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Telecom C-band single photons exhibit the lowest attenuation in optical fibers, enabling long-haul quantum-secured communication. However, efficient coupling with optical fibers is crucial for these single photons to be effective carriers in long-distance transmission. In this work, we demonstrate an efficient fiber-coupled single photon source at the telecom C-band using InAs/InP quantum dots coupled to a tapered nanobeam. The tapered nanobeam structure facilitates directional emission that is mode-matched to a lensed fiber, resulting in a collection efficiency of up to 65% from the nanobeam to a single-mode fiber. Using this approach, we demonstrate single photon count rates of 575 $\pm$ 5 Kcps and a single photon purity of $g^2$ (0) = 0.015 $\pm$ 0.003. Additionally, we demonstrate Hong-Ou Mandel interference from the emitted photons with a visibility of 0.84 $\pm$ 0.06. From these measurements, we determine a photon coherence time of 450 $\pm$ 20 ps, a factor of just 8.3 away from the lifetime limit. This work represents an important step towards the development of telecom C-band single-photon sources emitting bright, pure, and indistinguishable photons, which are necessary to realize fiber-based long-distance quantum networks

Photonic crystal nanobeam cavities are valued for their small mode volume, CMOS compatibility, and high coupling efficiency crucial features for various low-power photonic applications and quantum information processing. However, despite their potential, nanobeam cavities often suffer from low quality factors due to fabrication imperfections that create surface states and optical absorption. In this work, we demonstrate InP nanobeam cavities with up to 140% higher quality factors by applying a coating of Al$_2$O$_3$ via atomic layer deposition to terminate dangling bonds and reduce surface absorption. Additionally, changing the deposition thickness allows precise tuning of the cavity mode wavelength without compromising the quality factor. This Al$_2$O$_3$ atomic layer deposition approach holds great promise for optimizing nanobeam cavities that are well-suited for integration with a wide range of photonic applications.

Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T center holds particular promise because it possesses a spin ground state that has long coherence times. But this color center exhibits a long excited state lifetime which results in a low photon emission rate, requiring methods to extract photon emission with high efficiency. We demonstrate high-efficiency single photon emission from a single T center using a nanobeam. The nanobeam efficiently radiates light in a mode that is well-matched to a lensed fiber, enabling us to collect over 70% of the T center emission directly into a single mode fiber. This efficiency enables us to directly demonstrate single photon emission from the zero phonon line, which represents the coherent emission from the T center. Our results represent an important step towards silicon-integrated spin-photon interfaces for quantum computing and quantum networks., Comment: 9 pages, 4 figures

Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300~mm foundry process. With this platform, we achieve single photon emission via resonance fluorescence and scalable emission wavelength tunability through an electrically controlled non-volatile memory. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries., Comment: 9 pages, 4 figures

The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V devices, but it is still unclear how to engineer these modes to make photonic crystal cavities. Herein, using 3D finite-difference time-domain simulation, a hybrid Si-GaAs photonic crystal cavity design enables cavity mode confinement in GaAs without directly patterning that operates at telecom wavelengths. The hybrid cavity consists of a patterned silicon waveguide nanobeam that is evanescently coupled to a GaAs slab with quantum dots. We show that by engineering the hybrid modes, we can control the degree of coupling to the active material, which leads to a tradeoff between cavity quality factor and optical gain and nonlinearity. With this design, we demonstrate a cavity mode in the Si-GaAs heterogeneous region, which enables strong interaction with the quantum dots in the GaAs slab for applications such as low-power-threshold lasing and optical bistability (156 nW and 18.1 ${\mu}$W, respectively). This heterogeneous integration of an active III-V material with silicon via a hybrid cavity design suggests a promising approach for achieving on-chip light generation and low-power nonlinear platforms.

Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom single photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk we can control the transmission of the emitted single photons to the drop and through channels of the add-drop filter. This result is a step toward the on-chip control of single photons using silicon photonics for applications in quantum information processing, such as linear optical quantum computation and boson sampling.

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the quantum dots attached to a fiber taper. The adiabatic tapered coupler of the nanobeam enables efficient light coupling to the fiber taper. Using a tungsten probe in a focused ion beam system, we transferred the nanobeam to the fiber taper. The observed fiber-coupled single photon emission occurs with a brightness of 1.5% and purity of 86%. This device provides a building block for fiber-optic quantum circuits that have various applications, such as quantum communication and distributed quantum computing.

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue as it can control the emission energy of individual quantum dots through the quantum-confined Stark effect. Realizing this technique in InAs/InP quantum dots has previously been limited to shifts of less than 0.8 meV due to jumps in the emission energy because of additional charges at high electric field intensities. We demonstrate up to 5.1 meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To eliminate undesirable jumps to charged state, we use a thin oxide insulator to prevent carrier injection from the contacts, thereby significantly improves the tuning range of the Stark effect. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under a wide range of applied electric fields. Using photoluminescence intensity measurements and time-resolved lifetime spectroscopy we confirmed that this Stark tuning range is limited by carrier tunneling at high electric fields. This result is an important step toward integrating multiple identical quantum emitters at telecom wavelengths on-a-chip, which is crucial for realizing complex quantum photonic circuits for quantum information processing.

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.

Coupling single photon emitters to surface plasmons provides a versatile ground for on chip quantum photonics. However, achieving good coupling efficiency requires precise alignment of both the position and dipole orientation of the emitter relative to the plasmonic mode. We demonstrate coupling of single emitters in the 2-D semiconductor, WSe2 self-aligned with propagating surface plasmon polaritons in silver-air-silver, metal-insulator-metal waveguides. The waveguide produces strain induced defects in the monolayer which are close to the surface plasmon mode with favorable dipole orientations for optimal coupling. We measure an average enhancement in the rate of spontaneous emission by a factor of 1.89 for coupling the single defects to the plasmonic waveguide. This architecture provides an efficient way of coupling single photon emitters to propagating plasmons which is an important step towards realizing active plasmonic circuits on chip., Comment: 8 pages, 4 figures