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Cu3Sn was recently predicted to host topological Dirac fermions, but related research is still in its infancy. The growth of large and high-quality Cu3Sn single crystals is, therefore, highly desired to investigate the possible topological properties. In this work, we report the single crystal growth of Cu3Sn by Czochralski (CZ) method. Crystal structure, chemical composition, and transport properties of Cu3Sn single crystals were analyzed to verify the crystal quality. Notably, compared to the mm-sized crystals from a molten Sn-flux, the cm-sized crystals obtained by the CZ method are free from contamination from flux materials, paving the way for the follow-up works.

One critical factor for bolometer sensitivity is efficient electromagnetic heating of thermistor materials, which plasmonic nanogap structures can provide through the electric field enhancement. In this report, using finite element method simulation, electromagnetic heating of nanorod dimer antennas with a nanogap filled with vanadium dioxide (VO2) was studied for long-wavelength infrared detection. Because VO2 is a thermistor material, the electrical resistance between the two dimer ends depends on the dimer’s temperature. The simulation results show that, due to the high heating ability of the nanogap, the temperature rise is several times higher than expected from the areal coverage. This excellent performance is observed over various nanorod lengths and gap widths, ensuring wavelength tunability and ultrafast operating speed, thereby making the dimer structures a promising candidate for high sensitivity bolometers.

Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO$_{3}$, which boosts square-tensile-strain to BaTiO$_{3}$ and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti$^{3+}$ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates., According to the Copyright Policy, the submission version (before peer-review and revision)

Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels., Comment: accepted in Sci. Adv

Strain provides autonomous control of atomic building blocks for the synthesis of functional materials., In past few decades, there have been substantial advances in theoretical material design and experimental synthesis, which play a key role in the steep ascent of developing functional materials with unprecedented properties useful for next-generation technologies. However, the ultimate goal of synthesis science, i.e., how to locate atoms in a specific position of matter, has not been achieved. Here, we demonstrate a unique way to inject elements in a specific crystallographic position in a composite material by strain engineering. While the use of strain so far has been limited for only mechanical deformation of structures or creation of elemental defects, we show another powerful way of using strain to autonomously control the atomic position for the synthesis of new materials and structures. We believe that our synthesis methodology can be applied to wide ranges of systems, thereby providing a new route to functional materials.

Considerable attention has been directed to understanding the influence of heterointerfaces between Ruddlesden–Popper (RP) phases and ABO3 perovskites on the kinetics of oxygen electrocatalysis at elevated temperatures. Here, we report the effect of heterointerfaces on the oxygen surface exchange kinetics by employing heteroepitaxial oxide thin films formed by decorating LaNiO3 (LNO) on La1.85Sr0.15CuO4 (LSCO) thin films. Regardless of LNO decoration, tensile in-plane strain on LSCO films does not change. The oxygen surface exchange coefficients (kchem) of LSCO films extracted from electrical conductivity relaxation curves significantly increase with partial decorations of LNO, whereas full LNO coverage leads to the reduction in the kchem of LSCO films. The activation energy for oxygen exchange in LSCO films significantly decreases with partial LNO decorations in contrast with the full coverage of LNO. Optical spectroscopy reveals the increased oxygen vacancies in the partially covered LSCO films relative to the undecorated LSCO film. We attribute the enhanced oxygen surface exchange kinetics of LSCO to the increased oxygen vacancies by creating the heterointerface between LSCO and LNO.

Oxygen defects are essential building blocks for designing functional oxides with remarkable properties, ranging from electrical and ionic conductivity to magnetism and ferroelectricity. Oxygen defects, despite being spatially localized, can profoundly alter global properties such as the crystal symmetry and electronic structure, thereby enabling emergent phenomena. In this work, we achieved tunable metal–insulator transitions (MIT) in oxide heterostructures by inducing interfacial oxygen vacancy migration. We chose the non-stoichiometric VO2-δ as a model system due to its near room temperature MIT temperature. We found that depositing a TiO2 capping layer on an epitaxial VO2 thin film can effectively reduce the resistance of the insulating phase in VO2, yielding a significantly reduced ROFF/RON ratio. We systematically studied the TiO2/VO2 heterostructures by structural and transport measurements, X-ray photoelectron spectroscopy, and ab initio calculations and found that oxygen vacancy migration from TiO2 to VO2 is responsible for the suppression of the MIT. Our findings underscore the importance of the interfacial oxygen vacancy migration and redistribution in controlling the electronic structure and emergent functionality of the heterostructure, thereby providing a new approach to designing oxide heterostructures for novel ionotronics and neuromorphic-computing devices.

