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7 results on '"CD metrology"'

1. Challenges in nanometrology: high precision measurement of position and size.

Author

Bosse, Harald, Bodermann, Bernd, Dai, Gaoliang, Flügge, Jens, Frase, Carl G., Groß, Hermann, Häßler-Grohne, Wolfgang, Köchert, Paul, Köning, Rainer, Scholze, Frank, and Weichert, Christoph

Subjects
NANOMETROLOGY, MEASUREMENT, OPTICAL measurements, SCANNING electron microscopy, SCANNING probe microscopy
Abstract

Copyright of Technisches Messen is the property of De Gruyter and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2015
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2. Automated Metrology for SEM Calibration and CD Line Measurements Using Image Analysis and SEM Modeling Methods.

Author

Khvatkov, Vitali, Alievski, Vasily, Kadushnikov, Radi, and Babin, Sergey

Subjects
*METROLOGY, *SCANNING electron microscopy, *SCANNING probe microscopy, *ELECTRON beams, *IMAGE analysis, *IMAGING systems
Abstract

Due to shrinking size of lithographic feature and limitations of SEM process, the native accuracy of CD-SEM instrument falls outside of ITRS requirements for characterization of lithographic structures for technology node 45 nm and smaller. This work provides overview and feasibility study of metrology system that can deliver accurate CD measurements from CD-SEM by using combination of image metrology and SEM beam modeling methods for automated evaluation and correction of CD-SEM bias. Open issues and further metrology needs are also discussed. [ABSTRACT FROM AUTHOR]

Published
2007
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3. The Limits of CD Metrology.

Author

Rice, Bryan J., Cao, Heidi, Grumski, Michael, and Roberts, Jeanette

Subjects
*METROLOGY, *SEMICONDUCTORS, *INDUSTRIAL equipment, *MEASUREMENT, *ELECTRONIC industries, *PROCESS control systems
Abstract

One of the many technology decisions facing the semiconductor industry for the 32 nm node (and beyond) is the selection of the best critical dimension (CD) metrology equipment to meet the needs of process equipment suppliers and semiconductor manufacturers. Over the past three years Intel ® has fabricated a variety of test structures and performed a number of technology evaluations aimed at determining the limits of today’s CD metrology. In this paper we discuss the capability of those technologies to measure structures having dimensions representative of the 45 nm, 32 nm, and 22 nm nodes. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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4. Spatial Variance Spectrum Analysis and Its Application to Unsupervised Detection of Systematic Wafer Spatial Variations

Author

Jakey Blue, Argon Chen, Blue, Jakey, Département Sciences de la Fabrication et Logistique (SFL-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), and Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC

Subjects
Engineering, spatial spectrum, Semiconductor device fabrication, [SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, spatial variation, spatial sample variance, pattern index, [STAT.AP] Statistics [stat]/Applications [stat.AP], Electronic engineering, Range (statistics), [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Electrical and Electronic Engineering, Statistical hypothesis testing, [STAT.AP]Statistics [stat]/Applications [stat.AP], business.industry, random variation, Pattern recognition, systematic variation, Metrology, Control and Systems Engineering, Surface metrology, Frequency domain, Spatial variability, Artificial intelligence, CD metrology, business, Random variable
Abstract

International audience; Investigation of wafer spatial variations is critical for semiconductor process/equipment optimization and circuit design. The objective of spatial variation study is to differentiate the systematic variation component from the random component. This is usually done by contrasting with a set of known systematic patterns based on engineering knowledge. However, there could exist unknown systematic components remaining in the unexplained residuals and overlooked by the conventional spatial variation study. In this paper, we develop a novel spatial variance spectrum (SVS) to analyze the systematic variations without any priori information of the systematic patterns. The SVS is a series of spatial variations over a range of spatial moving window sizes from the smallest spatial moving window consisting of only two metrology sites to the largest one covering all metrology sites of the entire wafer. The SVS can be used to characterize the wafer spatial variations and to detect existence of systematic variations by a proposed hypothesis test. We also propose an index to summarize from the SVS the systematic proportion of the spatial variation. The proposed test and index of systematic variations will be demonstrated and validated through both hypothetical examples and actual cases of wafer critical dimension (CD) metrology data.

