0.04°. The morphology and topography observed by SEM and AFM show very low roughness, with rms equaling 2.0 nm. The optical properties are investigated by a guided-wave technique using prism coupling. The ordinary refractive index (no) and extraordinary refractive index (ne) at different wavelengths totally match with the LiNbO3 bulk, showing the high microstructural quality of the film. The film composition is estimated by Raman and bi-refringence and shows a congruent or near-stoichiometric LiNbO3.
Published: 2024
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2. Control of light emission of quantum emitters coupled to silicon nanoantenna using cylindrical vector beams

Author: Martin Montagnac, Yoann Brûlé, Aurélien Cuche, Jean-Marie Poumirol, Sébastien J. Weber, Jonas Müller, Guilhem Larrieu, Vincent Larrey, Franck Fournel, Olivier Boisron, Bruno Masenelli, Gérard Colas des Francs, Gonzague Agez, and Vincent Paillard
Subjects: Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract: Abstract Light emission of europium (Eu3+) ions placed in the vicinity of optically resonant nanoantennas is usually controlled by tailoring the local density of photon states (LDOS). We show that the polarization and shape of the excitation beam can also be used to manipulate light emission, as azimuthally or radially polarized cylindrical vector beam offers to spatially shape the electric and magnetic fields, in addition to the effect of silicon nanorings (Si-NRs) used as nanoantennas. The photoluminescence (PL) mappings of the Eu3+ transitions and the Si phonon mappings are strongly dependent of both the excitation beam and the Si-NR dimensions. The experimental results of Raman scattering and photoluminescence are confirmed by numerical simulations of the near-field intensity in the Si nanoantenna and in the Eu3+-doped film, respectively. The branching ratios obtained from the experimental PL maps also reveal a redistribution of the electric and magnetic emission channels. Our results show that it could be possible to spatially control both electric and magnetic dipolar emission of Eu3+ ions by switching the laser beam polarization, hence the near field at the excitation wavelength, and the electric and magnetic LDOS at the emission wavelength. This paves the way for optimized geometries taking advantage of both excitation and emission processes.
Published: 2023
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3. Efficient Optimization of High‐Quality Epitaxial Lithium Niobate Thin Films by Chemical Beam Vapor Deposition: Impact of Cationic Stoichiometry

Author: Anna L. Pellegrino, Estelle Wagner, Francesca Lo Presti, William Maudez, Simon Kolb, Rashmi Rani, Antoine Bernard, Stephan Guy, Alban Gassenq, Marina Raevskaia, Christian Grillet, Rahma Moalla, Claude Botella, Romain Bachelet, Bruno Masenelli, Jean‐Marie Bluet, Sebastien Cueff, Patrick Chapon, Giacomo Benvenuti, and Graziella Malandrino
Subjects: chemical beam epitaxy, combinatorial, epitaxial films, lithium niobate, optical properties, structural properties, Physics, QC1-999, Technology
Abstract: Abstract Lithium niobate is a material of special interest for its challenging functional properties, which can suit various applications. However, high quality 200‐mm LixNb1‐xO3 thin film grown on sapphire substrate have never been reported so far which limits these potential applications. This paper reports the efficient optimization of high quality LiNbO3 thin film deposition on sapphire (001) substrate through chemical beam vapor deposition in a combinatorial configuration. With this technique, flow ratio of Li/Nb can be tuned from ≈0.25 to ≈2.45 on a single wafer. Various complementary characterizations (by means of diffraction, microscopy and spectroscopy techniques) have been performed at different areas of the film (different cationic ratios) in order to investigate the impact of the cationic stoichiometry deviation on the film properties. Close to cationic stoichiometry (LiNbO3), the epitaxial films are of high quality (single phase in spite of two in‐plane domains, low mosaicity of 0.04°, low surface roughness, refractive index and band gap close to bulk values). Deviating from the stoichiometry conditions, secondary phases are detected (LiNb3O8 for Nb‐rich flow ratios, and Li3NbO4 with partial amorphization for Li‐rich flow ratios). LiNbO3 films are of high interest for various key applications in data communications among others.
Published: 2023
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4. Pesticide-Free Robotic Control of Aphids as Crop Pests

Author: Virginie Lacotte, Toan NGuyen, Javier Diaz Sempere, Vivien Novales, Vincent Dufour, Richard Moreau, Minh Tu Pham, Kanty Rabenorosoa, Sergio Peignier, François G. Feugier, Robin Gaetani, Thomas Grenier, Bruno Masenelli, Pedro da Silva, Abdelaziz Heddi, and Arnaud Lelevé
Subjects: farming, robotics, aphid detection, laser-based neutralization, deep learning, image-based visual servoing, Agriculture (General), S1-972, Engineering (General). Civil engineering (General), TA1-2040
Abstract: Because our civilization has relied on pesticides to fight weeds, insects, and diseases since antiquity, the use of these chemicals has become natural and exclusive. Unfortunately, the use of pesticides has progressively had alarming effects on water quality, biodiversity, and human health. This paper proposes to improve farming practices by replacing pesticides with a laser-based robotic approach. This study focused on the neutralization of aphids, as they are among the most harmful pests for crops and complex to control. With the help of deep learning, we developed a mobile robot that spans crop rows, locates aphids, and neutralizes them with laser beams. We have built a prototype with the sole purpose of validating the localization-neutralization loop on a single seedling row. The experiments performed in our laboratory demonstrate the feasibility of detecting different lines of aphids (50% detected at 3 cm/s) and of neutralizing them (90% mortality) without impacting the growth of their host plants. The results are encouraging since aphids are one of the most challenging crop pests to eradicate. However, enhancements in detection and mainly in targeting are necessary to be useful in a real farming context. Moreover, robustness regarding field conditions should be evaluated.
Published: 2022
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5. Laser-based dew detection (Conference Presentation)

Author: Robin Gaetani, François Feugier, and Bruno Masenelli
Published: 2023
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6. Mapping of the Electrostatic Potentials in a Fully Processed Led Device with nm‐Scale Resolution by In Situ off‐Axis Electron Holography

Author: David Cooper, Christophe Licitra, Younes Boussadi, Badhise Ben‐Bakir, Bruno Masenelli, Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Programme 'Recherche Technologique du Base' du Ministère de l'Enseignement Supérieur et de la Recherche français
Subjects: In situ electron microscopy, electron holography, optoelectronics, electrostatic potentials, LED, General Materials Science, General Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract: International audience; The optoelectronic properties of a fully processed red emitting AlGaInP micro-diode device is measured using standard I-V and luminescence measurements. A thin specimen is then prepared for in situ transmission electron microscopy analysis by focused ion beam milling, then the changes of electrostatic potential as a function of applied forward bias voltage are mapped by off-axis electron holography. We demonstrate that the quantum wells in the diode sit on a potential gradient until the threshold forward bias voltage for light emission is reached; at which point the quantum wells are aligned at the same potential. From simulations, a similar effect for the band structure can be demonstrated, where the quantum wells are aligned at the same energy level, and contain electrons and holes that are available for radiative recombination at this threshold voltage. We demonstrate that off-axis electron holography can be used to directly measure the potential distribution in optoelectronic devices, and is a powerful tool to help better understand their performance and to improve simulations.
Published: 2023
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7. Reverse micelles synthesis of mesoporous Fe-doped CeO2 as UV/Visible photocatalyst for Ibuprofen degradation

Author: Tammaro, Olimpia, Marica, Chianese, Maryam, Hmoudah, Riccardo, Tesser, Fabris, Laura, Matteo Farnesi Camellone, Bruno, Masenelli, Vincenzo, Russo, Martino Di Serio, and Esposito, Serena
Published: 2022

8. Metallic oxide defect luminescent emission for application in solar cells and WLEDs

Author: Aleksandra Apostoluk, Zhang, Y., Thibaut Cornier, Paul Neumann, Bertrand Vilquin, Daniele, S., Bruno Masenelli, Christophe Théron, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), École supérieure de Chimie Physique Electronique de Lyon (CPE), and Apostoluk, Alexandra
Subjects: [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [PHYS] Physics [physics]
Abstract: International audience; The diversity of applications in optoelectronics, solar cells, light emitting diodes (LEDs), sensors and catalysis, as well as medical diagnostics profits from unique and attractive properties of and metal oxide nanostructures. In the present communication we report the fabrication methods and the properties of the metallic oxide nanostructures for solar cell and white light emitting diode applications (WLEDs). Zinc oxide and gallium oxide are wide bandgap semiconductors (3,37 eV and 4,8 eV for ZnO and beta-Ga2O3, respectively) and their nanostructures are of increasing interest because they have a variety of intrinsic defects that produce light emission in the visible range without the introduction of additional critical elements (doping). As technological costs and environmental concerns such as the use of critical metals or the issue of recycling become decision parameters, industrial fabrication methods should be cheap and harmless to humans, aquatic and terrestrial organisms, and the environment. To develop the studied nanostructures, hydrolysis method was used to synthesize ZnO nanoparticles and the Physical Vapor Deposition (PVD) for the fabrication of alpha-Ga2O3 and beta-Ga2O3. The obtained materials were characterized using various techniques. The XRD data and scanning electron microscopy (SEM)confirm the presence of nanoparticles and alpha and beta-Ga2O3 phases. Raman spectroscopy confirms the presence of some disorder for both ZnO and Ga2O3, characteristic of the presence of the defects. We discuss the effects of the nanoparticle size, the morphology and the surface stabilization on the enhancement of the PL QY in case of the ZnO NPs and of the PVD conditions for alpha- and beta-Ga2O3 thin layers. The photoluminescent emission of the studied materials is also examined, in order to achieve a perfect control of the defect emission to increase its efficiency. This opens up the prospect of synthesizing phosphors without rare earth for white LEDs, solar cells and whose spectrum can be tuned to render warm or cold white light, by a fabrication process easy to implement industrially and with a low environmental impact.
Published: 2021

9. Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Author: Jean-Paul Barnes, Névine Rochat, Badhise Ben Bakir, Christophe Licitra, Bruno Masenelli, Younes Boussadi, Philippe Ferrandis, Université de Toulon (UTLN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)
Subjects: Materials science, Photoluminescence, Passivation, Cathodoluminescence, Biophysics, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Biochemistry, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, TOF-SIMS, Etching (microfabrication), law, Reactive-ion etching, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, business.industry, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, InGaP, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Secondary ion mass spectrometry, AlGaInP, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Light emission, µLED, TRPL, 0210 nano-technology, business, micro-Photoluminescence, Light-emitting diode
Abstract: International audience; Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (µLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investigate these defects directly after MESA formation, by coupling optical characterization techniques together with Time-of-flight secondary ion mass spectrometry (TOF-SIMS) on AlGaInP square shaped pixels of different sizes formed by BCl3-based Reactive Ion Etching (RIE). It is found that for a 6×6 µm² pixel, the light emission homogeneity is largely impacted by the sidewall defects. From emission efficiency map deduced by temperature-dependent cathodoluminescence measurements, we estimate that 86% of the 6×6 µm² pixel exhibit a lower efficiency than the center. The carriers lifetime extracted from time-resolved photoluminescence (TRPL) measurements on larger pixel begins to decrease gradually at 3 µm from the sidewall due to non-radiative recombinations. On the other hand, the TOF-SIMS analysis shows that residues of boron and chlorine remain on the surface and sidewalls of the pixel after BCl3 etching. These results show the importance to characterize the µLEDs at the MESA step and the necessity to optimize the etching process and the passivation.
Published: 2021
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10. Visible luminescence improvement of ZnO/PAA nano-hybrids by silica coating

Author: T. Gard, Stéphane Daniele, Karine Masenelli-Varlot, Aleksandra Apostoluk, Y. Zhang, Bruno Masenelli, Christophe Theron, Bruno Canut, INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Laboratoire de Chimie, Catalyse, Polymères et Procédés, R 5265 (C2P2), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Lotus Synthesis SAS, Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, General Physics and Astronomy, Quantum yield, 02 engineering and technology, engineering.material, 010402 general chemistry, 01 natural sciences, Catalysis, chemistry.chemical_compound, Coating, silica coating, ZnO nanohybrid, PAA, Polyacrylic acid, Surfaces and Interfaces, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Surfaces, Coatings and Films, chemistry, Chemical engineering, engineering, visible luminescence, 0210 nano-technology, Luminescence, Layer (electronics), Visible spectrum
Abstract: International audience; The effect of a silica coating on the improvement of the visible light emission properties of ZnO/polyacrylic acid (PAA) nanohybrids is reported. The synthesized material consists of ZnO nanocrystals incorporated into the PAA mesospheres and then coated with silica. The silica amount can be controlled by the concentration of ammonia used in the sol-gel process as catalyst. The interaction between PAA and ammonia is crucial, the presence of the former tending to inhibit the catalytic action of the latter. We show that there is an optimum in the silica amount around the mesospheres, which leads to a drastic increase in the defect-related visible photoluminescence quantum yield of ZnO nanocrystals. A six-fold increase of the quantum yield can thus be achieved, reaching competitive values higher than 60%. This optimum is a compromise between a complete protective silica layer around the mesospheres and too thick a layer inducing inefficient absorption of excitation light by the coating.
Published: 2021
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11. Input of IBA for the study of plasmonic properties of doped ZnO nanocrystals

Author: Dominique Muller, Bruno Canut, Stéphane Daniele, Aleksandra Apostoluk, Y. Zhang, Bruno Masenelli, C. Bernard, INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie, Catalyse, Polymères et Procédés, R 5265 (C2P2), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), CCSD, Accord Elsevier, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Matériaux et nanosciences d'Alsace (FMNGE), and Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear and High Energy Physics, Materials science, Photoluminescence, Ion beam, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Analytical chemistry, Infrared spectroscopy, Nanoparticle, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 010402 general chemistry, 01 natural sciences, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS] Physics [physics], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Dopant, Doping, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0104 chemical sciences, Nanocrystal, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat]
Abstract: In this work, we used ion beam analyses (IBA) to characterize doped ZnO crystalline nanoparticles elaborated by different methods: (i) low energy cluster beam deposition (LECBD) for ZnO:Ga, (ii) metal organic framework (MOF) for ZnO:Li and (iii) sol-gel for ZnO/SiOx core-shell system. The analyses were performed either in RBS mode using 4He++ ions of 6 MeV energy (characterization of Ga and Si) or in NRA mode using 1H+ ions of 2.5 MeV energy (characterization of Li). The experimental data allowed determining the mean concentration of dopants (Ga, Li) or shell atoms (Si) and their areal masses. These elemental information, coupled with structural (TEM, X-ray) and optical (IR spectroscopy, photoluminescence) ones, were of prime importance permitting to better understand the optical properties of doped ZnO nanocrystals.
Published: 2020
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12. Evidence of O‐Polar (000-1) ZnO Surfaces Induced by In Situ Ga Doping

Author: Bruno Masenelli, Karine Masenelli-Varlot, Christèle Vilar, Corinne Sartel, Alain Lusson, Christophe Arnold, P. Galtier, Said Hassani, Julien Barjon, Gaëlle Amiri, Vincent Sallet, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Unité de recherche Pharmacologie-Toxicologie (UPT), Institut National de la Recherche Agronomique (INRA), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Consortium Lyon Saint-Etienne de Microscopie (CLYM), École normale supérieure - Lyon (ENS Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet [Saint-Étienne] (UJM), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Claude Bernard Lyon 1 (UCBL), École normale supérieure de Lyon (ENS de Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet - Saint-Étienne (UJM), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), and Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Subjects: 010302 applied physics, In situ, Materials science, Polarity (physics), Doping, Zno nanowires, 02 engineering and technology, doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Photochemistry, 01 natural sciences, Transmission electron microscopy, 0103 physical sciences, transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Polar, ZnO nanowires, General Materials Science, polarity, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, crystal facets, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2020
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13. Increasing the Electron Mobility of ZnO-Based Transparent Conductive Films Deposited by Open-Air Methods for Enhanced Sensing Performance

Author: Viet Huong Nguyen, Daniel Bellet, Bruno Masenelli, David Muñoz-Rojas, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and Masenelli, Bruno
Subjects: 010302 applied physics, Electron mobility, Fabrication, Materials science, business.industry, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Atmosphere, 0103 physical sciences, Optoelectronics, General Materials Science, Grain boundary, Thin film, 0210 nano-technology, business, Electrical conductor, ComputingMilieux_MISCELLANEOUS, Open air, Uv treatment
Abstract: The development of open-air, high-throughput, low-cost thin film fabrication techniques has immense potential and interest in optoelectronics. However, the oxygen-rich atmosphere associated with su...
Published: 2018
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14. Crystal Facet Engineering in Ga-Doped ZnO Nanowires for Mid-Infrared Plasmonics

Author: Alain Lusson, Christophe Delerue, François Jomard, Bruno Masenelli, P. Galtier, I. Lefebvre, Christèle Vilar, Corinne Sartel, Mohamed K. Hamza, Bruno Canut, Gaëlle Amiri, Said Hassani, and Vincent Sallet
Subjects: 010302 applied physics, Nanostructure, Photoluminescence, Materials science, business.industry, Doping, Nanowire, 02 engineering and technology, General Chemistry, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Rutherford backscattering spectrometry, 01 natural sciences, Crystal, chemistry.chemical_compound, chemistry, 0103 physical sciences, Optoelectronics, General Materials Science, Trimethylgallium, 0210 nano-technology, business
Abstract: The metal–organic chemical vapor deposition growth of various Ga-doped ZnO nanostructures for plasmonics is investigated, with a particular focus on the nanowire facet transformations induced by the addition of trimethylgallium in the gas phase. For nonintentionally doped spontaneous ZnO nanowires, the aspect ratio is strongly decreased due to residual Ga in the reactor, and the shape evolves rapidly toward Christmas-tree-like and hierarchical structures upon intentional Ga doping. Regarding ZnO/ZnO:Ga core–shell structures, a change of the smooth initial M-oriented facets occurs, with the development of {2021} surfaces, and further {1011} and {0001} surfaces. Interestingly, a similar evolution of the lateral roughness is observed in Au-catalyzed doped nanowires. High concentrations of Ga in the grown nanostructures are revealed by photoluminescence and confirmed by Rutherford backscattering spectrometry. First photoacoustic measurements show an optical absorption at 6 μm, evidencing that the degenerate...
Published: 2018
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15. Characterization of micro-pixelated InGaP/AlGaInP quantum well structures

