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9 pags., 6 figs., Plasmonic metasurfaces based on the extraordinary optical transmission (EOT) effect can be designed to efficiently transmit specific spectral bands from the visible to the far-infrared regimes, offering numerous applications in important technological fields such as compact multispectral imaging, biological and chemical sensing, or color displays. However, due to their subwavelength nature, EOT metasurfaces are nowadays fabricated with nano- and micro-lithographic techniques, requiring many processing steps and carrying out in expensive cleanroom environments. In this work, we propose and experimentally demonstrate a novel, single-step process for the rapid fabrication of high-performance mid- and long-wave infrared EOT metasurfaces employing ultrafast direct laser writing. Microhole arrays composing extraordinary transmission metasurfaces were fabricated over an area of 4 mm2 in timescales of units of minutes, employing single pulse ablation of 40 nm thick Au films on dielectric substrates mounted on a high-precision motorized stage. We show how by carefully characterizing the influence of only three key experimental parameters on the processed micro-morphologies (namely, laser pulse energy, scan velocity, and beam shaping slit), we can have on-demand control of the optical characteristics of the extraordinary transmission effect in terms of transmission wavelength, quality factor, and polarization sensitivity of the resonances. To illustrate this concept, a set of EOT metasurfaces having different performances and operating in different spectral regimes has been successfully designed, fabricated, and tested. Comparison between transmittance measurements and numerical simulations has revealed that all the fabricated devices behave as expected, thus demonstrating the high performance, flexibility, and reliability of the proposed fabrication method. We believe that our findings provide the pillars for mass production of EOT metasurfaces with on-demand optical properties and create new research trends toward single-step laser fabrication of metasurfaces with alternative geometries and/or functionalities, This work was financially supported by the Spanish Research Agency (MCIU/AEI/Spain) through project TEC2017- 82464-R and PID2020-112770RB-C21, as well as by the National Research Council of Spain (CSIC) for the intramurales project 201850E057

7 pags., 9 figs., 1 tab., Periodic arrays of sub-wavelength-scale holes in plasmonic metal films are known to provide resonant transmission peaks via the extraordinary optical transmission (EOT) effect. Active control of the spectral position of such transmission peaks can be obtained by adding a layer of phase-change material (PCM) to the EOT device. Switching the PCM layer between its amorphous and crystalline states can shift the spectral position of the resonance, enabling potential applications in the fields of active filtering and sensing (e.g., multispectral sensing), and for signal modulation. Here, the design, fabrication, and characterization of active EOT devices are targeted at various important regions of the optical spectrum., Funding support is gratefully acknowledged from the EPSRC-QinetiQ TEAM-A Prosperity Partnership grant (EP/R004781/1), and from the EPSRC CDT in Metamaterials (EP/L015331/1). Thanks are also due to the various University of Exeter colleagues, in particular Dr. Liam Trimby, Dr. Santiago Garcia-Cuevas Carrillo, Dr. Yat-Yin Au, Dr. Hong Chang, Dr. Prarthana Vadegadde Dakappa, Mr. Joe Shields, Mr. Joe Pady, Ms. Hannah Barnard, and Prof. Geoff Nash, for contributing time, resources, and expertise to various aspects of this work. The authors also thank Dr. Geoff West of Warwick University, for providing cross-sectional TEM imaging

Thermally tunable optical metasurfaces based on chalcogenide phase-change materials (PCMs) - whose refractive indices between their amorphous and crystalline phases can be abruptly controlled via optical, electrical or thermal heat stimuli - are currently one of the most promising approaches towards the creation of novel, compact, and fast reconfigurable nanophotonic devices. Yet, such a technology currently faces various non-trivial technological and engineering challenges that need to be overcome before implementing them in real-world applications [1] . One of the most critical aspects for PCM metasurfaces to be successful is the achievement of in-situ electrical switching without severely compromising the optical performance. For this purpose, good electrical conductors (metals) with high melting points (i.e. above the melting point of GeSbTe based alloys where T melt ~ 630 ᵒC) are required to avoid long-term degradation. In addition, such metallic elements suffer from thermally activated atomic diffusion into PCMs and/or semiconductors such as Ge 2 Sb 2 Te 5 (GST) or silicon, which results in the creation of parasitic interfacial gold/silver tellurides and gold/silver silicides that can catastrophically and irreversibly degrade device optical performance [2] , leading to unreliable device designs.

