50 results on '"Chang, Jin-Fa"'
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2. Complementary Current-Reused 3.7–11.9 GHz LNA Using Body-Floating and Self-Bias Technique for Sub-6 GHz 5G Communications
3. 28 GHz coupled-line-based CMOS power combiners and phase shifter, and power amplifiers with the power combiners
4. Design and analysis of noninverting single-spiral CMOS Wilkinson power dividers and their quadrature couplers and baluns
5. Coupled-line-based millimeter-wave CMOS spiral power dividers with tapered TLs
6. Design and Analysis of 28 GHz CMOS LNA and VGA Using Gain-Linearity-Boosting and Body Floating Techniques
7. CMOS LNA and VGA for 5G NR Using Gain-Linearity-Boosting and Body Floating Techniques
8. SPDT Switch Using λ/9-TL-Based-λ/4-TL and DTMOS With Floating R for 28-GHz 5G New Radio
9. Design and Analysis of Complementary Metal–Oxide–Semiconductor Single-Pole Double-Throw Switches for 28 GHz 5G New Radio
10. 3.8-mW 26–29-GHz CMOS LNA With 21.6-dB Gain and 2.49-dB NF$_{\mathrm{avg}}$ Using Dual Self-Bias and Gain Boosting
11. 5.85-mW 3.1–23.7-GHz Two-Stage CMOS VGA With 2.53-dB NF Using Concurrent Current Steering
12. 7.4-mW, 22.7–29.7 GHz CMOS VGA With 23.7 dB (19.2 to −4.5 dB) Gain Tuning Range and 3.26 dB NFavg
13. A 13.7-mW 21–29-GHz CMOS LNA With 21.6-dB Gain and 2.74-dB NF for 28-GHz 5G Systems
14. Spiral-TL-Based Compact Ka-Band SPDT Switch and Power Divider
15. Push-Push VCO with PN- and Pout-Enhanced Off-State Parallel FETs
16. High Linearity DC-38 GHz CMOS SPDT Switch
17. 3–9-GHz CMOS LNA Using Body Floating and Self-Bias Technique for Sub-6-GHz 5G Communications
18. A high-voltage driving 60 GHz power amplifier with Psat of 13 dBm and PAE of 9.1% in 90 nm CMOS for IEEE 802.11ad communication systems
19. A High‐Voltage Driving 60‐GHz Power Amplifier with Psat of 13 dBm and PAE of 9.1% in 90‐nm CMOS for IEEE 802.11ad Communication Systems
20. Design and implementation of a 2.8‐dB insertion loss v‐band bandpass filter in 0.13‐μm cmos technology
21. A low‐power 3.2–9.7 GHz ultra‐wideband low‐noise amplifier with excellent stop‐band rejection using 0.18‐μm CMOS technology
22. A 3.1‐dB NF, 21.31 dB gain micromachined 3–10 GHz distributed amplifier for UWB systems in 0.18‐μm CMOS technology
23. A low-power 3.2∼9.7GHz ultra-wideband low noise amplifier with excellent stop-band rejection using 0.18µm CMOS technology
24. Analysis and Design of CMOS Distributed Amplifier Using Inductively Peaking Cascaded Gain Cell for UWB Systems
25. A High-Performance Distributed Amplifier Using Multiple Noise Suppression Techniques
26. A 3.9-dB NF, 24.5-dB gain 0.3∼10.5-GHZ distributed amplifier using dual-inductive-peaking cascade gain cell for UWB systems in 0.18-μm CMOS
27. A V-band CMOS sub-harmonic mixer with integrated frequency doubler and 180°out-of-phase splitter
28. A 2.76 mW, 3–10 GHz ultra-wideband LNA using 0.18 µm CMOS technology
29. A DC-10.5-GHz CMOS Distributed Amplifier with 3.2±0.3 dB NF, 10.5±1.4 dB Gain and ±13.8 ps Group Delay Variation
30. A 2.76‐mW, 3‐ to 10‐GHz ultrawideband LNA using 0.18‐μm CMOS technology
31. An 18.85 mW 20-29 GHz wideband CMOS low-noise amplifier with 3.85 ± 0.25 dB noise figure and 18.1 ± 1.9 dB gain
32. Miniature 1.87‐dB insertion‐loss V‐band CMOS bandpass filter with two enhanced finite transmission zeros
33. A 18.85 mW 20–29 GHz wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB gain
34. A 4.9-dB NF 53.5–62-GHz micro-machined CMOS wideband LNA with small group-delay-variation
35. A 60 GHz CMOS receiver front-end with integrated 180 ° out-of-phase wilkinson power divider
36. Design and implementation of a high‐performance V‐band CMOS bandpass filter
37. 1.8-dB insertion-loss planar UWB CMOS bandpass filter with suspended inductors
38. A micromachined V-band CMOS bandpass filter with 2-dB insertion-loss
39. Miniature 60‐GHz‐band bandpass filter with 2.55‐dB insertion‐loss using standard 0.13 μm CMOS technology
40. A Miniature Micro-Machined Millimeter-Wave Bandpass Filter By Complementary Metal–Oxide–Semiconductor Compatible Inductively-Coupled-Plasma Deep-Trench Technology
41. A K-band low-noise amplifier using shunt RC-feedback and series inductive-peaking techniques
42. An analysis of substrate effects on transmission‐lines for millimeter‐wave CMOS RFIC applications
43. A high‐performance miniaturized 3 15.5‐GHZ 13‐DB CMOS distributed amplifier
44. A High-Performance Micromachined RF Monolithic Transformer With Optimized Pattern Ground Shields (OPGS) for UWB RFIC Applications
45. Ultra-Low-Loss and Broadband Micromachined Inductors and Transformers for 30-100 GHz CMOS RFIC Applications by CMOS-Compatible ICP Deep Trench Technology
46. High-Coupling and Ultra-Low-Loss Interlaced Stacked Transformers for 60-100 GHz CMOS RFIC Applications
47. A High-Voltage Driving 60-GHz Power Amplifier with Psat of 13 dBm and PAE of 9.1% in 90-nm CMOS for IEEE 802.11ad Communication Systems.
48. A 3.9-dB NF, 24.5-dB gain 0.3∼10.5-GH Z distributed amplifier using dual-inductive-peaking cascade gain cell for UWB systems in 0.18-μm CMOS.
49. A 2.76-mW, 3- to 10-GHz ultrawideband LNA using 0.18-μm CMOS technology.
50. A 18.85 mW 20–29 GHz wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB gain.
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