Chiral interactions in magnetic systems can give rise to rich physics manifested, for example, as nontrivial spin textures. The foremost interaction responsible for chiral magnetism is the Dzyaloshinskii-Moriya interaction (DMI), resulting from inversion symmetry breaking in the presence of strong spin-orbit coupling. However, the atomistic origin of DMIs and their relationship to emergent electrodynamic phenomena, such as topological Hall effect (THE), remain unclear. Here, we investigate the role of interfacial DMIs in 3d-5d transition metal-oxide-based LaMnO3/SrIrO3 superlattices on THE from a chiral spin texture. By additively engineering the interfacial inversion symmetry with atomic-scale precision, we directly link the competition between interfacial collinear ferromagnetic interactions and DMIs to an enhanced THE. The ability to control the DMI and resulting THE points to a pathway for harnessing interfacial structures to maximize the density of chiral spin textures useful for developing high-density information storage and quantum magnets for quantum information science.

Artificial heterostructures composed of dissimilar transition metal oxides provide unprecedented opportunities to create remarkable physical phenomena. Here, we report a means to deliberately control the orbital polarization in LaNiO3 (LNO) through interfacing with SrCuO2 (SCO), which has an infinite-layer structure for CuO2. Dimensional control of SCO results in a planar-type (P–SCO) to chain-type (C–SCO) structure transition depending on the SCO thickness. This transition is exploited to induce either a NiO5 pyramidal or a NiO6 octahedral structure at the SCO/LNO interface. Consequently, a large change in the Ni d orbital occupation up to ~30% is achieved in P–SCO/LNO superlattices, whereas the Ni eg orbital splitting is negligible in C–SCO/LNO superlattices. The engineered oxygen coordination triggers a metal-to-insulator transition in SCO/LNO superlattices. Our results demonstrate that interfacial oxygen coordination engineering provides an effective means to manipulate the orbital configuration and associated physical properties, paving a pathway towards the advancement of oxide electronics., In correlated materials, physical properties depend on orbital occupancy and polarization. Here, a way to control the oxygen coordination via dimensionality of superlattices is presented that results in the change of orbital occupancy by 30%, which is larger than what has been achieved by other methods.

5d pyrochlore oxides with all-in-all-out magnetic order are prime candidates for realizing strongly correlated, topological phases of matter. Despite significant effort, a full understanding of all-in-all-out magnetism remains elusive as the associated magnetic excitations have proven difficult to access with conventional techniques. Here we report a Raman spectroscopy study of spin dynamics in the all-in-all-out magnetic state of the 5d pyrochlore Cd2Os2O7. Through a comparison between the two-magnon scattering and spin-wave theory, we confirm the large single ion anisotropy in this material and show that the Dzyaloshinskii–Moriya and exchange interactions play a significant role in the spin-wave dispersions. The Raman data also reveal complex spin–charge–lattice coupling and indicate that the metal–insulator transition in Cd2Os2O7 is Lifshitz-type. Our work establishes Raman scattering as a simple and powerful method for exploring the spin dynamics in 5d pyrochlore magnets. Pyrochlore 5d transition metal oxides are expected to have interesting forms of magnetic order but are hard to study with conventional probes. Here the authors show that Raman scattering can be used to measure magnetic excitations in Cd2Os2O7 and that it exhibits complex spin-charge-lattice coupling.

