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Porous silicon nanowires enable optical switching and electrical current amplification in a photon-triggered transistor. Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons1,2 or phototransistors with the gate response tuned or enhanced by photons3,4,5. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 106. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.

The realization of nonlinear photonic circuits to achieve the control of light-by-light is contingent upon a strong nonlinear response that can be captured in a guided-wave geometry. There remains a need to further scale down waveguides while maintaining a strong nonlinear response. In this study, we report second-harmonic generation and optical parametric generation using the second-order nonlinear response in an 80 nm thick CdS nanowire subwavelength waveguide. Moreover, our three-dimensional finite-difference time-domain (FDTD) simulations demonstrate that it is possible to enhance the coherence length due to the very nature of the subwavelength geometry. Nonlinear mixing in a nanowire subwavelength waveguide represents an advance toward all-optical processing and all-optical switching in integrated photonic circuits.

The efficient delivery of photons from light sources to photonic circuits is central to any fibre-optic or integrated optical system. Coupling light emitters to optical fibres or waveguides determines the photon flux available in, and therefore the performance of, photonic devices used in applications such as optical communication and information processing. Many solutions have been proposed to improve impedance matching in light-emitting diode-to-fibre or photonic-crystal cavity-to-waveguide systems; however, the efficient coupling of integrated light sources into nanophotonic circuits remains a challenge. Here, we propose an optically or electrically driven photonic structure that uses active semiconductor nanowires to light up photonic-crystal waveguides. The photonic crystal is used to either guide or filter out different colours of light as desired. In addition, we report an active nanowire-based optical structure that can generate two different colours of light and then send them in opposite directions. The hybrid nanowire/photonic-crystal waveguide represents a significant advance towards all-optical processing in nanoscale integrated photonic circuits and a new addition to the nanophotonic toolbox.

We report a hybrid approach for photonic systems that combines chemically synthesized single nanowire emitters with lithographically defined photonic crystal and racetrack microresonator structures. Finite-difference time-domain calculations were used to design nanowire photonic crystal structures where the photonic band gap overlaps the electronic band gap of the nanowire. Photoluminescence (PL) images of cadmium sulfide (CdS) nanowire photonic crystal structures designed in this way demonstrate localized emission from engineered defects and light suppression in regions of the photonic crystal. PL spectroscopy studies of defect-free nanowire photonic crystal structures further demonstrate the photonic band gap or stop band that spans most of the CdS band edge emission spectrum. In addition, single CdS nanowire-racetrack microresonator structures were fabricated, and PL imaging and spectroscopy measurements show good coupling of the nanowire to the microcavity including efficient feedback and amplified spontaneous emission. These hybrid structures exploit unique strengths of bottom-up and top-down approaches and thereby open new opportunities in nanophotonics from efficient and localized light sources to integrated optical processing.

A general approach for the synthesis of manganese-doped II-VI and III-V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn2+ ((4)T1--(6)A1) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn3+) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices.

We report an approach for guiding and manipulating light on sub-wavelength scales using active nanowire waveguides and devices. Quantitative studies of cadmium sulfide (CdS) nanowire structures show that light propagation takes place with only moderate losses through sharp and even acute angle bends. In addition, measurements demonstrate that efficient injection into and modulation of light through nanowire waveguides are achievable in active devices. The ability to inject, guide, and manipulate light on a sub-wavelength scale using nanowire components that can be assembled into integrated structures represents a promising pathway towards integrated nanoscale photonic systems.

Single-crystal silicon nanowires with diameters approaching molecular dimensions were synthesized using gold nanocluster-catalyzed 1D growth. High-resolution transmission electron microscopy studies show that silicon nanowires grown with silane reactant in hydrogen are single crystal with little or no visible amorphous oxide down to diameters as small as 3 nm. Structural characterization of a large number of samples shows that the smallest-diameter nanowires grow primarily along the 〈110〉 direction, whereas larger nanowires grow along the 〈111〉 direction. In addition, cross-sectional transmission electron microscopy was used to address the importance of surface energetics in determining the growth direction of the smallest nanowires. The ability to prepare well-defined molecular-scale single-crystal silicon nanowires opens up new opportunities for both fundamental studies and nanodevice applications.

We used vapor-liquid-solid (VLS) methods to synthesize discrete single-element semiconductor nanowires and multicomposition nanowire heterostructures, and then characterized their structure and composition using high-resolution electron microscopy (HRTEM) and analytical electron microscopy techniques. Imaging nanowires requires the modification of the established HRTEM imaging procedures for bulk material to take into consideration the effects of finite nanowire width and thickness. We show that high-resolution atomic structure images of nanowires less than 6 nm in thickness have lattice "streaking" due to the finite crystal lattice in two dimensions of the nanowire structure. Diffraction pattern analysis of nanowires must also consider the effects of a finite structure producing a large reciprocal space function, and we demonstrate that the classically forbidden 1/3 [422] reflections are present in the [111] zone axis orientation of silicon nanowires due to the finite thickness and lattice plane edge effects that allow incomplete diffracted beam cancellation. If the operating conditions are not carefully considered, we found that HRTEM image delocalization becomes apparent when employing a field emission transmission electron microscope (TEM) to image nanowires and such effects have been shown to produce images of the silicon lattice structure outside of the nanowire itself. We show that pseudo low-dose imaging methods are effective in reducing nanowire structure degradation caused by electron beam irradiation. We also show that scanning TEM (STEM) with energy dispersive X-ray microanalysis (EDS) is critical in the examination of multicomponent nanowire heterostructures.