Published
2011

5. Joint Research on Scatterometry and AFM Wafer Metrology

Author

Bernd Bodermann, Egbert Buhr, Hans-Ulrich Danzebrink, Markus Bär, Frank Scholze, Michael Krumrey, Matthias Wurm, Petr Klapetek, Poul-Erik Hansen, Virpi Korpelainen, Marijn van Veghel, Andrew Yacoot, Samuli Siitonen, Omar El Gawhary, Sven Burger, Toni Saastamoinen, David G. Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, and Erik M. Secula

Subjects
Materials science, business.industry, Atomic force microscopy, System of measurement, Realisation, Mechanical engineering, Metrology, rigorous modelling, inverse diffraction problem, Optics, Calibration, Wafer, CD metrology, AFM, scatterometry, business, Lithography, Critical dimension, reference standard
Abstract

Supported by the European Commission and EURAMET, a consortium of 10 participants from national metrology institutes, universities and companies has started a joint research project with the aim of overcoming current challenges in optical scatterometry for traceable linewidth metrology. Both experimental and modelling methods will be enhanced and different methods will be compared with each other and with specially adapted atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurement systems in measurement comparisons. Additionally novel methods for sophisticated data analysis will be developed and investigated to reach significant reductions of the measurement uncertainties in critical dimension (CD) metrology. One final goal will be the realisation of a wafer based reference standard material for calibration of scatterometers.

Published
2011
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6. Joint Research on Scatterometry and AFM Wafer Metrology

Author

Bodermann, B. (author), Buhr, E. (author), Danzebrink, H.U. (author), Bär, M. (author), Scholze, F. (author), Krumrey, M. (author), Wurm, M. (author), Klapetek, P. (author), Hansen, P.E. (author), Korpelainen, V. (author), Van Veghel, M. (author), Yacoot, A. (author), Siitonen, S. (author), El Gawhary, O. (author), Burger, S. (author), Saastamoinen, T. (author), Bodermann, B. (author), Buhr, E. (author), Danzebrink, H.U. (author), Bär, M. (author), Scholze, F. (author), Krumrey, M. (author), Wurm, M. (author), Klapetek, P. (author), Hansen, P.E. (author), Korpelainen, V. (author), Van Veghel, M. (author), Yacoot, A. (author), Siitonen, S. (author), El Gawhary, O. (author), Burger, S. (author), and Saastamoinen, T. (author)

Abstract

Supported by the European Commission and EURAMET, a consortium of 10 participants from national metrology institutes, universities and companies has started a joint research project with the aim of overcoming current challenges in optical scatterometry for traceable linewidth metrology. Both experimental and modelling methods will be enhanced and different methods will be compared with each other and with specially adapted atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurement systems in measurement comparisons. Additionally novel methods for sophisticated data analysis will be developed and investigated to reach significant reductions of the measurement uncertainties in critical dimension (CD) metrology. One final goal will be the realisation of a wafer based reference standard material for calibration of scatterometers., IST/Imaging Science and Technology, Applied Sciences

Published
2011
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7. Nanostructure determination of surfaces and varied interfaces of thin films by grazing-incidence small-angel X-ray scattering

Subjects
粒子・空孔サイズ分布, surface and varied interface, 磁性ナノ粒子, 微小角入射X線小角散乱, 埋もれた表面界面, Low-k, particle/pore size distribution, CD metrology, Grazing-incidence small-angel X-ray scattering, CD計測
Abstract

第1章 序論|第2章 多孔質低誘電率層間絶縁膜中のナノ空孔の構造評価|第3章 磁性薄膜中のニッケル磁性ナノ粒子のナノ構造評価|第4章 CD－SAXSによる一次元表面回折格子のピッチ幅計測と断面形状の評価|第5章 研究の成果と今後の期待|引用文献|用語集と解説|論文および発表リスト|謝辞, 半導体や磁性デバイスなど多くの電子デバイス材料は,回路の高集積化や記録層の高密度化などを目的とし,サブミクロンからナノスケールへと微細化が進められている.そのため,デバイスのプロセス管理に要求される計測の分解能や精度はナノメートルからサブナノメートルに達しつつある.ナノスケールの微細化にともなうデバイス性能の向上,量子サイズ効果による新規物性の発現などの研究が進む一方,これらのナノ構造体の大きさ,形状,ばらつき,乱れなどを評価する計測・解析技術にも大きな進歩が望まれている.本研究では,薄膜に埋もれたナノ構造を非破壊で分析できる微小角入射X線小角散乱法を実験室レベルで実現し,大きさ,形状,ばらつき,乱れなどを評価する解析技術を開発した.さらに,本手法を多孔質低誘電率層間絶縁膜に埋もれたナノ空孔の空孔サイズ分布および空孔率の評価,磁性薄膜中に埋もれた磁性ナノ粒子の粒子・結晶子サイズ分布の評価,表面ナノ加工のピッチ幅の絶対寸法計測と断面形状評価に応用した.これらの結果は,ガス吸着法,TEM,AFM観察像と結果と良く一致し,本研究が埋もれたナノ構造を非破壊かつ簡便に測定できる有効な方法であることを示した., 九州工業大学博士学位論文 学位記番号:工博甲第284号 学位授与年月日:平成21年3月25日, 平成20年度

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