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Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits, and kinetic inductance parametric amplifiers. Compared with planar structures, multilayer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multilayer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measure the subkelvin and low-power microwave and millimeter-submillimeter-wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using superconducting chips with Nb-Ti-N/a-SiC:H/Nb-Ti-N microstrip resonators. We deposit the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400°C. The a-SiC:H has a millimeter-submillimeter loss tangent ranging from 0.9×10-4 at 270 GHz to 1.5×10-4 at 385 GHz. The microwave loss tangent is 3.1×10-5. These are the lowest low-power subkelvin loss tangents that have been reported for microstrip resonators at millimeter-submillimeter and microwave frequencies. The a-SiC:H films are free of blisters and have low stress: -20 MPa compressive at 200-nm thickness to 60 MPa tensile at 1000-nm thickness., Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public., Tera-Hertz Sensing, Electronic Components, Technology and Materials

A superconducting microstrip half-wavelength resonator is proposed as a suitable band-pass filter for broadband moderate spectral resolution spectroscopy for terahertz (THz) astronomy. The proposed filter geometry has a free spectral range of an octave of bandwidth without introducing spurious resonances, reaches a high coupling efficiency in the pass-band and shows very high rejection in the stop-band to minimize reflections and cross-talk with other filters. A spectrally sparse prototype filter-bank in the band 300400 GHz has been developed employing these filters as well as an equivalent circuit model to anticipate systematic errors. The fabricated chip has been characterized in terms of frequency response, reporting an average peak coupling efficiency of 27% with an average spectral resolution of 940., Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public., Tera-Hertz Sensing

A superconducting microstrip half-wavelength resonator is proposed as a suitable band-pass filter for broadband moderate spectral resolution spectroscopy for terahertz (THz) astronomy. The proposed filter geometry has a free spectral range of an octave of bandwidth without introducing spurious resonances, reaches a high coupling efficiency in the pass-band and shows very high rejection in the stop-band to minimize reflections and cross-talk with other filters. A spectrally sparse prototype filter-bank in the band 300400 GHz has been developed employing these filters as well as an equivalent circuit model to anticipate systematic errors. The fabricated chip has been characterized in terms of frequency response, reporting an average peak coupling efficiency of 27% with an average spectral resolution of 940., Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public., Tera-Hertz Sensing

Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10−5 for a resonator energy of 105 photons, at 120 mK and 4–7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters., Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public., Tera-Hertz Sensing, Sanitary Engineering

Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10−5 for a resonator energy of 105 photons, at 120 mK and 4–7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters., Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public., Tera-Hertz Sensing, Sanitary Engineering

Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation., QuTech, QCD/Vandersypen Lab, QN/Vandersypen Lab

Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation., QCD/Vandersypen Lab, QN/Vandersypen Lab