Plasmonic metasurfaces based on the extraordinary optical transmission effect (EOT) can be deliberately designed to efficiently transmit specific spectral bands from the visible to the long-infrared regimes, but can also provide high electric field confinement in regions much smaller than the operation wavelength [1] . Such nano/microphotonic devices (which, as shown in Fig. 1(a) , consist of subwavelength periodically or randomly arranged apertures on ultrathin metallic films) could therefore find applications in important technological fields such as compact multispectral imaging, biosensing, transmissive colour displays, non-linear optics or enhancement of the Raman signal. However, due to their subwavelength nature, fabrication of EOT metasurfaces operating in the visible and infrared spectral regimes is typically conducted through expensive, micro- and nanofabrication techniques carried out in strict cleanroom environments. Therefore, patterning of large areas required for applications currently dominated by conventional optical elements are translated into several fabrication steps and long lithography writing times: procedures that significantly increase the operation cost and energy consumption to a non-acceptable level for most industrial entities.

13 pags., 9 figs., Monitoring the laser-induced melting and solidification dynamics of Ge upon laser irradiation is an enormous challenge due to the short penetration depth of its liquid phase. In this work, real-time pump-probe experiments in combination with finite element calculations have been employed to investigate the melting and solidification dynamics of germanium upon ns and fs laser pulse irradiation (λ = 800 nm). Excellent agreement between experiments and simulations allowed us to indirectly determine additional time- and depth-dependent information about the transformation dynamics of germanium, including the thickness evolution of the molten layer, as well as its melting and solidification velocities for the two pulse durations for different fluences. Our results reveal considerable differences in the maximum thickness of the molten Ge superficial layers at sub-ablative fluences for ns and fs pulses, respectively. Maximum melt-in velocities of 39 m s−1 were obtained for ns pulses at high fluences, compared to non-thermal melting of a thin layer within 300 fs for fs pulses already at moderate fluences. Maximum solidification velocities were found to be 16 m s−1 for ns pulses, and up to 55 m s−1 for fs pulses. Weak signs of amorphization were observed for fs excitation, suggesting that the lower limit of solidification velocities for a complete amorphization is above 55 m s−1. In addition, we show high precision measurements of the melt-in velocities over the first 20 nm by means of fs microscopy with sub-ps temporal resolution. Here, differences of the melt-in process of several orders of magnitude were observed, ranging from virtually instantaneous melting within less than 2 ps even for a moderate peak fluence up to 200 ps for fluences close to the melting threshold., This work was financially supported by the Spanish Research Agency (MCIU/AEI/Spain) through Project PID2020- 112770RB-C21. The authors acknowledge a pre-doctoral fellowship from the MICINN for N Casquero. C Ruiz de Galarreta acknowledges the Margarita Salas fellowship (CA1/RSUE/2021-00829) from the Spanish Government.

Materials of which the refractive indices can be thermally tuned or switched, such as in chalcogenide phase-change alloys, offer a promising path towards the development of active optical metasurfaces for the control of the amplitude, phase, and polarization of light. However, for phase-change metasurfaces to be able to provide viable technology for active light control, in situ electrical switching via resistive heaters integral to or embedded in the metasurface itself is highly desirable. In this context, good electrical conductors (metals) with high melting points (i.e., significantly above the melting point of commonly used phase-change alloys) are required. In addition, such metals should ideally have low plasmonic losses, so as to not degrade metasurface optical performance. This essentially limits the choice to a few noble metals, namely, gold and silver, but these tend to diffuse quite readily into phase-change materials (particularly the archetypal Ge2Sb2Te5 alloy used here), and into dielectric resonators such as Si or Ge. In this work, we introduce a novel hybrid dielectric/plasmonic metasurface architecture, where we incorporated a thin Ge2Sb2Te5 layer into the body of a cubic silicon nanoresonator lying on metallic planes that simultaneously acted as high-efficiency reflectors and resistive heaters. Through systematic studies based on changing the configuration of the bottom metal plane between high-melting-point diffusive and low-melting-point nondiffusive metals (Au and Al, respectively), we explicitly show how thermally activated diffusion can catastrophically and irreversibly degrade the optical performance of chalcogenide phase-change metasurface devices, and how such degradation can be successfully overcome at the design stage via the incorporation of ultrathin Si3N4 barrier layers between the gold plane and the hybrid Si/Ge2Sb2Te5 resonators. Our work clarifies the importance of diffusion of noble metals in thermally tunable metasurfaces and how to overcome it, thus helping phase-change-based metasurface technology move a step closer towards the realization of real-world applications.