Author: Bruno Masenelli, Philippe Ferrandis, Younes Boussadi, Jean-Paul Barnes, Névine Rochat, Christophe Licitra, Badhise Ben Bakir, Université de Toulon (UTLN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Département d'Optronique (DOPT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Subjects: Materials science, Photoluminescence, Pixel, business.industry, Homogeneity (statistics), Cathodoluminescence, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Characterization (materials science), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Diffusion (business), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Luminescence, Quantum well, ComputingMilieux_MISCELLANEOUS
Abstract: In this paper, we present a structural and optical study on micro-pixelated InGaP/AlGaInP quantum well structures with different pixel sizes down to 6 μm and a red emission at 636 nm. Temperature-dependent photoluminescence and cathodoluminescence cartographies were coupled to observe the emission homogeneity at the pixel scale and to study the impact of non-radiative recombination from sidewall defects. We deduced that micro-LEDs are impacted by surface recombination and we estimated the thermal quenching of photoluminescence related to defects. At low temperatures, a stronger luminescence was also observed from the pixel edges due to the diffusion coefficient or a geometric effect. Finally, the study was completed by a TOF-SIMS analysis in order to provide information about material composition homogeneity.
Published: 2020
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16. Room temperature optical response of zinc oxide nanowires synthesized by chemical bath deposition to toluene vapors

Author: Aleksandra Apostoluk, Vincent Consonni, Bruno Masenelli, Trung-Hieu Nguyen, François Gaillard, Bertrand Vilquin, Estelle Appert, and Romain Parize
Subjects: Diffraction, Photoluminescence, Materials science, Scanning electron microscope, Nanowire, Analytical chemistry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Zinc, 010402 general chemistry, 01 natural sciences, chemistry.chemical_compound, Materials Chemistry, Electrical and Electronic Engineering, Wurtzite crystal structure, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Toluene, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, 0210 nano-technology, Chemical bath deposition
Abstract: Zinc oxide (ZnO) nanowires were synthesized by a simple and cost-effective process, namely chemical bath deposition. X-ray diffraction (XRD) pattern clearly shows that the nanowires are well crystallized in the wurtzite hexagonal structure. Field-emission scanning electron microscope (FESEM) images show the formation of perfectly aligned and organized nanowires, with no defects visible on their surface. The diameter and length of nanowires is 65 and 850 nm, respectively. The room temperature UV-excited photoluminescence spectra show the excitonic band in the UV and a wide emission band centered in the visible. This excitonic and visible emission is studied in the presence of toluene vapors and the results demonstrate the change of the visible photoluminescence of ZnO nanowire array and that the material is able to adsorb toluene. Finally, the mechanism of toluene sensing is discussed.
Published: 2016
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17. (Invited) High Index Dielectric Nanoantennas for Light Management, Controlled Photoluminescence of Quantum Emitters, and Semiconductor-Based Plasmonics

Author: Olivier Boisron, Anne-Sophie Royet, Frank Fournel, Vincent Paillard, Clément Majorel, Aurélien Cuche, Richard Monflier, Peter R. Wiecha, Nicolas Chery, Arnaud Arbouet, Jean-Marie Poumirol, Pablo Acosta-Alba, Caroline Bonafos, Bruno Masenelli, Nicolas Mallet, F. Gourbilleau, Fuccio Cristiano, Sebastien Kerdiles, Hervé Rinnert, Christian Girard, Guilhem Larrieu, and Vincent Larrey
Subjects: Photoluminescence, Materials science, Semiconductor, business.industry, High index, Light management, Optoelectronics, Dielectric, business, Quantum, Plasmon
Abstract: Recently, an alternative to plasmonics emerged with high-refractive index dielectric nanostructures (e.g. silicon, n≈4 in the visible range), which offer the same kind of applications as nanostructures of noble metals, but with interesting advantages and despite lower field enhancement and confinement volume. Thus, they can be used to enhance and control light scattering efficiency, nonlinear emission, Purcell effect, etc. Furthermore, silicon nanostructures offer several key advantages: absorption losses are far weaker than in metals for wavelengths longer than the direct band gap, presence of strong magnetic resonances much more difficult to obtain in metals, and access to semiconductor (CMOS) technology for reproducible large-scale nanostructure fabrication. The first mean for controlling optical properties is given by manipulating Mie resonances instead of local surface plasmon resonances (LSPR). The Mie resonances can be adjusted by modifying the size, shape, and material of those nanostructures. The other mean is obtained by doping the nanostructures generating free carriers, thus leading to tunable LSPRs as function of dopant concentration (contrary to metals which have a fixed free electron concentrations). We present two examples describing the interest of using silicon nanoantennas, which are: (i) emission rate modification of quantum emitters placed in the silicon nanoantenna near-field (we focus also on the important role of both electric and magnetic components of light), and (ii) tunable Si-based plasmonics in the MIR to NIR spectral range by tuning dopant concentration and structural parameters of Si nanostructures. We show the effect of a Si nanoantenna on the spontaneous emission of quantum emitters placed in its vicinity. The emission rate corresponds to the local density of photonic states (LDOS), which is modified by the nanostructure. Thus, it can be controlled (enhancement or quenching) by properly designing the nanoantenna. For application in field-enhanced spectroscopy and single molecule detection, the goal is to obtain the highest enhancement. We discuss results of photoluminescence enhancement of various emitters placed around simple Si nanoantennas, with a special focus on the photoluminescence of Eu3+-doped thin films deposited on the Si nanoantennas. These rare earth ions exhibit both electric dipole (ED) and magnetic dipole (MD) transitions of nearly equal strength. We show that these ED and MD transitions are very sensitive to the electric and magnetic LDOS, respectively. This can be evidenced using Si nanoantennas, which support both electric and magnetic resonances of comparable strength. Due to the very high index, they also give the unique opportunity to separate and redistribute in the nearfield the energy of the magnetic and electric parts of the electromagnetic field, otherwise inextricably connected in the far field. In a second part, we present theoretical results about doped Si nanostructures based on the Green Dyadic Method initially used for studying optical properties in metal nanostructures. We show that cuboid Si nanostructures of a few tenths of nm in each dimension, with carrier concentration around 2.6 1021 cm-3, give LSPR close to the telecom wavelength at 1.54 μm. Experimentally, an original strategy has been developed to incorporate and active dopant at concentrations above 1020 cm-3. Such strategy involves out-of-equilibrium annealing by using nanosecond laser pulses and liquid phase epitaxy. We can thus expect tuning the LSPR frequency in the MIR to NIR range depending on the dopant concentration and the nanostructure shape. Preliminary experimental results are shown and compared to theory.
Published: 2020
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18. What limits the conductivity of ZnO:Al thin films? A new model to link electrical properties and deposition conditions

Author: Viet Huong Nguyen, Ulrich Gottlieb, Anthony Valla, Bruno Masenelli, Delfina Muñoz, Daniel Bellet, David Muñoz-Rojas, Lmgp, Labo, Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Informatique pour l'Entreprise et les Systèmes de Production (LIESP), Université Lumière - Lyon 2 (UL2)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire de Productique et Informatique des systèmes manufacturiers (PRISMA), Université Lumière - Lyon 2 (UL2)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Département des Technologies Solaires (DTS), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université Lumière - Lyon 2 (UL2)-École Centrale de Lyon (ECL), Université de Lyon, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Subjects: [CHIM.MATE] Chemical Sciences/Material chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

19. Crystal facet engineering in Ga-doped ZnO nanowires for Mid-IR plasmonics

Author: Vincent Sallet, Corinne Sartel, Said Hassani, Amiri, G., Alain Lusson, Galtier P, Isabelle Lefebvre, Christophe Delerue, Bruno Masenelli, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Physique - IEMN (PHYSIQUE - IEMN), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience
Published: 2018

20. ZnO nanowire facet transformation induced by Ga doping

Author: Vincent Sallet, Corinne Sartel, Said Hassani, Amiri, G., Alain Lusson, Galtier P, Isabelle Lefebvre, Christophe Delerue, Bruno Masenelli, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Physique-IEMN (PHYSIQUE-IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Physique - IEMN (PHYSIQUE - IEMN), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience
Published: 2018

