102 results on '"Chen, Frederick T."'
Search Results
2. Size dependence of TiN/HfO 2/Ti MIM ReRAM resistance states: Model and experimental results
3. Antimony alloys for phase-change memory with high thermal stability
4. Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
5. Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
6. Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
7. Resistance switching for RRAM applications
8. Data retention statistics and modelling in HfO2 resistive switching memories
9. Effect of Ti buffer layer on HfOx-based bipolar and complementary resistive switching for future memory applications
10. Data retention statistics and modelling in HfO2 resistive switching memories
11. RRAM Defect Modeling and Failure Analysis Based on March Test and a Novel Squeeze-Search Scheme
12. Set-Triggered-Parallel-Reset Memristor Logic for High-Density Heterogeneous-Integration Friendly Normally Off Applications
13. A nonvolatile look-up table using ReRAM for reconfigurable logic
14. Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme
15. Sidewall profile engineering for the reduction of cut exposures in self-aligned pitch division patterning
16. Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture
17. A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application
18. 28-nm 2T High-$K$ Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes
19. Sidewall profile inclination modulation mask (SPIMM): modification of an attenuated phase-shift mask for single-exposure double and multiple patterning
20. Sub-30nm TiN/Ti/HfOx pillar formed by tone reverse processes for RRAM applications
21. Sub-14 nm HSQ line patterning by e-beam dose proximity effect correction assisted with designed line CD/pitch split
22. A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes
23. Circuit design challenges and trends in read sensing schemes for resistive-type emerging nonvolatile memory
24. Metal–Oxide RRAM
25. Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte
26. Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
27. Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
28. Substrate and underlayer dependence of sub-32nm e-beam HSQ pillar patterning process for RRAM application
29. Transfer optimized dry development process of sub-32nm HSQ/AR3 BLR resist pillar from low-K etcher to metal etcher
30. Access Strategies for Resistive Random Access Memory (RRAM)
31. Complementary polarity exposures for cost-effective line-cutting in multiple patterning lithography
32. Three-Dimensional $\hbox{4F}^{2}$ ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process
33. Experimental investigation of the reliability issue of RRAM based on high resistance state conduction
34. Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM
35. A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability
36. A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications
37. Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: Model and experimental results
38. EUVL mask patterning with blanks from commercial suppliers
39. Asymmetry and thickness effects in reflective EUV masks
40. Polarizing Assist Features for High-NA Optical Lithography
41. EUVL mask patterning with blanks from commercial suppliers.
42. Asymmetry and thickness effects in reflective EUV masks.
43. Polarizing Assist Features for High-NA Optical Lithography.
44. Impact of the loading effect on CD control in plasma etching of Cr photomasks using ZEP 7000 resist
45. Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-μm-generation advanced mask fabrication
46. Diffractive lens fabricated with mostly zeroth-order gratings
47. Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-m-generation advanced mask fabrication.
48. Three-Dimensional \4F^2 ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process.
49. A personal computer based expert system framework for the design of experiments
50. Sub-30nm TiN/Ti/HfOx pillar formed by tone reverse processes for RRAM applications
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.