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To achieve densely packed charge-selective organosilane- based interfacial layers (IFLs) on the tin-doped indium oxide (ITO) anodes of organic photovoltaic (OPV) cells, a series of Ar2N-(CH2)n-SiCl3 precursors with Ar = 3,4-difluorophenyl, n = 3, 6, 10, and 18, was synthesized, characterized, and chemisorbed on OPV anodes to serve as IFLs. To minimize lateral nonbonded -NAr2···Ar2N- repulsions which likely limit IFL packing densities in the resulting self-assembled monolayers (SAMs), precursor mixtures having both small and large n values are simultaneously deposited. These "heterogeneous" SAMs are characterized by a battery of techniques: contact angle measurements, X-ray reflectivity, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy (UPS), cyclic voltammetry, and DFT computation. It is found that the headgroup densities of these "supersaturated" heterogeneous SAMs (SHSAMs) are enhanced by as much as 17% versus their homogeneous counterparts. Supersaturation significantly modifies the IFL properties including the work function (as much as 16%) and areal dipole moment (as much as 49%). Bulk-heterojunction OPV devices are fabricated with these SHSAMs: ITO/IFL/poly((4,8- bis((2-ethylhexyl)oxy)benzo(1,2-b:4,5-b')dithiophene-2,6-diyl)(2-(((2-ethylhexyl)oxy)carbonyl)-3-fluorothieno(3,4-b)thiophe- nediyl)):phenyl-C71-butyric acid methyl ester (PTB7:PC71BM)/LiF/Al. OPVs having SHSAM IFLs exhibit significantly enhanced performance (PCE by 54%; Voc by 35%) due to enhanced charge selectivity and collection, with the PCE rivaling or exceeding that of PEDOT:PSS IFL devices −7.62%. The mechanism underlying the enhanced performance involves modified hole collection and selectivity efficiency inferred from the UPS data. The ITO/SAM/SHSAM surface potential imposed by the dipolar SAMs causes band bending and favorably alters the Schottky barrier height. Thus, interfacial charge selectivity and collection are enhanced as evident in the greater OPV Voc.

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

The ionization potentials (IPs) and electron affinities (EAs) of widely used conjugated polymers are evaluated by cyclic voltammetry (CV) in conventional electrochemical and lithium-ion battery media, and also by ultraviolet photoelectron spectroscopy (UPS) in vacuo. By comparing the data obtained in the different systems, it is found that the IPs of the conjugated polymer films determined by conventional CV (IPC) can be correlated with UPS-measured HOMO energy levels (EH,UPS) by the relationship EH,UPS = (1.14 ± 0.23) × qIPC + (4.62 ± 0.10) eV, where q is the electron charge. It is also found that the EAs of the conjugated polymer films measured via CV in conventional (EAC) and Li(+) battery (EAB) media can be linearly correlated by the relationship EAB = (1.07 ± 0.13) × EAC + (2.84 ± 0.22) V. The slopes and intercepts of these equations can be correlated with the dielectric constants of the polymer film environments and the redox potentials of the reference electrodes, as modified by the surrounding electrolyte, respectively.

A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu(2+) to Cu(1+), Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

With the goal of investigating and enhancing anode performance in bulk-heterojunction (BHJ) organic photovoltaic (OPV) cells, the glass/tin-doped indium oxide (ITO) anodes are modified with a series of robust silane-tethered bis(fluoroaryl)amines to form self-assembled interfacial layers (IFLs). The modified ITO anodes are characterized by contact angle measurements, X-ray reflectivity, ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, atomic force microscopy, and cyclic voltammetry. These techniques reveal the presence of hydrophobic amorphous monolayers of 6.68 to 9.76 Å thickness, and modified anode work functions ranging from 4.66 to 5.27 eV. Two series of glass/ITO/IFL/active layer/LiF/Al BHJ OPVs are fabricated with the active layer = poly(3-hexylthiophene):phenyl-C71-butyric acid methyl ester (P3HT:PC71BM) or poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)-carbonyl]thi-eno[3,4-b]thiophenediyl]]:phenyl-C71-butyric acid methyl ester (PTB7:PC71BM). OPV analysis under AM 1.5G conditions reveals significant performance enhancement versus unmodified glass/ITO anodes. Strong positive correlations between the electrochemically derived heterogeneous electron transport rate constants (ks) and the device open circuit voltage (Voc), short circuit current (Jsc), hence OPV power conversion efficiency (PCE), are observed for these modified anodes. Furthermore, the strong functional dependence of the device response on ks increases as greater densities of charge carriers are generated in the BHJ OPV active layer, and is attributable to enhanced anode carrier extraction in the case of high-ks IFLs.

Substitution of a pyridyl for the hydroxyphenyl moiety in the Green Fluorescent Protein analog p-hydroxybenzylidene-dimethylimidiazolinone produces a chromophore which "turns on" fluorescence in the presence of Zn(2+) or Cd(2+) ions. Such a phenomenon provides "proof of principle" for using GFP chromophores in a variety of sensing applications.