21. Pressure-Induced Sublattice Disordering in SnO2 : Invasive Selective Percolation

Author: Patrice Mélinon, Patrick Hermet, Bruno Masenelli, Helainne T. Girao, Denis Machon, and Julien Haines
Subjects: Phase transition, Materials science, Chemical substance, Ab initio, Close-packing of equal spheres, General Physics and Astronomy, 02 engineering and technology, Decoupling (cosmology), 021001 nanoscience & nanotechnology, 01 natural sciences, Condensed Matter::Materials Science, symbols.namesake, Chemical physics, Percolation, 0103 physical sciences, symbols, Condensed Matter::Strongly Correlated Electrons, 010306 general physics, 0210 nano-technology, Raman spectroscopy, Single crystal
Abstract: SnO2 powders and single crystal have been studied under high pressure using Raman spectroscopy and ab initio simulations. The pressure-induced changes are shown to drastically depend on the form of the samples. The single crystal exhibits phase transitions as reported in the literature, whereas powder samples show a disordering of the oxygen sublattice in the first steps of compression. This behavior is proposed to be related to the defect density, an interpretation supported by ab initio simulations. The link between the defect density and an amorphouslike Raman signal is discussed in terms of the invasive percolation of the anionic sublattice. The resistance of the cationic sublattice to the disorder propagation is discussed in terms of cation close packing. This result on SnO2 may be extended to other systems and questions a “traditional” crystallographic description based on polyhedra packing, as a decoupling between both sublattices is observed.
Published: 2018
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22. Pressure-Induced Sublattice Disordering in SnO_{2}: Invasive Selective Percolation

Author: Helainne T, Girao, Patrick, Hermet, Bruno, Masenelli, Julien, Haines, Patrice, Mélinon, and Denis, Machon
Abstract: SnO_{2} powders and single crystal have been studied under high pressure using Raman spectroscopy and ab initio simulations. The pressure-induced changes are shown to drastically depend on the form of the samples. The single crystal exhibits phase transitions as reported in the literature, whereas powder samples show a disordering of the oxygen sublattice in the first steps of compression. This behavior is proposed to be related to the defect density, an interpretation supported by ab initio simulations. The link between the defect density and an amorphouslike Raman signal is discussed in terms of the invasive percolation of the anionic sublattice. The resistance of the cationic sublattice to the disorder propagation is discussed in terms of cation close packing. This result on SnO_{2} may be extended to other systems and questions a "traditional" crystallographic description based on polyhedra packing, as a decoupling between both sublattices is observed.
Published: 2018

23. Deposition of hafnium/zirconium oxides solid solution by reactive magnetron sputtering for fast and low power ferroelectric devices

Author: Jordan Bouaziz, Bertrand Vilquin, Pédro Rojo Romeo, Nicolas Baboux, Bruno Masenelli, Bouaziz, Jordan, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon, INL - Hétéroepitaxie et Nanostructures (INL - H&N), INL - Nanophotonique (INL - Photonique), INL - Dispositifs Electroniques (INL - DE), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)
Subjects: [CHIM.MATE] Chemical Sciences/Material chemistry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience; IoT sensor node requires edge computing which means processing data at the source. These systems need highly energy efficient microprocessor units (MCU) using embedded non-volatile memories (eNVM). However eFLASH technology is limited by low write speed, high power and low endurance. Alternative fast, low power and high endurance eNVM could greatly enhance energy efficiency. FeRAM has the highest endurance of all emerging NVMs. However perovskite based eFeRAM is incompatible with Si CMOS, it does not easily scale and has manufacturability and cost issues. Recently discovered, doped HfO2 [1] is a promising candidate to solve these problems. HfO2 processes are already integrated in Si CMOS industry and its ferroelectric properties are adequate for using oxide layer thinner than 10nm. Nevertheless some of its properties should be improved for industrial applications. As a consequence, the nucleation and stabilization of the ferroelectric phase (fphase) has to be understood; the nucleation of the f-phase is attributed to the polar orthorhombic phase (o-III phase), but other phases are generally present inside the oxide after the growth due to stabilization issues [2]. Particularly, the formation of the monoclinic phase has to be avoided to enhance ferroelectricity. The presence of the fphase has often been studied by Atomic Layer Deposition (ALD) [3].However, the electrodes are most of the time made by sputtering, and industrial processes to separate Hf and Zr are usually expensive. It could be interesting to have only one process where the separation of Hf and Zr is not needed. Also, sputtering using only one target like Hf/Zr or HfO2/ZrO2 could ease co-sputtering for the realization of 1% La-doped Hf0,5Zr0,5O2 as it shows a low annealing temperature and a very promising endurance and remanent polarization [4]. In 2015, Park et al. [3] wrote: “So far, it seems critical that the dielectric layer is deposited in the amorphous phase and crystallized in a later annealing step.” However, to our knowledge, there was no clear evidence of the phenomenon as films are generally grown amorphous by ALD. In this work, we grow ferroelectric (Hf,Zr)O2 solid solutions made by reactive RF magnetron sputtering at room temperature and by using only one target. Changing the conditions in the sputtering chamber lead to crystalline or amorphous films at room temperature. We characterize the films by different technics such as X-rays Diffraction and Positive Up Negative Down (PUND) electrical characterization and we give details about the properties of our films and how one can improve their properties. [1] T.S. Böscke, et al., Appl. Phys. Lett. 99, 102903 (2011).[2] M.H. Park, et al., Nanoscale. 10, 716–725 (2018).[3] M.H. Park, et al., Adv. Mater. 27, 1811–1831 (2015)[4] A.G. Chernikovaet al., ACS Appl. Mater. Interfaces. 10 (2018) 2701–2708.
Published: 2018

24. Zinc oxide nanoparticles for improvement of thin film photovoltaic structures’ efficiency through down shifting conversion

Author: Bruno Masenelli, Zbigniew Lisik, Maciej Sibiński, Katarzyna Znajdek, Yao Zhu, Przemysław Sędzicki, Aleksandra Apostoluk, Łódź University of Technology, Department of Semiconductor and Optoelectronics Devices (DSOD), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Laboratoire de physique subatomique et des technologies associées ( SUBATECH ), IMT Atlantique Bretagne-Pays de la Loire ( IMT Atlantique ) -Institut National de Physique Nucléaire et de Physique des Particules du CNRS ( IN2P3 ) -Centre National de la Recherche Scientifique ( CNRS ) -Université de Nantes ( UN ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), and Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS )
Subjects: Materials science, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Nanoparticle, Nanotechnology, 02 engineering and technology, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], Photovoltaics, 0103 physical sciences, Deposition (phase transition), General Materials Science, Plasmonic solar cell, Electrical and Electronic Engineering, Thin film, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Radiation, business.industry, Photovoltaic system, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Luminescence, business, [ PHYS.COND ] Physics [physics]/Condensed Matter [cond-mat], Visible spectrum
Abstract: The paper presents the idea to improve the performance of thin film photovoltaic cells by a light capture enhancement through the introduction of down shifting energy converters. Luminescent down shifting layers convert high-energy photons (UV light) into low-energy ones (visible light), which are more efficient in a photovoltaic conversion. For this purpose, the application of a thin layer composed of zinc oxide (ZnO) nanoparticles deposited onto a thin film solar cell is proposed. The paper presents both experimental and theoretical results of this approach. Conducted investigations include an analysis of ZnO nanoparticle layers, deposited in two independent technology methods. The results showed that ZnO nanoparticles have a great potential of application as down converting layers and can be implemented to improve the efficiency of photovoltaic cells, especially in the field of thin film PV structures. The proposed new deposition method can potentially be used in some industrial photovoltaic applications.
Published: 2017
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25. Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst

Author: Gilles Patriarche, Michel Gendry, Amaury Mavel, Philippe Regreny, Bruno Masenelli, Nicolas Chauvin, INL - Hétéroepitaxie et Nanostructures ( INL - H&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Spectroscopies et Nanomatériaux (INL - S&N), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Silicon, [ SPI.MAT ] Engineering Sciences [physics]/Materials, Nucleation, Nanowire, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 01 natural sciences, Catalysis, [SPI.MAT]Engineering Sciences [physics]/Materials, Inorganic Chemistry, Pedestal, 0103 physical sciences, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure, 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [ PHYS ] Physics [physics], [ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics], 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Chemical engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Indium, Molecular beam epitaxy
Abstract: The nucleation and the structural and optical properties of InP nanowires (NWs) grown on Si(111) by molecular beam epitaxy using the vapor-liquid-solid method with gold-indium droplets as catalyst are investigated as a function of the temperature of the formation of the catalyst droplets and of the NW growth time. It is highlighted a complex behavior of the gold-indium catalyst droplets depending on the temperature. It is then shown than an InP pyramid-like pedestal is formed prior to the NW growth. When the temperature of formation of the catalyst droplets is lower than 550 °C, almost only vertically standing pure wurtzite InP NWs are grown on Si(111).
Published: 2017
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26. ZnO Nanostructures for Mid-IR Plasmonics

