1. Electronic Structure and Catalytic Study of Solid Solution of GaN in ZnO
- Author
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C. Madhavan Nair, C. M. Janet, R. P. Viswanath, K. S. Thushara, Maitri Mapa, Chinnakonda S. Gopinath, K. V. G. K. Murty, Biswajit Saha, and Purushottam Chakraborty
- Subjects
Electronic structure ,Secondary ion mass spectrometry ,Band gap ,General Chemical Engineering ,Analytical chemistry ,Nitride ,Zinc sulfide ,symbols.namesake ,Solidification ,Nitrogen fixation ,X-ray photoelectron spectroscopy ,Zinc oxide ,XPS ,Materials Chemistry ,Semiconducting gallium ,Semiconducting zinc compounds ,Wurtzite crystal structure ,Chemistry ,Lattice contraction ,Gallium alloys ,Gallium nitride ,General Chemistry ,Catalytic activity ,Solution combustion method ,Ambient pressures ,Zinc ,ZnO ,Catalyst activity ,symbols ,Wurtzite structure ,Crystallization ,Raman spectroscopy ,Solid solutions ,Visible light absorption ,Visible spectrum ,Solid solution - Abstract
Solid solutions of GaN in ZnO (Zn1-zGaz)(O 1-xNx) (x and z le; 0.15) have been prepared by simple solution combustion method. Except for minor changes in the lattice contraction, no significant change in the Wurtzite structure was observed. Raman and secondary ion mass spectrometry results show the direct Zn - N and Ga - N bonds in (Znl-zGaz)(Ol-xNx). Visible light absorption and XPS results demonstrate that N 2p states of nitride occupy the states above the O 2p valence band, and hence a change in optical band gap reduction occurs to ?2.5 eV from 3.37 eV for ZnO. Significant nitrogen fixation catalytic activity through NH3 formation has been observed at ambient pressure on virgin (Znl-zGaz)(O l-xNx) material, indicating its potential as a catalyst. � 2009 American Chemical Society.
- Published
- 2009
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