92 results on '"Cagli, Carlo"'
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2. Memory Challenges
3. Discrete current limiting circuit for emerging memory programming
4. Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology
5. Guest Editorial Special Section on the IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
6. Modeling of set/reset operations in NiO-based resistive-switching memory devices
7. Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices
8. Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
9. (Invited) Reliability and Scaling Perspectives of HfO2-Based OxRAM
10. (Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions
11. Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications
12. Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO2 Based RRAM Arrays
13. Study of Forming Impact on 4Kbit RRAM Array Performances and Reliability
14. Study of the Energy Consumption Optimization on RRAM Memory Array for SCM Applications
15. Bilayer Metal-Oxide Conductive Bridge Memory Technology for Improved Window Margin and Reliability
16. Investigation of Cycle-to-Cycle Variability in HfO2-Based OxRAM
17. Session 7: Memories
18. Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment
19. Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM
20. Resistance switching variability in HfO2-based memory structures with different electrodes
21. Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure
22. Reset instability in pulsed-operated unipolar resistive switching memory
23. Bilayer Metal-Oxide CBRAM Technology for Improved Window Margin and Reliability
24. Impact of electrode materials on resistive-switching memory (RRAM) programmning
25. (Invited) Temperature Impact on Reliablity and Manufacturing of Embedded HfOx-Based RRAM: a Novel Pre-coding Method for Bypassing Soldering Reflow
26. (Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions
27. Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
28. A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown
29. Quantum-size effects in hafnium-oxide resistive switching
30. Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices
31. Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology
32. Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS2-Based Conductive Bridge Memories
33. Understanding the Role of the Ti Metal Electrode on the Forming of HfO2-Based RRAMs
34. Analysis and modeling of resistive switching statistics
35. Quantum point contact model of filamentary conduction in resistive switching memories
36. Cell-based models for the switching statistics of RRAM
37. Reset Statistics of NiO-Based Resistive Switching Memories
38. Nanowire Switches: Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires (Small 20/2011)
39. Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
40. Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires
41. Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices
42. Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
43. Size-dependent Temperature Instability in NiO–based Resistive Switching Memory
44. Cell-based models for the switching statistics of RRAM.
45. Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM.
46. Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices.
47. Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories.
48. Impact of Electrode Materials on Resistive-Switching Memory Programming.
49. (Invited) Reliability and Scaling Perspectives of HfO2-Based OxRAM
50. Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown.
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