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The small size and large trap density have seriously hindered the application of cesium copper iodine single crystals (SCs). Herein, we propose a strategy for synthesizing high-quality and large-sized CsCu2I3 SCs by gradient crystallization. The as-synthesized CsCu2I3 SCs exhibit a large length of 1.7 cm with a low trap density of 4.17 × 109 cm−3. Moreover, such CsCu2I3 SCs show excellent photoelectric response to ultraviolet (UV) irradiation, owing to their high absorption coefficient, large Stokes shift, and one-dimensional electronic structure. The measured responsivity and detectivity of the CsCu2I3 SC-based photodetectors reach the maxima of 24.58 A/W and 1.02 × 1013 Jones, respectively, under 365 nm light irradiation. Due to the outstanding UV detection performance, such photodetectors are also utilized for achieving direct UV imaging with high resolutions. [ABSTRACT FROM AUTHOR]

Recently, mixed‐halide inorganic CsPbI3−xBrx perovskite solar cells (PSCs) have had a rapid advancement, which offers balanced efficiency, stability, tunable bandgap, and potential for indoor photovoltaic applications. Despite these advantages, significant challenges remain in the phase segregation phenomena, trap state density, and absorption range limitations. This review presents an analysis of the crystal and electronic structure and optical properties of CsPbI3−xBrx, as well as an in‐depth look at high‐quality CsPbI3−xBrx film preparation, phase segregation inhibition potential solutions, and interface engineering, highlighting the critical role of interface modification in the performance of CsPbI3−xBrx PSCs. Furthermore, how CsPbI3−xBrx PSCs can be strong candidates for indoor photovoltaics because of their adjustable bandgap that enables them to better match the absorption range and notable strength stability is discussed. Finally, the review provides perspectives to address the development bottlenecks and inspires future research prospects concerning CsPbI3−xBrx PSCs. [ABSTRACT FROM AUTHOR]

Lead‐free metal halides are considered a new generation of optoelectronic materials due to their low toxicity, superior optoelectronic properties, ease of synthesis, structural diversity, and low cost. In particular, Mn2+‐based metal halides have earned intensive attention owing to their high emission quantum efficiency, rich physical properties (e.g., triboluminescence and stimuli‐responsivity), low cost, and toxicity. Due to the different coordination environments of Mn ions, Mn2+‐based metal halides can exhibit green, red, and near‐infrared emissions. This review summarizes the recent progress of Mn2+‐based metal halides in synthesis methods, emission mechanisms, photophysical properties, and representative applications in X‐ray scintillations, white light‐emitting diodes, optical anti‐counterfeiting technologies, and fluorescent sensors. Finally, the challenges and potential research directions toward developing Mn2+‐based metal halides are also predicted. [ABSTRACT FROM AUTHOR]

Fully solution-processed oxide thin-film transistors (TFTs) have shown a great potential in future printable electronics. However, high defect densities at the dielectric/channel interface have limited the simultaneous achievement of low operating voltage and high device performance. In this Letter, we study the effects of bilayer gate dielectrics in potential performance enhancement of solution-processed indium zinc oxide (IZO) TFTs. Several single and bilayer gate dielectrics are studied in terms of their physical and electrical properties. Compared with IZO TFTs using single-layer ZrOx gate dielectrics, optimized TFTs with ZrOx/AlOx gate dielectrics show an increase in carrier mobility and current on/off ratio by a factor of 3.5 and 27, respectively. The inner mechanisms of the performance enhancement are systematically studied, showing that the significantly improved TFT performance originates from the passivation effects of AlOx, which reduce the trap/defect states at the dielectric/channel interface by approximately an order of magnitude. With a low operating voltage of 2 V, a high mobility of over 10 cm2/V s, a subthreshold swing as low as 89 mV/dec, and a high current on/off ratio of >105, the reported devices might have a great potential in future low-cost, low-power printable electronics. [ABSTRACT FROM AUTHOR]