Author: Jean Bluet, Bruno Masenelli, Karine Masenelli-Varlot, Bruno Canut, Matthieu Bugnet, Patrice Mélinon, Cyril Langlois, M.K.H. Taha, Thierry Epicier, and O. Boisron
Subjects: Nanostructure, Materials science, Nanotechnology, Plasmon, Doped nanocrystals
Published: 2016
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27. Intense visible emission from ZnO/PAAX (X = H or Na) nanocomposite synthesized via a simple and scalable sol-gel method

Author: Bruno Masenelli, P. Gautier, Karine Masenelli-Varlot, A. Valette, Jean-Marie Bluet, Thibaut Cornier, L. Omar, Yao Zhu, Stéphane Daniele, Aleksandra Apostoluk, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), IRCELYON-C'Durable (CDURABLE), Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Consortium Lyon Saint-Etienne de Microscopie (CLYM), École normale supérieure de Lyon (ENS de Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet - Saint-Étienne (UJM), Institut de recherches sur la catalyse et l'environnement de Lyon ( IRCELYON ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), IRCELYON-Ingéniérie, du matériau au réacteur ( ING ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ) -Université Claude Bernard Lyon 1 ( UCBL ), IRCELYON-Chimie durable: du fondamental à l'application ( CDFA ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), École normale supérieure - Lyon (ENS Lyon)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet [Saint-Étienne] (UJM)
Subjects: Materials science, Photoluminescence, Chalcogenide, Quantum yield, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Article, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, [ CHIM.CATA ] Chemical Sciences/Catalysis, [SPI]Engineering Sciences [physics], Sol-gel, Multidisciplinary, Nanocomposite, Heterojunction, [CHIM.CATA]Chemical Sciences/Catalysis, 021001 nanoscience & nanotechnology, [SDE.ES]Environmental Sciences/Environmental and Society, 0104 chemical sciences, Nanocrystal, chemistry, Chemical engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Luminescence, [ SDE.ES ] Environmental Sciences/Environmental and Society
Abstract: Intense visible nano-emitters are key objects for many technologies such as single photon source, bio-labels or energy convertors. Chalcogenide nanocrystals have ruled this domain for several decades. However, there is a demand for cheaper and less toxic materials. In this scheme, ZnO nanoparticles have appeared as potential candidates. At the nanoscale, they exhibit crystalline defects which can generate intense visible emission. However, even though photoluminescence quantum yields as high as 60% have been reported, it still remains to get quantum yield of that order of magnitude which remains stable over a long period. In this purpose, we present hybrid ZnO/polyacrylic acid (PAAH) nanocomposites, obtained from the hydrolysis of diethylzinc in presence of PAAH, exhibiting quantum yield systematically larger than 20%. By optimizing the nature and properties of the polymeric acid, the quantum yield is increased up to 70% and remains stable over months. This enhancement is explained by a model based on the hybrid type II heterostructure formed by ZnO/PAAH. The addition of PAAX (X = H or Na) during the hydrolysis of ZnEt2 represents a cost effective method to synthesize scalable amounts of highly luminescent ZnO/PAAX nanocomposites.
Published: 2016
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28. Microstructural and Optical Properties of Nitrogen Doped ZnO Nanowires

Author: Corinne Sartel, Abdel Meftah, Alain Lusson, V. Sallet, Bruno Masenelli, P. Galtier, Ahmed Souissi, Jean-Marie Bluet, Meherzi Oueslati, and Nadia Hanèche
Subjects: Materials science, Analytical chemistry, Nanowire, chemistry.chemical_element, Chemical vapor deposition, Acceptor, Nitrogen, symbols.namesake, chemistry, Impurity, Transmission electron microscopy, symbols, Metalorganic vapour phase epitaxy, Raman spectroscopy
Abstract: Nanowires with different nitrogen concentrations were grown by Metal-Organic Chemical Vapor Deposition (MOCVD) using DEZn, N2O and NH3as zinc, oxygen and nitrogen doping sources respectively. Low temperature photoluminescence, Raman spectroscopy and Transmission Electron Microscopy are combined to study the incorporation of nitrogen in the wires. The observation of donor-acceptor pair band confirms that the incorporation nitrogen in ZnO nanowires is responsible for the creation of acceptor centers. The additional peaks observed in Raman are correlated to nano-sized inter-atomic distance fluctuations observed in TEM. These domains combined with a resonance effect are probably the explanation of the huge Raman cross section observed for the impurity related peaks.
Published: 2012
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29. Enhancement of electric and magnetic dipole transition of rare-earth-doped thin films tailored by high-index dielectric nanostructures

Author: Aurélien Cuche, Guilhem Larrieu, Olivier Boisron, Vincent Paillard, Christian Girard, Clément Majorel, Arnaud Arbouet, Bruno Masenelli, Peter R. Wiecha, Aurélie Lecestre, Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Nano-Optique et Nanomatériaux pour l'optique ( CEMES-NeO ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique ( CNRS ), INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Institut Lumière Matière [Villeurbanne] ( ILM ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ), Équipe Matériaux et Procédés pour la Nanoélectronique ( LAAS-MPN ), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées
Subjects: Photoluminescence, Silicon, Magnetic dipole transition, FOS: Physical sciences, Physics::Optics, chemistry.chemical_element, Dielectric, 01 natural sciences, 010309 optics, Condensed Matter::Materials Science, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Electrical and Electronic Engineering, Thin film, Engineering (miscellaneous), Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [ PHYS ] Physics [physics], [ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Doping, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Atomic and Molecular Physics, and Optics, chemistry, Optoelectronics, Nanorod, business, Magnetic dipole
Abstract: We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few nanometer thin film of rare-earth ion doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resolution of a few hundred nanometers, our approach appeals by its simplicity and high signal-to-noise ratio. We demonstrate our technique at the example of single silicon nanorods and dimers, in which we find a significant separation of electric and magnetic near-field contributions. Our method paves the way towards the efficient and rapid characterization of the electric and magnetic optical response of complex photonic nanostructures., 10 pages and 7 figures
Published: 2019
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30. Probing the excitonic emission of ZnO nanoparticles using UV–VUV excitations

Author: Patrice Mélinon, D. Tainoff, Christophe Dujardin, P. Martin, Nikita Fedorov, Bruno Masenelli, Andrei Belsky, Gilles Ledoux, David Amans, Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Laboratoire de Physico-Chimie des Matériaux Luminescents (LPCML), Centre d'Etudes Lasers Intenses et Applications (CELIA), Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Bordeaux (UB), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and Université de Bordeaux (UB)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, Exciton, Ultra-high vacuum, Biophysics, Synchrotron radiation, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Biochemistry, Molecular physics, Condensed Matter::Materials Science, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Acceptor, Crystallographic defect, Atomic and Molecular Physics, and Optics, Optoelectronics, 0210 nano-technology, Luminescence, business, Excitation
Abstract: This study deals with the influence of the excitation (UV-lamp, UV-laser and VUV synchrotron radiation) on the 3.31 eV band of ZnO microcrystals and of variously treated nanoparticles. The nanoparticles are synthesized in ultra high vacuum condition and their stoichiometry and crystallinity can be controlled. This provides an efficient way to probe the influence of these factors on the excitonic emission. The energy and intensity of the excitation have a strong influence on the excitonic luminescence and particularly on the 3.31 eV emission band. The result of these experiments are used to probe the origins of this band which is found to be not linked to any surface phenomena. Indeed, the only way to fully explain our results is to consider that the 3.31 eV band involve the superposition of two emissions features: the first due to acceptor defects and the other originates form the LO phononic repliqua of the free exciton.
Published: 2009
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31. Is a Highly Ionic Material Still Ionic as a Nanoparticle?

Author: Patrice Mélinon, Bruno Masenelli, and D. Nicolas
Subjects: Ions, Models, Molecular, Materials science, Relaxation (NMR), Molecular Conformation, Ionic bonding, Nanoparticle, Gadolinium, General Chemistry, Crystal structure, Ion, Biomaterials, Dipole, Sesquioxide, Models, Chemical, Computational chemistry, Chemical physics, Physics::Atomic and Molecular Clusters, Nanoparticles, Thermodynamics, Yttrium, General Materials Science, Density functional theory, Biotechnology
Abstract: The evolution of ionicity with size in highly ionic nanoparticles is investigated in small sesquioxide clusters. Representative clusters (Y2O3)N (N < 50) are theoretically analyzed by first-principle calculations within the density functional theory within the local-density approximation (DFT-LDA) framework and compared to experimental results obtained in an ultrahigh vacuum environment. By studying the structural relaxation and the electronic density of states as a function of size, the respective roles of ionicity and covalency are elucidated. For compounds as ionic as rare earth sesquioxides, the highly ionic bond essentially governs and preserves the crystalline structure. Particular attention is paid to the mechanism responsible for the surface relaxation. The role of the ions at the corners and edges appears prominent, especially in reducing the dipole carried by the particles. Eventually, contrary to the observations and computations concerning ionic surfaces, the mean ionicity remains constant as the size is reduced. It emphasizes that the description of highly ionic nanoparticles cannot be directly inferred from knowledge regarding the ionic surface reconstruction.
Published: 2008
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32. Crystallinity, Stoichiometry, and Luminescence of High Quality ZnO Nanoclusters