Alkyl monolayers covalently bonded directly to n-type Si(111) surfaces have been prepared by UV illumination of the H−Si(111) surface while immersed in CH2CH−(CH2)n-3CH3 (n = 5−8) under high vacuum. The characterization by ellipsometry, infrared spectroscopy, and X-ray photoelectron spectroscopy shows that 1-alkenes form dense monolayers on the silicon surface. The electron-transfer rates from the surface of the electrode through the alkyl monolayers to decamethylferricenium acceptors in tetrahydrofuran have been measured. The rates are proportional to the decamethylferricenium concentration and also to the dopant density as determined from capacitance measurements. The rates show an exponential distance dependence with a decay constant of 1.00 ± 0.05 per CH2, similar to known behavior with alkanethiol monolayers on metal electrodes. The dependence of the rates on applied potential has a logarithmic slope of about 0.25F/RT at potentials negative of the flat-band potential derived from capacitance measurem...

Alkyl and fluorinated alkyl monolayers covalently bonded to the silicon (111) surface have been prepared by UV illumination of the H−Si(111) surface while immersed in a solution of olefin precursor under high vacuum. An alkoxy monolayer covalently bonded to the silicon (111) surface is formed by the reaction of the H−Si(111) surface with a heated solution of primary alcohol precursors under high vacuum. Ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscopy are used to characterize the three monolayers. The alkyl monolayer is measured to have the largest number of organic adsorbates per surface silicon atom. Properties of the monolayers on the silicon surface are probed by cyclic voltammetry. The hydrophobic alkyl monolayer slows the oxidation of the silicon surface by water. The three monolayers also slow the rate of electron transfer across the silicon−electrolyte interface by acting as a tunneling barrier. The alkyl monolayer in tetrahydrofuran exhibits a large and reproducible blo...

We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. The p-i-n nanowires were structurally characterized by transmission electron microscopy, and the spatially resolved electrical properties of individual nanowires were determined by electrostatic force and scanning gate microscopies. Temperature-dependent current-voltage measurements recorded from individual p-i-n devices show an increase in the breakdown voltage with temperature, characteristic of band-to-band impact ionization, or avalanche breakdown. Spatially resolved photocurrent measurements show that the largest photocurrent is generated at the intrinsic region located between the electrode contacts, with multiplication factors in excess of ca. 30, and demonstrate that single p-i-n nanowires function as avalanche photodiodes. Electron- and hole-initiated avalanche gain measurements performed by localized photoexcitation of the p-type and n-type regions yield multiplication factors of ca. 100 and 20, respectively. These results demonstrate the significant potential of single p-i-n nanowires as nanoscale avalanche photodetectors and open possible opportunities for studying impact ionization of electrons and holes within quasi-one-dimensional semiconductor systems.

Optical loss of a chemically-synthesized light-emitting nanowire can be reduced by embedding the nanowire in an optical microcavity. Design of nanowire/photonic crystal platform as well as characterization of nanowire embedded in race-track microresonator are presented.

We combine chemically-synthesized single nanowire emitters with lithographically-defined photonic crystal structures. Localized emission from engineered defects and light suppression in regions of the photonic crystal are demonstrated by photoluminescence imaging and spectroscopy measurements.

The mechanism of lasing in single cadmium sulfide (CdS) nanowire cavities was elucidated by temperature-dependent and time-resolved photoluminescence (PL) measurements. Temperature-dependent PL studies reveal rich spectral features and show that an exciton-exciton interaction is critical to lasing up to 75 K, while an exciton-phonon process dominates at higher temperatures. These measurements together with temperature and intensity dependent life-time and threshold studies suggest that lasing is due to formation of excitons, and moreover, have implications for the design of efficient, low-threshold nanowire lasers., 4 figures

We report a new and general strategy for efficient injection of carriers in active nanophotonic devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire heterostructures. n-GaN/InGaN/p-GaN CSS nanowire structures were grown by metal-organic chemical vapor deposition. Electron microscopy images reveal that the CSS nanowires are defect-free single crystalline structures, while energy-dispersive X-ray linescan profile studies confirm that shell thickness and composition can be well controlled during synthesis. Photoluminescence data further show that the optical properties are controlled by the CSS structure with strong emission from the InGaN shell centered at 448 nm. Importantly, electrical devices made by simultaneously contacting the n-type core and outer p-type shell of the CSS nanowires demonstrate that in forward bias these individual nanowires behave as light-emitting diodes (LEDs) with bright blue emission from the InGaN shell. The ability to rationally synthesize gallium nitride-based radial heterostructures should open up new opportunities for nanophotonics, including multicolor LEDs and lasers.

Single-source molecular precursors were used to synthesize II−VI compound semiconductor nanowires for the first time. Cadmium sulfide and zinc sulfide nanowires were prepared using cadmium diethyldithiocarbamate, Cd(S2CNEt2)2, and zinc diethyldithiocarbamate, Zn(S2CNEt2)2, respectively, as precursors in a gold nanocluster-catalyzed vapor−liquid−solid growth process. High-resolution transmission electron microscopy studies show that the CdS and ZnS nanowires are single-crystal wurtzite structures with stoichiometric compositions. In addition, photoluminescence measurements demonstrate that these nanowires exhibit high-quality optical properties. The applicability of our approach to the synthesis of other compound and alloy semiconductors nanowires as well as nanowire heterostructures of these materials is discussed.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Electric field modulation of visible and ultraviolet nanoscale lasers consisting of single CdS or GaN nanowires has been achieved using integrated, microfabricated electrodes. Modulation of laser emission intensity is achieved with no detectable change in the laser wavelength. The devices can also be operated below the lasing threshold to modulate the intensity of light propagating within the nanowire waveguide. Studies of the electric field dependence in devices of varied geometry indicate that modulation is due to an electroabsorption mechanism. These findings expand opportunities for multicolor, nanowire-based photonic devices and circuits.