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1. Memory Challenges

6. Modeling of set/reset operations in NiO-based resistive-switching memory devices

7. Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices

8. Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices

16. Investigation of Cycle-to-Cycle Variability in HfO2-Based OxRAM

19. Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM

20. Resistance switching variability in HfO2-based memory structures with different electrodes

26. (Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions

29. Quantum-size effects in hafnium-oxide resistive switching

31. Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology

32. Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS2-Based Conductive Bridge Memories

45. Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM.

46. Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices.

47. Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories.

48. Impact of Electrode Materials on Resistive-Switching Memory Programming.

49. (Invited) Reliability and Scaling Perspectives of HfO2-Based OxRAM

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