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Janus transition metal dichalcogenides (TMDs) are a novel class of 2D materials with unique mirror asymmetry. Plasma‐assisted synthesis at room temperature is favored for producing Janus TMDs due to its energy efficiency and prevention of alloying. However, current methods require stringent control over growth conditions, risking defects or unintended materials. A robust plasma‐assisted (RPA) synthesis strategy is introduced, incorporating a built‐in tube with a suitable inner diameter into the plasma‐assisted system. This innovation creates a mild, uniform plasma atmosphere, allowing for broader variations in growth parameters without significantly affecting Janus MoSSe's morphology and characteristics. This approach simplifies the synthesis process and enhances the success rate of Janus TMD production. Additionally, methods are explored to enhance the photoluminescence (PL) of Janus MoSSe. Releasing MoSSe from the growth substrate and annealing it removes strain and unintentional doping, improving PL performance. MoSSe on hexagonal boron nitride (h‐BN) flakes after annealing shows a 32‐fold increase in PL intensity. Bis(trifluoromethane) sulfonimide (TFSI) treatment of MoSSe results in a remarkable 70‐fold increase in PL intensity, a 2.5‐fold extension in exciton lifetime, and quantum yield (QY) reaching up to ≈31.2%. These findings provide critical insights for optimizing the luminescence properties of 2D Janus materials, advancing Janus optoelectronics. [ABSTRACT FROM AUTHOR]

The development of inkjet-printed 2D crystal inks offers the ability to print different 2D materials on various substrates to form vertical heterostructures. However, the detailed characterization of the atomic structures of the inkjet-printed MoTe2 nanosheets has been rarely reported. In this work, water-based 2D crystal inks of MoTe2, WS2, and graphene have been prepared and printed to obtain the flexible photodetectors. The absorption coefficient of MoTe2 has been estimated as α (500 nm) = 925 ± 47 lg−1 m−1 using the gravimetric method. Intriguingly, the inkjet-printed MoTe2 nanosheets down to 4 nm show both the semiconducting 2H and metallic 1T′ phases. The responsivities of the photodetectors based on MoTe2/graphene and WS2/graphene heterostructures can reach 120 mA/W and 2.5 A/W at 532 nm, respectively. Moreover, the inkjet-printed MoTe2/graphene shows a responsivity of 7.7 mA/W at 940 nm. The fabrication technique of inkjet printing will help design flexible optoelectronic devices based transition metal dichalcogenide–graphene heterostructures for the near-infrared photo detection. [ABSTRACT FROM AUTHOR]

Supercapacitors have been extensively studied due to their advantages of fast-charging and discharging, high-power density, long-cycling life, low cost, etc. Exploring novel nanomaterial schemes for high-performance electrode materials is of great significance. Herein, a strategy to combine vertical graphene (VG) with MoO3 nanosheets to form a composite VG/MoO3 nanostructure is proposed. VGs as transition layers supply rich active sites for the growth of MoO3 nanosheets with increasing specific surface areas. The VG transition layer further improves the electric contact and adhesion of the MoO3 electrode, simultaneously stabilizing its volume and crystal structure during repeated redox reactions. Thus, the prepared VG/MoO3 nanosheets have been demonstrated to exhibit excellent electrochemical properties, such as high reversible capacitance, better cycling performance, and high-rate capability. [ABSTRACT FROM AUTHOR]

In this paper, a low-cost Ti/TiO2/HfO2/TiO2/Ti stack structure is proposed as a selector for bipolar resistive random access memory (RRAM) cross-bar array applications. We demonstrate reproducible resistive switching characteristics with significant nonlinearity and good uniformity in the one selector and one resistor (1S1R) structure device that integrate the bidirectional selector with a bipolar Pt/Ti/HfO2/Pt RRAM device. These results provide a good point of reference for evaluating the potential low-cost applications in bipolar RRAM cross-bar array. [ABSTRACT FROM AUTHOR]