50 results on '"Casady, Jeff"'
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2. High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation
3. Highly Uniform SiC Epitaxy for MESFET Fabrication
4. Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET
5. Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
6. High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
7. Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
8. 15 kV n-GTOs in 4H-SiC
9. High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications
10. Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes
11. 650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules
12. A 200 kVA electric vehicle traction drive inverter having enhanced performance over its entire operating region
13. Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
14. Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
15. Record-low 10mΩ SiC MOSFETs in TO-247, rated at 900V
16. Development of medium voltage SiC power technology for next generation power electronics
17. SiC JFET Power Modules for Reliable 250°C Operation
18. Demonstration of SiC Vertical Trench JFET Reliability
19. High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC
20. Silicon Carbide Power Electronics for High-Temperature Power Conversion and Solid-State Circuit Protection in Aircraft Applications
21. Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes
22. Parameter Extraction Procedure for Vertical SiC Power JFET
23. A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
24. Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules
25. Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current
26. Increase of SiC Substrate Resistance Induced by Annealing
27. Improved two-stage DC-coupled gate driver for enhancement-mode SiC JFET
28. Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
29. SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
30. High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
31. High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
32. High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications
33. A Review of SiC Power Switch: Achievements, Difficulties and Perspectives
34. Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
35. Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
36. Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
37. Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
38. Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
39. Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination
40. High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications.
41. High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
42. 4H-SiC Device Scaling Development on Repaired Micropipe Substrates
43. Demonstration of Deep (80μm) RIE Etching of SiC for MEMS and MMIC Applications
44. Preliminary Investigation of SiC on Silicon for Biomedical Applications
45. 1400 V 4H-SiC Power MOSFETs
46. 4H-SiC Gate Turn-Off (GTO) Thyristor Development
47. Development of medium voltage SiC power technology for next generation power electronics.
48. Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current
49. High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
50. Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
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