1. Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices
- Author
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Guanxiong Liu, En Xia Zhang, Tina T. Salguero, Daniel M. Fleetwood, Matthew A. Bloodgood, Alexander A. Balandin, and C. D. Liang
- Subjects
Phase transition ,Materials science ,Condensed matter physics ,010308 nuclear & particles physics ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,Absorbed dose ,0103 physical sciences ,Irradiation ,Electrical and Electronic Engineering ,Thin film ,0210 nano-technology ,Charge density wave ,Radiation hardening ,Voltage - Abstract
The $1{T}$ polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film $1{T}$ -TaS2 at doses up to 1 Mrad (SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of $1{T}$ -TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of $1{T}$ -TaS2, are promising for applications in high radiation environments.
- Published
- 2017
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