140 results on '"Chen, Jone F."'
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2. The direct evidence of substrate potential propagation in a gate-grounded NMOS
3. Investigating the Photodetectors and pH Sensors of Two-Dimensional MoS2 with Different Substrates
4. Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers
5. Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors
6. Device enhancement using process-strained-Si for sub-100-nm nMOSFET
7. The effect of geometry on the noise characterization of SiGe HBTs and optimized device sizes for the design of low-noise amplifiers
8. Channel width dependence of hot-carrier induced degradation in shallow trench isolated PMOSFET's
9. Modeling and characterization of electromigration failures under bidirectional current stress
10. Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology
11. Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region
12. Characteristics and reliability of metal–oxide–semiconductor transistors with various depths of plasma-induced Si recess structure
13. Simulation-Based Study of Hybrid Fin/Planar LDMOS Design for FinFET-Based System-on-Chip Technology
14. High-density SRAM voltage scaling enabled by inserted-oxide FinFET technology
15. Analysis of high-voltage metal–oxide–semiconductor transistors with gradual junction in the drift region
16. Drift region doping effects on characteristics and reliability of high-voltage n-type metal–oxide–semiconductor transistors
17. An improvement on shallow trench isolation process
18. Impact of Uniaxial Strain on Random Telegraph Noise in High- $k$ /Metal Gate pMOSFETs
19. Two‐stage hot‐carrier‐induced degradation of p‐type LDMOS transistors
20. Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths
21. Low-Frequency Noise Characteristics for Various ${\rm ZrO}_{2}$-Added ${\rm HfO}_{2}$-Based 28-nm High-$k$/Metal-Gate nMOSFETs
22. Extraction and Analysis of Interface States in 50-nm nand Flash Devices
23. Characteristics of Lateral Diffused Metal–Oxide–Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide
24. Grain-Orientation Induced Quantum Confinement Variation in FinFETs and Multi-Gate Ultra-Thin Body CMOS Devices and Implications for Digital Design
25. The Direct Evidence of Substrate Potential Propagation in a Gate-Grounded NMOS
26. Ultrathin DPN STI SiON liner for 40nm low-power CMOS technology
27. Improvement of Poly-Pimple-Induced Device Mismatch on 6T-SRAM at 65-nm CMOS Technology
28. Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology
29. Improved Poly Gate Engineering for 65 nm Low Power CMOS Technology
30. Mechanisms of Hot-Carrier-Induced Threshold-Voltage Shift in High-Voltage p-Type LDMOS Transistors
31. Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors
32. Mechanism and Modeling of On-Resistance Degradation in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
33. Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors
34. Effect of NDD dosage on hot-carrier reliability in DMOS transistors
35. Channel length dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor transistors
36. Impact of hot-hole injection on the characteristics of High-Voltage MOS transistors
37. On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region
38. Dynamic Turn-On Mechanism of the n-MOSFET Under High-Current Stress
39. Effect of Drift-Region Concentration on Hot-Carrier-Induced $R_{\rm on}$ Degradation in nLDMOS Transistors
40. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors
41. Anomalous Hot-Carrier-Induced Increase in Saturation-Region Drain Current in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
42. An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors
43. Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
44. Anomalous increase in hot-carrier-induced threshold voltage shift in n-type drain extended metal-oxide-semiconductor transistors
45. Effect of hot-carrier-induced interface states distribution on linear drain current degradation in 0.35μm n-type lateral diffused metal-oxide-semiconductor transistors
46. off-State Avalanche-Breakdown-Induced on-Resistance Degradation in Lateral DMOS Transistors
47. Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers
48. Effects of Drift-Region Design on the Reliability of Integrated High-Voltage LDMOS Transistors
49. Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors
50. Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
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