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The recent efficiency boosting of Cu(In,Ga)Se2 (CIGS) solar cells is undoubtedly triggered by heavy alkali postdeposition treatments (PDTs). However, the effects are not obvious under monolithically integrated CIGS modules where various current‐shunting sources can deteriorate the device performance. Herein, It is reported that KF PDT can effectively suppress the major shunting sources caused by P1 and P3 laser scribing for monolithic interconnection, reducing the cell‐to‐module (CTM) efficiency gap in CIGS photovoltaics. CIGS with NaF PDT exhibits nearly isotropic and high hole mobilities, causing a large CTM efficiency loss. CIGS with additional KF PDT, on the other hand, reveals much lower in‐plane hole mobility than the out‐of‐plane component, significantly increasing the P1 shunt resistance without exacerbating the photocarrier extraction in the active area. It is suggested that such anisotropic charge transport is due to carrier scattering by low‐conductivity phases at the CIGS grain boundaries. Furthermore, passivation of the front junction by KF PDT raises the tolerance to P3 scribing‐induced damage, increasing the P3 shunt resistance while preserving the junction property unlike the NaF PDT case. The work implies that the recent trend of employing heavy alkali PDTs for a high‐efficiency cell is also crucial for designing a high‐efficiency CIGS module. [ABSTRACT FROM AUTHOR]

Abstract: A general methodology is reported to create organic–inorganic hybrid metal halide perovskite films with enlarged and preferred‐orientation grains. Simply pressing polyurethane stamps with hexagonal nanodot arrays on partially dried perovskite intermediate films can cause pressure‐induced perovskite crystallization. This pressure‐induced crystallization allows to prepare highly efficient perovskite solar cells (PSCs) because the preferred‐orientation and enlarged grains with low‐angle grain boundaries in the perovskite films exhibit suppressed nonradiative recombination. Consequently, the photovoltaic response is dramatically improved by the uniaxial compression in both inverted‐planar PSCs and normal PSCs, leading to power conversion efficiencies of 19.16%. [ABSTRACT FROM AUTHOR]

To further increase the open‐circuit voltage (Voc) of perovskite solar cells (PSCs), many efforts have been devoted to doping the TiO2 electron transport/selective layers by using metal dopants with higher electronegativity than Ti. However, those dopants can introduce undesired charge traps that hinder charge transport through TiO2, so the improvement in the Voc is often accompanied by an undesired photocurrent density–voltage (J–V) hysteresis problem. Herein, it is demonstrated that the use of a rapid flame doping process (40 s) to introduce cobalt dopant into TiO2 not only solves the J–V hysteresis problem but also increases the Voc and power conversion efficiency of both mesoscopic and planar PSCs. The reasons for the simultaneous improvements are two fold. First, the flame‐doped Co‐TiO2 film forms Co‐Ov (cobalt dopant‐oxygen vacancy) pairs and hence reduces the number density of Ti3+ trap states. Second, Co doping upshifts the band structure of TiO2, facilitating efficient charge extraction. As a result, for planar PSCs, the flame doping of Co increases the efficiency from 17.1% to 18.0% while reducing the hysteresis from 16.0% to 1.7%. Similarly, for mesoscopic PSCs, the flame doping of Co increases the efficiency from 18.5% to 20.0% while reducing the hysteresis from 7.0% to 0.1%. A rapid flame‐processed cobalt‐doped TiO2 for highly efficient perovskite solar cells with resolved hysteresis is described. The flame doping of Co2+ forms cobalt‐oxygen vacancy pairs in the TiO2 lattice that reduces the intrinsic defective Ti3+ and upshifts the band structure of TiO2, solving the current density‐voltage (J–V) hysteresis and enhancing the efficiency of both mesoscopic and planar perovskite solar cells. [ABSTRACT FROM AUTHOR]

To further increase the open‐circuit voltage (Voc) of perovskite solar cells (PSCs), many efforts have been devoted to doping the TiO2 electron transport/selective layers by using metal dopants with higher electronegativity than Ti. However, those dopants can introduce undesired charge traps that hinder charge transport through TiO2, so the improvement in the Voc is often accompanied by an undesired photocurrent density–voltage (J–V) hysteresis problem. Herein, it is demonstrated that the use of a rapid flame doping process (40 s) to introduce cobalt dopant into TiO2 not only solves the J–V hysteresis problem but also increases the Voc and power conversion efficiency of both mesoscopic and planar PSCs. The reasons for the simultaneous improvements are two fold. First, the flame‐doped Co‐TiO2 film forms Co‐Ov (cobalt dopant‐oxygen vacancy) pairs and hence reduces the number density of Ti3+ trap states. Second, Co doping upshifts the band structure of TiO2, facilitating efficient charge extraction. As a result, for planar PSCs, the flame doping of Co increases the efficiency from 17.1% to 18.0% while reducing the hysteresis from 16.0% to 1.7%. Similarly, for mesoscopic PSCs, the flame doping of Co increases the efficiency from 18.5% to 20.0% while reducing the hysteresis from 7.0% to 0.1%. A rapid flame‐processed cobalt‐doped TiO2 for highly efficient perovskite solar cells with resolved hysteresis is described. The flame doping of Co2+ forms cobalt‐oxygen vacancy pairs in the TiO2 lattice that reduces the intrinsic defective Ti3+ and upshifts the band structure of TiO2, solving the current density‐voltage (J–V) hysteresis and enhancing the efficiency of both mesoscopic and planar perovskite solar cells. [ABSTRACT FROM AUTHOR]

Mesoporous TiO 2 nanoparticle (NP) films are broadly used as electrodes in photoelectrochemical cells, dye-sensitized solar cells (DSSCs), and perovskite solar cells (PSCs). State-of-the-art mesoporous TiO 2 NP films for these solar cells are fabricated by annealing TiO 2 paste-coated fluorine-doped tin oxide glass in a box furnace at 500 °C for ≈30 min. Here, the use of a nontraditional reactor, i.e., flame, is reported for the high throughput and ultrafast annealing of TiO 2 paste (≈1 min). This flame-annealing method, compared to conventional furnace annealing, exhibits three distinct benefits. First, flame removes polymeric binders in the initial TiO 2 paste more completely because of its high temperature (≈1000 °C). Second, flame induces strong interconnections between TiO 2 nanoparticles without affecting the underlying transparent conducting oxide substrate. Third, the flame-induced carbothermic reduction on the TiO 2 surface facilitates charge injection from the dye/perovskite to TiO 2 . Consequently, when the flame-annealed mesoporous TiO 2 film is used to fabricate DSSCs and PSCs, both exhibit enhanced charge transport and higher power conversion efficiencies than those fabricated using furnace-annealed TiO 2 films. Finally, when the ultrafast flame-annealing method is combined with a fast dye-coating method to fabricate DSSC devices, its total fabrication time is reduced from over 3 h to ≈10 min., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)