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We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are established by numerical calculation workflow. System-level power consumption is evaluated in the 512 KB last-level cache according to 5 quality levels. Error-tolerant applications, such as image processing, alleviate the demand for selectivity down to the 5E-2 level, leading to 54% ~ 61% energy-saving. Our proposal paves the novel and suitable path for high-density and low-power NAND-like SOT-MRAM.

Magnetic droplets, a class of highly non-linear magnetodynamical solitons, can be nucleated and stabilized in nanocontact spin-torque nano-oscillators where they greatly increase the microwave output power. Here, we experimentally demonstrate magnetic droplets in magnetic tunnel junctions (MTJs). The droplet nucleation is accompanied by a power increase of over 300 times compared to its ferromagnetic resonance modes. The nucleation and stabilization of droplets are ascribed to the double-CoFeB free layer structure in the all-perpendicular MTJ which provides a low Zhang-Li torque and a high pinning field. Our results enable better electrical sensitivity in the fundamental studies of droplets and show that the droplets can be utilized in MTJ-based applications.

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents4, either spin transfer torque or spin orbit torque with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics. Here, we report an optomagnetic tunnel junction using a spintronic-photonic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optomagnetic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast spintronic memories with THz data access, as well as ultralow power consumption., Comment: 18 pages, 3 figures

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high magnetoresistance, stable intermediate states and spin-polarized current switching in a single device pose difficulties in physical implementation. Here, we experimentally demonstrate a nanoscale spin-torque memristor based on a perpendicular-anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure. Its tunneling magnetoresistance is higher than 200%, and memristive behavior can be realized by spin-transfer torque switching. Memristive states are maintained by robust domain wall pinning around clusters of W atoms, where nanoscale vertical chiral spin textures could be formed through the competition between opposing Dzyaloshinskii-Moriya interactions and the fluctuating interlayer coupling caused by the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeB free layers. Spike-timing-dependent plasticity is also demonstrated in this device.

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for spin-orbit torque to execute deterministic switching in perpendicular magnetic tunnel junctions; the demand for reduced spin-transfer torque switching current to realize ultralow power is still remaining. Thus, a more advanced switching mechanism is urgently needed to move forward spintronics for wide applications. Here, we experimentally demonstrate the field-free switching of three-terminal perpendicular-anisotropy nanopillar devices through the interaction between spin-orbit and spin-transfer torques. The threshold current density of spin-transfer torque switching is reduced to 0.94 MA.cm-2, which is a significant decrease compared to that in other current-induced magnetization switching mechanisms. In addition, thanks to the interplay of spin-orbit and spin-transfer torques, lower current-induced switching in the conventional two-terminal perpendicular magnetic tunnel junctions is also achieved., Comment: 21 pages, 5 figures

In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMI) by a spin-polarized current with the assistance of stray fields from the pinned layer. The size, stability and number of created skyrmions can be tuned by either the DMI strength or the stray field distribution. The interaction between the stray field and the DMI effective field is discussed. A device with multi-level tunneling magnetoresistance is proposed, which could pave the ways for skyrmion-MTJ-based multi-bit storage and artificial neural network computation. Our results may facilitate the efficient nucleation and electrical detection of skyrmions., Comment: 4 figure in main text,14 figure in the supplementary information

Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with efficient writing operation. Unfortunately, SOT-MTJ faces the low tunneling magnetoresistance (TMR) problem. In this work, we present an ab initio calculation on the TMR in SOT-MTJ. It is demonstrated that TMR would be enhanced by SOT-MTJ symmetry structure. The symmetrization induces interfacial resonant states (IRSs). When IRSs match identical resonances at the opposite barrier interface, resonant tunneling occurs in SOT-MTJ, which significantly contributes to the conductance in parallel configuration and improves TMR. We demonstrate the occurrence of resonant tunneling by transmission spectra, density of scattering states and differential density of states. We also point out that the thickness of heavy metal has limited influence on TMR. This work would benefit the TMR optimization in SOT-MTJ, as well as the SOT spintronics device.

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 {\Omega}.{\mu}m2, which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high temperature diffusion during annealing. The switching critical current density could be lower than 3.0 MA.cm-2 for devices with a 45 nm radius., Comment: 20 pages, 5 figures

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory (MRAM) and resistive random access memory (RRAM) suffer from limitations of low tunnel magnetoresistance (TMR), low access speed or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. Here, we report a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re-MTJ), that may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re-MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behaviour by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point-switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in-memory computing and neuromorphics.

Pt/Co/heavy metal (HM) tri-layered structures with interfacial perpendicular magnetic anisotropy (PMA) are currently under intensive research for several emerging spintronic effects, such as spinorbit torque, domain wall motion, and room temperature skyrmions. HM materials are used as capping layers to generate the structural asymmetry and enhance the interfacial effects. For instance, the Pt/Co/Ta structure attracts a lot of attention as it may exhibit large Dzyaloshinskii-Moriya interaction. However, the dependence of magnetic properties on different capping materials has not been systematically investigated. In this paper, we experimentally show the interfacial PMA and damping constant for Pt/Co/HM tri-layered structures through time-resolved magneto-optical Kerr effect measurements as well as magnetometry measurements, where the capping HM materials are W, Ta, and Pd. We found that the Co/HM interface plays an important role on the magnetic properties. In particular, the magnetic multilayers with a W capping layer features the lowest effective damping value, which may be attributed to the different spin-orbit coupling and interfacial hybridization between Co and HM materials. Our findings allow a deep understanding of the Pt/Co/HM tri-layered structures. Such structures could lead to a better era of data storage and processing devices., Comment: 6 pages, 5 figures, 2 tables