1. Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study
- Author
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L. Martin Samos, Nicolas Richard, P.L. Julliard, Denis Rideau, Anne Hémeryck, A. LeRoch, Vincent Goiffon, Filadelfo Cristiano, Antoine Jay, S. de Gironcoli, Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE), Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE), Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE), Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE), STMicroelectronics (FRANCE), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), Université Toulouse - Jean Jaurès - UT2J (FRANCE), Université Toulouse 1 Capitole - UT1 (FRANCE), CNR Istituto Officina dei Materiali - IOM (Rome, Italy), Équipe Modélisation Multi-niveaux des Matériaux (LAAS-M3), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), STMicroelectronics [Crolles] (ST-CROLLES), Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), CEA DAM ILE-DE-FRANCE - Bruyères-le-Châtel [Arpajon] (CEA DAM IDF), CNR Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche [Roma] (CNR), Scuola Internazionale Superiore di Studi Avanzati / International School for Advanced Studies (SISSA / ISAS), European Project: 871813,H2020-EU.2.1.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT) ,MUNDFAB (2020), Centre d'Études de Limeil-Valenton (CEA-DAM), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR)
- Subjects
Band gap ,Radiation effects ,02 engineering and technology ,01 natural sciences ,Signal ,Settore FIS/03 - Fisica della Materia ,Atomic measurements ,Metastability ,0103 physical sciences ,cross sections ,Cluster (physics) ,Traitement du signal et de l'image ,Electronics ,defects ,010302 applied physics ,Physics ,[PHYS]Physics [physics] ,Modulation ,Semiconductor device measurement ,business.industry ,defects electronic states ,Time measurement ,021001 nanoscience & nanotechnology ,Discrete Fourier transforms ,Computational physics ,Semiconductor ,Dark current ,random telegraph signal ,(SISPAD)(SISPAD)Dark current ,0210 nano-technology ,business ,electronic states ,Switches - Abstract
International audience; The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or implantation are studied as a possible cause for RTS. It is shown that: (i) a cluster of defects is highly metastable, (ii) it introduces several electronic states in the band gap, (iii) it has an electronic cross section much higher than the one of point defects. These three points can simultaneously explain why an electronhole generation rate can switch with time, while respecting the experimental measurement.
- Published
- 2021
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