Perovskite rhodates are characterized by intermediate strengths of both electronic correlation as well as spin-orbit coupling (SOC) and usually behave as moderately correlated metals. A recent publication [Phys. Rev. B 95, 245121 (2017)] on epitaxial ${\mathrm{SrRhO}}_{3}$ thin films reported a bad-metallic behavior and suggested the occurrence of antiferromagnetism below 100 K. We have further studied this ${\mathrm{SrRhO}}_{3}$ thin film by hard x-ray photoemission spectroscopy and found a very small density of states (DOS) at the Fermi level (${E}_{F}$), which is consistent with the previously reported bad-metallic behavior. However, the absence of DOS persists up to room temperature, which contradicts the explanation of antiferromagnetic transition at $\ensuremath{\sim}100$ K. We also employed electronic structure calculations within the framework of density functional theory and dynamical mean-field theory. In contrast to the photoemission results, our calculations indicate metallic behaviors of both bulk ${\mathrm{SrRhO}}_{3}$ and the ${\mathrm{SrRhO}}_{3}$ thin film, and a stronger correlation effect was observed in the thin film than that in the bulk. The calculated uniform magnetic susceptibility is substantially larger in the thin film than that in the bulk. We also investigated the role of SOC and found only a moderate modulation of the band structure. Hence SOC is not expected to significantly affect the electronic correlation in ${\mathrm{SrRhO}}_{3}$. Extrinsic effects of finite-thickness effects beyond our calculations and localization effects may play important roles to induce the negligible spectral weight at ${E}_{F}$.

Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of delafossites may enable not only the tuning of the basic physical properties beyond what bulk materials can exhibit, but also the development of novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinity, the direct growth of epitaxial PdCrO2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities with the substrate and volatile nature of the PdO sublayer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO2 buffer layers before PdCrO2 films were grown. Unlike PdCrO2, CuCrO2 films were readily grown with a relatively wide growth window. Only a monolayer thick buffer layer was sufficient to grow the correct PdCrO2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness. This work provides key insights into advancing the epitaxial growth of the broader class of metallic delafossites for both studying the basic physical properties and developing new spintronic and computing devices.

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron doping using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole than electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction band edge is indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard $U$-interaction even though the global bandgap is predominantly a charge-transfer type gap., Comment: Revised version

Spin-phonon coupling (SPC) plays a critical role in numerous intriguing phenomena of transition metal oxides (TMOs). In 3d and 4d TMOs, the coupling between spin and lattice degrees of freedom is known to originate from the exchange interaction. On the other hand, the origin of SPC in 5d TMOs remains to be elucidated. To address this issue, we measured the phonon spectra of the 5d pyrochlore iridate Y2Ir2O7 using optical spectroscopy. Three infrared-active phonons soften below the Néel temperature of TN ≈ 170 K, indicating the existence of strong SPC. Simulations using density functional theory showed that the coupling is closely related to the Ir–O–Ir bond angle. A tight-binding model analysis reveals that this SPC is mainly mediated by the Dzyaloshinskii–Moriya interaction rather than the usual exchange interaction. We suggest that such unconventional SPC may be realized in other 5d TMOs with non-collinear magnetic order.

The impact of single-axis lattice expansion on the optical response of $\mathrm{BiFe}{\mathrm{O}}_{3}$ films is examined. Low-energy He implantation is used to tailor morphotropic phases of $\mathrm{BiFe}{\mathrm{O}}_{3}$ films and study changes in their optical spectra with continuously increasing lattice expansion. He ion implantation of epitaxial rhombohedral (R)- and tetragonal (T)-like $\mathrm{BiFe}{\mathrm{O}}_{3}$ films induces uniaxial out-of-plane strain that, on R-like films, eventually leads to a complete R-T phase transition. This approach allows us to provide insights into the optical response of $\mathrm{BiFe}{\mathrm{O}}_{3}$ films. Strain doping of T-like films leads to a significant redshift of the optical absorption spectra that is theoretically explained by a lowering of Fe $3d\phantom{\rule{0.28em}{0ex}}{t}_{2g}$ states. R-like films, on the other hand, show a less-pronounced sensitivity to uniaxial strain and a blueshift of about 250 meV at the strain-induced R-T transition. The results demonstrate that strain doping allows a deeper examination of the optical properties of epitaxial phases that are otherwise impossible to access by standard epitaxy.