Author: G. Guiraud, Bruno Masenelli, Patrice Mélinon, O. Boisron, and Dimitri Tainoff
Subjects: Materials science, Analytical chemistry, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Nanoclusters, Crystallinity, General Energy, Cooling rate, Quality (physics), Cluster (physics), Physical and Theoretical Chemistry, Luminescence, Stoichiometry, Deposition (law)
Abstract: Quasiperfect ZnO nanoclusters (∼6 nm in diameter) are synthesized in non steady state by an original process (the low energy cluster beam deposition, LECBD). The drastic cooling rate (1010 K/s) of ...
Published: 2008
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33. Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires

Author: Amaury Mavel, Nicolas Chauvin, Bruno Masenelli, Gilles Patriarche, Michel Gendry, Denis Machon, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut Lumière Matière [Villeurbanne] (ILM), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), INL - Hétéroepitaxie et Nanostructures ( INL - H&N ), Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de Physique de la Matière Condensée et Nanostructures ( LPMCN ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, Hydrostatic pressure, Nanowire, Bioengineering, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Pressure coefficient, Molecular physics, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, [ SPI ] Engineering Sciences [physics], General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure, 010302 applied physics, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Intensity (physics), Crystallography, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, Deformation (engineering), Hydrostatic equilibrium, 0210 nano-technology
Abstract: The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.
Published: 2016
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34. ZnO nanoparticle layers as down-shifting converters for the thin-film photovoltaic structures

Author: Znajdek, K., Sibinski, M., Lisik, Z., Aleksandra (Alexandra) Apostoluk, Yao Zhu, Bruno Masenelli, Inl, Laboratoire INL UMR5270, Łódź University of Technology, Department of Semiconductor and Optoelectronics Devices (DSOD), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Laboratoire des propriétés optiques des matériaux et applications ( LPOMA ), Université d'Angers ( UA ) -Centre National de la Recherche Scientifique ( CNRS ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Ecole Nationale de l'Aviation Civile ( ENAC ), INL - Spectroscopies et Nanomatériaux ( INL - S&N ), and Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL )
Subjects: [SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI ] Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: 6th-10th June 2016; International audience; no abstract
Published: 2016

35. Playing with carbon and silicon at the nanoscale

Author: Bruno Masenelli, Florent Tournus, Patrice Mélinon, and A. Perez
Subjects: Nanostructure, Materials science, Silicon, Mechanical Engineering, Nanowire, Stacking, chemistry.chemical_element, Nanotechnology, General Chemistry, Condensed Matter Physics, Smart material, Condensed Matter::Materials Science, chemistry.chemical_compound, chemistry, Mechanics of Materials, Silicon carbide, General Materials Science, Nanometre, Nanoscopic scale
Abstract: Because of its superior properties silicon carbide is one of the most promising materials for power electronics, hard- and biomaterials. In the solid phase, the electronic and optical properties are controlled by the stacking of double layers of Si and C atoms. In thin films, a change in the stacking order often requires stress, which can be achieved naturally in systems with nanometre length scale. For this reason, nanotubes, nanowires and clusters can be used as building blocks for the synthesis of novel materials. Furthermore, playing at the nanometre length scale enables the nature of the SiC bonding to be modified, which is of prime importance for atomic engineering of nanostructures. In this review, emphasis is placed on the theoretical principles associated with SiC cage-like clusters and experimental work resulting from them.
Published: 2007
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36. Synchrotron studies on silicon clathrates: Highly stable nanostructured materials

Author: A. Aouizerat, Alfonso San-Miguel, J. P. Itié, Sakura Pascarelli, Pierre Toulemonde, Bruno Masenelli, Tetsuji Kume, Alexandre Merlen, S. Le Floch, Olivier Mathon, Shoji Yamanaka, Giuliana Aquilanti, T. Le Bihan, Florent Tournus, Laboratoire de Physique de la Matière Condensée et Nanostructures ( LPMCN ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), European Synchrotron Radiation Facility ( ESRF ), Institut de minéralogie et de physique des milieux condensés ( IMPMC ), Université Pierre et Marie Curie - Paris 6 ( UPMC ) -IPG PARIS-Université Paris Diderot - Paris 7 ( UPD7 ) -Centre National de la Recherche Scientifique ( CNRS ), Department of Applied Chemistry ( Faculty of Engineering, Hiroshima University ), Hiroshima University, Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, European Synchrotron Radiation Facility (ESRF), Institut de minéralogie et de physique des milieux condensés (IMPMC), Université Pierre et Marie Curie - Paris 6 (UPMC)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Department of Applied Chemistry (Faculty of Engineering, Hiroshima University), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear and High Energy Physics, Materials science, Absorption spectroscopy, Silicon, Clathrate hydrate, Analytical chemistry, chemistry.chemical_element, Mineralogy, 02 engineering and technology, engineering.material, 01 natural sciences, Diamond anvil cell, PACS: 61.50.Ks, 61.48.+c, 0103 physical sciences, 010306 general physics, Instrumentation, Nanomaterials, [PHYS]Physics [physics], [ PHYS ] Physics [physics], Extended X-ray absorption fine structure, Diamond, 021001 nanoscience & nanotechnology, XANES, X-ray diffraction, EXAFS, chemistry, X-ray crystallography, engineering, 0210 nano-technology
Abstract: International audience; We have pushed the limits of X-ray absorption spectroscopy under high pressure in order to study the stability of the Ba intercalated silicon clathrate. EXAFS experiments at the Ba K-edge have been performed in the step by step mode up to a pressure of 14.5 GPa using the Paris–Edinburgh cell with sintered diamond anvils. XANES experiments at the Ba L-III edge were done in an energy dispersive set-up using hollowed diamond anvil cells up to a pressure of 20 GPa. Combining the obtained results with high pressure X-ray diffraction we demonstrate the high stability of the Ba intercalated silicon clathrates. Our conclusions could be extended to other clathrate systems.
Published: 2005
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37. Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties

Author: Patrice Mélinon, Christophe Longeaud, Anne-Marie Flank, P. Roca i Cabarrocas, Bruno Masenelli, S. Vignoli, Laboratoire de génie électrique de Paris ( LGEP ), Université Paris-Sud - Paris 11 ( UP11 ) -Université Pierre et Marie Curie - Paris 6 ( UPMC ) -SUPELEC-Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de génie électrique de Paris (LGEP), and Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Amorphous silicon, Materials science, Absorption spectroscopy, Silicon, Coordination number, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Paracrystalline, 01 natural sciences, Condensed Matter::Materials Science, symbols.namesake, chemistry.chemical_compound, 0103 physical sciences, [CHIM]Chemical Sciences, General Materials Science, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Photoconductivity, Nanocrystalline silicon, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, symbols, 0210 nano-technology, Raman spectroscopy
Abstract: International audience; A set of hydrogenated nanostructured silicon films consisting of Si nanoparticles with a dense phase embedded in an amorphous matrix are analysed by means of several spectroscopic tools. Medium and short range order are determined by Raman spectroscopy and the average coordination versus the hydrogen content is measured from x-ray absorption spectroscopy. The improvement of transport properties such as the normalized photoconductivity with respect to that of hydrogenated amorphous silicon is explained by an inhomogeneous distribution of constraints in the samples. Our results on the order at different scales agree well with the paracrystalline model and suggest a well relaxed host matrix.
Published: 2005
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38. Towards non-van der Waals C60-based materials

Author: Michel Broyer, Anne-Marie Flank, Alain Perez, Xavier Blase, Bruno Masenelli, Pierre Lagarde, Florent Tournus, Patrice Mélinon, and M. Pellarin
Subjects: Materials science, Extended X-ray absorption fine structure, Mechanical Engineering, Binding energy, Condensed Matter Physics, Molecular physics, symbols.namesake, Chemical bond, Mechanics of Materials, Ab initio quantum chemistry methods, symbols, General Materials Science, Density functional theory, Atomic physics, van der Waals force, Bond energy, Local-density approximation
Abstract: We investigated the atomic bonding of Si and C 60 theoretically (by ab initio calculations within the local density approximation to the density functional theory) and compared the predictions to experimental X-ray absorption results from Si-C 60 films synthesized by the cluster beam deposition technique. Calculations predicted that Si preferentially binds to hexagon–hexagon edges. The geometry of the Si bound to the pentagonal face is metastable. The bond energy is in each case higher than the typical van der Waals bond. Extended X-ray absorption fine structure (EXAFS) measurements revealed Si is bound to the pentagonal face of two C 60 molecules in (C 60 ) m Si n clusters deposits. Both theoretical and experimental investigations showed that the polymerisation of C 60 -Si clusters is possible, leading to nanostructured C 60 -based materials with high binding energy.
Published: 2004
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39. Nanostructured films from (C60)nSim clusters

