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Quantum Anomalous Hall (QAH) state in six quintuple layer Cr$_{0.1}$(Bi$_{0.2}$Sb$_{0.8}$)$_{1.9}$Te$_3$ thin films were studied through scanning tunneling spectroscopy (STS) and electrical transport measurements. While the surface state is gapless above the Curie temperature ($T_\mathrm{C} \approx 30$ K), scanning tunneling spectroscopy (STS) of the sample reveals a topologically non-trivial gap with an average value of $\approx 13.5$ meV at 4.2 K below the ferromagnetic transition. Nonetheless, areal STS scans of the magnetic topological insulator exhibit energy modulations on the order of several meV's in the surface bands which result in the valence band maximum in some regions becoming higher than the energy of the conduction band minimum of some other regions that are spatially separated by no more than 3 nm. First principle calculations demonstrate that the origin of the observed inhomogeneous energy band alignment is an outcome of many-body interactions, namely electron-defect interactions and electron-phonon interactions. Defects play the role of locally modifying the energy landscape of surface bands while electron-phonon interactions renormalize the surface bands such that the surface gap becomes reduced by more than 1 meV as temperature is raised from 0 to 4.2 K. These many-body interactions at a finite temperature result in substantial increase of electron tunneling across the spatially separated conduction band pockets even for finite temperatures well below $T_\mathrm{C}$ , thus driving the magnetic topological insulator out of its QAH insulating phase into a metallic phase at a relatively low temperature., Comment: 15 pages, 15 figures

We apply a full-polaron master equation and a weak-coupling non-Markovian master equation to describe the steady-state time-averaged properties of a driven two-level system, an electron coherently tunneling between double quantum dots (DQDs), interacting with a bosonic phonon bath. Comparing the results obtained using these two master equations with those from a recent DQD experiment and its corresponding weak-coupling theoretical method, we find that the original parameter set used in the experiment and theoretical method is not in the weak-coupling parameter regime. By using the full-polaron master equation with a slight adjustment on only the value of the interdot separation in the original experimental parameter set, we find that a reasonable fit to the experimentally measured time-averaged steady-state population data can be achieved. The adjusted interdot separation is within the possible values allowed by the geometry of the surface gates that define the DQD in the experiment. Our full-polaron equation approach does not require the special renormalization scheme employed in their weak-coupling theoretical method, and can still describe the experimental results of driving-induced phonon-enhanced steplike shoulder behaviors in the experiment. This demonstrates that the full-polaron master equation approach is a correct and efficient tool to describe the steady-state properties of a driven spin-boson model in the case of strong system-environment coupling., Comment: 2 columns, 10 pages, 2 figures Accepted for publication in Phys. Rev. B

Plasma enhanced chemical vapor deposition (PECVD) techniques have been shown to be an efficient method to achieve single-step synthesis of high-quality monolayer graphene (MLG) without the need of active heating. Here we report PECVD-growth of single-crystalline hexagonal bilayer graphene (BLG) flakes and mm-size BLG films with the interlayer twist angle controlled by the growth parameters. The twist angle has been determined by three experimental approaches, including direct measurement of the relative orientation of crystalline edges between two stacked monolayers by scanning electron microscopy, analysis of the twist angle-dependent Raman spectral characteristics, and measurement of the Moir\'e period with scanning tunneling microscopy. In mm-sized twisted BLG (tBLG) films, the average twist angle can be controlled from 0 to approximately 20 \degree, and the angular spread for a given growth condition can be limited to < 7 \degree. Different work functions between MLG and BLG have been verified by the Kelvin probe force microscopy and ultraviolet photoelectron spectroscopy. Electrical measurements of back-gated field-effect-transistor devices based on small-angle tBLG samples revealed high-quality electric characteristics at 300 K and insulating temperature dependence down to 100 K. This controlled PECVD-growth of tBLG thus provides an efficient approach to investigate the effect of varying Moir\'e potentials on tBLG., Comment: Manuscript (39 pages, 10 figures) and Supplementary Information (11 pages, 6 figures). Published in Carbon

A two-qubit controlled-NOT (CNOT) gate, realized by a controlled-phase (C-phase) gate combined with single-qubit gates, has been experimentally implemented recently for quantum-dot spin qubits in isotopically enriched silicon, a promising solid-state system for practical quantum computation. In the experiments, the single-qubit gates have been demonstrated with fault-tolerant control-fidelity, but the infidelity of the two-qubit C-phase gate is, primarily due to the electrical noise, still higher than the required error threshold for fault-tolerant quantum computation (FTQC). Here, by taking the realistic system parameters and the experimental constraints on the control pulses into account, we construct experimentally realizable high-fidelity CNOT gates robust against electrical noise with the experimentally measured $1/f^{1.01}$ noise spectrum and also against the uncertainty in the interdot tunnel coupling amplitude. Our optimal CNOT gate has about two orders of magnitude improvement in gate infidelity over the ideal C-phase gate constructed without considering any noise effect. Furthermore, within the same control framework, high-fidelity and robust single-qubit gates can also be constructed, paving the way for large-scale FTQC., Comment: 6 pages, 2 figures

We investigate the preparation of a target initial state for a two-level (qubit) system from a system-environment equilibrium or correlated state by an external field. The system-environment equilibrium or correlated state results from the inevitable interaction of the system with its environment. An efficient method in an extended auxiliary Liouville space is introduced to describe the dynamics of the non-Markovian open quantum system in the presence of a strong field and an initial system-environment correlation. By using the time evolutions of the population difference, the state trajectory in the Bloch sphere representation and the trace distance between two reduced system states of the open quantum system, the effect of initial system-environment correlations on the preparation of a system state is studied. We introduce an upper bound and a lower bound for the trace distance within our perturbation formalism to describe the diverse behaviors of the dynamics of the trace distance between various correlated states after the system state preparation. These bounds that are much more computable than similar bounds in the literature give a sufficient condition and a necessary condition for the increase of the trace distance and are related to the witnesses of non-Markovianity and initial system-bath correlation., Comment: 15 pages, 8 figures; accepted for publication in Phys. Rev. A