Deliberate control of interface symmetry boosts chiral magnetism in spin-orbit–coupled oxide heterostructures., Chiral interactions in magnetic systems can give rise to rich physics manifested, for example, as nontrivial spin textures. The foremost interaction responsible for chiral magnetism is the Dzyaloshinskii-Moriya interaction (DMI), resulting from inversion symmetry breaking in the presence of strong spin-orbit coupling. However, the atomistic origin of DMIs and their relationship to emergent electrodynamic phenomena, such as topological Hall effect (THE), remain unclear. Here, we investigate the role of interfacial DMIs in 3d–5d transition metal-oxide-based LaMnO3/SrIrO3 superlattices on THE from a chiral spin texture. By additively engineering the interfacial inversion symmetry with atomic-scale precision, we directly link the competition between interfacial collinear ferromagnetic interactions and DMIs to an enhanced THE. The ability to control the DMI and resulting THE points to a pathway for harnessing interfacial structures to maximize the density of chiral spin textures useful for developing high-density information storage and quantum magnets for quantum information science.

The bronze-phase TiO2(B) has an open atomic framework that makes it a good candidate for applications in photochemical and electrochemical conversion of energy. However, the synthesis of bronze-phase TiO2(B) thin films on perovskite substrates, such as SrTiO3 (STO), which is one of the most conventional versatile substrates for oxide epitaxy, has been extremely challenging owing to the preferential formation of the anatase TiO2 over TiO2(B). The main reason is that the anatase TiO2 has not only a smaller lattice mismatch than TiO2(B), but also a better structural symmetry match when grown on STO. Here, we demonstrate a way to circumventing this problem by using a VO2(B) buffer layer, yielding the growth of a high-quality single crystalline TiO2(B) film on a (001)-oriented STO substrate. From the resulting TiO2(B) film, we found that this film has a large optical bandgap of ∼3.6 eV, which is close to the known theoretical value, the largest among TiO2 polymorphs, and useful for developing high-power energy devices.

Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, FMIs are innately rare to find in nature as ferromagnetism generally accompanies metallicity. Here, novel room-temperature FMI films that are epitaxially synthesized by deliberate control of the ratio between two B-site cations in the double perovskite Sr

Strongly correlated vanadium dioxide (VO2) is one of the most promising materials that exhibits a temperature-driven, metal–insulator transition (MIT) near room temperature. The ability to manipulate the MIT at nanoscale offers both insight into understanding the energetics of phase transition and a promising potential for nanoelectronic devices. In this work, we study nanoscale electrochemical modifications of the MIT in epitaxial VO2 thin films using a combined approach with scanning probe microscopy (SPM) and theoretical calculations. We find that applying electric voltages of different polarity through an SPM tip locally changes the contact potential difference and conductivity on the surface of VO2 by modulating the oxygen stoichiometry. We observed nearly 2 orders of magnitude change in resistance between positive and negative biased-tip written areas of the film, demonstrating the electric field modulated MIT behavior at the nanoscale. Density functional theory calculations, benchmarked against mor...

Tin titanate ($\mathrm{SnTi}{\mathrm{O}}_{3}$) has been notoriously impossible to prepare as a thin-film ferroelectric, probably because high-temperature annealing converts much of the $\mathrm{S}{\mathrm{n}}^{2+}$ to $\mathrm{S}{\mathrm{n}}^{4+}$. In the present paper, we show two things: first, perovskite phase $\mathrm{SnTi}{\mathrm{O}}_{3}$ can be prepared by atomic-layer deposition directly onto $p$-type Si substrates; and second, these films exhibit ferroelectric switching at room temperature, with $p$-type Si acting as electrodes. X-ray diffraction measurements reveal that the film is single-phase, preferred-orientation ferroelectric perovskite $\mathrm{SnTi}{\mathrm{O}}_{3}$. Our films showed well-saturated, square, and repeatable hysteresis loops of around $3\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{C}/\mathrm{c}{\mathrm{m}}^{2}$ remnant polarization at room temperature, as detected by out-of-plane polarization versus electric field and field cycling measurements. Furthermore, photovoltaic and photoferroelectricity were found in $\mathrm{Pt}/\mathrm{SnTi}{\mathrm{O}}_{3}/\mathrm{Si}/\mathrm{SnTi}{\mathrm{O}}_{3}/\mathrm{Pt}$ heterostructures, the properties of which can be tuned through band-gap engineering by strain according to first-principles calculations. This is a lead-free room-temperature ferroelectric oxide of potential device application.