Author: Alain Perez, Xavier Blase, Patrice Mélinon, Bruno Masenelli, M. Pellarin, Florent Tournus, and Michel Broyer
Subjects: Fullerene, Extended X-ray absorption fine structure, Chemistry, Binding energy, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Molecular physics, Surfaces, Coatings and Films, symbols.namesake, Ab initio quantum chemistry methods, symbols, Density functional theory, Local-density approximation, Bond energy, Atomic physics, van der Waals force
Abstract: We investigate the bonding of Si and C 60 both theoretically (by ab initio calculations within the local density approximation to the density functional theory) and experimentally. Starting from the laser ablation of Si and C 60 followed by a supersonic expansion, we first show that it is possible to obtain small stable (C 60 ) n Si m clusters (with n ≈ m ). We then investigate the configuration of the clusters by means of extended X-ray absorption fine structure (EXAFS) measurements and show that Si binds to the pentagonal face of the fullerenes. According to our calculations, such a structure is predicted to be metastable. The calculated bond energy is higher than that of the typical van der Waals bond. It highlights the potential of the SiC 60 bond to synthesize nanostructured C 60 -based materials with high binding energy.
Published: 2004
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40. From Small Fullerenes to Superlattices : Science and Applications

Author: Patrice Melinon, Bruno Masenelli, Patrice Melinon, and Bruno Masenelli
Subjects: Fullerenes, Nanoscience, Nanostructures
Abstract: Recently, carbon and silicon research has seen an outburst of new structures, experimentally observed or theoretically predicted (e.g., small fullerenes, heterofullerenes, schwarzite, and clathrates) with attractive properties. This book reviews these exotic futuristic species and their potential applications and critically examines the predicting
Published: 2013

41. Tunable mid IR plasmon in GZO nanocrystals

Author: Jean-Marie Bluet, O. Boisron, M. Hamza, Bruno Canut, Patrice Mélinon, Karine Masenelli-Varlot, Bruno Masenelli, INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École Centrale de Lyon ( ECL ), Université de Lyon, Matériaux, ingénierie et science [Villeurbanne] ( MATEIS ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ), Institut Lumière Matière [Villeurbanne] ( ILM ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de Physique de la Matière Condensée et Nanostructures ( LPMCN ), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Consortium Lyon Saint-Etienne de Microscopie (CLYM), École normale supérieure - Lyon (ENS Lyon)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet [Saint-Étienne] (UJM), Institut Lumière Matière [Villeurbanne] (ILM), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), École normale supérieure de Lyon (ENS de Lyon)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Jean Monnet - Saint-Étienne (UJM)
Subjects: Materials science, Dopant, business.industry, Doping, Surface plasmon, [ SPI.MAT ] Engineering Sciences [physics]/Materials, Nanoparticle, Physics::Optics, [SPI.MAT]Engineering Sciences [physics]/Materials, Condensed Matter::Materials Science, Nanocrystal, Physics::Atomic and Molecular Clusters, [ SPI ] Engineering Sciences [physics], Optoelectronics, General Materials Science, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, Surface plasmon resonance, business, Plasmon, Localized surface plasmon
Abstract: International audience; Degenerate metal oxide nanoparticles are promising systems to expand the significant achievements of plasmonics into the infrared (IR) range. Among the possible candidates, Ga-doped ZnO nanocrystals are particularly suited for mid IR, considering their wide range of possible doping level and thus of plasmon tuning. In the present work, we report on the tunable mid IR plasmon induced in degenerate Ga-doped ZnO nanocrystals. The nanocrystals are produced by a plasma expansion and exhibit unprotected surfaces. Tuning the Ga concentration allows tuning the localized surface plasmon resonance. Moreover, the plasmon resonance is characterized by a large damping. By comparing the plasmon of nanocrystals assemblies to that of nanoparticles dispersed in an alumina matrix, we investigate the possible origins of such damping. We demonstrate that it partially results from the self-organization of the naked particles but also from intrinsic inhomogeneity of dopants.
Published: 2015
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42. Ab initio study of C60–silicon clusters

Author: A. Perez, Patrice Mélinon, Bruno Masenelli, Xavier Blase, and Florent Tournus
Subjects: Silicon, Chemistry, Binding energy, Ab initio, General Physics and Astronomy, chemistry.chemical_element, Condensed Matter::Materials Science, Partial charge, Chemical physics, Ab initio quantum chemistry methods, Metastability, Physics::Atomic and Molecular Clusters, Density functional theory, Physical and Theoretical Chemistry, Atomic physics, Local-density approximation
Abstract: We report on the energetics of C60–Si clusters. By means of ab initio calculations based on the local density approximation to the density functional theory, we have investigated stable and metastable structures of C60–Si, C60–Si–C60, and (C60–Si)2 clusters. In each case, we show that silicon preferentially binds to C60 over a carbon–carbon double bond, in accordance with calculations on the interaction of C60 with silicon surfaces. This bonding is characterized by a partial charge transfer from silicon to C60. We show that the interaction between C60 and silicon is local and not perturbed by the addition of more C60–Si clusters or C60 molecules. The binding energy for stable and metastable (C60–Si)n⩽2 systems is high enough (several eV) to open the prospect of synthesizing nanostructured films from the C60–Si unit. Furthermore, in all three cases, the silicon position on a fivefold symmetry axis is found to be a metastable position. The nature and structure of nanostructured films resulting from the depo...
Published: 2002
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43. SiC bonding in ( C60)n Sim clusters

Author: Florent Tournus, Bruno Masenelli, Michel Broyer, Patrice Mélinon, Jean Lermé, Bernard Champagnon, M. Pellarin, and Alain Perez
Subjects: Materials science, Fullerene, Silicon, Extended X-ray absorption fine structure, chemistry.chemical_element, Atomic and Molecular Physics, and Optics, Ion, symbols.namesake, Crystallography, chemistry, Chemical bond, symbols, Molecule, Thin film, van der Waals force, Atomic physics
Abstract: This paper deals with a new type of SiC bonding where silicon atom seems to bridge C60 molecules. We have studied films obtained by deposition of (C60)nSim clusters prepared in a laser vaporization source. Prior deposition, free ionized clusters were studied in a time-of-flight mass spectrometer. Mixed clusters (C60)nSim were clearly observed. Abundance and photofragmentation mass spectroscopies revealed the relatively high stability of the (C60)nSi n + , (C60)nSi n - 1 + and (C60)nSi n - 2 + species. This observation is in favor of the arrangement of these complexes as polymers where the C60 cages may be bridged by a silicon atom. Free neutral clusters are then deposited onto substrate making up a nanogranular thin film (≃ 100 nm). The film is probed by Auger and X-ray photoemission spectroscopies, but above all by surface enhanced Raman scattering. The results suggest an unusual chemical bonding between silicon and carbon and the environment of the silicon atom is expected to be totally different from the sp3 lattice: ten or twelve carbon neighbors might surround silicon atom. The bonding is discussed to the light of the so-called fullerene polymerization as observed for pure fullerite upon laser irradiation. This opens a new route for bridging C60 molecules together with an appreciable energy bonding, since the usual van der Waals bonding in fullerite could be replaced by an ionocovalent bond. Such an assumption must be checked in the future by XAS and EXAFS experiments.
Published: 2001
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44. Fabrication and characterization of organic semiconductor-based microcavities

Author: Bruno Masenelli, Ségolène Callard, A. Gagnaire, J. Joseph, Laboratoire d'électronique, optoélectronique et microsystèmes (LEOM), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Equipe EPICAD (LNC - U1231), Lipides - Nutrition - Cancer [Dijon - U1231] (LNC), Université de Bourgogne (UB)-Institut National de la Santé et de la Recherche Médicale (INSERM)-AgroSup Dijon - Institut National Supérieur des Sciences Agronomiques, de l'Alimentation et de l'Environnement-Université de Bourgogne (UB)-Institut National de la Santé et de la Recherche Médicale (INSERM)-AgroSup Dijon - Institut National Supérieur des Sciences Agronomiques, de l'Alimentation et de l'Environnement, Jodrell Laboratory, and Royal Botanic Garden , Kew
Subjects: Fabrication, Materials science, 02 engineering and technology, 01 natural sciences, Ellipsometry, 0103 physical sciences, Dispersion (optics), Materials Chemistry, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, Optical path length, 010302 applied physics, business.industry, Metals and Alloys, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Characterization (materials science), Active layer, Organic semiconductor, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract: Structures confining light along one or two directions (microcavities) are of prime importance for the construction of opto-electronic devices based on luminescent semiconductor materials. Our work is devoted to the making of microcavities centered at 2.4 eV (515 nm) formed by two TiO 2 /SiO 2 distributed Bragg reflectors, surrounding an emitting layer. The emitting layer is an organic semiconductor (tri-hydroxyquinoline-aluminum, Alq 3 ) chosen for its strong luminescent efficiency. For the fabrication of such complex structure, the layer optical path length is an determining parameter to obtain a high quality microcavity. First, a particular attention has been paid to the characterization of the optical properties of the active layer and the mirror layers. Optical indices have been obtained by means of spectroellipsometry. Alq 3 and TiO 2 dispersion laws were successfully modeled with a model developed by Forohoui and Bloomer. Secondly, we applied in situ ellipsometry to control the mirror layer deposition. Finally, we show that this method allows microcavity fabrication with good accuracy.
Published: 2000
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45. Controlled spontaneous emission of a tri(8-hydroxyquinoline) aluminum layer in a microcavity

