1. Photoluminescence of lead-related optical centers in single-crystal diamond
- Author
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Tchernij, S. Ditalia, Lühmann, T., Forneris, J., Herzig, T., Küpper, J., Damin, A., Santonocito, S., Traina, P., Moreva, E., Celegato, F., Pezzagna, S., Degiovanni, I. P., Jakšić, M., Genovese, M., Meijer, J., and Olivero, P.
- Subjects
Condensed Matter - Materials Science ,Quantum Physics - Abstract
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions, while none of the reported features is observed in reference samples implanted with C ions. Furthermore, PL measurements performed as a function of sample temperature (143-300 K range) and un- der different excitation wavelengths (532 nm, 514 nm, 405 nm) suggest that the complex spectral features observed in Pb-implanted diamond might be related to a variety of different defects and/or charge states. This work follows from previous reports on optically active centers in diamond based on group IV impurities, such as Si, Ge and Pb. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a solid basis for the devel- opment of a new generation of quantum-optical devices., Comment: 7 pages, 4 figures
- Published
- 2018
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