The slow kinetics of the oxygen reduction reaction (ORR) is one of the key challenges in developing high performance energy devices, such as solid oxide fuel cells. Straining a film by growing on a lattice-mismatched substrate has been a conventional approach to enhance the ORR activity. However, due to the limited choice of electrolyte substrates to alter the degree of strain, a systematic study in various materials has been a challenge. Here, we explore the strain modulation of the ORR kinetics by growing epitaxial La0.6Sr0.4CoO3-{\delta} (LSCO) films on yttria-stabilized zirconia substrates with the film thickness below and above the critical thickness for strain relaxation. Two orders of magnitude higher ORR kinetics is achieved in an ultra-thin film with ~0.8% tensile strain as compared to unstrained films. Time-of-flight secondary ion mass spectrometry depth profiling confirms that the Sr surface segregation is not responsible for the enhanced ORR in strained films. We attribute this enhancement of ORR kinetics to the increase in oxygen vacancy concentration in the tensile-strained LSCO film owing to the reduced activation barrier for oxygen surface exchange kinetics. Density functional theory calculations reveal an upshift of the oxygen 2p-band center relative to the Fermi level by tensile strain, indicating the origin of the enhanced ORR kinetics.

We utilize near-infrared femtosecond pulses to investigate coherent phonon oscillations of Ca2RuO4. The coherent Ag phonon mode of the lowest frequency changes abruptly not only its amplitude but also the oscillation-phase as the spin order develops. In addition, the phonon mode shows a redshift entering the magnetically ordered state, which indicates a spin-phonon coupling in the system. Density functional theory calculations reveal that the Ag oscillations result in octahedral tilting distortions, which are exactly in sync with the lattice deformation driven by the magnetic ordering. We suggest that the structural distortions by the spin-phonon coupling can induce the unusual oscillation-phase shift between impulsive and displacive type oscillations., 6 pages, 4 figures, 1 table

5d pyrochlore oxides with all-in-all-out magnetic order are prime candidates for realizing strongly correlated, topological phases of matter. Despite significant effort, a full understanding of all-in-all-out magnetism remains elusive as the associated magnetic excitations have proven difficult to access with conventional techniques. Here we report a Raman spectroscopy study of spin dynamics in the all-in-all-out magnetic state of the 5d pyrochlore Cd2Os2O7. Through a comparison between the two-magnon scattering and spin-wave theory, we confirm the large single ion anisotropy in this material and show that the Dzyaloshinskii–Moriya and exchange interactions play a significant role in the spin-wave dispersions. The Raman data also reveal complex spin–charge–lattice coupling and indicate that the metal–insulator transition in Cd2Os2O7 is Lifshitz-type. Our work establishes Raman scattering as a simple and powerful method for exploring the spin dynamics in 5d pyrochlore magnets., Pyrochlore 5d transition metal oxides are expected to have interesting forms of magnetic order but are hard to study with conventional probes. Here the authors show that Raman scattering can be used to measure magnetic excitations in Cd2Os2O7 and that it exhibits complex spin-charge-lattice coupling.

Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here, it is found that the concentration of oxygen vacancies (VO ) formed in LaNiO3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the VO concentration in LNO significantly modifies the degree of orbital polarization and drives the metal-insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called "oxygen diode", by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.