The Ge2Sb2Te5 phase-change alloy (GST) is known for its dramatic complex refractive index (and electrical) contrast between its amorphous and crystalline phases. Switching between such phases is also non-volatile and can be achieved on the nanosecond timescale. The combination of GST with the widespread SiN integrated optical waveguide platform led to the proposal of the all-optical integrated phase-change memory, which exploits the interaction of the guided mode evanescent field with a thin layer of GST on the waveguide top surface. The relative simplicity of the architecture allows for its flexible application for data storage, logic gating, arithmetic and neuromorphic computing. Read operation relies on the transmitted signal optical attenuation, due to the GST extinction coefficient. Write/erase operations are performed via the same optical path, with a higher power ad-hoc pulsing scheme, which locally increases the temperature and triggers either the melt-quench process (write) or recrystallization (erase), encoding the information into the GST crystal fraction. Here we investigate the physical mechanisms involved in the write/erase and read processes via computational methods, with the view to explore novel architecture concepts that improve memory speed, energy efficiency and density. We show the achievements of the development of a 3D simulation framework, performing self-consistent calculations for wavepropagation, heat diffusion and phase-transition processes. We illustrate a viable memory optimization route, which adopts sub-wavelength plasmonic dimer nanoantenna structures to harvest the optical energy and maximize light-matter interaction. We calculate both a speed and energy efficiency improvement of around one order of magnitude, with respect to the conventional (non-plasmonic) device architecture.

Integrated phase-change photonic memory devices offer a novel route to non-volatile storage and computing that can be carried out entirely in the optical domain, obviating the necessity for time and energy consuming opto-electrical conversions. Such memory devices generally consist of integrated waveguide structures onto which are fabricated small phase-change memory cells. Switching these cells between their amorphous and crystalline states modifies significantly the optical transmission through the waveguide, so providing memory, and computing, functionality. To carry out such switching, optical pulses are sent down the waveguide, coupling to the phase-change cell, heating it up, and so switching it between states. While great strides have been made in the development of integrated phase-change photonic devices in recent years, there is always a pressing need for faster switching times, lower energy consumption and a smaller device footprint. In this work, therefore, we propose the use of plasmonic enhancement of the light-matter interaction between the propagating waveguide mode and the phase-change cell as a means to faster, smaller and more energy-efficient devices. In particular, we propose a form of plasmonic dimer nanoantenna of significantly sub-micron size that, in simulations, offers significant improvements in switching speeds and energies. Write/erase speeds in the range 2 to 20 ns and write/erase energies in the range 2 to 15 pJ were predicted, representing improvements of one to two orders of magnitude when compared to conventional device architectures.

The evaluation and comparison of the optical properties in the O and C bands of silicon nitride rib waveguides with integrated Ge2Sb2Te5 phase-change cells is reported. In straight rib waveguides, a high transmission contrast is observed in both bands when the Ge2Sb2Te5 cell is switched between states, being up to 2.5 dB/μm in the C-band and 6.4 dB/μm in the O-band. In the case of silicon nitride ring resonator waveguides, high quality factor resonances (Q ∼ 105) are found in both bands, leading to the provision of an ON-OFF switch characterized by an extinction ratio of 12 and 18 dB in O and C bands respectively. Finally, with the view to provide a comparison of the wavelength-dependent optical switching of the phase-change cell, a 3-dimensional finite-element method simulation is performed and a comparison of the optical-to-thermal energy conversion in both bands given.

