429 results on '"Chao, Tien-Sheng"'
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2. Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition
3. Investigation on Germanium Transistors with HfOx-Based Gate Stacks for CMOS Operations
4. Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel
5. First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics
6. Single‐Gate In‐Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching
7. Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]
8. Novel FD SOI Devices Structure for Low Standby Power Applications
9. Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics
10. Optimization of Ferroelectricity in Al-Doped HfO2 Capacitors: Electrical and Endurance Characteristics
11. Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)
12. Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1-xO2 FETs With NH3 Plasma Treatment Featuring High Footprint Current
13. Corrections to “Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal”
14. Ti supersaturated Si by microwave annealing processes
15. Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition
16. Ti supersaturated Si by microwave annealing processes
17. Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics
18. Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques
19. Fabrication of Bilayer Stacked Antiferroelectric/Ferroelectric HfxZr1-xO2 FeRAM and FeFET with Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures
20. Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric Hf$_{\textit{x}}$Zr$_{\text{1}-\textit{x}}$O$_{\text{2}}$ FETs With NH$_{\text{3}}$ Plasma Treatment
21. High thermal stability Ohmic contact for GaN-based devices
22. Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)
23. A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology
24. Polycrystalline silicon thin-film transistor with nickel–titanium oxide by sol–gel spin-coating and nitrogen implantation
25. Role of Nitrogen in Ferroelectricity of Hf x Zr1-x O2-Based Capacitors With Metal-Ferroelectric-Insulator-Metal Structure
26. First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
27. Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrOx Ge FinFET Inverters
28. Investigation of NH3 Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs
29. Investigation of Ge channel Complemental Field Effect Transistors (CFETs) Stacked Epitaxy or Layer Transfer
30. Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2 Negative Capacitance FETs With Internal Metal Gate and NH3 Plasma Nitridation
31. High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr1-x O2
32. Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application
33. Investigation of Two Bits With Multistate Antifuse on nMOS Poly-Silicon Junctionless GAA OTP
34. Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments
35. Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
36. Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer
37. Improvement on performance and reliability of TaN/HfO 2 LTPS-TFTs with fluorine implantation
38. Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures
39. Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3 Plasma Treatment
40. Reliability of p-Type Pi-Gate Poly-Si Nanowire Channel Junctionless Accumulation-Mode FETs
41. CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications
42. Ultrathin Sub-5-nm Hf₁₋ₓZrₓO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate
43. Novel one-step aqueous solutions to replace pregate oxide cleans
44. A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects
45. Effect of CF4 plasma pretreatment on low temperature oxides
46. Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film
47. Improved low temperature characteristics of P-channel MOFSETs with Si[subscript 1-x]Ge[subscript x] raised source and drain
48. High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices
49. Characterization of ultrathin oxynitride (18-21 A) gate dielectrics by NH3 nitridation and N20 RTA treatment
50. Comparison of ultrathin CoTi03 and NiTi03 high-k gate dielectrics
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