Author: L. Berthelot, J. Joseph, Bruno Masenelli, Jacques Tardy, A. Gagnaire, Laboratoire de Physique de la Matière Condensée et Nanostructures ( LPMCN ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), Laboratoire d'électronique, optoélectronique et microsystèmes ( LEOM ), École Centrale de Lyon ( ECL ), Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Laboratoire d'électronique, optoélectronique et microsystèmes (LEOM), École Centrale de Lyon (ECL), and Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Photoluminescence, Fabrication, Materials science, business.industry, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Physics::Optics, General Physics and Astronomy, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, law, Ellipsometry, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Radiative transfer, Optoelectronics, Spontaneous emission, 0210 nano-technology, business, Layer (electronics), Light-emitting diode
Abstract: International audience; We report the fabrication of all-dielectric microcavities with a tri(8-hydroxyquinoline) aluminum (Alq3) organic layer as the emitting layer. In a first step, we characterized the materials used in the structures by ellipsometry, and ensured nondegradation of the organic material in the fabrication process. Then, by angular-resolved photoluminescence, we investigated changes in the angular emission pattern caused by the cavities and observed a sharply directed emission. We also investigated the influence of the position of the radiative layer in the cavity on normal spontaneous emission. We observed enhancements in spontaneous emission over 20 times higher than that of a single Alq3 layer. These are the highest reported for organic material based microcavities. They are mainly explained by the very small thickness of the Alq3 layer (20 nm≡0.06λ, λ being the resonant wavelength), by high-quality low-loss dielectric mirrors as well as by the narrow collecting angle of our experiment (±3°). This study corroborates analogous works and demonstrates the possibility of controlling the spontaneous emission of an emitter by a microcavity.
Published: 1999
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46. Effect of the quantum confinement on the luminescent properties of sesquioxydes

Author: Christophe Dujardin, David Nicolas, Patrice Mélinon, Gilles Ledoux, Bruno Masenelli, Bruno Mercier, Laboratoire de Physico-Chimie des Matériaux Luminescents (LPCML), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, and Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN)
Subjects: 010302 applied physics, Field (physics), Chemistry, Biophysics, Nanoparticle, 02 engineering and technology, General Chemistry, Quantum Hall effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Biochemistry, Molecular physics, Atomic and Molecular Physics, and Optics, Crystal, Nanocrystal, Quantum dot, 0103 physical sciences, Spontaneous emission, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Atomic physics, 0210 nano-technology, Luminescence, ComputingMilieux_MISCELLANEOUS
Abstract: Spectroscopic behaviour of Y 2 O 3 :Ce 3+ nanocrystals is presented. A new fluorescence peaking around 430 nm appears in small particles. This emission is interpreted as the 5d–4f radiative recombination of Ce 3+ , which does not occur in bulk materials due to autoionisation processes. This change in behaviour could be due to both quantum confinement inside the nanoparticles and changes in the crystal field for small sizes.
Published: 2007
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47. Photoluminescence de microcavités organiques à base d'oligomères de phénylène vinylène et mise en évidence de l'influence de la structure de la cavité sur l'émission de l'Alq3

Author: M. Garrigues, Jacques Tardy, Bruno Masenelli, L. Berthelot, and J. Joseph
Subjects: Biochemistry
Abstract: Cet article decrit l'etude des proprietes de photoluminescence de films d'oligomeres de phenylene vinylene (OPV) obtenus par evaporation sous vide. La photoluminescence (PL) de ces materiaux depend de la longueur de conjugaison de la chaine. L'emission spontanee est largement modifiee en inserant les films entre deux miroirs et le gain de la microcavite peut etre module en optimisant la position du film a l'interieur de la cavite.
Published: 1998
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48. Modified spontaneous emission in oligo (p-phenylene vinylene) planar microcavities

Author: L. Berthelot, J. Joseph, Hervé Rigneault, V.H. Tran, Jacques Tardy, Bruno Masenelli, A. Gagnaire, and M. Garrigues
Subjects: Photoluminescence, Materials science, business.industry, Organic Chemistry, Dielectric, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Inorganic Chemistry, Phenylene, Optoelectronics, Spontaneous emission, Photoluminescence excitation, Irradiation, Emission spectrum, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, Luminescence, business, Spectroscopy
Abstract: This paper reports on the photoluminescence properties of phenylene vinylene oligomers films (OPV) the emission of which was modified by microcavity effect. Films with 4 and 6 vinyl groups (respectively denoted OPV-4 and OPV-6) were investigated. A strong blue luminescence at 470 nm is observed for OPV-4. OPV-6 shows an emission spectrum quite similar to that of poly phenylene vinylene (PPV). Photoluminescence excitation measurements (PLE) give similar behaviors for the two samples and do not show any change in the shape of the spectra. Ageing under UV irradiation (380 nm) of the unencapsulated OPV-4 layers was evidenced by an exponential decrease of the photoluminescence intensity of about 40% after 3 h a continuous illumination. OPV-6 samples, aged on shelf, for weeks does only show a small decrease (15%) of the PL level over more than 7 h under continuous UV irradiation. Microcavity related effects were observed by inserting the films between two mirrors. These are generally a TiO2/SiO2 distributed Bragg reflectors (DBR) as bottom mirror and a Ag film as top mirror. However best results were obtained with two dielectric DBR. As expected, a strong enhancement of the emission at the cavity resonance and pronounced angular effects (emission peaking in the direction normal to the surface of the device) were observed. The importance of the position of the emitting material within the microcavity is evidenced with a thin tris(8-hydroxy) quinoline aluminum (Alq) embedded in SiO2 with various cavity configurations.
Published: 1998
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49. Core-shell nanowire array on a film for hydrogen generation by photocatalytic water splitting with sunlight

Author: Zhong, M., Sato, Y., Aleksandra (Alexandra) Apostoluk, Bruno Masenelli, Ikuhara, Y., Delaunay, J. J., Inl, Laboratoire INL UMR5270, Nanomaterials Research Institute, Laboratoire des propriétés optiques des matériaux et applications ( LPOMA ), Université d'Angers ( UA ) -Centre National de la Recherche Scientifique ( CNRS ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Centre hospitalier universitaire de Nantes ( CHU Nantes ), The University of Tokyo, School of Engineering, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)
Subjects: [SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.MAT ] Engineering Sciences [physics]/Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [ SPI ] Engineering Sciences [physics], [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: 10th-14th June 2014; International audience; no abstract
Published: 2014

50. Improvement of the solar cell efficiency by the ZnO nanoparticle layer via the down-shifting effect

Author: Jean-Jacques Delaunay, Katarzyna Znajdek, Yao Zhu, Bruno Masenelli, Alexandru Focsa, Maciej Sibiński, Aleksandra Apostoluk, Iga Kaliszewska, INL - Spectroscopies et Nanomatériaux ( INL - S&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Centre hospitalier universitaire de Nantes ( CHU Nantes ), Institut d'Electronique du Solide et des Systèmes ( InESS ), Centre National de la Recherche Scientifique ( CNRS ), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), The University of Tokyo, School of Engineering, Łódź University of Technology, Department of Semiconductor and Optoelectronics Devices (DSOD), and INL - Photovoltaïque (INL - PV)
Subjects: Materials science, Organic solar cell, [ SPI.MAT ] Engineering Sciences [physics]/Materials, Quantum dot solar cell, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], Photovoltaics, [ SPI ] Engineering Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, business.industry, Photovoltaic system, Condensed Matter Physics, Copper indium gallium selenide solar cells, Atomic and Molecular Physics, and Optics, Cadmium telluride photovoltaics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Solar cell efficiency, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Quantum efficiency, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, business
Abstract: International audience; A down-shifting material can generate one low-energy photon for every one incident high-energy photon. When such a material is placed on the front side of a photovoltaic solar cell, it has the potential to enhance the overall efficiency of the PV device by emitting photons in the spectral range where the solar cell efficiency is higher. This paper examines the application of ZnO nanoparticles as a luminescent down-shifting layer (LDSL) on the Si-based, CIGS and CdTe photovoltaic devices. The experimental results measured on a Si-based photovoltaic cell with a top luminescent down-shifting layer are analyzed. Theoretical solar cells performances were simulated using the SCAPS program. The elaborated electrical and optical models take into account the photoluminescence of the ZnO nanoparticle top layer. The obtained external quantum efficiency (EQE) and I–V characteristics were analyzed in order to estimate the impact of the photoluminescent down-shifting layer on the final efficiency of the Si, CIGS and CdTe solar cells. Contrary to the EQE curves, the I–V characteristics of the CIGS and CdTe solar cells are strongly affected by the presence of the photoluminescent down-shifting layer on their top.
Published: 2014
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