All-dielectric metasurfaces comprising arrays of nanostructured high-refractive-index materials are re-imagining what is achievable in terms of the manipulation of light. However, the functionality of conventional dielectric-based metasurfaces is fixed by design; thus, their optical response is locked in at the fabrication stage. A far wider range of applications could be addressed if dynamic and reconfigurable control were possible. We demonstrate this here via the novel concept of hybrid metasurfaces, in which reconfigurability is achieved by embedding sub-wavelength inclusions of chalcogenide phase-change materials within the body of silicon nanoresonators. By strategic placement of an ultra-thin G e 2 S b 2 T e 5 layer and reversible switching of its phase-state, we show individual, multilevel, and dynamic control of metasurface resonances. We showcase our concept via the design, fabrication, and characterization of metadevices capable of dynamically filtering and modulating light in the near infrared (O and C telecom bands), with modulation depths as high as 70% and multilevel tunability. Finally, we show numerically how the same approach can be re-scaled to shorter wavelengths via appropriate material selection, paving the way to additional applications, such as high-efficiency vivid structural color generators in the visible spectrum. We believe that the concept of hybrid all-dielectric/phase-change metasurfaces presented in this work could pave the way for a wide range of design possibilities in terms of multilevel, reconfigurable, and high-efficiency light manipulation.

We present novel phase-change material based metasurfaces for dynamic, recnofigurable and efficient wavefront shaping in the infrared spectrum. Dynamic control and reconfigurability was obtained by incorporating an ultra-thin layer of the widely-used phase change material Ge2Sb2Te5. Our approach exploits hybrid dielectic/plasmonic resonances to achieve local (subwavelength) phase control of light with low losses. A full 2π optical phase coverage was achieved with this approach, which allows for a wide flexibility in terms of realizable designs. To illustrate this concept, dynamic beam steering devices and reconfigurable planar focusing mirrors (both operating at optical telecommunications wavelengths) and their performance investigated. Absolute efficiencies up to 65% are achieved, significantly higher than the efficiencies of more commonly reported plasmonic-based phase-change metasurfaces.

The surroundings of a nuclear fusion reactor experiments the presence of magnetic fields, which affects the performance of any diagnostic optical system located nearby. It is therefore necessary to determine with precision the optimum location for the diagnostic and to design magnetically robust optical imaging systems. The purpose of the present optical diagnostic is to measure the temperature dispersion in the vicinity of the NBI (neutral beam injectors) that heat the confined plasma inside the fusion device. The measure is made by processing the information contained in the images of the objects inside the chamber in the 7 to 16 um far infrared wavelength range, through a F2Ba vacuum viewport window. Our main concern is to design the optical relay from this viewport to the IR sensor, a FPA uncooled microbolometer 320x240px, for different axial distances, with a field of view of 24°x18° and 1.3 mrad of IFOV spatial resolution. The proposed optical relay system includes the use of a reflexive relay (aspheric concave mirrors) and a refractive and imaging camera. The system has being corrected for primary aberrations and optimized to allow a future second optical system working in visible range after the mirrors, by including a dichroic beamsplitter.

Gap-plasmon metasurfaces based on metal-insulator-metal (MIM) nanostructures have been extensively employed over the last years, as they provide a versatile design platform for local and/or global control of the amplitude, phase and polarisation of light from the visible to the THz domain [1] . However, current research in plasmonic metasurfaces lacks of good material building blocks, as the material choice is fundamentally limited to Ag, Au and Al [2] . Particularly in the visible spectrum, Ag and Al are the preferred (and the only realistic) option towards the development of MIM metasurfaces, as they suffer from lower plasmonic losses with respect to other metallic elements. Recently, bismuth-based nanostructures have been proved as an excellent material for plasmonics in the ultraviolet and visible [3] , [4] , [5] . However, its use in MIM metasurfaces for the visible spectrum remains largely unexplored. Furthermore, bismuth exhibits a relatively low melting temperature (~270 °C), with its solid-to-liquid phase transition being accompanied by significant changes in its permittivity function [6] . This potentially paves the way for active plasmonics [7] .