Oxygen defect control has long been considered an important route to functionalizing complex oxide films. However, the nature of oxygen defects in thin films is often not investigated beyond basic redox chemistry. One of the model examples for oxygen-defect studies is the layered Ruddlesden–Popper phase La2−xSrxCuO4−δ (LSCO), in which the superconducting transition temperature is highly sensitive to epitaxial strain. However, previous observations of strain-superconductivity coupling in LSCO thin films were mainly understood in terms of elastic contributions to mechanical buckling, with minimal consideration of kinetic or thermodynamic factors. Here, we report that the oxygen nonstoichiometry commonly reported for strained cuprates is mediated by the strain-modified surface exchange kinetics, rather than reduced thermodynamic oxygen formation energies. Remarkably, tensile-strained LSCO shows nearly an order of magnitude faster oxygen exchange rate than a compressively strained film, providing a strategy for developing high-performance energy materials., The desirable functional properties of complex oxide materials are often influenced by the presence of oxygen defects and epitaxial strain. Meyer et al. demonstrate the role of oxygen defect kinetics in the strain control of the superconducting transition temperature of LSCO.

We report an investigation of the electronic structure of crystalline InGaZnO (IGZO) using X-ray absorption spectroscopy (XAS) and ab initio density functional theory calculations. The electronic properties of the conduction band vary significantly with the composition of InGaZnO4 and In2Ga2ZnO7, and this is strongly correlated with the XAS spectra. Detailed analyses of the orbital character reveal crystal field splitting under characteristic local structural distortions of the ZnO5 coordinate bonds, which breaks the In p/d orbital degeneracy and preferentially lowers the energies of the In pz and d(3z2 − r2, xz/yz) orbitals near the Zn ions. The In s–p/d orbitals hybridize and contribute to the low-energy features of the In 5s orbitals. Therefore, the strong dependence of the electronic structure on the composition can be understood in terms of the abundance of distorted ZnO5 coordination near the In3+ ions. In the case of amorphous IGZO, however, the XAS study and the ab initio calculations consistently show that the dependence of the electronic structure on the composition is significantly weaker than it is for crystalline IGZO, which is due to the lack of distinct symmetry in the s–p/d mixed orbitals. This work demonstrates that orbital hybridization is significant in determining the detailed low-energy electronic structure of crystalline IGZO.

(111)-oriented transition metal oxide thin films provide a route to developing oxide-based topological quantum materials, but the epitaxial growth is challenging. Here, we present the thickness-dependent electronic and magnetic phase diagrams of coherently strained, phase pure (111)-oriented SrRuO3 epitaxial films grown on (111) SrTiO3 substrates using pulsed laser deposition. With decreasing film thickness, it is found that both the metal-to-insulator and magnetic phase transitions occur at the same thickness of 4–5 nm for films grown along both the (111) and the (001) directions. The character of the transport near the metal-insulator transition is, however, distinct for the different directions, which is attributed to the increased electron-electron correlation for (111) SrRuO3. The findings presented here highlight both the broad challenges as well as the possibilities in modifying correlated materials using dimensional tuning of electronic and magnetic properties.

Charge transfer in superlattices consisting of SrIrO$_3$ and SrMnO$_3$ is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO$_3$ and SrMnO$_3$, rather large charge transfer was experimentally reported at the interface between them. Here, we report a microscopic model that captures the mechanism behind this phenomenon, providing a qualitative understanding of the experimental observation. This leads to unique strain dependence of such charge transfer in iridate-manganite superlattices. The predicted behavior is consistently verified by experiment with soft x-ray and optical spectroscopy. Our work thus demonstrates a new route to control electronic states in non-polar oxide heterostructures., Comment: 6 pages, 5 figures

The strong interplay of fundamental order parameters in complex oxides is known to give rise to exotic physical phenomena. The $4d$ transition-metal oxide $\mathrm{SrRh}{\mathrm{O}}_{3}$ has generated much interest, but advances have been hindered by difficulties in preparing single-crystalline phases. Here we epitaxially stabilize high-quality single-crystalline $\mathrm{SrRh}{\mathrm{O}}_{3}$ films and investigate their structural, electronic, and magnetic properties. We determine that their properties significantly differ from the paramagnetic metallic ground state that governs bulk samples and are strongly related to rotations of $\mathrm{Rh}{\mathrm{O}}_{6}$ octahedra.